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    • 12. 发明专利
    • ALIGNMENT METHOD OF WAFER
    • JPH0547901A
    • 1993-02-26
    • JP22883491
    • 1991-08-14
    • HITACHI ELECTR ENG
    • JINGU TAKAHIRO
    • H01L21/66G01B11/00G05D3/12H01L21/68
    • PURPOSE:To provide a method wherein, in a foreign matter inspection equipment using a comparison method of adjacent chips, corresponding same patterns are correctly selected from the similar shape patterns of two symmetrical IC chips, X, Y coordinate values of high precision are obtained from image data whose pattern is indistinct, and high precision alignment of a wafer is enabled. CONSTITUTION:Image data of the same parts selected from patterns PTa, PTb of two IC chips are compared by a pattern matching unit 6f, and the identity is confirmed. Image data of perpendicularly intersecting parts of both of the confirmed same parts are processed by a filing unit 6g, and the respective contour curves S1, S2 are extracted. From these curves, the angle deviation of wafers are calculated, by obtaining X, Y coordinate (xa, ya), (xb, yb) of perpendicularly intersecting points Pa, Pb of both of the perpendiclarly intersecting parts. The wafer is rotated by the angle deviation amount, and IC chip rows in the X-direction are aligned in the X-axis direction.
    • 14. 发明专利
    • FOREIGN MATTER INSPECTING DEVICE FOR WAFER
    • JPH0545296A
    • 1993-02-23
    • JP22883591
    • 1991-08-14
    • HITACHI ELECTR ENG
    • JINGU TAKAHIRO
    • G01B11/30G01N21/88G01N21/94G01N21/956H01L21/66
    • PURPOSE:To make sensing of foreign matters over the whole surface of wafer by furnishing an edge foreign matter sensing means to sense foreign matters attached to the peripheral edges of a wafer and the inter-IC chip edge parts, producing a photo-receiving signal for the diffusive light at the edge parts, and sensing existence of foreign matters through comparison of the photo- receiving signal with the threshold. CONSTITUTION:When a wafer 1 is scanned with a laser beam Lx, a position signal exhibiting the X-Y coordinates for the scanning position is emitted and fed to a control signal generation part 5a, which issues control signals Cr, Ck. The control signal Cr corresponds to the coordinates Xs, Xt for intersections s, t of the laser beam Lx with the chip outsides at two ends while the control signal Ck corresponds the coordinates Xr, Xu for intersections r, u of the laser beam with the wafer periphery 1a. Threshold Ve and chip threshold Vth are stored in a threshold register. The differential data from a differential circuit 4c is subjected to comparison, and foreign matters in the chip are sensed. Thus, sensing of foreign matters over the whole wafer surface is made practicable by furnishing a simple foreign matter sensing means applicable to the edge parts as embodied in the structure as described above.
    • 17. 发明专利
    • METHOD FOR SETTING UP FOREIGN SUBSTANCE DETECTING THRESHOLD
    • JPH0546737A
    • 1993-02-26
    • JP22883291
    • 1991-08-14
    • HITACHI ELECTR ENG
    • JINGU TAKAHIRO
    • G01N21/88G01N21/94G01N21/956G03F1/84G06T1/00H01L21/027H01L21/66
    • PURPOSE:To rapidly find out a proper detection threshold for the difference data of adjacent chips by computer processing in a foreign substance inspecting device based upon an adjacent chip comparing method. CONSTITUTION:Optional adjacent chips are selected as test chips in each step of a chip process and scanned with laser beams and respective picture element signals g on the whole surface of each chip are respectively stored in corresponding areas 6a, 6b of a video RAM. Respective stored picture element signals are successively read out by the processing of a computer 4e, the difference data (Sa-Sb) of picture element signals corresponding to both chips is formed by a difference circuit 6c and respective picture element signals of the difference data are detected by a variable threshold vth obtained from a variable threshold circuit 6g and mapped on a CRT 6f. A threshold allowing an operator to observe only the image of a foreign substance p by erasing the image of a residual pattern R left in the difference data is found out by changing the variable threshold and set up in a foreign substance detecting part 4d as a proper detection threshold [Vth] for respective adjacent chips in the process step.