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11. 发明申请

US20120261732A1 METHOD FOR FORMING A BACK-SIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：形成背面照明图像传感器的方法
公开(公告)号：US20120261732A1
公开(公告)日：2012-10-18
申请号：US13445013
申请日：2012-04-12
申请人： Michel Marty , François Roy , Jens Prima
发明人： Michel Marty , François Roy , Jens Prima
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14687
摘要： A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.
摘要翻译：一种用于从半导体衬底形成背面照明图像传感器的方法，包括以下步骤：a）从其后表面减薄衬底; b）在薄化衬底的后表面上沉积与衬底相同导电类型但具有较高掺杂水平的非晶硅层; 和c）在能够使非晶硅重结晶以使其稳定的温度下进行退火。

12. 发明授权

US08193479B2 Very small image sensor 有权
标题翻译：非常小的图像传感器
公开(公告)号：US08193479B2
公开(公告)日：2012-06-05
申请号：US12429413
申请日：2009-04-24
申请人： François Roy , Benoît Ramadout
发明人： François Roy , Benoît Ramadout
IPC分类号： H01L27/00 , H01L31/101
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/14641 , H01L27/14643
摘要： An image sensor formed in a semiconductor stack of a lower region of a first conductivity type and of an upper region of a second conductivity type, including: a photodiode formed of a first portion of the stack; a read area formed of a second portion of the stack; a trench with insulated walls filled with a conductive material, the trench surrounding the photodiode and the read area and being interrupted, all along its height, on a portion facing the photodiode and the read area; and first connection mechanism associated with the conductive material of the trench and capable of being connected to a reference bias voltage.
摘要翻译：一种形成在第一导电类型的下区域和第二导电类型的上区域的半导体堆叠中的图像传感器，包括：由所述堆叠的第一部分形成的光电二极管; 由堆叠的第二部分形成的读取区域; 具有填充有导电材料的绝缘壁的沟槽，围绕光电二极管和读取区域的沟槽，并且全部沿其高度中断面对光电二极管和读取区域的部分; 以及与沟槽的导电材料相关联并且能够连接到参考偏置电压的第一连接机构。

13. 发明授权

US08030774B2 Imaging device equipped with a last copper and aluminum based interconnection level 有权
标题翻译：成像设备配备了最后一个基于铜和铝的互连级别
公开(公告)号：US08030774B2
公开(公告)日：2011-10-04
申请号：US11961202
申请日：2007-12-20
申请人： François Roy
发明人： François Roy
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L23/53223 , H01L23/53238 , H01L24/05 , H01L27/14636 , H01L27/14643 , H01L2224/02166 , H01L2224/05624 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01058 , H01L2924/01074 , H01L2924/01082 , H01L2924/05042 , H01L2924/12043 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A microelectronic device may include a substrate, a plurality of components on the substrate, an insulating layer adjacent the substrate, and a plurality of metallic interconnection levels within the insulating layer and for the plurality of components. The plurality of metallic interconnection levels may include at least one given metallic level including a plurality of conductive lines of a first metallic material, and at least one other metallic level adjacent the at least one given metallic level. The at least one other metallic level may include at least one conductive zone of the first metallic material and coupled to at least one of the plurality of conductive lines of the at least one given metallic level, and at least one other conductive zone of a second metallic material and coupled to at least one other of the plurality of conductive lines of the at least one given metallic level.
摘要翻译：微电子器件可以包括衬底，衬底上的多个部件，与衬底相邻的绝缘层，以及绝缘层和多个部件内的多个金属互连级别。多个金属互连级别可以包括至少一个给定的金属级，包括第一金属材料的多条导电线，以及与至少一个给定金属层相邻的至少一个其它金属级。所述至少一个其它金属层可以包括所述第一金属材料的至少一个导电区并且耦合到所述至少一个给定金属水平的所述多个导电线中的至少一个，以及第二金属层的至少一个其它导电区金属材料并且耦合到至少一个给定金属水平的多个导电线中的至少另一个。

