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11. 发明授权

US07164563B2 Circuit interrupting device line load reversal sensing system 有权
标题翻译：电路中断装置线路负载反向感测系统
公开(公告)号：US07164563B2
公开(公告)日：2007-01-16
申请号：US10761292
申请日：2004-01-22
申请人： David Y. Chan , Bernard J. Gershen
发明人： David Y. Chan , Bernard J. Gershen
IPC分类号： H02H3/00
CPC分类号： H02H3/338 , H01H83/04
摘要： A resettable circuit interrupting device such as a GFCI that, when reverse wired during installation, will trip and prevent power being applied to the load side of the GFCI when powered up. A current limiting circuit is connected between the phase and a ground terminal on the line side of the differential transformer of the GFCI. When the GFCI is connected correctly, the current through the current limiting circuit will have no significant effect on the GFCI, and it will operate normally. When, however, the line conductors are connected to the load terminals of the GFCI and the load conductors are connected to the line terminals of the GFCI, the current through the current limiting circuit will appear as a ground fault and cause the GFCI to trip.
摘要翻译：一种可复位的电路中断装置，例如GFCI，当在安装期间反向接线时，将在上电时跳闸并防止向GFCI的负载侧施加电力。电流限制电路连接在GFCI差动变压器线路侧的相位与接地端子之间。当GFCI连接正确时，通过限流电路的电流对GFCI没有显着影响，它将正常工作。然而，当线路导体连接到GFCI的负载端子并且负载导体连接到GFCI的线路端子时，通过限流电路的电流将显示为接地故障并导致GFCI跳闸。

12. 发明授权

US06682861B2 Disposable hard mask for phase shift photomask plasma etching 有权
标题翻译：一次性硬掩模用于相移光掩模等离子体蚀刻
公开(公告)号：US06682861B2
公开(公告)日：2004-01-27
申请号：US10370408
申请日：2003-02-19
申请人： David Y. Chan
发明人： David Y. Chan
IPC分类号： G03F900
CPC分类号： G03F1/80 , G03F1/30 , G03F7/094
摘要： A method for creating a phase shift photomask which includes a layer of hard mask material, the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the phase shift photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches opaque material (and anti-reflective layer, if used) and phase shift layers.
摘要翻译：一种用于产生包括硬掩模材料层的相移光掩模的方法，其包括通过最小化宏观和微观负载的影响来改善光掩模上的临界尺寸的均匀性。本发明的相移光掩模的制造方法包括两个蚀刻工序。第一蚀刻工艺蚀刻硬掩模层，并且第二蚀刻工艺蚀刻不透明材料（和抗反射层，如果使用）和相移层。

13. 发明授权

US06671145B2 Reset lockout mechanism and independent trip mechanism for center latch circuit interrupting device 失效
公开(公告)号：US06671145B2
公开(公告)日：2003-12-30
申请号：US09812624
申请日：2001-03-20
申请人： Frantz Germain , Stephen Stewart , Roger M. Bradley , David Y. Chan , Nichalas L. Disalvo , William R. Ziegler
发明人： Frantz Germain , Stephen Stewart , Roger M. Bradley , David Y. Chan , Nichalas L. Disalvo , William R. Ziegler
IPC分类号： H02H316
CPC分类号： H01H83/04 , H01H2083/201 , H02H3/335
摘要： Resettable circuit interrupting devices, such as GFCI devices, that include a reset lockout mechanism, an independent trip mechanism and reverse wiring protection. A conical reset plunger is notched to force a successful test before reset.

14. 发明授权

US06537708B2 Electrical critical dimension measurements on photomasks 有权
公开(公告)号：US06537708B2
公开(公告)日：2003-03-25
申请号：US09773122
申请日：2001-01-31
申请人： David Y. Chan
发明人： David Y. Chan
IPC分类号： G03F900
CPC分类号： G03F7/70658 , G03F1/44
摘要： A method for measuring critical dimensions on photomasks, and more specifically to a method for measuring critical dimensions on photomasks using an electrical test structure. The test structure 30 may be comprised of a cross resistor 32 for van der Pauw sheet resistance measurements, a bridge resistor 34, and a split-bridge resistor 36.

