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11. 发明申请

US20070264588A1 IMPRINT LITHOGRAPHY SYSTEM TO PRODUCE LIGHT TO IMPINGE UPON AND POLYMERIZE A LIQUID IN SUPERIMPOSITION WITH TEMPLATE OVERLAY MARKS 有权
标题翻译：印刷光刻系统，用于生产光以引入和聚合液体在超模中与模板覆盖标记
公开(公告)号：US20070264588A1
公开(公告)日：2007-11-15
申请号：US10864214
申请日：2004-06-09
申请人： Sidlgata Sreenivasan , Byung-Jin Choi , Matthew Colburn , Todd Bailey
发明人： Sidlgata Sreenivasan , Byung-Jin Choi , Matthew Colburn , Todd Bailey
IPC分类号： G03C5/00 , B29C35/08
CPC分类号： B29C35/0888 , B29C37/0053 , B29C43/003 , B29C43/021 , B29C2035/0827 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00 , Y10S101/36 , Y10T428/24802
摘要： The present invention includes an imprint lithography system for impinging a flux of light upon a liquid to polymerize the liquid, the system including, a source of light producing the flux of light; and a template having overlay marks being disposed between the liquid and the source of light and being opaque to the flux of light, with a pitch of the overlay marks establishing a polarization of the flux of light such that the flux of light impinges upon and polymerizes the liquid in superimposition with the overlay marks.
摘要翻译：本发明包括一种用于将光束照射在液体上以使液体聚合的压印光刻系统，该系统包括产生光通量的光源; 并且具有覆盖标记的模板设置在液体和光源之间，并且对于光通量不透明，叠加标记的间距建立光通量的偏振，使得光束流入并聚合液体与叠加标记叠加。

12. 发明申请

US20060258147A1 Method of forming closed air gap interconnects and structures formed thereby 有权
公开(公告)号：US20060258147A1
公开(公告)日：2006-11-16
申请号：US11405287
申请日：2006-04-17
申请人： Matthew Colburn , Timothy Dalton , Elbert Huang , Simon Karecki , Anna Karecki , Satya Nitta , Sampath Purushothaman , Katherine Saenger , Maheswaran Surendra
发明人： Matthew Colburn , Timothy Dalton , Elbert Huang , Simon Karecki , Anna Karecki , Satya Nitta , Sampath Purushothaman , Katherine Saenger , Maheswaran Surendra
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L21/76807 , H01L21/7682 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.

13. 发明申请

US20060145400A1 Method and apparatus for direct referencing of top surface of workpiece during imprint lithography 有权
标题翻译：用于在压印光刻期间直接参考工件顶面的方法和装置
公开(公告)号：US20060145400A1
公开(公告)日：2006-07-06
申请号：US11028798
申请日：2005-01-04
申请人： Matthew Colburn , Yves Martin , Theodore van Kessel , Hematha Wickramasinghe
发明人： Matthew Colburn , Yves Martin , Theodore van Kessel , Hematha Wickramasinghe
IPC分类号： B29C35/08
CPC分类号： G03F7/0002 , B29C33/20 , B29C33/30 , B29C33/303 , B29C43/021 , B29C2043/025 , B29C2043/5841 , B82Y10/00 , B82Y40/00 , G03F9/00 , G03F9/703 , G03F9/7042 , G03F9/7053
摘要： An apparatus (and method) for referencing a surface of a workpiece during imprint lithography, includes an air bearing for mechanically referencing a surface of the workpiece, and a lithographic template coupled to the air bearing.
摘要翻译：一种用于在压印光刻期间参考工件表面的装置（和方法）包括用于机械地参考工件表面的空气轴承和耦合到空气轴承的光刻模板。