14. 发明申请

US20100182474A1 IMAGE CAPTURE DEVICE COMPRISING PIXEL COMBINATION MEANS 审中-公开
标题翻译：包含像素组合装置的图像捕获装置
公开(公告)号：US20100182474A1
公开(公告)日：2010-07-22
申请号：US12690730
申请日：2010-01-20
申请人： Hervé Mingam , François Roy
发明人： Hervé Mingam , François Roy
IPC分类号： H04N5/335
CPC分类号： H04N5/37457 , H04N5/2254 , H04N5/347 , H04N9/045
摘要： An image capture device includes n image sensors arranged to capture images respectively of a same scene according to at least three different colors, each of the sensors comprising a pixel array, each pixel being associated with a MOS transfer transistor, the transfer transistors of n neighboring pixels being associated with a same output; and a read circuit associated with control circuitry for reading separately, the output of each transfer transistor, or cumulatively, the outputs of from two to n neighboring transfer transistors.
摘要翻译：图像捕获装置包括n个图像传感器，其被布置为根据至少三种不同的颜色分别捕获相同场景的图像，每个传感器包括像素阵列，每个像素与MOS传输晶体管相关联，n个相邻的传输晶体管像素与相同的输出相关联; 以及与控制电路相关联的读取电路，用于单独读取每个传输晶体管的输出，或者累加地从两个相邻的传输晶体管的输出。

15. 发明授权

US07279729B2 Photodetector array 有权
标题翻译：光电检测器阵列
公开(公告)号：US07279729B2
公开(公告)日：2007-10-09
申请号：US10849094
申请日：2004-05-19
申请人： François Roy
发明人： François Roy
IPC分类号： H01L31/113
CPC分类号： H01L27/14603 , H01L27/14632 , H01L27/14636
摘要： A photodetector array made in monolithic form, in which transistors are formed in a semiconductor substrate coated with several metallization levels and photodiodes are formed above a last metallization level, each photodiode having an upper region of a first conductivity type common to all photodiodes and an individual lower region forming a junction with the upper region in contact with a metallization of the last level, wherein each lower region is separated from the neighboring lower regions by an insulating material and is connected to the metallization through a via formed in at least one insulating layer.
摘要翻译：在最后的金属化水平上形成以单体形式制成的光电检测器阵列，其中晶体管形成在涂覆有若干金属化水平的半导体衬底和光电二极管中，每个光电二极管具有所有光电二极管共同的第一导电类型的上部区域和个体下部区域与上部区域形成与最后一层的金属化接触的结，其中每个下部区域通过绝缘材料与相邻的下部区域分离，并且通过在至少一个绝缘层中形成的通孔连接到金属化层。

16. 发明授权

US08735208B2 Method for forming a back-side illuminated image sensor 有权
标题翻译：用于形成背面照明图像传感器的方法
公开(公告)号：US08735208B2
公开(公告)日：2014-05-27
申请号：US13445265
申请日：2012-04-12
申请人： François Roy , Michel Marty
发明人： François Roy , Michel Marty
IPC分类号： H01L31/18
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) forming, from the front surface of the substrate, areas of same conductivity type as the substrate but of higher doping level, extending deep under the front surface, these areas being bordered with insulating regions orthogonal to the front surface; b) thinning the substrate from the rear surface to the vicinity of these areas and all the way to the insulating regions; c) partially hollowing out the insulating regions on the rear to surface side; and d) performing a laser surface anneal of the rear surface of the substrate.
摘要翻译：一种用于从半导体衬底形成背面照明图像传感器的方法，包括以下步骤：a）从衬底的前表面形成与衬底相同的导电类型但具有较高掺杂水平的区域，前表面，这些区域与正面与前表面正交的绝缘区域相邻; b）使衬底从后表面到这些区域的附近变薄并且一直到绝缘区域; c）部分地挖空后表面侧的绝缘区域; 以及d）对所述基板的后表面执行激光表面退火。

