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11. 发明授权

US09385333B2 Process for producing thin film field-effect transistor 有权
标题翻译：薄膜场效应晶体管的制造方法
公开(公告)号：US09385333B2
公开(公告)日：2016-07-05
申请号：US11991379
申请日：2006-08-24
申请人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
发明人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L51/05 , H01L51/10 , H01L51/00
CPC分类号： H01L51/0545 , H01L51/0052 , H01L51/0055 , H01L51/0074 , H01L51/0094 , H01L51/105
摘要： A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.
摘要翻译：制造薄膜场效应晶体管的工艺包括提供栅电极，栅极绝缘膜以及源极和漏极，用硫酸和过氧化氢的混合物处理源极和漏极的整个表面，并提供在栅极绝缘膜上含有有机电子材料的有机电子材料层与源极和漏极电接触。含有有机电子材料的磺化产物的有机电子材料，硫酸和过氧化氢的反应产物仅存在于源电极和有机电子材料层之间的界面处，并且在漏电极和有机电子之间的界面从而增加有机电子材料的导电性，并减少从源电极到有机电子材料的电荷注入阻挡层。

12. 发明授权

US07786470B2 Switching element 失效
标题翻译：开关元件
公开(公告)号：US07786470B2
公开(公告)日：2010-08-31
申请号：US10545854
申请日：2004-02-17
申请人： Haruo Kawakami , Hisato Kato , Masami Kuroda , Nobuyuki Sekine , Keisuke Yamashiro
发明人： Haruo Kawakami , Hisato Kato , Masami Kuroda , Nobuyuki Sekine , Keisuke Yamashiro
IPC分类号： H01L35/24
CPC分类号： G11C13/02 , C07D495/04 , H01L27/28 , H01L51/0051 , H01L51/0059 , H01L51/0067 , H01L51/0068 , H01L51/0583
摘要： The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.
摘要翻译：本发明提供了具有稳定的双稳态特性和高跃迁电压的开关元件，并表现出优异的循环性能。开关元件相对于施加在电极之间的电压具有两个稳定的电阻值，其中第一电极层，有机双稳态材料层和第二电极层在基板上依次形成为薄膜，构成有机双稳态材料的有机双稳态材料有机双稳态材料层是基于喹啉的化合物或基于单甲基的化合物。构成第二电极层的金属被扩散到有机双稳态材料层中。优选通过气相沉积形成第二电极层，并且在气相沉积期间基板的温度为30-150℃。

13. 发明申请

US20090289249A1 Oxide Semiconductor, Thin-Film Transistor and Method for Producing the Same 失效
标题翻译：氧化物半导体，薄膜晶体管及其制造方法
公开(公告)号：US20090289249A1
公开(公告)日：2009-11-26
申请号：US12086628
申请日：2007-05-25
申请人： Hisato Kato , Haruo Kawakami , Nobuyuki Sekine , Kyoko Kato
发明人： Hisato Kato , Haruo Kawakami , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L29/22 , H01L21/36
CPC分类号： H01L29/78693 , C01G19/006 , C01P2006/40 , H01L29/66969
摘要： Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.
摘要翻译：公开了具有非晶结构的氧化物半导体，其中实现了更高的迁移率和降低的载流子浓度。还公开了薄膜晶体管，氧化物半导体的制造方法以及薄膜晶体管的制造方法。具体公开的是氧化物半导体，其特征在于由以下通式表示的无定形氧化物：Inx + 1MZny + 1SnzO（4 + 1.5x + y + 2z）（其中M为Ga或Al，0 < x <= 1，-0.2 <= y <= 1.2，z> = 0.4和0.5 <=（x + y）/ z <= 3）。该氧化物半导体优选在成膜后在氧化气体气氛中进行热处理。还具体公开了一种薄膜晶体管，其特征在于包括氧化物半导体。

14. 发明申请

US20090039342A1 Thin film field-effect transistor and process for producing the same 有权
标题翻译：薄膜场效应晶体管及其制造方法
公开(公告)号：US20090039342A1
公开(公告)日：2009-02-12
申请号：US11991379
申请日：2006-08-24
申请人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
发明人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0052 , H01L51/0055 , H01L51/0074 , H01L51/0094 , H01L51/105
摘要： Such a thin film transistor and a process for producing the same are provided that is capable of preventing the FET characteristics from being deteriorated with a short channel length. Such a thin film field-effect transistor and a process for producing the same are provided that contains a substrate 10, a gate electrode 11, a gate insulating film 12 that is provided on the gate electrode, a source electrode 15 and a drain electrode 14 that are provided on the gate insulating film with a prescribed distance, and an organic electronic material layer 13 containing an organic electronic material that is provided on the gate insulating film and is in electrical contact with the source electrode and the drain electrode, with an acid, an acid derivative and/or a reaction product of an acid and the organic electronic material being present at least a part of an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer.
摘要翻译：提供这样的薄膜晶体管及其制造方法，其能够防止FET特性由于短的沟道长度而劣化。提供这样的薄膜场效应晶体管及其制造方法，其包含基板10，栅极电极11，设置在栅电极上的栅极绝缘膜12，源极15和漏极14 设置在规定距离的栅极绝缘膜上的有机电子材料层13和含有设置在栅极绝缘膜上并与源电极和漏电极电接触的有机电子材料的有机电子材料层13与酸，酸和有机电子材料的酸衍生物和/或反应产物存在于源电极和有机电子材料层之间的界面的至少一部分以及漏电极和有机电子材料层之间的界面。

