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11. 发明授权

US07417260B2 Multiple-chromatic light emitting device 失效
标题翻译：多色发光装置
公开(公告)号：US07417260B2
公开(公告)日：2008-08-26
申请号：US11169565
申请日：2005-06-28
申请人： Dong-Sing Wuu , Ray-Hua Horng
发明人： Dong-Sing Wuu , Ray-Hua Horng
IPC分类号： H01L29/20 , H01L29/22
CPC分类号： H01L25/0753 , H01L33/508 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014
摘要： A light emitting device includes: a first LED that emits a first primary light in a first primary wavelength range when activated; a second LED that emits a second primary light in a second primary wavelength range when activated, the second primary wavelength range differing from the first primary wavelength range; and a semiconductor photon-recycling member associated with the first LED in such a manner to convert a portion of the first primary light into a secondary light in a secondary wavelength range through photon-recycling mechanism and to permit the remainder of the first primary light to pass therethrough. The secondary wavelength range is different from the first and second primary wavelength ranges, thereby enabling the light emitting device to emit a multiple-chromatic light.
摘要翻译：发光装置包括：第一LED，其在被激活时发射在第一主要波长范围内的第一初级光; 第二LED，其在被激活时发射在第二主要波长范围内的第二原色光，所述第二主要波长范围不同于所述第一主要波长范围; 以及与第一LED相关联的半导体光子再循环元件，以这样的方式，通过光子再循环机构将第一原色光的一部分转变成次级波长范围内的次级光，并允许第一主光的剩余部分通过。次级波长范围不同于第一和第二主要波长范围，从而使得发光器件能够发射多色光。

12. 发明申请

US20080194049A1 Method for making a light emitting device 审中-公开
标题翻译：制造发光装置的方法
公开(公告)号：US20080194049A1
公开(公告)日：2008-08-14
申请号：US11812418
申请日：2007-06-19
申请人： Dong-Sing Wuu , Ray-Hua Horng , Cheng-Chung Chiang
发明人： Dong-Sing Wuu , Ray-Hua Horng , Cheng-Chung Chiang
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A method for making a light emitting device includes: (a) preparing a chip-mounting board having a conductive surface; (b) mounting a plurality of vertical-feedthrough-LED chips on the conductive surface of the chip-mounting board; (c) forming a photoresist layer that cooperates with the chip-mounting board to enclose the vertical-feedthrough-LED chips; (d) patterning the photoresist layer by photolithography techniques to form a plurality of holes in the photoresist layer in such a manner that each of the holes exposes an electrode of a respective one of the vertical-feedthrough-LED chips; and (e) forming a conductive layer that covers the patterned photoresist layer and the vertical-feedthrough-LED chips.
摘要翻译：制造发光器件的方法包括：（a）制备具有导电表面的芯片安装板; （b）将多个垂直馈通LED芯片安装在芯片安装板的导电表面上; （c）形成与芯片安装板配合以包围垂直馈通LED芯片的光致抗蚀剂层; （d）通过光刻技术图案化光致抗蚀剂层，以在光致抗蚀剂层中形成多个孔，使得每个孔暴露垂直馈通LED芯片中相应一个的电极; 和（e）形成覆盖图案化光致抗蚀剂层和垂直馈通LED芯片的导电层。

13. 发明申请

US20060267025A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20060267025A1
公开(公告)日：2006-11-30
申请号：US11129307
申请日：2005-05-16
申请人： Dong-Sing Wuu , Ray-Hua Horng , Woei-Kai Wang
发明人： Dong-Sing Wuu , Ray-Hua Horng , Woei-Kai Wang
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/20 , H01L33/22
摘要： A light emitting device includes a substrate having a patterned surface and formed with a plurality of spaced apart cavities, and an epitaxial layer formed on the patterned surface of the substrate, having a patterned surface that is in face-to-face contact with the patterned surface of the substrate, and formed with a plurality of protrusions that protrude from the patterned surface of the epitaxial layer and that are respectively received in the cavities. Each of the protrusions is polygonal in shape and defines a plurality of vertices. The vertices of each of the protrusions contact the cavity-defining wall of the respective one of the cavities so as to form a plurality of closed pores between each of the protrusions and the cavity-defining wall of the respective one of the cavities.
摘要翻译：发光器件包括具有图案化表面并且形成有多个间隔开的空腔的衬底，以及形成在衬底的图案化表面上的外延层，其具有与图案面对面接触的图案化表面并且形成有从外延层的图案化表面突出并分别容纳在空腔中的多个突起。每个突起的形状是多边形并且限定多个顶点。每个突起的顶点接触相应一个空腔的空腔限定壁，以便在每个突起和相应的一个空腔的空腔限定壁之间形成多个闭合孔。

