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11. 发明授权

US06800546B2 Film forming method by radiating a plasma on a surface of a low dielectric constant film 失效
标题翻译：通过在低介电常数膜的表面上照射等离子体的成膜方法
公开(公告)号：US06800546B2
公开(公告)日：2004-10-05
申请号：US10095025
申请日：2002-03-12
申请人： Nobuo Konishi , Mitsuaki Iwashita , Hiroki Ohno , Shigeru Kawamura , Masahito Sugiura
发明人： Nobuo Konishi , Mitsuaki Iwashita , Hiroki Ohno , Shigeru Kawamura , Masahito Sugiura
IPC分类号： H01L214763
CPC分类号： H01L21/76837 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.
摘要翻译：本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性具有所谓的“锚效应”。

12. 发明申请

US20140242085A1 METHODS AND COMPOSITION FOR TESTING, PREVENTING, AND TREATING ASPERGILLUS FUMIGATUS INFECTION 审中-公开
标题翻译：测试，预防和治疗青蒿素感染的方法和组合
公开(公告)号：US20140242085A1
公开(公告)日：2014-08-28
申请号：US14238143
申请日：2011-08-12
申请人： Yoshitsugu Miyazaki , Satoshi Yamagoe , Masunori Kajikawa , Masahito Sugiura , Reiko Itoh , Hirotaka Kumagai
发明人： Yoshitsugu Miyazaki , Satoshi Yamagoe , Masunori Kajikawa , Masahito Sugiura , Reiko Itoh , Hirotaka Kumagai
IPC分类号： C07K16/14 , G01N33/569
CPC分类号： C07K16/14 , A61K2039/505 , C07K14/38 , C07K2317/34 , G01N33/56961 , G01N2333/38
摘要： As a result of the analysis by an SST-REX method so as to identify a target molecule for treating and testing an Aspergillus fumigatus infection, a YMAF1 protein has been found out, which is mainly localized in the cell wall of Aspergillus fumigatus. Moreover, it has been found out that YMAF1 protein-deficient Aspergillus fumigatus has reduced spore-forming ability and pathogenicity. Further, it has been found out that the survival rate of experimental mice having aspergillosis (invasive Aspergillus model mice) is improved by preparing and administering an antibody against the YMAF1 protein. Furthermore, it has been found out that Aspergillus fumigatus can be detected with a favorable sensitivity by an ELISA system using the antibody.
摘要翻译：作为通过SST-REX法分析以鉴定用于治疗和测试烟曲霉感染的靶分子的结果，已经发现YMAF1蛋白主要位于烟曲霉的细胞壁中。此外，已经发现YMAF1蛋白缺乏的烟曲霉具有降低的孢子形成能力和致病性。此外，已经发现，通过制备和施用针对YMAF1蛋白的抗体，改善了具有曲霉菌病（侵入性曲霉属模型小鼠）的实验小鼠的存活率。此外，已经发现通过使用抗体的ELISA系统可以以良好的灵敏度检测烟曲霉。

13. 发明授权

US06232248B1 Single-substrate-heat-processing method for performing reformation and crystallization 失效
标题翻译：用于进行改性和结晶的单基板热处理方法
公开(公告)号：US06232248B1
公开(公告)日：2001-05-15
申请号：US09335526
申请日：1999-06-18
申请人： Hiroshi Shinriki , Masahito Sugiura
发明人： Hiroshi Shinriki , Masahito Sugiura
IPC分类号： H01L2131
CPC分类号： C23C16/405 , C23C16/44 , C23C16/56 , H01L21/31604 , H01L28/56
摘要： An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.
摘要翻译：在半导体晶片上形成由第一和第二钽氧化物层构成的绝缘膜。首先，通过CVD形成非晶质第一层，并且进行用于除去第一层中所含有机杂质的重整工序。然后，在第一层上通过CVD形成无定形第二层。然后，通过在一定时间内将晶片加热至低于结晶温度的温度，将含有臭氧的工艺气体供给到处理室中，来进行用于除去第二层中所含有机杂质的重整工序。此外，在相同的处理室内，将晶片依次加热至高于结晶温度的第二温度，然后将晶片冷却至低于结晶温度的温度，以使第一和第二层同时结晶。

