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11. 发明专利

JP2009130176A Phase-change nonvolatile memory, its manufacturing method, and semiconductor device 有权
标题翻译：相变非易失性存储器及其制造方法和半导体器件
公开(公告)号：JP2009130176A
公开(公告)日：2009-06-11
申请号：JP2007304332
申请日：2007-11-26
申请人： Elpida Memory Inc , エルピーダメモリ株式会社
发明人： KAKEGAWA TOMOYASU
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： PROBLEM TO BE SOLVED: To provide a phase-change nonvolatile memory (PRAM) with reduced I
reset .
SOLUTION: The phase-change nonvolatile memory 70 includes a lower electrode 2, a first interlayer insulating film 3 having a first hole part 4, a second interlayer insulating film 8 having a second hole part 9, a phase-change recording layer 10, and an upper electrode 11. A heating spot surface 15a is formed on a surface in contact with an impurity diffused layer 7 and the phase-change recording layer 10. The impurity diffused layer 7 includes two semiconductor layers of different conductivity types. The one semiconductor layer 5 includes a base part 51, and a projection part 52 projecting from the base part 51 and contacting with the phase-change recording layer 10. The projection part 52 includes the heating spot surface 15a. The other semiconductor layer 6 is formed so as to surround the projection part 52, and a depletion layer 21 is formed in a periphery of a junction surface. Thereby, the phase-change nonvolatile memory 70, in which a diameter of the heating spot surface 15a can be reduced, can be used to solve a problem.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有降低的I 复位的相变非易失性存储器（PRAM）。解决方案：相变非易失存储器70包括下电极2，具有第一孔部分4的第一层间绝缘膜3，具有第二孔部分9的第二层间绝缘膜8，相变记录层 10和上电极11.加热点表面15a形成在与杂质扩散层7和相变记录层10接触的表面上。杂质扩散层7包括两种不同导电类型的半导体层。一个半导体层5包括基部51和从基部51突出并与相变记录层10接触的突起部52.突出部52包括加热点表面15a。形成另一个半导体层6以包围突出部分52，并且在连接表面的周围形成耗尽层21。由此，可以使用其中可以减小加热点表面15a的直径的相变非易失性存储器70来解决问题。版权所有（C）2009，JPO＆INPIT

12. 发明专利

JP2009032805A Phase change non-volatile memory and semiconductor device 有权
标题翻译：相变非易失性存储器和半导体器件
公开(公告)号：JP2009032805A
公开(公告)日：2009-02-12
申请号：JP2007193560
申请日：2007-07-25
申请人： Elpida Memory Inc , エルピーダメモリ株式会社
发明人： KAKEGAWA TOMOYASU
IPC分类号： H01L27/105 , H01L21/8246 , H01L27/112 , H01L45/00
CPC分类号： H01L45/126 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/16
摘要： PROBLEM TO BE SOLVED: To provide a phase change non-volatile memory capable of reducing Ireset, exceeding the process limit. SOLUTION: The phase change non-volatile memory is provided with a lower electrode 11, an inter-layer insulating layer 12 formed on the lower electrode 11, an impurity diffused layer 14 embedded in a hole part 13 passing through the inter-layer insulating layer 12, a phase change recording layer 15 formed on the inter-layer insulating layer 12, an upper electrode 16 formed on the phase change recording layer 15, a side gate electrode 24 arranged on the side face of the hole part 13, in which the impurity diffused layer 14 is embedded, and a side gate insulating film 25, arranged between the side gate electrode 24 and the impurity diffused layer 14, and the side gate electrode 24 impresses electric field on the impurity diffused layer 14 via the side gate insulating film 25. Thus, the impurity diffusion layer 14 embedded in the hole part 13 is made into a depletion layer and the effective diameter ϕ of the impurity diffused layer 14 is made smaller than the diameter of the hole part 13. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够减少Ireset的相位变化非易失性存储器，超过处理限制。相变非易失性存储器设置有下部电极11，形成在下部电极11上的层间绝缘层12，嵌入在贯穿层间绝缘层13的孔部13中的杂质扩散层14。层间绝缘层12，形成在层间绝缘层12上的相变记录层15，形成在相变记录层15上的上电极16，配置在孔部13的侧面的侧栅电极24，其中嵌入有杂质扩散层14，并且布置在侧栅电极24和杂质扩散层14之间的侧栅极绝缘膜25和侧栅电极24通过侧面对杂质扩散层14施加电场因此，嵌入孔部13中的杂质扩散层14成为耗尽层，使杂质扩散层14的有效直径φ小于孔部13的直径 13.版权所有（C）2009，JPO＆INPIT

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