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    • 18. 发明申请
    • Planarization Methods
    • 平面化方法
    • US20100005654A1
    • 2010-01-14
    • US12172079
    • 2008-07-11
    • David HartDavid McDonaldGuillaume BoucheSudarsan Uppili
    • David HartDavid McDonaldGuillaume BoucheSudarsan Uppili
    • H05K3/02
    • H03H3/02H03H9/175H03H9/584H03H9/589H03H2003/025Y10T29/42Y10T29/49128Y10T29/4913Y10T29/49155Y10T29/49156Y10T29/49165
    • Planarization methods for maintaining planar surfaces in the fabrication of such devices as BAW devices and capacitors on a planar or planarized substrate are described. In accordance with the method, a metal layer is deposited and patterned, and an oxide layer is deposited using a high density plasma chemical vapor deposition (HDP CVD) process to a thickness equal to the thickness of the metal layer. The HDP CVD process provides an oxide layer on the patterned metal tapering upward from the edge of the patterned metal layer. Then, after masking and etching the oxide layer from the patterned metal layer, the patterned metal layer and surrounding oxide layer form a substantially planar layer, interrupted by small remaining oxide protrusions at the edges of the patterned layer. These small remaining oxide protrusions may be too small to significantly disturb the flatness of a further oxide or other layer or they may be further mitigated by the application of another HDP CVD oxide film.
    • 描述了在平面或平面化基板上制造诸如BAW器件和电容器之类的器件的平面表面的平面化方法。 根据该方法,沉积和图案化金属层,并且使用高密度等离子体化学气相沉积(HDP CVD)工艺将氧化物层沉积到等于金属层厚度的厚度。 HDP CVD工艺在图案化金属的图案化金属层的边缘上向上逐渐变细的氧化层。 然后,在从图案化的金属层掩蔽和蚀刻氧化物层之后,图案化的金属层和周围的氧化物层形成基本平坦的层,被图案化层的边缘处的小的剩余的氧化物突起中断。 这些小的剩余氧化物突起可能太小而不能显着地扰乱另外的氧化物或其它层的平坦度,或者可以通过施加另一HDP CVD氧化物膜进一步减轻它们。