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11. 发明授权

US07902556B2 Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates 有权
标题翻译：在硅衬底上制造高品质半导体发光器件的方法
公开(公告)号：US07902556B2
公开(公告)日：2011-03-08
申请号：US12067690
申请日：2006-11-17
申请人： Fengyi Jiang , Bilin Shao , Li Wang , Wenqing Fang
发明人： Fengyi Jiang , Bilin Shao , Li Wang , Wenqing Fang
IPC分类号： H01L33/00
CPC分类号： H01L33/0066 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02472 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L33/0087 , H01L33/12
摘要： One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure.
摘要翻译：本发明的一个实施例提供一种半导体发光器件，其包括：（1）硅（Si）衬底; （2）形成在Si衬底的表面上的银（Ag）过渡层，其中Ag过渡层覆盖Si衬底表面; 和（3）在Ag涂覆的Si衬底上制造的InGaAlN，ZnMgCdO或ZnBeCdO基半导体发光结构。注意，Ag过渡层防止Si衬底表面与用于生长半导体发光结构的反应气体形成无定形外涂层。

12. 发明申请

US20100219394A1 METHOD FOR FABRICATING A LOW-RESISTIVITY OHMIC CONTACT TO A P-TYPE III-V NITRIDE SEMICONDUCTOR MATERIAL AT LOW TEMPERATURE 有权
标题翻译：在低温下制造P型III-V型氮化物半导体材料的低电阻OHMIC接触方法
公开(公告)号：US20100219394A1
公开(公告)日：2010-09-02
申请号：US12159835
申请日：2007-08-31
申请人： Fengyi Jiang , Li Wang , Wenqing Fang , Chunlan Mo
发明人： Fengyi Jiang , Li Wang , Wenqing Fang , Chunlan Mo
IPC分类号： H01L33/06 , H01L33/30
CPC分类号： H01L33/0095 , H01L33/32 , H01L33/40
摘要： One embodiment of the present invention provides a method for fabricating a group III-V nitride structure with an ohmic-contact layer. The method involves fabricating a group III-V nitride structure with a p-type layer. The method further involves depositing an ohmic-contact layer on the p-type layer without first annealing the p-type layer. The method also involves subsequently annealing the p-type layer and the ohmic-contact layer in an annealing chamber at a predetermined temperature for a predetermined period of time, thereby reducing the resistivity of the p-type layer and the ohmic contact in a single annealing process.
摘要翻译：本发明的一个实施例提供了一种用欧姆接触层制造III-V族氮化物结构的方法。该方法包括用p型层制造III-V族氮化物结构。该方法还包括在p型层上沉积欧姆接触层，而不首先退火p型层。该方法还包括随后在预定温度下在退火室中退火预定时间段内的p型层和欧姆接触层，从而降低单一退火中p型层的电阻率和欧姆接触处理。

13. 发明申请

US20080224154A1 Semiconductor Light-Emitting Device With Metal Support Substrate 有权
标题翻译：具有金属支撑基板的半导体发光器件
公开(公告)号：US20080224154A1
公开(公告)日：2008-09-18
申请号：US12063989
申请日：2006-10-26
申请人： Fengyi Jiang , Chuanbing Xiong , Wenqing Fang , Li Wang
发明人： Fengyi Jiang , Chuanbing Xiong , Wenqing Fang , Li Wang
IPC分类号： H01L33/00 , H01L21/36 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/40 , H01L33/641
摘要： One embodiment of the present invention provides a semiconductor light-emitting device which includes a multi-layer structure. The multilayer structure comprises a first doped layer, an active layer, and a second doped layer. The semiconductor light-emitting device further includes a first Ohmic-contact layer configured to form a conductive path to the first doped layer, a second Ohmic-contact layer configured to form a conductive path to the second doped layer, and a support substrate comprising not less than 15% chromium (Cr) measured in weight percentage.
摘要翻译：本发明的一个实施例提供一种包括多层结构的半导体发光器件。多层结构包括第一掺杂层，有源层和第二掺杂层。所述半导体发光器件还包括配置成形成到所述第一掺杂层的导电路径的第一欧姆接触层，被配置为形成到所述第二掺杂层的导电路径的第二欧姆接触层，以及不包括小于15％的铬（Cr）以重量百分比测量。

