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11. 发明授权

US07958464B1 Electron beam patterning 有权
标题翻译：电子束图案化
公开(公告)号：US07958464B1
公开(公告)日：2011-06-07
申请号：US12199922
申请日：2008-08-28
申请人： Luca Grella , Allen M. Carroll
发明人： Luca Grella , Allen M. Carroll
IPC分类号： G06F17/50
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method for creating an electron beam pattern exposure, where a pattern of shapes is generated, including at least one of lines and vias. To each shape there is assigned a set of exposure pixels and edge placement constraints. An intensity at each exposure pixel is calculated by using a simplex method, and a latent resist image location is calculated by convolving a proximity function with the pixel intensities. A shape critical dimension and a shape edge slope is statistically evaluated by applying linear regression on the locations of the calculated latent image. The electron beam pattern exposures are produced using dosages linearly optimized on a rotated pixel grid to produce the shape critical dimension and the shape edge slope.
摘要翻译：一种用于产生电子束图案曝光的方法，其中产生形状图案，其包括线和通孔中的至少一个。对于每个形状，分配一组曝光像素和边缘放置约束。通过使用单纯形法计算每个曝光像素的强度，并且通过将接近函数与像素强度进行卷积来计算潜像抗蚀剂图像位置。通过对所计算的潜像的位置应用线性回归来统计评估形状临界尺寸和形状边缘斜率。使用在旋转的像素网格上线性优化的剂量产生电子束图案曝光以产生形状临界尺寸和形状边缘斜率。

12. 发明授权

US06670612B1 Undercut measurement using SEM 有权
标题翻译：使用SEM进行底切测量
公开(公告)号：US06670612B1
公开(公告)日：2003-12-30
申请号：US10186797
申请日：2002-07-01
申请人： Gian Francesco Lorusso , Luca Grella
发明人： Gian Francesco Lorusso , Luca Grella
IPC分类号： G01N23225
CPC分类号： G01N23/2251 , H01J37/28 , H01J2237/2611 , H01J2237/2815
摘要： The disclosure relates to measuring an undercut of a feature on a specimen using a scanning electron microscope (SEM). In accordance with one embodiment, a method for measuring the undercut includes illuminating the feature with a primary electron beam at an incident angle, changing the incident angle of the primary electron beam over a set of angles, measuring an intensity of scattered electrons from the feature for each incident angle in the set of angles, and determining a discontinuity in the intensities as a function of the incident angle.
摘要翻译：本公开涉及使用扫描电子显微镜（SEM）测量样品上的特征的底切。根据一个实施例，用于测量底切的方法包括以入射角以一次电子束照射该特征，改变一组电子束在一组角度上的入射角，测量来自特征的散射电子的强度对于角度集合中的每个入射角，并且确定作为入射角的函数的强度的不连续性。

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