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11. 发明专利

JPH04353697A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04353697A
公开(公告)日：1992-12-08
申请号：JP12719791
申请日：1991-05-30
申请人： HITACHI LTD
发明人： UDAGAWA SATORU , YAMAGUCHI YASUNORI , KUMADA ATSUSHI
IPC分类号： G11C11/413 , G11C11/401
摘要： PURPOSE:To stabilize operation of a memory board mounting memory integrated circuits and enhance reliability thereof by suppressing power source noise induced on a power source voltage feeding line and balancing amount of superposed noise. CONSTITUTION:A power source voltage feeding terminal VCC for feeding a power source voltage to memory integrated circuits RAM11 to RAM48 and a power source voltage feeding terminal VCCB for feeding a power source voltage to a data output buffer are provided separately and a feeding line SVCA1 or SVCB1 for feeding a power source voltage to the terminal VCC and a feeding line SVCA2 or SVCB2 for feeding a power source voltage to the terminal VCCB are also provided separately. Moreover, the memory integrated circuits are divided into groups of a first and a second integrated circuit groups and connection between the power source voltage feeding lines SVCA1 and SVCA2 and the feeding lines SVCB1 and SVCB2 is crossed between these integrated circuit groups. Moreover, data output buffer is formed as a open drain type and an output terminal thereof is coupled with power source voltage for termination of the memory board MB1.

12. 发明专利

JPH04163785A SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPH04163785A
公开(公告)日：1992-06-09
申请号：JP29034990
申请日：1990-10-26
申请人： HITACHI LTD
发明人： KUMADA ATSUSHI , KAJITANI KAZUHIKO
IPC分类号： G11C11/407 , G11C11/401 , G11C29/00 , G11C29/06
摘要： PURPOSE:To shorten the time of a burn-in test by mounting a word-line selector circuit selecting a word line in a multiple manner on a specific operating mode. CONSTITUTION:A word line driver WD receives the decoding outputs x0, x1 of a first decoder circuit, an X address decoder XDCR as a second decoder and step-up voltage VCH, and a burn-in control signal bi and a word-line selective timing signal wph. One word line is brought to a selective state to a sense amplifier SA at a normal operating mode, and a plurality of word lines are brought to a selective state (a multiple selective state) to the sense amplifier SA in order to shorten the time of a burn-in test on the burn-in test. Accordingly, a stress duty at the time of a turn-in is improved by the multiple selection of the word lines, thus shortening a test time.

13. 发明专利

JPH01166398A SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPH01166398A
公开(公告)日：1989-06-30
申请号：JP32390887
申请日：1987-12-23
申请人： HITACHI LTD
发明人： KUMADA ATSUSHI , KAJITANI KAZUHIKO
IPC分类号： G11C29/00 , G11C11/34 , G11C11/401 , G11C11/413 , G11C29/42
摘要： PURPOSE:To contrive a high speed memory access by disposing address decoders for selective driving of word line in each memory mat and arranging them uniformly to either address input buffer or a data input/output circuit side. CONSTITUTION:Address decoders 21-24 for forming a word line selecting driving signal to select a memory cell, which is included in memory mats 11-14, are arranged in each memory mat 11-14 uniformly to either an address input buffer 16 side or a data input and output circuit 15 side. Accordingly, the selecting driving direction of the memory cell by the address decoders 21-24 is caused to be constant regardless of the position of the memory cell, and the increase and decrease of a load, with which the address decoders 21-24 and the data input/output circuit 15 are respectively driven, is canceled. Then, even when the position of the memory cell to be an access subject is changed, the fluctuation of the total load, with which the both circuits 16 and 15 are driven, is suppressed. Thus, the high speed memory access can be attained.

14. 发明专利

JPH01150300A SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPH01150300A
公开(公告)日：1989-06-13
申请号：JP30887487
申请日：1987-12-07
申请人： HITACHI LTD
发明人： KOTANI HIROAKI , KUMADA ATSUSHI
IPC分类号： G11C11/401 , G11C11/34 , G11C11/409 , G11C29/00 , G11C29/50
摘要： PURPOSE:To obtain sufficient detecting sensitivity by individually changing the power supply voltage of a sense amplifier circuit through an exclusive power supply pad and controlling the arrival level of a bit line. CONSTITUTION:The sense amplifier SA is constituted of arranging a p-channel type sense amplifier part SAp and an n-channel type sense amplifier SAn on both the sides of a pair of bit lines BL, the inverse of BL. The amplifier part SAn is connected to the exclusive power supply pad VS1 and the amplifier part SAp is connected to the pad VS2. The pads VS1, VS2 are pads to be exclusively used for sense amplifiers independent of a power supply pad, and at the time of inspecting a probe in a chip or pellet state before assembling or bonding, power supply voltage to be supplied to the amplifiers SA can be controlled through the pads VS1, VS2 independently of other peripheral circuits. Thus, sufficient detecting sensitivity can be obtained.

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