15. 发明授权

US06472107B1 Disposable hard mask for photomask plasma etching 有权
标题翻译：一次性硬掩模，用于光掩模等离子体蚀刻
公开(公告)号：US06472107B1
公开(公告)日：2002-10-29
申请号：US09409454
申请日：1999-09-30
申请人： David Y. Chan
发明人： David Y. Chan
IPC分类号： G03F900
CPC分类号： G03F1/76 , G03F1/80 , G03F7/094
摘要： A method for creating a photomask which includes a layer of hard mask material the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches the anti-reflective material and opaque material.
摘要翻译：一种用于产生光掩模的方法，其包括硬掩模材料层，其中包含其中通过最小化宏观和微载荷的影响来改善光掩模上的临界尺寸的均匀性。本发明的光掩模的制造方法包括两个蚀刻工序。第一蚀刻工艺蚀刻硬掩模层，第二蚀刻工艺蚀刻抗反射材料和不透明材料。

16. 发明授权

US07813091B2 Leakage current detector interrupter with continuous duty relay 有权
标题翻译：带连续工作继电器的漏电检测器断路器
公开(公告)号：US07813091B2
公开(公告)日：2010-10-12
申请号：US11670933
申请日：2007-02-02
申请人： Roger M. Bradley , Thomas Keating , David Y. Chan
发明人： Roger M. Bradley , Thomas Keating , David Y. Chan
IPC分类号： H02H3/16
CPC分类号： H02H11/002
摘要： An LCDI device comprising a first switching element coupled to a second switching element. A shield conductor coupled to the first switching element form a system that monitors output conductors of the device for faults. The second switching element is coupled to a relay that electrically connects input conductors of the device to output conductors of the device when the relay is energized by the second switching element. When a fault occurs, the first switching element generates a signal to the second switching element which de-energizes the relay causing said relay to electrically disconnect the input conductors from the output conductors.
摘要翻译：一种LCDI装置，包括耦合到第二开关元件的第一开关元件。耦合到第一开关元件的屏蔽导体形成用于监测器件的输出导体的故障的系统。第二开关元件耦合到继电器，当继电器被第二开关元件激励时，该继电器将该器件的输入导体电连接到该器件的输出导体。当发生故障时，第一开关元件产生到第二开关元件的信号，该信号使继电器断电，使得继电器将输入导体与输出导体电断开。

17. 发明授权

US07012500B2 GFCI with enhanced surge suppression 失效
标题翻译： GFCI具有增强的浪涌抑制
公开(公告)号：US07012500B2
公开(公告)日：2006-03-14
申请号：US10804510
申请日：2004-03-19
申请人： David Y. Chan , Roger M. Bradley , John J. Power
发明人： David Y. Chan , Roger M. Bradley , John J. Power
IPC分类号： H01C7/10
CPC分类号： H01C7/126
摘要： An MOV element is physically and electrically connected to a heat sensitive material which changes from a low impedance path to a high impedance path, such as a spark gap, when the temperature of the MOV element rises to a temperature below that at which the MOV will enter into its thermal runaway state. More specifically, the heat sensitive material is located on a surface of the MOV and is electrically connected in series with the MOV. In operation, as the MOV gets hot, it heats the heat sensitive material. As the heat sensitive material gets hot, it starts to separate from the surface of the MOV to form a spark gap which is electrically connected in series with the MOV element to help dissipate excessive voltage. The heat sensitive material on the surface of the MOV element can be a coating of epoxy which cracks and/or breaks away, at least partially from the surface of the MOV element during the occurrence of a high voltage transient surge, or it can be a solder that sputters to form an arc path during the occurrence of a high voltage transient surge. In operation, when a GFCI is subjected to a high voltage transient surge above a certain magnitude, the heat sensitive material forms a spark gap which is in series with the MOV and prevents the GFCI from going into its destructive thermal runaway condition. Thus, prior to the MOV entering its thermal runaway state, it goes from being only an MOV to an MOV in series with a spark gap which can be used to protect an up stream GFCI during the occurrence of a high voltage transient surge.
摘要翻译：当MOV元件的温度上升到低于MOV的温度时，MOV元件物理和电连接到热敏材料，该热敏材料从低阻抗路径变化到高阻抗路径，例如火花隙，进入其热失控状态。更具体地说，热敏材料位于MOV的表面上并与MOV串联电连接。在操作中，当MOV变热时，它会加热感热材料。当感热材料变热时，它开始与MOV的表面分离，以形成与MOV元件串联电连接的火花隙，以帮助消散过大的电压。 MOV元件表面上的热敏材料可以是在高电压瞬变浪涌发生期间至少部分地从MOV元件的表面开裂和/或断开的环氧树脂涂层，或者它可以是在发生高电压瞬变浪涌期间，焊料溅射形成电弧路径。在操作中，当GFCI受到高于一定量级的高电压瞬态浪涌时，热敏材料形成与MOV串联的火花隙，并防止GFCI进入其破坏性热失控状态。因此，在MOV进入其热失控状态之前，它只能从MOV到MOV与串联的火花隙串联起来，该火花隙可以在发生高压瞬态浪涌时用于保护上行GFCI。