14. 发明授权

US08461029B2 Method for fabricating InGaN-based multi-quantum well layers 有权
标题翻译：制造基于InGaN的多量子阱层的方法
公开(公告)号：US08461029B2
公开(公告)日：2013-06-11
申请号：US13566616
申请日：2012-08-03
申请人： Fengyi Jiang , Li Wang , Chunlan Mo , Wenqing Fang
发明人： Fengyi Jiang , Li Wang , Chunlan Mo , Wenqing Fang
IPC分类号： H01L21/0254
CPC分类号： H01L21/0262 , H01L21/0254 , H01L33/007 , H01L33/06
摘要： A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas.
摘要翻译：通过使用氮化铟镓（InGaN）半导体材料制造量子阱的方法包括在反应器室中的第一预定温度下在层状III-V族氮化物结构上制造势阱，通过将反应器中的In前体气体和一种Ga前体气体。该方法还包括在制造势阱之后，终止Ga前体气体，保持In前体气体的流动，并将反应器室中的温度升高到第二预定温度，同时调节In前体气体流速从第一流量到第二流量。此外，该方法包括在维持第二流量的同时在第二预定温度下退火和稳定势阱。该方法还包括在恢复Ga前体气体的同时在第二预定温度下制造位于势阱上方的势垒。

15. 发明授权

US08383438B2 Method for fabricating InGaAIN light-emitting diodes with a metal substrate 有权
标题翻译：制造具有金属基板的InGaAIN发光二极管的方法
公开(公告)号：US08383438B2
公开(公告)日：2013-02-26
申请号：US13059140
申请日：2008-08-19
申请人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Wenqing Fang , Guping Wang , Shaohua Zhang
发明人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Wenqing Fang , Guping Wang , Shaohua Zhang
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/382 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration.
摘要翻译：本发明的一个实施例提供一种制造发光二极管的方法。该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。该方法还包括在每个台面上制造包含p型层，多量子阱层和n型层的铟镓铝氮化物（InGaAlN）层叠结构。此外，该方法包括在InGaAlN多层结构的顶部上沉积一个或多个金属衬底层。此外，该方法包括去除生长衬底。此外，该方法包括在InGaAlN多层结构的两侧形成电极，从而形成垂直电极结构。

16. 发明申请

US20120295422A1 METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS 有权
标题翻译：用于制造基于InGaN的多量子薄膜层的方法
公开(公告)号：US20120295422A1
公开(公告)日：2012-11-22
申请号：US13566616
申请日：2012-08-03
申请人： Fengyi Jiang , Li Wang , Chunlan Mo , Wenqing Fang
发明人： Fengyi Jiang , Li Wang , Chunlan Mo , Wenqing Fang
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , H01L21/0254 , H01L33/007 , H01L33/06
摘要： A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas.
摘要翻译：通过使用氮化铟镓（InGaN）半导体材料制造量子阱的方法包括在反应器室中的第一预定温度下在层状III-V族氮化物结构上制造势阱，通过将反应器中的In前体气体和一种Ga前体气体。该方法还包括在制造势阱之后，终止Ga前体气体，保持In前体气体的流动，并将反应器室中的温度升高到第二预定温度，同时调节In前体气体流速从第一流量到第二流量。此外，该方法包括在维持第二流量的同时在第二预定温度下退火和稳定势阱。该方法还包括在恢复Ga前体气体的同时在第二预定温度下制造位于势阱上方的势垒。

17. 发明授权

US07705348B2 Semiconductor light-emitting device with electrode for N-polar InGaAIN surface 有权
标题翻译：具有用于N极InGaAIN表面的电极的半导体发光器件
公开(公告)号：US07705348B2
公开(公告)日：2010-04-27
申请号：US12063974
申请日：2006-10-26
申请人： Li Wang , Fengyi Jiang , Maoxing Zhou , Wenqing Fang
发明人： Li Wang , Fengyi Jiang , Maoxing Zhou , Wenqing Fang
IPC分类号： H01L29/40
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： One embodiment of the present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a p-type doped InGaAIN layer, an n-type doped InGaAIN layer, and an active layer situated between the p-type doped and n-type doped InGaAIN layers. The semiconductor light-emitting device further includes an n-side Ohmic-contact layer coupled to an N-polar surface of the n-type doped InGaAIN layer. The Ohmic-contact layer comprises at least one of Au, Ni, and Pt, and at least one of group IV elements.
摘要翻译：本发明的一个实施例提供一种半导体发光器件。半导体发光器件包括衬底，p型掺杂的InGaInIn层，n型掺杂的InGaInIn层以及位于p型掺杂和n型掺杂的InGaain层之间的有源层。半导体发光器件还包括与n型掺杂的InGaain层的N极表面耦合的n侧欧姆接触层。欧姆接触层包括Au，Ni和Pt中的至少一种以及IV族元素中的至少一种元素。