14. 发明授权

US6143081A Film forming apparatus and method, and film modifying apparatus and method 失效
标题翻译：成膜装置及方法以及膜改型装置及方法
公开(公告)号：US6143081A
公开(公告)日：2000-11-07
申请号：US889590
申请日：1997-07-08
申请人： Hiroshi Shinriki , Masahito Sugiura
发明人： Hiroshi Shinriki , Masahito Sugiura
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/405 , C23C16/4411 , C23C16/45514 , C23C16/45563 , C23C16/45574 , C23C16/4586 , C23C16/482 , C23C16/54
摘要： A film forming/modifying system includes a film forming apparatus which has an alcohol supply unit and forms a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist, a film modifying apparatus which has a UV irradiation unit for irradiating a UV ray on ozone to generate active oxygen atoms, and modifies the metal oxide film by exposing the metal oxide film to the active oxygen atoms in a vacuum atmosphere, and a common transfer chamber commonly coupled to the film forming apparatus and the film modifying apparatus to transfer the target process object between the film forming apparatus and the film modifying apparatus while maintaining the vacuum state.
摘要翻译：成膜/修饰系统包括：成膜装置，其具有醇供应单元，并且在存在蒸发的金属氧化物膜材料和蒸发的醇的真空气氛中在半导体晶片上形成金属氧化物膜，具有用于对臭氧照射紫外线以产生活性氧原子的UV照射单元，并且通过在真空气氛中将金属氧化物膜暴露于活性氧原子来修饰金属氧化物膜，以及通常耦合到膜的公共转移室成膜装置和薄膜修改装置，以在保持真空状态的同时在成膜装置和薄膜修改装置之间转移目标处理对象。

15. 发明授权

US08858944B2 Treatment drug for autoimmune diseases and allergic diseases 有权
标题翻译：自身免疫性疾病和过敏性疾病的治疗药物
公开(公告)号：US08858944B2
公开(公告)日：2014-10-14
申请号：US13701408
申请日：2011-06-02
申请人： Koichi Kino , Toshihiro Kai , Mitsuhiro Matsumoto , Masunori Kajikawa , Masahito Sugiura , Emi Shimizu
发明人： Koichi Kino , Toshihiro Kai , Mitsuhiro Matsumoto , Masunori Kajikawa , Masahito Sugiura , Emi Shimizu
IPC分类号： A61K39/395 , G01N33/68 , G01N33/50 , C12Q1/68 , C07K16/28 , A61K39/00
CPC分类号： C07K16/42 , A61K39/39533 , A61K2039/505 , C07K16/2803 , C07K2317/73 , C12Q1/6888 , G01N33/505 , G01N33/6893 , G01N2333/4703
摘要： The present invention provides an agent for the prophylaxis or therapy of autoimmune diseases or allergic diseases, which contains an anti-Embigin antibody, particularly an anti-Embigin antibody showing cytotoxicity or a cytotoxicity inducing activity, an agent for the prophylaxis or therapy of diseases involving Th17 cell, and a cytotoxic agent to Th17 cell. In addition, an agent for detection of Th17 cell, which contains an anti-Embigin antibody, a convenient detection method of Th17 cell, which uses the agent, a method of efficiently delivering a drug and the like in a Th17 cell selective manner, which uses an anti-Embigin antibody, and a drug delivery system to Th17 cell are provided.
摘要翻译：本发明提供了一种预防或治疗自身免疫性疾病或过敏性疾病的药剂，其含有抗Embigin抗体，特别是显示细胞毒性或细胞毒性诱导活性的抗Embigin抗体，用于预防或治疗涉及 Th17细胞，Th17细胞的细胞毒剂。另外，作为Th17细胞的检测用试剂，其含有抗Embigin抗体，使用该试剂的Th17细胞的方便的检测方法，Th17细胞选择性有效地输送药物等的方法，使用抗Embigin抗体，提供了Th17细胞的药物递送系统。

