专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

DE2750605A1 未知
公开(公告)号：DE2750605A1
公开(公告)日：1978-05-24
申请号：DE2750605
申请日：1977-11-11
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： NONAKA YASUHIKO , GOTO NAOHIRO , SHIDARA KEIICHI
IPC分类号： H01J9/233 , H01J29/45 , H01J31/38 , H01L31/08
摘要： The target comprises a transparent substrate, an N-type transparent conductive film formed on the substrate, a P-type photoconductive film formed on the N-type conductive film and a heterojunction formed at the interface between the N- and P-type films. The P-type photoconductive film contains selenium, tellurium and arsenic of which selenium and arsenic are distributed continuously from the heterojunction throughout the thickness of the P-type photoconductive film whereas the distribution of tellurium is spaced from the heterojunction and localized in the vicinity of the heterojunction. The total amount of arsenic contained in the P-type photoconductive film ranges from 2.5 to 6% by weight.

12. 发明专利

DE3888704T2 未知
公开(公告)号：DE3888704T2
公开(公告)日：1994-07-14
申请号：DE3888704
申请日：1988-01-12
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： ISHIOKA SACHIO , TAKASAKI YUKIO , HIRAI TADAAKI , TSUJI KAZUTAKA , MAKISHIMA TATSUO , NONAKA YASUHIKO , KAWAMURA TATSURO , YAMASHITA TAKASHI , TAKETOSHI KAZUHISA , SHIDARA KEIICHI , ANDO FUMIHIKO , TANIOKA KENKICHI
IPC分类号： H01L27/146 , H01L31/0272 , H01L31/08 , H01L31/09 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14 , H01L31/02

13. 发明专利

DE3575044D1 未知
公开(公告)号：DE3575044D1
公开(公告)日：1990-02-01
申请号：DE3575044
申请日：1985-05-20
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KURIYAMA TAKAO , TAKASAKI YUKIO , HIRAI TADAAKI , NONAKA YASUHIKO , INOUE EISUKE
IPC分类号： H01J31/26 , H01J1/78 , H01J29/45 , H01J31/38 , H01L31/00 , H01L31/0248 , H01L31/08
摘要： A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF 3 , etc. exists is selected to be thinner (not smaller than 20 A and not larger than 90 A) than a value which has been adopted so far.

14. 发明专利

DE2527528A1 未知
公开(公告)号：DE2527528A1
公开(公告)日：1976-01-08
申请号：DE2527528
申请日：1975-06-20
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： NONAKA YASUHIKO , GOTO NAOHIRO , SHIDARA KEIICHI
IPC分类号： H01J29/45 , H01L31/08 , H01J31/38
摘要： In a method of manufacturing a target structure for use in a photoconductive image pickup tube when depositing a P-type photoconductive film on an N-type transparent conductive film deposited on one side of a transparent substrate which acts as an incident window of the image pickup tube, the P-type photoconductive film is made up of first and second photoconductive substances. The commencement of the deposition of the first photoconductive substance is delayed a predetermined time than that of the second photoconductive substance and the deposition of the first photoconductive substance is terminated before completion of the deposition of the second photoconductive material thereby forming a layer of the first photoconductive substance not contiguous to the junction between the N-type transparent conductive film and the P-type photoconductive film and having a predetermined thickness.

15. 发明专利

FR2458889A1 未知
公开(公告)号：FR2458889A1
公开(公告)日：1981-01-02
申请号：FR8012689
申请日：1980-06-06
申请人： JAPAN BROADCASTING CORP
发明人： SHIDARA KEIICHI , GOTO NAOHIRO , KAWAMURA TATSURO , HIRUMA EIKYU , IKEDA YOHITSUMI , NONAKA YASUHIKO , TANIOKA KENKICHI , HIRAI TADAAKI , TAKASAKI YUKIO , KUSANO CHUSHIROU , UDA ET TSUYOSHI
IPC分类号： H01J29/45 , H01L31/0264 , H01L31/0272 , H01L31/08