18. 发明授权

US06908716B2 Disposable hard mask for photomask plasma etching 有权
标题翻译：一次性硬掩模，用于光掩模等离子体蚀刻
公开(公告)号：US06908716B2
公开(公告)日：2005-06-21
申请号：US10839025
申请日：2004-05-04
申请人： David Y. Chan
发明人： David Y. Chan
IPC分类号： G03F1/76 , G03F7/09 , G03F9/00 , G03C5/00
CPC分类号： G03F1/76 , G03F1/80 , G03F7/094
摘要： A method for creating a photomask which includes a layer of hard mask material the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches the anti-reflective material and opaque material.
摘要翻译：一种用于产生光掩模的方法，其包括硬掩模材料层，其中包含其中通过最小化宏观和微载荷的影响来改善光掩模上的临界尺寸的均匀性。本发明的光掩模的制造方法包括两个蚀刻工序。第一蚀刻工艺蚀刻硬掩模层，第二蚀刻工艺蚀刻抗反射材料和不透明材料。

19. 发明授权

US06828886B2 Reset lockout mechanism and independent trip mechanism for center latch circuit interrupting device 失效
公开(公告)号：US06828886B2
公开(公告)日：2004-12-07
申请号：US10747484
申请日：2003-12-29
申请人： Frantz Germain , Stephen Stewart , Roger M. Bradley , David Y. Chan , Nichalas L. Disalvo , William R. Ziegler
发明人： Frantz Germain , Stephen Stewart , Roger M. Bradley , David Y. Chan , Nichalas L. Disalvo , William R. Ziegler
IPC分类号： H01H7300
CPC分类号： H01H83/04 , H01H71/62 , H01H2083/201 , H02H1/0015 , H02H3/335 , H02H3/338 , H02H5/083
摘要： Resettable circuit interrupting devices, such as GFCI devices, that include a reset lockout mechanism, an independent trip mechanism and reverse wiring protection. A conical reset plunger is notched to force a successful test before reset.

20. 发明授权

US06749974B2 Disposable hard mask for photomask plasma etching 有权
标题翻译：一次性硬掩模，用于光掩模等离子体蚀刻
公开(公告)号：US06749974B2
公开(公告)日：2004-06-15
申请号：US10234790
申请日：2002-09-03
申请人： David Y. Chan
发明人： David Y. Chan
IPC分类号： G03F900
CPC分类号： G03F1/76 , G03F1/80 , G03F7/094
摘要： A method for creating a photomask which includes a layer of hard mask material the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches the anti-reflective material and opaque material.
摘要翻译：一种用于产生光掩模的方法，其包括硬掩模材料层，其中包含其中通过最小化宏观和微载荷的影响来改善光掩模上的临界尺寸的均匀性。本发明的光掩模的制造方法包括两个蚀刻工序。第一蚀刻工艺蚀刻硬掩模层，第二蚀刻工艺蚀刻抗反射材料和不透明材料。

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