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11. 发明申请

US20090117270A1 METHOD FOR TREATING SUBSTRATE AND RECORDING MEDIUM 审中-公开
标题翻译：用于处理衬底和记录介质的方法
公开(公告)号：US20090117270A1
公开(公告)日：2009-05-07
申请号：US12088153
申请日：2006-07-25
申请人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano
发明人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano
IPC分类号： C23C16/02
CPC分类号： C23C16/0227 , C23C16/16 , C23C16/34 , C23C16/4405
摘要： A method for processing a substrate includes a film forming step of supplying a film forming gas into the processing chamber to form a film on the substrate, a cleaning step of supplying a plasma-exited cleaning gas into the processing chamber after the film forming step to clean the inside of the processing chamber, and a coating step of forming a coating within the processing chamber after the cleaning step. The cleaning step includes a high pressure cleaning of regulating the pressure in the processing chamber so that cleaning is mainly performed by molecules formed by recombining radicals in the cleaning gas, and the coating step includes a low temperature film forming step of forming the coating film under the condition that the temperature of a substrate supporting table is set lower than that in the film formation on the substrate during the film formation step.
摘要翻译：一种处理基板的方法包括：将成膜气体供给到处理室中以在基板上形成膜的成膜步骤，在成膜步骤之后将等离子体排出的清洗气体供给到处理室中的清洗步骤，清洁处理室的内部，以及在清洁步骤之后在处理室内形成涂层的涂布步骤。清洗步骤包括调节处理室中的压力的高压清洗，使得清洗主要由通过在清洁气体中重新组合形成的分子进行，并且涂布步骤包括在下面形成涂膜的低温成膜步骤在成膜步骤中将基板支撑台的温度设定为低于基板上的成膜的条件。

12. 发明授权

US07456109B2 Method for cleaning substrate processing chamber 失效
标题翻译：清洗基板处理室的方法
公开(公告)号：US07456109B2
公开(公告)日：2008-11-25
申请号：US10536322
申请日：2003-11-14
申请人： Hideaki Yamasaki , Kazuhito Nakamura , Koumei Matsuzawa , Tsukasa Matsuda , Yumiko Kawano
发明人： Hideaki Yamasaki , Kazuhito Nakamura , Koumei Matsuzawa , Tsukasa Matsuda , Yumiko Kawano
IPC分类号： H01L21/302
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.
摘要翻译：一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

13. 发明授权

US07067422B2 Method of forming a tantalum-containing gate electrode structure 失效
标题翻译：形成含钽栅电极结构的方法
公开(公告)号：US07067422B2
公开(公告)日：2006-06-27
申请号：US10830804
申请日：2004-03-31
申请人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano , Gert J. Leusink , Fenton R. McFeely , John J. Yurkas , Vijay Narayanan
发明人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano , Gert J. Leusink , Fenton R. McFeely , John J. Yurkas , Vijay Narayanan
IPC分类号： H01L21/44
CPC分类号： H01L21/28088 , H01L21/28194 , H01L29/4966 , H01L29/51 , H01L29/517
摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.
摘要翻译：一种通过在处理室中提供具有高k电介质层的衬底并在热化学气相沉积工艺中在高k电介质层上形成含钽层的方法来形成含钽栅电极结构的方法，将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体，（CH 3）2））前体气体。在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

14. 发明申请

US20060124151A1 Method for cleaning substrate processing chamber 失效
标题翻译：清洗基板处理室的方法
公开(公告)号：US20060124151A1
公开(公告)日：2006-06-15
申请号：US10536322
申请日：2003-11-14
申请人： Hideaki Yamasaki , Kazuhito Nakamura , Koumei Matsuzawa , Tsukasa Matsuda , Yumiko Kawano
发明人： Hideaki Yamasaki , Kazuhito Nakamura , Koumei Matsuzawa , Tsukasa Matsuda , Yumiko Kawano
IPC分类号： B08B6/00
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.
摘要翻译：一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