14. 发明申请

US20050236739A1 Step and flash imprint lithography 审中-公开
标题翻译：步进和闪光刻印光刻
公开(公告)号：US20050236739A1
公开(公告)日：2005-10-27
申请号：US11062420
申请日：2005-02-22
申请人： Carlton Willson , Matthew Colburn
发明人： Carlton Willson , Matthew Colburn
IPC分类号： G03F7/038 , B29C31/00 , B81C1/00 , G03F7/00 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065 , H05K3/06
CPC分类号： B82Y10/00 , B29C43/003 , B29C43/021 , B29C2043/025 , B82Y40/00 , G03F7/0002 , H05K3/061 , Y10S977/887 , Y10S977/897
摘要： A method of forming a relief image in a structure comprising a substrate and a transfer layer formed thereon comprises covering the transfer layer with a polymerizable fluid composition, and then contacting the polymerizable fluid composition with a mold having a relief structure formed therein such that the polymerizable fluid composition fills the relief structure in the mold. The polymerizable fluid composition is subjected to conditions to polymerize polymerizable fluid composition and form a solidified polymeric material therefrom on the transfer layer. The mold is then separated from the solid polymeric material such that a replica of the relief structure in the mold is formed in the solidified polymeric material; and the transfer layer and the solidified polymeric material are subjected to an environment to selectively etch the transfer layer relative to the solidified polymeric material such that a relief image is formed in the transfer layer.
摘要翻译：在包括基板和形成在其上的转印层的结构中形成浮雕图像的方法包括用可聚合流体组合物覆盖转印层，然后使可聚合流体组合物与其中形成有浮雕结构的模具接触，使得可聚合的流体组合物填充模具中的浮雕结构。可聚合流体组合物经受聚合可聚合流体组合物并在转移层上形成固化的聚合物材料的条件。然后将模具与固体聚合物材料分离，使得在固化的聚合物材料中形成模具中的浮雕结构的复制品; 并且转印层和固化的聚合物材料经受环境以相对于固化的聚合物材料选择性地蚀刻转印层，使得在转印层中形成浮雕图像。

15. 发明申请

US20050106762A1 Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics 失效
标题翻译：用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复
公开(公告)号：US20050106762A1
公开(公告)日：2005-05-19
申请号：US10853771
申请日：2004-05-25
申请人： Nirupama Chakrapani , Matthew Colburn , Christos Dimitrakopoulos , Dirk Pfeiffer , Sampath Purushothaman , Satyanarayana Nitta
发明人： Nirupama Chakrapani , Matthew Colburn , Christos Dimitrakopoulos , Dirk Pfeiffer , Sampath Purushothaman , Satyanarayana Nitta
IPC分类号： H01L21/00 , H01L21/3105 , H01L21/312 , H01L21/768
CPC分类号： H01L21/76826 , H01L21/02126 , H01L21/02203 , H01L21/31058 , H01L21/76807 , H01L21/76814 , H01L2924/0002 , H01L2924/00
摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.
摘要翻译：通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接连接到网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

16. 发明申请

US20050062165A1 Method of forming closed air gap interconnects and structures formed thereby 有权
标题翻译：形成闭合气隙互连件和由此形成的结构的方法
公开(公告)号：US20050062165A1
公开(公告)日：2005-03-24
申请号：US10666564
申请日：2003-09-19
申请人： Katherine Saenger , Maheswaran Surendra , Simon Karecki , Satya Nitta , Sampath Purushothaman , Matthew Colburn , Timothy Dalton , Elbert Huang
发明人： Katherine Saenger , Maheswaran Surendra , Simon Karecki , Satya Nitta , Sampath Purushothaman , Matthew Colburn , Timothy Dalton , Elbert Huang
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L23/48 , H01L21/4763
CPC分类号： H01L21/76807 , H01L21/7682 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.
摘要翻译：描述了形成闭合气隙互连结构的方法。与存在于所述互连结构的其余部分的一个或多个牺牲介电质制成的互连线下永久支撑电介质的区域和周围的互连通孔的起始结构，覆盖有其使用模版具有规则穿孔的电介质阻挡孔阵列然后通过电介质阻挡层中的孔提取牺牲电介质，使得互连线基本上被除了线下方的支撑电介质的区域之外的空气包围。通过沉积第二阻挡电介质来封闭盖层中的孔，从而形成封闭的气隙。描述该方法的几个实施例和所得到的结构。

17. 发明申请

US20050045997A1 Method for producing self-aligned mask, articles produced by same and composition for same 有权
标题翻译：用于生产自对准面罩的方法，由相同制造的制品及其组合物
公开(公告)号：US20050045997A1
公开(公告)日：2005-03-03
申请号：US10653476
申请日：2003-09-02
申请人： Timothy Brunner , Matthew Colburn , Elbert Huang , Muthumanickam Sankarapandian
发明人： Timothy Brunner , Matthew Colburn , Elbert Huang , Muthumanickam Sankarapandian
IPC分类号： G03F7/00 , G03F7/20 , H01L23/58
CPC分类号： H01L21/76834 , G03F7/0035 , G03F7/2022 , H01L21/76849 , Y10S430/146
摘要： A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.
摘要翻译：一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩蔽材料是光敏的或热敏感的; 进行基板的覆盖曝光; 并且允许至少一部分掩模材料以复制衬底的现有图案的方式优先显影。现有图案可以由具有第一反射率的第一组基底区域和第二组区域组成，该第二组区域具有不同于第一组成的第二反射率。第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。按照该方法制造的结构。