16. 发明申请

US20120107364A1 ANTIBODY HAVING ANTI-CANCER ACTIVITY 有权
标题翻译：具有抗癌活性的抗体
公开(公告)号：US20120107364A1
公开(公告)日：2012-05-03
申请号：US13382468
申请日：2010-07-07
申请人： Masunori Kajikawa , Masahito Sugiura , Kazuyuki Atarashi , Emi Shimizu , Chiemi Matsumi , Yukie Saitoh
发明人： Masunori Kajikawa , Masahito Sugiura , Kazuyuki Atarashi , Emi Shimizu , Chiemi Matsumi , Yukie Saitoh
IPC分类号： A61K39/00 , A61P37/04 , C12N5/16 , A61P35/00 , C07K16/30 , C12N15/13
CPC分类号： C07K16/30 , A61K2039/505 , C07K16/3046 , C07K2317/73
摘要： By utilizing an SST-REX method, a cDNA encoding a protein expressed on a cell surface or secreted from the cell was selected from a cDNA library derived from a cancer cell line. Monoclonal antibodies against the protein encoding the selected cDNA were prepared. The in vitro and in vivo anti-cancer activities and binding to various cancer cells lines were examined. As a result, a monoclonal antibody which binds to a PODXL2 protein, and which had excellent anti-cancer activities was found. Further, a region including an epitope of the antibody was successfully identified, and the amino acid sequences of variable regions of a light chain and a heavy chain were successfully determined.
摘要翻译：通过使用SST-REX方法，从源自癌细胞系的cDNA文库中选择编码在细胞表面表达或从细胞分泌的蛋白质的cDNA。制备针对编码所选cDNA的蛋白质的单克隆抗体。检查体外和体内抗癌活性并结合各种癌细胞系。结果发现结合PODXL2蛋白的单克隆抗体具有优异的抗癌活性。此外，成功鉴定了包含抗体的表位的区域，成功地测定了轻链和重链的可变区的氨基酸序列。

17. 发明授权

US07030028B2 Etching method 失效
标题翻译：蚀刻方法
公开(公告)号：US07030028B2
公开(公告)日：2006-04-18
申请号：US10312292
申请日：2001-06-26
申请人： Takuya Mori , Koichiro Inazawa , Noriyuki Kobayashi , Masahito Sugiura , Yoshihiro Hayashi , Keizo Kinoshita
发明人： Takuya Mori , Koichiro Inazawa , Noriyuki Kobayashi , Masahito Sugiura , Yoshihiro Hayashi , Keizo Kinoshita
IPC分类号： H01L21/302
CPC分类号： H01L21/76811 , H01L21/31138 , H01L21/76804 , H01L21/76813 , H01L21/76834 , H01L21/76835
摘要： A dual damascene structure with a lesser degree of shoulder loss is achieved. In a method for forming a dual damascene structure having a shoulder in an organic low k film layer by dry-etching the organic low k film layer 208 and a mask layer 210 formed over the organic low k film 208 using at least two different mixed gases, a first step in which the mask layer is etched using a first process gas and then the organic low k film layer is etched into a predetermined depth by continuously using the first process gas and a second step following the first step, in which the organic low k film layer is etched using a second process gas are executed. Since a protective wall is formed at a side wall of a via during the first step, the extent of the shoulder loss occurring in the junction region where a trench and a via form a junction can be reduced.
摘要翻译：实现肩部损失程度较小的双镶嵌结构。在通过使用至少两种不同的混合气体干法蚀刻有机低k膜层208和形成在有机低k膜208上的掩模层210来形成具有有机低k膜层中的肩部的双镶嵌结构的方法中，使用第一处理气体蚀刻掩模层然后通过连续使用第一处理气体将有机低k膜层蚀刻到预定深度的第一步骤和第一步骤之后的第二步骤，其中有机使用第二工艺气体蚀刻低k膜层。由于在第一步骤中在通孔的侧壁处形成保护壁，所以可以减少在沟槽和通孔形成结的接合区域中发生的肩部损耗的程度。