15. 发明申请

US20080291307A1 IMAGING APPARATUS HAVING ELECTRON SOURCE ARRAY 失效
标题翻译：具有电子源阵列的成像装置
公开(公告)号：US20080291307A1
公开(公告)日：2008-11-27
申请号：US12123707
申请日：2008-05-20
申请人： Yuki Honda , Masakazu Namba , Yoshiyuki Hirano , Saburo Okazaki , Norifumi Egami , Toshihisa Watabe , Yoshiro Takiguchi , Akira Kobayashi , Shigeo Itoh , Masateru Taniguchi , Kazuhito Nakamura , Kenta Miya , Yoshiyuki Okuda , Kazuto Sakemura
发明人： Yuki Honda , Masakazu Namba , Yoshiyuki Hirano , Saburo Okazaki , Norifumi Egami , Toshihisa Watabe , Yoshiro Takiguchi , Akira Kobayashi , Shigeo Itoh , Masateru Taniguchi , Kazuhito Nakamura , Kenta Miya , Yoshiyuki Okuda , Kazuto Sakemura
IPC分类号： H04N5/335
CPC分类号： H04N5/32 , H01J31/26 , H01J31/40
摘要： An imaging apparatus includes an electron emission array having electron sources arranged in matrix form, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film, wherein the control and drive circuit is further configured to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film in any one or more blanking periods excluding both a blanking period immediately following the given video signal output period and a blanking period immediately preceding a next video signal output period in which the one or more horizontal scan lines will be selected next time.
摘要翻译：一种成像设备包括：具有以矩阵形式布置的电子源的电子发射阵列，与电子发射阵列相对的光电转换膜;以及控制和驱动电路，配置为在给定的视频信号输出周期中选择一个或多个水平扫描线，使包括在所选择的一个或多个水平扫描线中的电子源向光电转换膜发射电子，其中控制和驱动电路还被配置为使包括在所选择的一个或多个水平扫描线中的电子源发射在除了给定视频信号输出周期之后的消隐期以及紧接在下一个视频信号输出周期之前的消隐周期之外的任何一个或多个消隐周期中的一个或多个消隐周期中的电子朝向光电转换膜，其中将选择一个或多个水平扫描线下次。

16. 发明申请

US20080290254A1 IMAGING APPARATUS HAVING ELECTRON SOURCE ARRAY 有权
标题翻译：具有电子源阵列的成像装置
公开(公告)号：US20080290254A1
公开(公告)日：2008-11-27
申请号：US12123719
申请日：2008-05-20
申请人： Masakazu NAMBA , Yuki Honda , Yoshiyuki Hirano , Saburo Okazaki , Norifumi Egami , Toshihisa Watabe , Yoshiro Takiguchi , Akira Kobayashi , Shigeo Itoh , Masateru Taniguchi , Kazuhito Nakamura , Kenta Miya , Yoshiyuki Okuda , Nobuyasu Negishi
发明人： Masakazu NAMBA , Yuki Honda , Yoshiyuki Hirano , Saburo Okazaki , Norifumi Egami , Toshihisa Watabe , Yoshiro Takiguchi , Akira Kobayashi , Shigeo Itoh , Masateru Taniguchi , Kazuhito Nakamura , Kenta Miya , Yoshiyuki Okuda , Nobuyasu Negishi
IPC分类号： H01L31/00
CPC分类号： H01J31/38 , H01J31/49 , H04N5/217 , H04N5/30
摘要： An imaging apparatus includes an electron emission array having electron sources arranged in matrix form and having a plurality of horizontal scan lines, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more of the horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film to produce a video signal, wherein the control and drive circuit is configured to cause the electron sources included in unselected one or more horizontal scan lines not selected in the given video signal output period to emit electrons toward the photoelectric conversion film in a blanking period immediately preceding the given video signal output period.
摘要翻译：一种成像装置，包括：电子发射阵列，其具有以矩阵形式布置并具有多条水平扫描线的电子源，与电子发射阵列相对的光电转换膜;以及控制和驱动电路，被配置为选择一个或多个水平在给定的视频信号输出周期中扫描线，并且使包括在所选择的一个或多个水平扫描线中的电子源向光电转换膜发射电子以产生视频信号，其中控制和驱动电路被配置为使得电子源包括在给定视频信号输出周期内未选择的未选择的一个或多个水平扫描线，以在紧接在给定视频信号输出周期之前的消隐期间向光电转换膜发射电子。

