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11. 发明授权

US06868022B2 Redundant memory structure using bad bit pointers 有权
标题翻译：冗余内存结构使用坏位指针
公开(公告)号：US06868022B2
公开(公告)日：2005-03-15
申请号：US10402385
申请日：2003-03-28
申请人： Roy E. Scheuerlein , Mark G. Johnson , Derek J. Bosch , Alper Ilkbahar , J. James Tringali
发明人： Roy E. Scheuerlein , Mark G. Johnson , Derek J. Bosch , Alper Ilkbahar , J. James Tringali
IPC分类号： G11C7/10 , G11C7/24 , G11C29/00 , G11C29/44 , G11C7/00
CPC分类号： G11C29/76 , G11C7/1006 , G11C7/24 , G11C29/44 , G11C29/4401 , G11C29/78
摘要： The preferred embodiments described herein relate to a redundant memory structure using bad bit pointers. In one preferred embodiment, data is written in a first plurality of memory cells, and an error is detected in writing data in one of the memory cells. In response to the detected error, a pointer is written in a second plurality of memory cells, the pointer identifying which memory cell in the first plurality of memory cells contains the error. During a read operation, the data is read from the first plurality of memory cells, and the pointer is read from the second plurality of memory cells. From the pointer, the memory cell containing the error is identified, and the error is corrected. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.
摘要翻译：这里描述的优选实施例涉及使用坏位指针的冗余存储器结构。在一个优选实施例中，将数据写入第一多个存储单元，并且在存储单元之一中写入数据时检测到错误。响应于检测到的错误，指针被写入第二多个存储单元中，该指针标识第一多个存储单元中的哪个存储单元包含该错误。在读操作期间，从第一多个存储单元读取数据，并从第二多个存储单元读取指针。从指针中，识别包含错误的存储单元，并纠正错误。提供了其它优选实施方案，并且每个优选实施方案可以单独使用或彼此组合使用。

12. 发明授权

US06867992B2 Modular memory device 有权
标题翻译：模块化存储设备
公开(公告)号：US06867992B2
公开(公告)日：2005-03-15
申请号：US10342122
申请日：2003-01-13
申请人： J. James Tringali , P. Michael Farmwald , Thomas H. Lee , Mark G. Johnson , Derek J. Bosch
发明人： J. James Tringali , P. Michael Farmwald , Thomas H. Lee , Mark G. Johnson , Derek J. Bosch
IPC分类号： G06K19/077 , G11C5/00 , G11C5/02 , G11C5/06
CPC分类号： G11C5/025 , G11C5/063
摘要： In one embodiment, a modular memory device is presented comprising a substrate, a memory array fabricated above the substrate, and first and second circuitry fabricated on the substrate and under the memory array. The first and second circuitry allow the modular memory device to interface with first and second varieties of host devices, respectively. In another embodiment, a modular memory device is presented comprising a substrate, a memory array fabricated above the substrate, memory array support circuitry fabricated on the substrate, and logic circuitry fabricated on the substrate and under the memory array.
摘要翻译：在一个实施例中，呈现模块化存储器件，其包括衬底，在衬底上方制造的存储器阵列，以及在衬底上和存储器阵列下方制造的第一和第二电路。第一和第二电路允许模块化存储器件分别与第一和第二种类型的主机设备接口。在另一个实施例中，提出了一种模块化存储器件，其包括衬底，在衬底上方制造的存储器阵列，在衬底上制造的存储器阵列支持电路，以及在衬底上以及在存储器阵列之下的逻辑电路。

13. 发明授权

US07545689B2 Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information 失效
标题翻译：通过保证冗余信息的健康来提高半导体器件产量的方法和装置
公开(公告)号：US07545689B2
公开(公告)日：2009-06-09
申请号：US11894861
申请日：2007-08-21
申请人： Alper Ilkbahar , Derek J. Bosch
发明人： Alper Ilkbahar , Derek J. Bosch
IPC分类号： G11C7/00
CPC分类号： G11C29/76
摘要： A method is provided comprising reading a set of memory cells indicating whether stored redundancy information is reliable and, if the set of memory cells indicates that the stored redundancy information is reliable, determining whether to read primary memory or redundant memory based on the stored redundancy information. Another method is provided comprising reading a set of memory cells associated with a group of memory cells in a primary memory, the set of memory cells indicating whether data can be reliably stored in the group of memory cells; if the set of memory cells indicates that data can be reliably stored in the group of memory cells, storing data in the group of memory cells; and if the set of memory cells does not indicate that data can be reliably stored in the group of memory cells, storing data in a group of memory cells in a redundant memory. In another preferred embodiment, a method for providing memory redundancy is provided.
摘要翻译：提供了一种方法，其包括：读取一组存储器单元，指示存储的冗余信息是否可靠;以及如果存储单元组指示所存储的冗余信息是可靠的，则基于所存储的冗余信息确定是否读取主存储器还是冗余存储器。提供了另一种方法，包括读取与主存储器中的一组存储器单元相关联的一组存储器单元，该组存储器单元指示数据是否可以可靠地存储在存储器单元组中; 如果存储器单元组指示数据可以可靠地存储在存储器单元组中，则将数据存储在存储单元组中; 并且如果存储器单元组不指示数据可以可靠地存储在存储器单元组中，则将数据存储在冗余存储器中的一组存储器单元中。在另一个优选实施例中，提供了一种用于提供存储器冗余的方法。

