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    • 13. 发明授权
    • Method of fabricating a MEMS/NEMS electromechanical component
    • 制造MEMS / NEMS机电元件的方法
    • US07906439B2
    • 2011-03-15
    • US12488898
    • 2009-06-22
    • François PerruchotBernard DiemVincent LarreyLaurent ClavelierEmmanuel Defay
    • François PerruchotBernard DiemVincent LarreyLaurent ClavelierEmmanuel Defay
    • H01L21/302H01L21/461
    • B81C1/00507B81B2201/0271B81C2201/0115B81C2201/0136B81C2201/0177B81C2203/0136B81C2203/0145H03H3/0072H03H9/175H03H9/2436Y10S438/933
    • The invention provides a method of fabricating and electromechanical device having an active element on at least one substrate, the method having the steps of: a) making a heterogeneous substrate having a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between said cavity and said interface layer; wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.
    • 本发明提供一种在至少一个基板上具有有源元件的制造方法和机电装置,该方法具有以下步骤:a)制造具有第一部分,界面层和第二部分的非均相基底,第一部分 包括夹在形成于第一单晶材料中的第一和第二区域之间的一个或多个掩埋区域,第一区域延伸到第一部分的表面,第二区域延伸到界面层,至少一个所述掩埋区域 至少部分地由第二单晶材料制成,以使其相对于第一和第二区域选择性地具有攻击性; b)从所述第一部分的表面和所述第一区域制造开口,所述第一区域开放到至少一个所述掩埋区域; 以及c)蚀刻至少一个掩埋区域的至少一部分以形成至少一个空腔,以便限定至少一个有源元件,所述至少一个有源元件是所述腔和所述界面层之间的第二区域的至少一部分; 其中所述基板的第一和第二部分分别由通过粘接而组装在一起的第一和第二基板构成,其中至少一个在其表面的至少一部分上包括至少一个所述界面层。
    • 17. 发明申请
    • HIGH-STABILITY THIN-FILM CAPACITOR AND METHOD FOR MAKING THE SAME
    • 高稳定性薄膜电容器及其制造方法
    • US20100002358A1
    • 2010-01-07
    • US12311529
    • 2007-10-16
    • Emmanuel DefayJulie GuillanSerge Blonkowski
    • Emmanuel DefayJulie GuillanSerge Blonkowski
    • H01G4/00B05D5/12G01R27/26
    • H01G4/1218H01G4/1254H01G4/33H01L27/016H01L28/40H01L28/56
    • The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses da and dc of the amorphous and crystalline thin layers comply with the following general formulas: d a = ɛ 0  ɛ a C s   0  ( 1 1 - ( ɛ c ɛ a ) 2  γ a γ c )   and   d c = ɛ 0  ɛ c C s   0  ( 1 1 - ( ɛ a ɛ c ) 2  γ c γ a ) in which ε0 corresponds to the electric constant, εc and εa correspond to the relative permittivity of the metal oxide respectively in crystalline form and in amorphous form, Cs0 corresponds to the total surface capacitance at zero field, and γc and γa correspond to the quadratic coefficient of capacitance with respect to the electric field of the metal oxide respectively in crystalline form and in amorphous form.
    • 电容器的电介质通过分别由相同金属氧化物制成的至少两个薄层分别以结晶和非晶形式叠加并且分别呈现相反符号的电容的二次电压系数而形成。 无定形和结晶薄层的各自的厚度da和dc符合以下通式:da =εεεa C s(0)(1 1 - (εcεa)2γ伽马c) 其中epsilon对应于电常数,epsilon和epsilona对应于 金属氧化物的结晶形式和无定形形式的相对介电常数Cs0对应于零场的总表面电容,并且gammac和γa分别对应于分别在金属氧化物中的金属氧化物的电场的二次系数 形式和非晶形式。
    • 20. 发明授权
    • High-stability thin-film capacitor and method for making the same
    • 高稳定性薄膜电容器及其制造方法
    • US08169771B2
    • 2012-05-01
    • US12311529
    • 2007-10-16
    • Emmanuel DefayJulie GuillanSerge Blonkowski
    • Emmanuel DefayJulie GuillanSerge Blonkowski
    • H01G4/06H01G4/10
    • H01G4/1218H01G4/1254H01G4/33H01L27/016H01L28/40H01L28/56
    • The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses da and dc of the amorphous and crystalline thin layers comply with the following general formulas: d a = ɛ 0 ⁢ ɛ a C s ⁢ ⁢ 0 ⁢ ( 1 1 - ( ɛ c ɛ a ) 2 ⁢ γ a γ c ) ⁢ ⁢ and ⁢ ⁢ d c = ɛ 0 ⁢ ɛ c C s ⁢ ⁢ 0 ⁢ ( 1 1 - ( ɛ a ɛ c ) 2 ⁢ γ c γ a ) in which ∈0 corresponds to the electric constant, ∈c and ∈a correspond to the relative permittivity of the metal oxide respectively in crystalline form and in amorphous form, Cs0 corresponds to the total surface capacitance at zero field, and γc and γa correspond to the quadratic coefficient of capacitance with respect to the electric field of the metal oxide respectively in crystalline form and in amorphous form.
    • 电容器的电介质通过分别由相同金属氧化物制成的至少两个薄层分别以结晶和非晶形式叠加并且分别呈现相反符号的电容的二次电压系数而形成。 无定型和结晶薄层的各自的厚度da和dc符合以下通式:da =εεεC s⁢0(1 1 - (εcεa)2γaγc) ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⁢⁢⁢⁢⁢⁢⁢⁢aɛɛɛɛɛɛɛɛɛɛ∈∈∈∈∈∈∈∈∈∈∈∈∈∈ 分别对应于金属氧化物的结晶形式和非晶形式的相对介电常数,Cs0对应于零场的总表面电容,γc和γa对应于相对于金属氧化物电场的电容的二次系数 分别为结晶形式和无定形形式。