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11. 发明授权

US07592616B1 Detecting micropipes 有权
标题翻译：检测微管
公开(公告)号：US07592616B1
公开(公告)日：2009-09-22
申请号：US11563996
申请日：2006-11-28
申请人： Vamsi Velidandla
发明人： Vamsi Velidandla
IPC分类号： G01N21/88 , G01N21/86 , G01N21/00
CPC分类号： C30B29/36 , C30B25/16
摘要： An automated, non-invasive method for classifying, detecting, and counting micropipes contained within silicon wafers, and generally any assortment of transparent wafers. Classifying, detecting, and counting micropipes takes place through the use of a data processing algorithm that incorporates information regarding: defect size; pit signature; area of pit signature when comparing a topography, specular, or scatter images; and detecting a tail within the standard pit signature. The method of the present invention teaches the development of a topography defect map, specular defect map, and scatter defect map for a complete analysis of the surface of a particular transparent wafer. Conventional detection, classification, and counting of micropipes involve characterization of micropipes in a manual fashion and rely upon an extremely invasive form of sample preparation. The method disclosed in the present invention is completely automated and non-invasive with regards to the treatment of the transparent wafer to be analyzed.
摘要翻译：一种用于分类，检测和计数硅晶片内的微孔以及通常各种透明晶片的自动化非侵入性方法。通过使用包含以下信息的数据处理算法进行分类，检测和计数微孔：缺陷尺寸; 坑签名; 比较地形，镜面或散射图像时的坑签名区域; 并检测标准坑签名内的尾部。本发明的方法教导了用于完整分析特定透明晶片的表面的形貌缺陷图，镜面缺陷图和散射缺陷图。微管的常规检测，分类和计数涉及以手动方式表征微管，并且依赖于极其侵入性的样品制备形式。关于待分析透明晶片的处理，本发明公开的方法是完全自动化且非侵入性的。

12. 发明申请

US20070004061A1 Method for detecting an end-point for polishing a material 失效
标题翻译：检测材料抛光终点的方法
公开(公告)号：US20070004061A1
公开(公告)日：2007-01-04
申请号：US11173212
申请日：2005-07-01
申请人： Vamsi Velidandla
发明人： Vamsi Velidandla
IPC分类号： H01L21/66
CPC分类号： G01N21/55 , H01L22/26
摘要： An optical surface analysis system for scanning the surface of a (silicon) wafer and detect if any residual material is still on the wafer surface in order to determine an appropriate end-point in a polishing process. An Optical Surface Analyzer (OSA), of the present invention, is generally used to identify composition, measure surface area, and measure thickness variations of thin film layers of material. The difference in optical properties (index of refraction) of different materials on the surface allows the system of the present invention to separate different materials on the wafer surface using the histogram plots generated by the OSA. This method is used to detect and make a quantitative assessment regarding the amount of residual material to be removed by the polishing process and, therefore, when an appropriate end-point has been reached in the polishing process.
摘要翻译：一种用于扫描（硅）晶片表面的光学表面分析系统，并检测在晶片表面上是否还有残留材料，以确定抛光过程中适当的终点。本发明的光学表面分析仪（OSA）通常用于识别材料的薄膜层的成分，测量表面积和厚度变化。表面上不同材料的光学性质（折射率）的差异允许本发明的系统使用由OSA生成的直方图绘制在晶片表面上的不同材料。该方法用于检测并对通过抛光工艺除去的残余材料的量进行定量评估，并且因此在抛光过程中达到适当的终点时。

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