14. 发明授权

US07118930B1 Method for manufacturing a light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US07118930B1
公开(公告)日：2006-10-10
申请号：US11205213
申请日：2005-08-17
申请人： Dong-Sing Wuu , Ray-Hua Horng
发明人： Dong-Sing Wuu , Ray-Hua Horng
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , Y10S438/928 , Y10S438/977
摘要： A method for manufacturing a light emitting device includes (a) preparing a semiconductor element formed with a crystalline substrate, and a temporary element, the temporary element including a laser-transmissive substrate and a laser-dissociable layer formed on the laser-transmissive substrate, (b) attaching the laser-dissociable layer of the temporary element to the epitaxial layer of the semiconductor element through a adhesive layer, (c) thinning the crystalline substrate, (d) applying a laser beam to the temporary element so as to dissociate the laser-dissociable layer of the temporary element, and removing the temporary element from the adhesive layer, and (e) removing the adhesive layer from the epitaxial layer of the semiconductor element.
摘要翻译：一种制造发光器件的方法包括：（a）制备形成有晶体衬底的半导体元件和临时元件，所述临时元件包括激光透射衬底和形成在激光透射衬底上的激光可解离层，（b）通过粘合剂层将临时元件的激光可分离层附着到半导体元件的外延层，（c）使晶体基板变薄;（d）将激光束施加到临时元件上，所述临时元件的激光离解层，以及从所述粘合剂层移除所述临时元件，以及（e）从所述半导体元件的外延层去除所述粘合剂层。

15. 发明授权

US07998768B1 Method for forming a light emitting diode 有权
标题翻译：形成发光二极管的方法
公开(公告)号：US07998768B1
公开(公告)日：2011-08-16
申请号：US12903872
申请日：2010-10-13
申请人： Ray-Hua Horng , Dong-Sing Wuu
发明人： Ray-Hua Horng , Dong-Sing Wuu
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/46
摘要： A method for forming a light emitting diode includes: (a) growing epitaxially an epitaxial film over an epitaxial substrate; (b) roughening an upper surface of the epitaxial film; (c) forming a top electrode on the roughened upper surface of the epitaxial film; (d) detachably attaching a temporary substrate over the roughened upper surface of the epitaxial film; (e) roughening the lower surface of the epitaxial film; (f) disposing the roughened lower surface of the epitaxial film on a reflective top surface of an electrically conductive permanent substrate; (g) filling an optical adhesive in a gap between the roughened lower surface of the epitaxial film and the reflective top surface of the permanent substrate; and (h) after the step (g), removing the temporary substrate from the epitaxial film.
摘要翻译：一种形成发光二极管的方法包括：（a）在外延衬底上外延生长外延膜; （b）使外延膜的上表面粗糙化; （c）在所述外延膜的粗糙化的上表面上形成顶部电极; （d）在外延薄膜的粗糙化的上表面上可拆卸地将临时衬底附着; （e）使外延膜的下表面粗糙化; （f）将外延膜的粗糙化的下表面设置在导电永久基板的反射顶表面上; （g）将光学粘合剂填充在外延膜的粗糙化的下表面与永久性基板的反射顶表面之间的间隙中; 和（h）步骤（g）之后，从外延膜去除临时衬底。

16. 发明申请

US20090127575A1 Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same 审中-公开
标题翻译：具有高光提取的发光二极管芯片及其制造方法
公开(公告)号：US20090127575A1
公开(公告)日：2009-05-21
申请号：US12039563
申请日：2008-02-28
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L29/22 , H01L33/0079 , H01L33/44
摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.
摘要翻译：本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及一对用于向外延层结构提供电源的电极。外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。因此外延层结构产生的光被有效地抽出。形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。朝向基板的光更有效地向上反射。因此光提取和亮度增强。还提供了用于制造本发明的发光二极管芯片的方法。

17. 发明申请

US20070206130A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20070206130A1
公开(公告)日：2007-09-06
申请号：US11488012
申请日：2006-07-18
申请人： Dong-Sing Wuu , Ray-Hua Horng , Woei-Kai Wang , Kuo-Sheng Wen
发明人： Dong-Sing Wuu , Ray-Hua Horng , Woei-Kai Wang , Kuo-Sheng Wen
IPC分类号： G02F1/1333
CPC分类号： H01L33/10 , H01L33/20
摘要： A light emitting device includes: a light-enhancing layered structure of a hexagonal crystal system, the light-enhancing layered structure including a light-enhancing layer having a planar surface that is formed with a plurality of light-enhancing units thereon, each of the light-enhancing units extending in a normal direction relative to the planar surface, being tapered from the planar surface, and having three inclined faces that are adjoined side-by-side and that are respectively parallel to corresponding symmetrical ones of the crystal planes {11 2 k} of the hexagonal crystal system, where k=2 to 5; and a light emitting layered structure formed on the light-enhancing layered structure.
摘要翻译：发光器件包括：六方晶系的增光层状结构，所述光增强层状结构包括具有在其上形成有多个光增强单元的平坦表面的光增强层，相对于平面在法线方向延伸的光增强单元从平面呈锥形，并且具有并列邻接的三个倾斜面，并且分别与晶面{11 其中 2 k}，其中 k = 2至5; 以及形成在增光分层结构上的发光层状结构。

