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    • 12. 发明授权
    • Pigment preparation based on an azo pigment
    • 基于偶氮颜料的颜料制剂
    • US07855041B2
    • 2010-12-21
    • US11919662
    • 2006-04-20
    • Joachim WeberPatrick HoetzelKarl-Heinz SchweikartFrank Alfter
    • Joachim WeberPatrick HoetzelKarl-Heinz SchweikartFrank Alfter
    • G03G9/09C09B27/00C09D11/02G02C7/10
    • G02B5/223C09B67/0022C09B67/0046C09B67/0086
    • The invention relates to a pigment preparation which contains the monoazo pigment of the formula (I) and 0.1% to 40%, preferably 0.5% to 25%, in particular 1.0% to 17.5% of a pigment dispersant, in relation to the weight of the monoazo pigment of the formula (I), which is composed of disazo compounds at least 30% of the diazo compounds forming an asymmetric disazo compound of the formula (II) Y-X-A-X-Z  (II), in which A is biphenylene, 3,3′-dichlorobiphenylene, 3,3′-dimethoxybiphenylene, 3,3′-dimethylbiphenylene or 2,2′-dichloro-3,3′-dimethoxybiphenylene; X is a group —NH—CO—CH(COCH3)—N═N—, —N═N—CH(COCH3)—CO—NH—or —N═N—; Y is substituted or unsubstituted phenyl, pyrazolin-5-on-4-yl, 1-phenyl-Pyrazolin -5-on-4-Lyl, 2-hydroxynaphth-1-yl or 2-hydroxy-3-(phenylamino-carbonyl) naphth-1-yl, the substituents being C1-C4 alkyl, C1-C4 alkoxy, nitro, halogen or C1-C4 alkoxycarbonyl, and have the meaning of Y, and the compounds being further substituted with a sulfonic acid group present as an ammonium salt. Y stands for substituted or unsubstituted phenyl, pyrazolin-5-on-4-yl, 1-phenyl-pyrazolin-5-on-4-yl, 2-hydroxynaphth-1-yl or 2-hydroxy-3-(phenylaminocarbonyl)naphth-1-yl, the substituents being C1-C4-alkyl, C1-C4-alkoxy, nitro, halogen or C1-C4-alkoxycarbonyl and having the meaning of Y, and the compounds being further substituted with a sulphonic acid group present as an ammonium salt.
    • 本发明涉及一种颜料制剂,其含有式(I)的单偶氮颜料和0.1%至40%,优选0.5%至25%,特别是1.0%至17.5%的颜料分散剂,相对于 式(I)的单偶氮颜料由双偶氮化合物组成,至少30%的重氮化合物形成式(II)YXAXZ(II)的不对称双偶氮化合物,其中A为联苯,3,3' 二氯联苯,3,3'-二甲氧基联苯,3,3'-二甲基联苯或2,2'-二氯-3,3'-二甲氧基联苯; X是基团-NH-CO-CH(COCH 3)-N = N-,-N = N-CH(COCH 3)-CO-NH-或-N = N- Y是取代或未取代的苯基,吡唑啉-5-酮,1-苯基 - 吡唑啉-5-酮-4-基,2-羟基萘-1-基或2-羟基-3-(苯基氨基 - 羰基) 萘-1-基,取代基为C 1 -C 4烷基,C 1 -C 4烷氧基,硝基,卤素或C 1 -C 4烷氧基羰基,并且具有Y的含义,并且化合物进一步被作为铵存在的磺酸基取代 盐。 Y代表取代或未取代的苯基,吡唑啉-5-酮,1-苯基 - 吡唑啉-5-酮,2-羟基萘-1-基或2-羟基-3-(苯基氨基羰基)萘 取代基是C 1 -C 4 - 烷基,C 1 -C 4 - 烷氧基,硝基,卤素或C 1 -C 4 - 烷氧基羰基并且具有Y的含义,并且该化合物进一步被存在的磺酸基团取代 铵盐。
    • 14. 发明授权
    • Multistate triple-decker dyads in three distinct architectures for information storage applications
    • 用于信息存储应用的三种不同架构中的多层三层二层
    • US06728129B2
    • 2004-04-27
    • US10079938
    • 2002-02-19
    • Jonathan S. LindseyDavid F. BocianKarl-Heinz SchweikartWerner G. Kuhr
    • Jonathan S. LindseyDavid F. BocianKarl-Heinz SchweikartWerner G. Kuhr
    • G11C1100
    • G11C13/0014B82Y10/00G11B9/14G11B9/149G11C11/34G11C11/5664G11C13/0009G11C13/025G11C2213/77
    • This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode. The storage medium typically comprises a storage molecule that is a triple-decker sandwich heterodimer. Such dimers can provide 8 or more oxidation states and permit the storage of at least 3 bits per molecule.
    • 本发明提供了可提供高存储密度(例如,10,15bit / cm 3)的电位置可允许有效读/写的新型高密度存储器件,其提供高度的容错能力,并且 适合有效的化学合成和芯片制造。 器件本质上可锁定,缺陷容忍,并支持破坏性或非破坏性的读取周期。 在优选实施例中,该器件包括电耦合到存储介质的固定电极,该存储介质具有多种不同且可区分的氧化态,其中通过经由该存储介质从所述存储介质中添加或撤出一个或多个电子而将数据存储在所述氧化态中 电耦合电极。 存储介质通常包含作为三层三明治夹心异二聚体的储存分子。 这种二聚体可以提供8个或更多个氧化态,并允许每分子存储至少3位。