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11. 发明申请

US20070213967A1 Method of performing multiple stage model calibration for optical imaging simulation models 有权
标题翻译：对光学成像模拟模型进行多级模型校准的方法
公开(公告)号：US20070213967A1
公开(公告)日：2007-09-13
申请号：US11708137
申请日：2007-02-20
申请人： Sangbong Park , Duan-Fu Hsu , Edita Tejnil
发明人： Sangbong Park , Duan-Fu Hsu , Edita Tejnil
IPC分类号： G06G7/48
CPC分类号： G03F7/705
摘要： A method of calibrating a simulation model of a photolithography process. The method includes the steps of defining a set of input data; defining a simulation model having model parameters which affect the simulation result produced by the simulation model; performing a first stage calibration process in which the model parameters and alignment parameters are adjusted such that the simulation result is within a first predefined error tolerance; and performing a second stage calibration process in which the alignment parameters are fixed and the model parameters are adjusted such that the simulation result is within a second predefined error tolerance.
摘要翻译：校准光刻工艺的仿真模型的方法。该方法包括定义一组输入数据的步骤; 定义具有影响仿真模型产生的仿真结果的模型参数的仿真模型; 执行第一阶段校准过程，其中调整模型参数和对准参数，使得模拟结果在第一预定义的误差容限内; 并且执行第二阶段校准过程，其中对准参数是固定的并且模型参数被调整以使得模拟结果在第二预定义的误差容限内。

12. 发明申请

US20050028129A1 Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout 有权
标题翻译：使用设备布局的NA-Sigma曝光设置和散射棒OPC的同时优化的方法，程序产品和设备
公开(公告)号：US20050028129A1
公开(公告)日：2005-02-03
申请号：US10878489
申请日：2004-06-29
申请人： Duan-Fu Hsu , Armin Liebchen
发明人： Duan-Fu Hsu , Armin Liebchen
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , H01L21/027 , G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125 , G03F7/70425
摘要： Disclose is a method, program product and apparatus for optimizing numerical aperture (“NA”) and sigma of a lithographic system based on the target layout. A pitch or interval analysis is performed to identify the distribution of critical pitch over the design. Based on the pitch or interval analysis, a critical dense pitch is identified. NA, sigma-in, sigma-out parameters are optimized such that the critical feature will print with or without bias adjustment. For features other than the critical dense features, adjustments are made in accordance with OPC, and lithographic apparatus settings are further mutually optimized. Accordingly, lithographic apparatus settings may be optimized for any pattern concurrently with OPC.
摘要翻译： Disclose是一种基于目标布局优化光刻系统的数值孔径（“NA”）和sigma的方法，程序产品和设备。执行音调或间隔分析以确定设计上的关键音高的分布。基于间距或间隔分析，确定了一个临界密度。 NA，sigma-in，sigma-out参数被优化，使得临界特征将在有或没有偏置调整的情况下打印。对于临界致密特征以外的特征，根据OPC进行调整，并进一步相互优化光刻设备设置。因此，可以对于与OPC同时的任何图案来优化光刻设备设置。

13. 发明授权

US09588438B2 Optimization flows of source, mask and projection optics 有权
标题翻译：源，掩模和投影光学器件的优化流程
公开(公告)号：US09588438B2
公开(公告)日：2017-03-07
申请号：US13293116
申请日：2011-11-09
申请人： Duan-Fu Hsu , Luoqi Chen , Hanying Feng , Rafael C. Howell , Xinjian Zhou , Yi-Fan Chen
发明人： Duan-Fu Hsu , Luoqi Chen , Hanying Feng , Rafael C. Howell , Xinjian Zhou , Yi-Fan Chen
IPC分类号： G06F17/50 , G03F7/20
CPC分类号： G03F7/70066 , G03F7/705
摘要： Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.
摘要翻译：本发明的实施例提供了优化包括优化其中的投影光学元件的光刻投影装置的方法。目前的实施例包括几个流程，包括优化源，掩模和投影光学器件以及组合投影光学元件，掩模和源中的任何一个的各种顺序和迭代优化步骤。投影光学器件有时被广泛地称为“透镜”，因此优化过程可以被称为源掩模透镜优化（SMLO）。 SMLO可能比现有的源掩码优化过程（SMO）或其他不包括投影光学优化的优化过程更为理想，部分原因是在优化中包括投影光学器件可能会导致更大的工艺窗口，通过引入多个可调整的特性投影光学。投影光学元件可用于在光刻投影设备中形成波前，从而实现整个成像过程的像差控制。

14. 发明申请

US20120113404A1 Optimization Flows of Source, Mask and Projection Optics 有权
标题翻译：源，掩模和投影光学的优化流程
公开(公告)号：US20120113404A1
公开(公告)日：2012-05-10
申请号：US13293116
申请日：2011-11-09
申请人： Duan-Fu Hsu , Luoqi Chen , Hanying Feng , Rafael C. Howell , Xinjian Zhou , Yi-Fan Chen
发明人： Duan-Fu Hsu , Luoqi Chen , Hanying Feng , Rafael C. Howell , Xinjian Zhou , Yi-Fan Chen
IPC分类号： G03B27/54
CPC分类号： G03F7/70066 , G03F7/705
摘要： Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.
摘要翻译：本发明的实施例提供了优化包括优化其中的投影光学元件的光刻投影装置的方法。目前的实施例包括几个流程，包括优化源，掩模和投影光学器件以及组合投影光学元件，掩模和源中的任何一个的各种顺序和迭代优化步骤。投影光学器件有时被广泛地称为“透镜”，因此优化过程可以被称为源掩模透镜优化（SMLO）。 SMLO可能比现有的源掩码优化过程（SMO）或其他不包括投影光学优化的优化过程更为理想，部分原因是在优化中包括投影光学器件可能会导致更大的工艺窗口，通过引入多个可调整的特性投影光学。投影光学元件可用于在光刻投影设备中形成波前，从而实现整个成像过程的像差控制。

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