18. 发明申请

US20080315212A1 METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE 有权
标题翻译：制造P型半导体结构的方法
公开(公告)号：US20080315212A1
公开(公告)日：2008-12-25
申请号：US11841116
申请日：2007-08-20
申请人： Fengyi Jiang , Li Wang , Wenqing Fang , Chunlan Mo
发明人： Fengyi Jiang , Li Wang , Wenqing Fang , Chunlan Mo
IPC分类号： H01L33/00 , H01L31/12
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/325
摘要： One embodiment of the present invention provides a method for fabricating a group III-V p-type nitride structure. The method comprises growing a first layer of p-type group III-V material with a first acceptor density in a first growing environment. The method further comprises growing a second layer of p-type group III-V material, which is thicker than the first layer and which has a second acceptor density, on top of the first layer in a second growing environment. In addition, the method comprises growing a third layer of p-type group III-V material, which is thinner than the second layer and which has a third acceptor density, on top of the second layer in a third growing environment.
摘要翻译：本发明的一个实施例提供一种制造III-V族p型氮化物结构的方法。该方法包括在第一生长环境中生长具有第一受体密度的第一层p型III-V族材料。该方法还包括在第二生长环境中在第一层的顶部上生长第二层p型III-V族材料，该第二层厚度比第一层厚，并具有第二受体密度。此外，该方法包括在第三生长环境中，在第二层的顶部上生长比第二层薄且具有第三受体密度的第三层p型III-V族材料。

19. 发明申请

US20080246048A1 Semiconductor Light-Emitting Device 有权
标题翻译：半导体发光器件
公开(公告)号：US20080246048A1
公开(公告)日：2008-10-09
申请号：US12067767
申请日：2006-09-29
申请人： Li Wang , Fengyi Jiang , Wenqing Fang
发明人： Li Wang , Fengyi Jiang , Wenqing Fang
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L24/05 , H01L33/20 , H01L33/32 , H01L33/62 , H01L51/0072 , H01L51/0085 , H01L51/0088 , H01L51/0094 , H01L51/5012 , H01L2224/04042 , H01L2224/05 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/00
摘要： A semiconductor light-emitting device, the device includes a substrate, a semiconductor stacked layer, a lead electrode and a lead, wherein the semiconductor stacked layer at least includes a N-type layer and a P-type layer, at least one of the N-type layer and the P-type layer has an opening, the opening is just beneath the lead; or includes a conductive substrate having a main surface and a back surface, an adhesive metal layer, a reflective/ohmic metal layer, a semiconductor stacked layer, a lead electrode and a lead sequentially deposited on the main surface of the substrate, the reflective/ohmic metal layer has an opening, the opening is just beneath the lead.
摘要翻译：一种半导体发光器件，该器件包括衬底，半导体堆叠层，引线电极和引线，其中半导体层叠层至少包括N型层和P型层，至少一个 N型层和P型层有开口，开口正好位于引线下方; 或者包括依次沉积在基板的主表面上的具有主表面和背表面的导电基板，粘合金属层，反射/欧姆金属层，半导体堆叠层，引线电极和引线，反射/ 欧姆金属层具有开口，开口正好位于引线下方。

20. 发明申请

US20080230799A1 Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface 有权
标题翻译：具有用于N极极大表面的电极的半导体发光器件
公开(公告)号：US20080230799A1
公开(公告)日：2008-09-25
申请号：US12063974
申请日：2006-10-26
申请人： Li Wang , Fengyi Jiang , Maoxing Zhou , Wenqing Fang
发明人： Li Wang , Fengyi Jiang , Maoxing Zhou , Wenqing Fang
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： One embodiment of the present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a p-type doped InGaAIN layer, an n-type doped InGaAIN layer, and an active layer situated between the p-type doped and n-type doped InGaAIN layers. The semiconductor light-emitting device further includes an n-side Ohmic-contact layer coupled to an N-polar surface of the n-type doped InGaAIN layer. The Ohmic-contact layer comprises at least one of Au, Ni, and Pt, and at least one of group IV elements.
摘要翻译：本发明的一个实施例提供一种半导体发光器件。半导体发光器件包括衬底，p型掺杂的InGaInIn层，n型掺杂的InGaInIn层以及位于p型掺杂和n型掺杂的InGaain层之间的有源层。半导体发光器件还包括与n型掺杂的InGaain层的N极表面耦合的n侧欧姆接触层。欧姆接触层包括Au，Ni和Pt中的至少一种以及IV族元素中的至少一种。

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