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    • 14. 发明申请
    • TEMPERATURE CONTROLLED ION SOURCE
    • 温度控制离子源
    • US20110240878A1
    • 2011-10-06
    • US12754381
    • 2010-04-05
    • Victor BenvenisteBon-Woong KooShardul PatelFrank Sinclair
    • Victor BenvenisteBon-Woong KooShardul PatelFrank Sinclair
    • H01J27/02H01J37/317
    • H01J37/3171H01J37/08H01J2237/002
    • An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.
    • 提供了一种离子源,其利用提供给腔室的相同掺杂剂气体来产生所需的工艺等离子体,以在高通量操作期间提供室壁的温度控制。 离子源包括具有限定内表面的壁的室。 衬套设置在腔室内并且具有至少一个孔口以将掺杂剂气体供应到腔室的内部。 在室壁的内表面的至少一部分和衬垫之间限定间隙。 第一管道被配置为向掺杂剂气体在间隙内具有流速的间隙提供掺杂剂气体。 第二导管构造成从间隙去除掺杂剂气体,其中间隙内的掺杂剂气体的流速用作传热介质以调节室内部的温度。