14. 发明授权

US06584541B2 Method for storing digital information in write-once memory array 有权
标题翻译：用于将数字信息首先存储在可重写数字存储器中然后在一次写入存储器阵列中的方法
公开(公告)号：US06584541B2
公开(公告)日：2003-06-24
申请号：US09727229
申请日：2000-11-30
申请人： David R. Friedman , Derek J. Bosch , Christopher R. Moore , Joseph J. Tringali , Michael A. Vyvoda
发明人： David R. Friedman , Derek J. Bosch , Christopher R. Moore , Joseph J. Tringali , Michael A. Vyvoda
IPC分类号： G06F1314
CPC分类号： G11C17/00
摘要： An acquisition/playback device and a memory device including a solid-state write-once memory array are used to acquire and display digital information such as digital images, voice, music, or the like. Prior to display or other presentation, the digital information is stored in a re-writable memory. After the digital information has been displayed or otherwise presented to the user for review, the user then elects whether to store the digital information in the write-once memory array. Depending upon the user election, the digital information is either stored in the write-once memory array, or erased from the re-writable memory without being stored in the write-once memory array. In this way the limited storage capacity of the write-once memory array is preserved for digital information that is of long-term interest to the user. Similarly, an acquisition/playback device itself can review the digital information stored in the re-writable memory and determine whether to commit that file to the write-once memory or to discard the file from the re-writable memory.
摘要翻译：使用包括固态一次写入存储器阵列的采集/重放装置和存储装置来获取和显示数字图像，语音，音乐等数字信息。在显示或其他显示之前，数字信息存储在可重写存储器中。在将数字信息显示或以其他方式呈现给用户以进行审查之后，用户然后选择是否将数字信息存储在一次写入存储器阵列中。取决于用户选择，数字信息被存储在一次写入存储器阵列中，或者从可重写存储器中擦除而不被存储在一次写入存储器阵列中。以这种方式，为用户长期感兴趣的数字信息保留了一次写入存储器阵列的有限存储容量。类似地，采集/回放设备本身可以检查存储在可重写存储器中的数字信息，并确定是否将该文件提交给一次写入存储器，或者从该可重写存储器丢弃该文件。

15. 发明授权

US07277336B2 Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information 失效
公开(公告)号：US07277336B2
公开(公告)日：2007-10-02
申请号：US11024516
申请日：2004-12-28
申请人： Alper Ilkbahar , Derek J. Bosch
发明人： Alper Ilkbahar , Derek J. Bosch
IPC分类号： G11C7/00
CPC分类号： G11C29/76
摘要： A method is provided comprising reading a set of memory cells indicating whether stored redundancy information is reliable and, if the set of memory cells indicates that the stored redundancy information is reliable, determining whether to read primary memory or redundant memory based on the stored redundancy information. Another method is provided comprising reading a set of memory cells associated with a group of memory cells in a primary memory, the set of memory cells indicating whether data can be reliably stored in the group of memory cells; if the set of memory cells indicates that data can be reliably stored in the group of memory cells, storing data in the group of memory cells; and if the set of memory cells does not indicate that data can be reliably stored in the group of memory cells, storing data in a group of memory cells in a redundant memory. In another preferred embodiment, a method for providing memory redundancy is provided.

16. 发明授权

US06996017B2 Redundant memory structure using bad bit pointers 有权
标题翻译：冗余内存结构使用坏位指针
公开(公告)号：US06996017B2
公开(公告)日：2006-02-07
申请号：US10961501
申请日：2004-10-08
申请人： Roy E. Scheuerlein , Mark G. Johnson , Derek J. Bosch , Alper Ilkbahar , J. James Tringali
发明人： Roy E. Scheuerlein , Mark G. Johnson , Derek J. Bosch , Alper Ilkbahar , J. James Tringali
IPC分类号： G11C7/00
CPC分类号： G11C29/76 , G11C7/1006 , G11C7/24 , G11C29/44 , G11C29/4401 , G11C29/78
摘要： The preferred embodiments described herein relate to a redundant memory structure using bad bit pointers. In one preferred embodiment, data is written in a first plurality of memory cells, and an error is detected in writing data in one of the memory cells. In response to the detected error, a pointer is written in a second plurality of memory cells, the pointer identifying which memory cell in the first plurality of memory cells contains the error. During a read operation, the data is read from the first plurality of memory cells, and the pointer is read from the second plurality of memory cells. From the pointer, the memory cell containing the error is identified, and the error is corrected. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.
摘要翻译：这里描述的优选实施例涉及使用坏比特指针的冗余存储器结构。在一个优选实施例中，将数据写入第一多个存储单元，并且在存储单元之一中写入数据时检测到错误。响应于检测到的错误，指针被写入第二多个存储单元中，该指针标识第一多个存储单元中的哪个存储单元包含该错误。在读操作期间，从第一多个存储单元读取数据，并从第二多个存储单元读取指针。从指针中，识别包含错误的存储单元，并纠正错误。提供了其它优选实施方案，并且每个优选实施方案可以单独使用或彼此组合使用。

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