15. 发明申请

US20070172697A1 Switching element 失效
标题翻译：开关元件
公开(公告)号：US20070172697A1
公开(公告)日：2007-07-26
申请号：US10558259
申请日：2004-08-12
申请人： Haruo Kawakami , Keisuke Yamashiro , Hisato Kato
发明人： Haruo Kawakami , Keisuke Yamashiro , Hisato Kato
IPC分类号： B32B19/00
CPC分类号： H01L51/0065 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/56 , H01L51/0051 , H01L51/0052 , H01L51/0067 , H01L51/0068 , H01L51/0591 , H01L51/0595
摘要： A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticles and the organic bistable compound.
摘要翻译：具有双稳态特性的开关元件具有通过提高转换概率而稳定的开关特性。开关元件在至少两个电极之间具有有机双稳态材料层。有机双稳态材料层含有对施加电压具有两个稳定的电阻值的有机双稳态化合物，其中开关元件具有第一电极层，金属微粒含有层，有机双稳态材料层和第二电极的薄膜层，在基板上依次形成，金属微粒含有层含有金属微粒和有机双稳态化合物。

16. 发明申请

US20070001936A1 Display device and method of forming and driving the same 审中-公开
标题翻译：显示装置及其形成和驱动方法
公开(公告)号：US20070001936A1
公开(公告)日：2007-01-04
申请号：US10569257
申请日：2004-08-12
申请人： Haruo Kawakami , Hisato Kato , Keisuke Yamashiro
发明人： Haruo Kawakami , Hisato Kato , Keisuke Yamashiro
IPC分类号： G09G3/30
CPC分类号： G09G3/3208 , G09G2300/08 , G09G2300/0885 , G09G2310/02 , G09G2310/0251 , G09G2310/0256 , G09G2310/061 , G09G2320/043 , H01L27/3244
摘要： An organic EL display device and method of forming and driving the same is matrix-driven by using a two-terminal nonlinear element. A display device having a substrate and first stripe electrodes, second stripe electrodes disposed crosswise to the first stripe electrodes, and a plurality of pixels disposed overlappingly between the first and second stripe electrodes on the substrate. Each pixel is provided with a switching element including a two-terminal nonlinear element connected electrically to the first stripe electrodes, a light-emitting portion connected electrically to the switching element and the second stripe electrodes, and a capacitor portion containing an organic dielectric material as a dielectric layer, connected electrically to the switching element and the second stripe electrodes in parallel with the light-emitting portion.
摘要翻译：有机EL显示装置及其形成和驱动方法通过使用两端非线性元件进行矩阵驱动。具有基板和第一条状电极的显示装置，与第一条形电极交叉设置的第二条形电极以及重叠设置在基板上的第一和第二条状电极之间的多个像素。每个像素设置有开关元件，其包括与第一条形电极电连接的两端非线性元件，与开关元件和第二条带电极电连接的发光部分，以及包含有机电介质材料的电容器部分，电介质层，与所述开关元件电连接，所述第二条状电极与所述发光部分平行。

17. 发明申请

US20060256503A1 Capacitor 审中-公开
标题翻译：电容器
公开(公告)号：US20060256503A1
公开(公告)日：2006-11-16
申请号：US10562419
申请日：2004-06-29
申请人： Hisato Kato , Haruo Kawakami , Keisuke Yamashiro
发明人： Hisato Kato , Haruo Kawakami , Keisuke Yamashiro
IPC分类号： H01G4/06
CPC分类号： H01B3/004 , H01B3/301 , H01B3/303 , H01G4/14 , H01G4/18 , H01G4/206
摘要： A flexible capacitor easily produced at low temperature. The capacitor has a dielectric material layer and two electrodes sandwiching the layer. The dielectric material layer contains metal microparticles and/or an organic charge trapping material in an organic insulating material, and the metal microparticles, have an ionization potential and an electron affinity at an energy level between the ionization potential and the electron affinity of the organic insulating material. Once the metal microparticles are charged by applying a voltage, the charge is trapped in the metal microparticles, due to the metal microparticles' energy level relative to the organic insulating material. The trapped charge acts in the same manner as dielectric polarization in the dielectric material, so that extremely large dielectric constant can be obtained practically even when the organic insulating material has a small dielectric constant.
摘要翻译：柔性电容器容易在低温下产生。电容器具有电介质材料层和两层夹着该层的电极。介电材料层在有机绝缘材料中含有金属微粒和/或有机电荷捕获材料，金属微粒在有机绝缘体的电离电位和电子亲和力之间的能级具有电离电位和电子亲和力材料。一旦通过施加电压对金属微粒进行充电，由于金属微粒相对于有机绝缘材料的能级，电荷被俘获在金属微粒中。捕获的电荷以与电介质材料中的介电极化相同的方式起作用，从而即使当有机绝缘材料具有小的介电常数时也可以获得极大的介电常数。