17. 发明申请

US20050093548A1 Underground exploration apparatus, system and method 失效
标题翻译：地下勘探设备，系统及方法
公开(公告)号：US20050093548A1
公开(公告)日：2005-05-05
申请号：US10991404
申请日：2004-11-19
申请人： Tomoaki Ueda , Kazuhito Nakamura , Yukio Kishimoto , Naoya Ichimura , Tokugen Yasuda
发明人： Tomoaki Ueda , Kazuhito Nakamura , Yukio Kishimoto , Naoya Ichimura , Tokugen Yasuda
IPC分类号： G01N27/04 , G01V3/06 , G01V3/00
CPC分类号： G01V3/06 , G01N27/043
摘要： The object of the present invention is to realize a low-invasive underground exploration apparatus, system, and method which are capable of specifying the kind, three-dimensional position, and amount of a substance present in the ground. The underground exploration apparatus, system, and method includes: measuring, at multiple points, a high frequency voltage that appears upon conduction of high frequency current through the ground to obtain measurement results at two or more frequency levels; employing an ground model using the finite element method, the boundary element method, an impedance network, or the like to estimate a substance in the ground by changing unknown quantities of the ground model such as local dielectric constant and electric conductivity so as to make an error between the actual measured value and the calculated value smaller; and displaying input information of the ground model and results of the estimation processing two-dimensionally or three-dimensionally.
摘要翻译：本发明的目的是实现能够指定存在于地面中的物质的种类，三维位置和量的低侵入式地下勘探装置，系统和方法。地下探测装置，系统和方法包括：在多个点测量在通过地面传导高频电流时出现的高频电压，以获得两个或多个频率水平的测量结果; 采用有限元法，边界元法，阻抗网络等的地面模型，通过改变诸如局部介电常数和电导率的地面模型的未知量来估计地面中的物质，从而使实际测量值与计算值之间的误差较小; 并且二维或三维地显示地面模型的输入信息和估计处理的结果。

18. 发明授权

US5752476A Exhaust controller for two-stroke-cycle engine 失效
标题翻译：二冲程发动机排气控制器
公开(公告)号：US5752476A
公开(公告)日：1998-05-19
申请号：US832778
申请日：1997-04-04
申请人： Kazuhito Nakamura
发明人： Kazuhito Nakamura
IPC分类号： F02B25/20 , F02B27/06 , F02D13/02 , F02D9/06
CPC分类号： F02D13/0284 , Y02T10/18
摘要： A two-stroke-cycle engine is provided with a main exhaust port and a pair of auxiliary exhaust ports and includes a main exhaust valve unit slidably disposed to the main exhaust port for controlling an upper edge position of the main exhaust port and a pair of right and left auxiliary exhaust valve units disposed rotatably for opening and closing right and left auxiliary exhaust passages formed to right and left sides of a main exhaust passage formed to the engine. An exhaust controller of the engine is characterized in that a driving unit is connected to the main exhaust valve unit and the right and left auxiliary exhaust valve units are coupled with an end of the main exhaust valve unit on the main exhaust port side through a coupling pin so as to be operatively associated with the main exhaust valve unit, the right and left auxiliary exhaust valve units being disposed symmetrically with respect to the main exhaust valve unit.
摘要翻译：二冲程发动机设有主排气口和一对辅助排气口，其主排气阀单元可滑动地设置在主排气口上，用于控制主排气口的上边缘位置和一对右辅助排气阀单元和左辅助排气阀单元可旋转地设置，用于打开和关闭形成在形成于发动机的主排气通道的左右两侧的左和右辅助排气通道。发动机的排气控制器的特征在于，驱动单元连接到主排气门单元，左右辅助排气阀单元通过联轴器与主排气口侧的主排气门单元的一端连接销，以便与主排气门单元可操作地相关联，左和右辅助排气门单元相对于主排气门单元对称地设置。