18. 发明授权

US06890848B2 Fabrication process of a semiconductor device 失效
标题翻译：半导体器件的制造工艺
公开(公告)号：US06890848B2
公开(公告)日：2005-05-10
申请号：US10069274
申请日：2001-06-28
申请人： Kaoru Maekawa , Satohiko Hoshino , Masahito Sugiura , Federica Allegretti
发明人： Kaoru Maekawa , Satohiko Hoshino , Masahito Sugiura , Federica Allegretti
IPC分类号： H01L21/3105 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/522 , H01L21/4763
CPC分类号： H01L21/76835 , H01L21/02126 , H01L21/0217 , H01L21/02211 , H01L21/02282 , H01L21/02299 , H01L21/02318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76829
摘要： A method of fabricating a semiconductor device includes the steps of forming a first insulation film on a substrate by a spin-on process, applying a curing process to the first insulation film at a temperature of 380-500° C. over a duration of 5-180 seconds, and forming a second insulation film on the first insulation film by a spin-on process.
摘要翻译：一种制造半导体器件的方法包括以下步骤：通过旋涂工艺在衬底上形成第一绝缘膜，在380-500℃的温度下对第一绝缘膜施加固化过程，持续时间为5 -180秒，并且通过旋涂工艺在第一绝缘膜上形成第二绝缘膜。

19. 发明申请

US20050026454A1 Film forming method and film forming apparatus 审中-公开
标题翻译：成膜方法和成膜装置
公开(公告)号：US20050026454A1
公开(公告)日：2005-02-03
申请号：US10927102
申请日：2004-08-27
申请人： Nobuo Konishi , Mitsuaki Iwashita , Hiroki Ohno , Shigeru Kawamura , Masahito Sugiura
发明人： Nobuo Konishi , Mitsuaki Iwashita , Hiroki Ohno , Shigeru Kawamura , Masahito Sugiura
IPC分类号： H01L21/20 , H01L21/768 , H01L21/4763 , H01L21/31 , H01L21/469 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76837 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.
摘要翻译：本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性具有所谓的“锚效应”。

20. 发明授权

US06467491B1 Processing apparatus and processing method 失效
标题翻译：处理装置及处理方法
公开(公告)号：US06467491B1
公开(公告)日：2002-10-22
申请号：US09631978
申请日：2000-08-03
申请人： Masahito Sugiura , Hiroshi Shinriki , Hideki Kiryu , Shintaro Aoyama
发明人： Masahito Sugiura , Hiroshi Shinriki , Hideki Kiryu , Shintaro Aoyama
IPC分类号： B08B704
CPC分类号： H01L21/67196 , H01L21/67115 , H01L21/681 , Y10S134/902
摘要： A pretreatment chamber 120 is disposed within a vacuum transfer chamber 102 of a processing apparatus 100. The pretreatment chamber 120 is equipped with an orienting mechanism 128 and a UV lamp 124. The orienting mechanism 128 orients a wafer W through rotation of a table 130, on which the wafer W is placed, and by use of an optical sensor 134. Synchronously with the orientation, the UV lamp 124 emits UV through a UV transmission window 126 fitted to a ceiling portion of the pretreatment chamber 120, to thereby irradiate the surface of the wafer W with UV. Thus adhering to the wafer W is removed. A processing gas supplied into the pretreatment chamber 120 is also irradiated with UV. Active atoms generated from the processing gas also contribute to removal of carbon. Since the pretreatment chamber 120 is formed within the vacuum transfer chamber 102, the footprint of the processing apparatus can be reduced. Since orientation of the wafer W and removal of contaminants are performed concurrently, throughput is improved.
摘要翻译：预处理室120设置在处理设备100的真空转移室102内。预处理室120配备有定向机构128和UV灯124.定向机构128通过台130的旋转定向晶片W，在其上放置晶片W，并且通过使用光学传感器134.与该取向同步，UV灯124通过装配到预处理室120的顶部的UV透射窗口126发射UV，从而照射表面的晶片W。因此，除去了附着在晶片W上。供给到预处理室120的处理气体也用UV照射。从处理气体产生的活性原子也有助于去除碳。由于预处理室120形成在真空传送室102内，因此能够减少处理装置的占地面积。由于晶片W的取向和污染物的去除同时进行，因此提高了生产率。

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