17. 发明授权

US08659109B2 Image sensor photodiode 有权
标题翻译：图像传感器光电二极管
公开(公告)号：US08659109B2
公开(公告)日：2014-02-25
申请号：US12984067
申请日：2011-01-04
申请人： François Roy
发明人： François Roy
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L29/762
摘要： An image sensor including a plurality of pixels each including a charge collection region including an N-type region bounded by P-type regions and having an overlying P-type layer; and an insulated gate electrode positioned over the P-type layer and arranged to receive a gate voltage for conveying charges stored in the charge collection region through the P-type layer.
摘要翻译：一种图像传感器，包括多个像素，每个像素包括包含由P型区域限定并具有上覆P型层的N型区域的电荷收集区域; 以及绝缘栅电极，其位于所述P型层上并被布置成接收用于通过所述P型层传送存储在所述电荷收集区域中的电荷的栅极电压。

18. 发明授权

US08531567B2 Image sensor with vertical transfer gate 有权
标题翻译：具有垂直传输门的图像传感器
公开(公告)号：US08531567B2
公开(公告)日：2013-09-10
申请号：US12910176
申请日：2010-10-22
申请人： François Roy , Frédéric Barbier
发明人： François Roy , Frédéric Barbier
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14641 , H01L27/14683
摘要： An image sensor including a first pixel positioned between second and third pixels, each of the first, second and third pixels comprising a photodiode region surrounded by an isolation trench; a first charge transfer gate comprising a first column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and second pixels, the first column electrode being configured to receive a first transfer voltage signal; and a second charge transfer gate including a second column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and third pixels, the second column electrode being configured to receive a second transfer voltage signal.
摘要翻译：一种图像传感器，包括位于第二和第三像素之间的第一像素，第一，第二和第三像素中的每一个包括由隔离沟槽包围的光电二极管区域; 第一电荷传输门，包括由绝缘层包围并位于第一和第二像素之间的隔离沟槽的开口中的第一列电极，第一列电极被配置为接收第一转印电压信号; 以及第二电荷转移栅极，包括由绝缘层包围并位于第一和第三像素之间的隔离沟槽的开口中的第二列电极，第二列电极被配置为接收第二转印电压信号。

19. 发明申请

US20120261784A1 METHOD FOR FORMING A BACK-SIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：形成背面照明图像传感器的方法
公开(公告)号：US20120261784A1
公开(公告)日：2012-10-18
申请号：US13445265
申请日：2012-04-12
申请人： François Roy , Michel Marty
发明人： François Roy , Michel Marty
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) forming, from the front surface of the substrate, areas of same conductivity type as the substrate but of higher doping level, extending deep under the front surface, these areas being bordered with insulating regions orthogonal to the front surface; b) thinning the substrate from the rear surface to the vicinity of these areas and all the way to the insulating regions; c) partially hollowing out the insulating regions on the rear to surface side; and d) performing a laser surface anneal of the rear surface of the substrate.
摘要翻译：一种用于从半导体衬底形成背面照明图像传感器的方法，包括以下步骤：a）从衬底的前表面形成与衬底相同的导电类型但具有较高掺杂水平的区域，前表面，这些区域与正面与前表面正交的绝缘区域相邻; b）使衬底从后表面到这些区域的附近变薄并且一直到绝缘区域; c）部分地挖空后表面侧的绝缘区域; 以及d）对所述基板的后表面执行激光表面退火。

20. 发明申请

US20110183709A1 IMAGE SENSOR PHOTODIODE 有权
标题翻译：图像传感器光电二极管
公开(公告)号：US20110183709A1
公开(公告)日：2011-07-28
申请号：US12984067
申请日：2011-01-04
申请人： François Roy
发明人： François Roy
IPC分类号： H04M1/00 , H01L31/113 , H01L31/18
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L29/762
摘要： An image sensor including a plurality of pixels each including a charge collection region including an N-type region bounded by P-type regions and having an overlying P-type layer; and an insulated gate electrode positioned over the P-type layer and arranged to receive a gate voltage for conveying charges stored in the charge collection region through the P-type layer.
摘要翻译：一种图像传感器，包括多个像素，每个像素包括包含由P型区域限定并具有上覆P型层的N型区域的电荷收集区域; 以及绝缘栅电极，其位于所述P型层上并被布置成接收用于通过所述P型层传送存储在所述电荷收集区域中的电荷的栅极电压。

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