19. 发明授权

US09190924B2 Indirect matrix converter 有权
标题翻译：间接矩阵转换器
公开(公告)号：US09190924B2
公开(公告)日：2015-11-17
申请号：US13816098
申请日：2011-08-02
申请人： Kazuhito Nakamura
发明人： Kazuhito Nakamura
IPC分类号： H02M1/34 , H02M5/458 , H02M5/297 , H02M5/22
CPC分类号： H02M5/458 , H02M5/225 , H02M5/297 , H02M5/4585 , H02M2001/348
摘要： An indirect matrix converter includes a converter (2) connected through a positive polarity bus (4p) and a negative polarity bus (4n) to an inverter (6). A clamp diode (28u) has its anode connected to the positive polarity bus (4p) and has its cathode connected to one end of a capacitor (30). The other end of the capacitor (30) is connected to the anode of a clamp diode (28d) of which cathode is connected to the negative polarity bus (4n). Upper discharge preventing snubber circuits (20u) are provided for switch devices (16uu through 16uw) of the inverter (6), and lower discharge preventing snubber circuits (20d) are provided for switch devices (16du through 16dw) of the inverter (6). Discharge resistors (26u) of the upper discharge preventing snubber circuits (20u) are connected to the anode of the diode (28d), and discharge resistors (26d) of the lower discharge preventing snubber circuits (20d) are connected to the cathode of the diode (28u).
摘要翻译：间接矩阵转换器包括通过正极母线（4p）和负极母线（4n）连接到逆变器（6）的转换器（2）。钳位二极管（28u）的阳极连接到正极母线（4p），并且其阴极连接到电容器（30）的一端。电容器（30）的另一端连接到阴极连接到负极母线（4n）的钳位二极管（28d）的阳极。为逆变器（6）的开关装置（16uu〜16uw）设置有上部放电防止缓冲电路（20u），为逆变器（6）的开关装置（16du〜16dw）设置有低放电防止缓冲电路（20d）。上部放电防止缓冲电路（20u）的放电电阻（26u）连接到二极管（28d）的阳极，下部放电抑制缓冲电路（20d）的放电电阻（26d）连接到二极管二极管（28u）。

20. 发明申请

US20130188404A1 Indirect Matrix Converter 有权
标题翻译：间接矩阵转换器
公开(公告)号：US20130188404A1
公开(公告)日：2013-07-25
申请号：US13816098
申请日：2011-08-02
申请人： Kazuhito Nakamura
发明人： Kazuhito Nakamura
IPC分类号： H02M5/458
CPC分类号： H02M5/458 , H02M5/225 , H02M5/297 , H02M5/4585 , H02M2001/348
摘要： An indirect matrix converter includes a converter (2) connected through a positive polarity bus (4p) and a negative polarity bus (4n) to an inverter (6). A clamp diode (28u) has its anode connected to the positive polarity bus (4p) and has its cathode connected to one end of a capacitor (30). The other end of the capacitor (30) is connected to the anode of a clamp diode (28d) of which cathode is connected to the negative polarity bus (4n). Upper discharge preventing snubber circuits (20u) are provided for switch devices (16uu through 16uw) of the inverter (6), and lower discharge preventing snubber circuits (20d) are provided for switch devices (16du through 16dw) of the inverter (6). Discharge resistors (26u) of the upper discharge preventing snubber circuits (20u) are connected to the anode of the diode (28d), and discharge resistors (26d) of the lower discharge preventing snubber circuits (20d) are connected to the cathode of the diode (28u).
摘要翻译：间接矩阵转换器包括通过正极母线（4p）和负极母线（4n）连接到逆变器（6）的转换器（2）。钳位二极管（28u）的阳极连接到正极母线（4p），并且其阴极连接到电容器（30）的一端。电容器（30）的另一端连接到阴极连接到负极母线（4n）的钳位二极管（28d）的阳极。为逆变器（6）的开关装置（16uu〜16uw）设置有上部放电防止缓冲电路（20u），为逆变器（6）的开关装置（16du〜16dw）设置有低放电防止缓冲电路（20d）。上部放电防止缓冲电路（20u）的放电电阻（26u）连接到二极管（28d）的阳极，下部放电抑制缓冲电路（20d）的放电电阻（26d）连接到二极管二极管（28u）。

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