16. 发明授权

KR860000815B1 PHOTOCONDUCTIVE FILM 失效
公开(公告)号：KR860000815B1
公开(公告)日：1986-06-28
申请号：KR820002439
申请日：1982-05-28
申请人： HITACHI LTD
发明人： SHIDARA KEICHI , KUNIOKA KENKICHI , UCHIDA TERUO , KUSANO CHUSHIRO , TAKASAKI YUKIO , NONAKA YASUHIKO
IPC分类号： H01L31/0248 , H01J29/45 , H01L31/08
摘要： In order to reduce afterimage due to intensive light photoconductive film was made of amorphous material contg. selenium. The photoconductive layer consisted of mainly selenium and a little amount of tellurium along some part of the layer. At least one oxide or fluoride from II, III, VII gp. was arranged contiguously to tellurium along another width of the layer which could produce neg. elec. charge in selenium.

17. 发明专利

DE3768574D1 未知
公开(公告)号：DE3768574D1
公开(公告)日：1991-04-18
申请号：DE3768574
申请日：1987-07-08
申请人： HITACHI LTD
发明人： UNNAI TAKAAKI , NONAKA YASUHIKO , INOUE EISUKE
IPC分类号： H01J29/45 , H01L31/0224 , H01L31/0272 , H01L31/09 , H01L31/00 , H01L31/08

18. 发明专利

DE2443259A1 未知
公开(公告)号：DE2443259A1
公开(公告)日：1975-03-13
申请号：DE2443259
申请日：1974-09-10
申请人： HITACHI LTD
发明人： NONAKA YASUHIKO
IPC分类号： H01J9/20 , H01J9/233 , H01J29/45 , H01L21/06 , H01L21/203 , H01L31/08 , H01L31/18 , H04N5/30
摘要： In a method of manufacturing the target of a pickup tube of the class wherein an N-type light transmitting conductive film is formed on a substrate, an N-type photoconductive film consisting of a group II-VI compound is formed on the N-type light transmitting conductive film by means of a vacuum deposition device comprising a boat for containing the compound and a hollow shielding member, and then a P-type amorphous photoconductive film consisting essentially of metal selenium is applied onto the N-type photoconductive film. The temperature of the substrate is maintained in a range of from 50 DEG C to 250 DEG C when the N-type photoconductive film is formed on the N-type light transmitting conductive film. The distance between the boat and the substrate is maintained in a range of from 8 to 13 cm. The boat and the substrate are contained in the hollow shielding member thereby maintaining homogeneous atmosphere of the group II-IV compound about the boat and the substrate, and the boat is preheated to a predetermined temperature.

19. 发明专利

DE3466130D1 IMAGE PICKUP TUBE TARGET 未知
公开(公告)号：DE3466130D1
公开(公告)日：1987-10-15
申请号：DE3466130
申请日：1984-01-18
申请人： HITACHI LTD
发明人： INOUE EISUKE , NONAKA YASUHIKO , YAMAMOTO MASANAO
IPC分类号： H01J29/45

20. 发明专利

DE2828651A1 未知
公开(公告)号：DE2828651A1
公开(公告)日：1979-01-18
申请号：DE2828651
申请日：1978-06-29
申请人： HITACHI LTD
发明人： NONAKA YASUHIKO
IPC分类号： C23C14/54 , G05D5/03 , C23C13/08 , C23C15/00
摘要： A vacuum vapor-deposition apparatus comprising a turntable for holding some substrates subjected to vapor-deposition, on its circumferential portions; a plurality of evaporating boats disposed opposite to the circumferential portions of the turntable; a plurality of SCR boat power sources for respectively heating the plural evaporating boats; and at least one quartz deposition monitor provided on the turntable, wherein the turntable is rotated for vacuum vapor-deposition so that the evaporated materials from the respective boats are periodically deposited on some substrates to form the start of the successively evaporated materials. This apparatus also includes a coupling device having at least a coupling coil system consisting of a primary coil rotated in synchronism with the turntable and a secondary coil so disposed as to be set concentrically with respect to the primary coil, the coupling device serving to extract an electrical signal from the quartz deposition monitor, a digital frequency counter for directly measuring the natural resonance frequency of the quartz oscilator of the deposition monitor on the basis of the noiseless signal induced in the secondary coil of the coupling system and a computor, whereby it is rendered unnecessary to set the offset frequency of the deposition monitor with the quartz oscilator.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式