18. 发明申请

US20060202196A1 Transistor 审中-公开
标题翻译：晶体管
公开(公告)号：US20060202196A1
公开(公告)日：2006-09-14
申请号：US11336429
申请日：2006-01-20
申请人： Haruo Kawakami , Hisato Kato , Takahiko Maeda , Nobuyuki Sekine
发明人： Haruo Kawakami , Hisato Kato , Takahiko Maeda , Nobuyuki Sekine
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L21/31683 , H01L51/001 , H01L51/0051 , H01L51/0052 , H01L51/0562 , H01L51/0583
摘要： A thin film field effect transistor is disclosed that includes a gate electrode, a gate insulator film the on gate electrode, and a first organic electronic material film containing a first organic electronic material on the gate insulator film. A source electrode and a drain electrode are spaced apart from each other on the first organic electronic material film. The first organic electronic material film includes a portion between the source electrode and the drain electrode that is in contact with the gate insulator film. This portion provides a current path. The current is controlled by the potential of the gate electrode. There is a second organic electronic material film that is in contact with the surface of first organic electronic material film opposite to the portion that provides the current path. The second organic electronic material film contains a second organic electronic material and an electron acceptor or an electron donor. The thin film field effect transistor facilitates accumulating electric charges in the channel on the gate insulator film and realizing a high response frequency.
摘要翻译：公开了一种薄膜场效应晶体管，其包括栅极电极，栅极电极上的栅极绝缘膜，以及在栅极绝缘膜上含有第一有机电子材料的第一有机电子材料膜。源电极和漏电极在第一有机电子材料膜上彼此间隔开。第一有机电子材料膜包括与栅绝缘膜接触的源电极和漏电极之间的部分。该部分提供当前路径。电流由栅电极的电位控制。存在与第一有机电子材料膜的与提供电流路径的部分相对的表面接触的第二有机电子材料膜。第二有机电子材料膜含有第二有机电子材料和电子受体或电子给体。薄膜场效应晶体管有助于在栅极绝缘膜上的沟道中积累电荷并实现高响应频率。

19. 发明申请

US20110188297A1 MAGNETIC MEMORY ELEMENT, DRIVING METHOD FOR SAME, AND NONVOLATILE STORAGE DEVICE 有权
标题翻译：磁记忆元件，用于其的驱动方法和非易失存储器件
公开(公告)号：US20110188297A1
公开(公告)日：2011-08-04
申请号：US13001343
申请日：2008-09-05
申请人： Yasushi Ogimoto , Haruo Kawakami
发明人： Yasushi Ogimoto , Haruo Kawakami
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01F10/3295 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01F10/133 , H01F10/3268 , H01F10/3286 , H01L27/224 , H01L43/08 , Y10T428/1107 , Y10T428/1143
摘要： In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.
摘要翻译：根据本发明的一个方面，磁存储元件将信息记录在具有自由层，钉扎层和夹在其间的非磁性层的自旋阀结构中。磁存储元件在自由层上还具有单独的非磁性层和具有根据温度变化的磁特性的磁性变化层。在自旋阀结构的周边部分设置有多个切口，包括具有不同形状的一个切口。驱动磁存储元件的方法的特征在于通过施加单极电脉冲来记录信息。

20. 发明申请

US20110102939A1 SPIN VALVE ELEMENT, METHOD OF DRIVING THE SAME, AND STORAGE DEVICE USING THE SAME 有权
标题翻译：旋转阀元件，其驱动方法以及使用其的存储装置
公开(公告)号：US20110102939A1
公开(公告)日：2011-05-05
申请号：US12992864
申请日：2008-09-05
申请人： Haruo Kawakami , Yasushi Ogimoto
发明人： Haruo Kawakami , Yasushi Ogimoto
IPC分类号： G11B5/82 , G11B5/012
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01F10/325 , H01F10/3254 , H01F10/3286
摘要： Provided is a spin valve element capable of performing multi-value recording, which includes a pair of ferromagnetic layers having different coercivities from each other, and sandwiching an insulating layer or a non-magnetic layer. The ferromagnetic layer having the smaller coercivity has a substantially circular in-plane profile, and a plurality of island-shaped non-magnetic portions IN, IE, IW, and IS are included. In addition, a storage device is manufactured by using such a spin valve element.
摘要翻译：提供了能够进行多值记录的自旋阀元件，其包括彼此具有不同矫顽力的一对铁磁层，并夹持绝缘层或非磁性层。具有较小矫顽力的铁磁层具有大致圆形的面内轮廓，并且包括多个岛状非磁性部分IN，IE，IW和IS。此外，通过使用这种自旋阀元件制造存储装置。

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