18. 发明授权

US06287882B1 Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same 有权
标题翻译：具有金属涂层反射永久性基板的发光二极管及其制造方法
公开(公告)号：US06287882B1
公开(公告)日：2001-09-11
申请号：US09411945
申请日：1999-10-04
申请人： Kuo-Hsiung Chang , Kun-Chuan Lin , Ray-Hua Horng , Man-Fang Huang , Dong-Sing Wuu , Sun-Chin Wei
发明人： Kuo-Hsiung Chang , Kun-Chuan Lin , Ray-Hua Horng , Man-Fang Huang , Dong-Sing Wuu , Sun-Chin Wei
IPC分类号： H01L2100
CPC分类号： H01L33/405 , H01L33/0079
摘要： A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a metal-coated reflective permanent substrate and then removing the temporary substrate. The reflective metal layer also serves as a bonding agent for bonding the permanent substrate. The bonded LED element and permanent substrate are heated in a wafer bonding tool that includes a graphite lower chamber and a graphite upper cover with a stainless steel screw. Because of the different thermal expansion coefficients between stainless and graphite, the stainless steel screw applies a pressure to the bonded structure during the heating process to assist the bonding of the permanent substrate.
摘要翻译：一种制造发光二极管（LED）的方法包括在临时衬底上生长发光区域，将金属涂覆的反射永久衬底接合，然后移除临时衬底。反射金属层也用作粘合永久性基板的粘合剂。粘结的LED元件和永久性基板在包括石墨下部腔和具有不锈钢螺钉的石墨上盖的晶片接合工具中被加热。由于不锈钢和石墨之间的热膨胀系数不同，不锈钢螺丝在加热过程中对接合结构施加压力，以有助于永久性基体的结合。

19. 发明授权

US09142719B2 Patterned substrate and light-emitting diode having the same 有权
标题翻译：图案化基板和具有相同的发光二极管
公开(公告)号：US09142719B2
公开(公告)日：2015-09-22
申请号：US13242414
申请日：2011-09-23
申请人： Dong-Sing Wuu , Ray-Hua Horng , Wei-Ting Lin
发明人： Dong-Sing Wuu , Ray-Hua Horng , Wei-Ting Lin
IPC分类号： H01L21/02 , H01L33/20 , H01L33/00
CPC分类号： H01L33/20 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding wall face that extends from the bottom wall face to the top surface; and a plurality of protrusions, each of which protrudes upwardly from the bottom wall face of the recess-defining wall of a respective one of the recesses. A light-emitting diode having the patterned substrate is also disclosed.
摘要翻译：用于外延形成发光二极管的图案化衬底包括：顶表面; 多个间隔开的凹部，每个凹槽从顶表面向下凹入，每个凹槽由凹口限定壁限定，凹口限定壁具有底壁面和围绕壁面延伸的周围壁面底壁面向上表面; 以及多个突起，每个突起从相应的一个凹部的凹陷限定壁的底壁面向上突出。还公开了具有图案化衬底的发光二极管。

20. 发明授权

US08853057B2 Method for fabricating semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08853057B2
公开(公告)日：2014-10-07
申请号：US13242362
申请日：2011-09-23
申请人： Dong-Sing Wuu , Ray-Hua Horng
发明人： Dong-Sing Wuu , Ray-Hua Horng
IPC分类号： H01L21/00 , H01L29/06 , H01L33/00 , H01L23/31 , H01L21/683 , H01L21/78 , H01L21/02
CPC分类号： H01L21/6835 , H01L21/02639 , H01L21/78 , H01L23/3171 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating semiconductor devices includes: (a) forming a layered structure that includes a temporary substrate, a plurality of spaced apart sacrificial film regions on the temporary substrate, and a plurality of valley-and-peak areas among the sacrificial film regions; (b) growing laterally and epitaxially an epitaxial film layer over the sacrificial film regions and the valley-and-peak areas, wherein gaps are formed among the epitaxial film layer and the valley-and-peak areas; (c) forming a conductive layer to contact the epitaxial film layer; (d) forming a plurality of grooves to divide the epitaxial film layer and the conductive layer into a plurality of epitaxial structures on the temporary substrate; and (e) removing the temporary substrate and the sacrificial film regions from the epitaxial structures by etching the sacrificial film regions through the gaps and the grooves.
摘要翻译：一种制造半导体器件的方法包括：（a）形成层叠结构，其包括临时衬底，临时衬底上的多个间隔的牺牲膜区域和牺牲膜区域中的多个谷 - 峰区域; （b）横向和外延生长在牺牲膜区域和谷 - 峰区域上的外延膜层，其中在外延膜层和谷 - 峰区域之间形成间隙; （c）形成与外延膜层接触的导电层; （d）形成多个沟槽以将外延膜层和导电层分成临时衬底上的多个外延结构; 以及（e）通过蚀刻通过间隙和沟槽的牺牲膜区域，从外延结构去除临时衬底和牺牲膜区域。

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