18. 发明申请

US20060264036A1 Line level air gaps 审中-公开
标题翻译：线路气隙
公开(公告)号：US20060264036A1
公开(公告)日：2006-11-23
申请号：US11491816
申请日：2006-07-24
申请人： Shyng-Tsong Chen , Stefanie Chiras , Matthew Colburn , Tomothy Dalton , Jeffrey Hedrick , Elbert Huang , Kaushik Kumar , Michael Lane , Kelly Malone , Chandrasekhar Narayan , Satyanarayana Nitta , Sampath Purushothaman , Robert Rosenberg , Christy Tyberg , Roy Yu
发明人： Shyng-Tsong Chen , Stefanie Chiras , Matthew Colburn , Tomothy Dalton , Jeffrey Hedrick , Elbert Huang , Kaushik Kumar , Michael Lane , Kelly Malone , Chandrasekhar Narayan , Satyanarayana Nitta , Sampath Purushothaman , Robert Rosenberg , Christy Tyberg , Roy Yu
IPC分类号： H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.
摘要翻译：在多电平微电子集成电路中，空气包括永久线路电介质，超低K材料通过电介质。在通过清洁热分解除去牺牲材料并通过IC结构中的孔隙率辅助副产物扩散后，将空气供应到线路电平。任选地，空气也包括在通孔级电介质中的孔隙中。通过将空气结合到本发明产生的程度，使层内和层间介电值最小化。

19. 发明授权

US06986975B2 Method of aligning a template with a substrate employing moire patterns 有权
标题翻译：将模板与采用莫尔图案的基板对准的方法
公开(公告)号：US06986975B2
公开(公告)日：2006-01-17
申请号：US10818099
申请日：2004-04-05
申请人： Sidlgata V. Sreenivasan , Byung J. Choi , Matthew Colburn , Todd Bailey
发明人： Sidlgata V. Sreenivasan , Byung J. Choi , Matthew Colburn , Todd Bailey
IPC分类号： G03F9/00
CPC分类号： B29C35/0888 , B29C37/0053 , B29C43/003 , B29C43/021 , B29C2035/0827 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00 , Y10S101/36 , Y10T428/24802
摘要： The present invention includes a method of determining an alignment between a substrate and a template spaced-apart from the substrate and having a distance defined therebetween, the substrate having a first pattern disposed thereon and the template having a second pattern disposed thereon, the method including, sensing the first and the second pattern, with the distance being established such that the first and the second pattern form a desired moiré pattern when the template and the substrate are in a desired spatial relationship.
摘要翻译：本发明包括一种确定衬底和与衬底间隔开的并具有在其间限定的距离的模板之间的对准的方法，所述衬底具有设置在其上的第一图案，并且所述模板具有设置在其上的第二图案，所述方法包括感测第一和第二图案，其中建立距离使得当模板和衬底处于期望的空间关系时，第一和第二图案形成期望的莫尔图案。

20. 发明申请

US20050272341A1 Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby 失效
标题翻译：制造自对准纳米柱状空中桥梁的方法及由此制造的结构
公开(公告)号：US20050272341A1
公开(公告)日：2005-12-08
申请号：US11150059
申请日：2005-06-10
申请人： Matthew Colburn , Satyanarayana Nitta , Sampath Purushothaman
发明人： Matthew Colburn , Satyanarayana Nitta , Sampath Purushothaman
IPC分类号： H01J9/14 , H01L21/3205 , H01L21/4763 , H01L21/768 , H01L21/8242 , H01L23/48 , H01L23/52 , H01L23/522 , H01L23/532 , H01L29/06 , H01L29/40
CPC分类号： H01L21/7682 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a low k, ultra-low k, and extreme-low k multilayer interconnect structure on a substrate in which the interconnect line features are separated laterally by a dielectric with vertically oriented nano-scale voids formed by perforating it using sub-optical lithography patterning and etching techniques and closing off the tops of the perforations by a dielectric deposition step. The lines are supported either by solid or patterned dielectric features underneath. The method avoids the issues associated with the formation of air gaps after the fabrication of conductor patterns and those associated with the integration of conventional low k, ultra-low k and extreme low k dielectrics which have porosity present before the formation of the interconnect patterns.
摘要翻译：一种用于在衬底上制造低k，超低k和极低k多层互连结构的方法，其中互连线特征由具有垂直取向的纳米级空隙的电介质侧向分开，光刻图案和蚀刻技术，并通过介电沉积步骤封闭穿孔的顶部。线路由固体或图案化的电介质特征支撑。该方法避免了在形成导体图案之后与形成气隙相关的问题，以及与形成互连图案之前具有孔隙率的常规低k，超低k和极低k电介质的集成相关联的问题。

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