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    • 16. 发明授权
    • Apparatus and method for drying receiver media in an ink jet printer
    • 用于在喷墨打印机中干燥接收介质的装置和方法
    • US06505927B2
    • 2003-01-14
    • US09464227
    • 1999-12-15
    • Constantine N. AnagnostopoulosDavid S. RossJames M. Chwalek
    • Constantine N. AnagnostopoulosDavid S. RossJames M. Chwalek
    • B41J201
    • B41J11/002
    • An apparatus and method for drying a receiver media (30) in an ink jet printer. The apparatus generally comprises a means for creating a pressure differential between the upper surface (20) and the lower surface (50) of the receiver media (30), wherein the pressure at the lower surface (50) of the receiver media (30) is lower than the pressure at the upper surface (20) of the receiver media (30). The pressure differential-creating means may include a vacuum pump (70) adapted to generate a vacuum at the lower surface (50) of the receiver media (30) or an air pump (130) adapted to pass air currents (140) across the lower surface (50) of the receiver media (30) to cause a “Bernoulli effect”. The method generally comprises the steps of depositing ink droplets (10) onto the upper surface (20) of the receiver media (30); and creating a pressure differential between the upper surface (20) and the lower surface (50) of the receiver media (30), whereby carrier fluid contained in ink droplets (10) is drawn through the receiver media (30) from the upper surface (20) to the lower surface (50).
    • 一种用于干燥喷墨打印机中的接收介质(30)的设备和方法。 该装置通常包括用于在接收介质(30)的上表面(20)和下表面(50)之间产生压差的装置,其中接收介质(30)的下表面(50)处的压力 低于接收介质(30)的上表面(20)处的压力。 压力差产生装置可以包括适于在接收器介质(30)的下表面(50)产生真空的真空泵(70)或适于使气流(140)穿过的空气泵(130) 接收介质(30)的下表面(50)引起“伯努利效应”。 该方法通常包括以下步骤:将墨滴(10)沉积到接收介质(30)的上表面(20)上; 以及在所述接收介质(30)的所述上表面(20)和所述下表面(50)之间产生压力差,由此包含在墨滴(10)中的载体流体从所述接收介质(30)从所述上表面 (20)到所述下表面(50)。
    • 20. 发明授权
    • Full frame solid-state image sensor with altered accumulation potential
and method for forming same
    • 具有改变积累电位的全帧固态图像传感器及其形成方法
    • US5612555A
    • 1997-03-18
    • US408370
    • 1995-03-22
    • Constantine N. Anagnostopoulos
    • Constantine N. Anagnostopoulos
    • H01L27/148H01L29/423H01L31/0216H01L29/768H01L29/792
    • H01L31/02161H01L27/14831H01L29/42396
    • In accordance with the invention, a full frame solid-state image sensor of altered accumulation potential comprises a substrate that includes a semiconductor of one conductivity type and has a surface at which is situated a photodetector that comprises a first storage area and a second storage area. The first and second storage areas each comprise a CCD channel of conductivity type opposite to the conductivity type of the semiconductor. A first barrier region separates the first storage area from the second storage area, and a second barrier region separates the second storage area from an adjacent photodetector; the second barrier region is shallower than the first barrier region. Adjacent to one side of the photodetector is a channel stop of the same conductivity type as the semiconductor. A first gate and a second gate each comprising a conductive layer overlie the CCD channel, and positioned between the channel and the conductive layer is an O--N--O dielectric that comprises a first silicon dioxide layer and a second silicon dioxide layer and a silicon nitride layer interposed between the silicon dioxide layers. The silicon nitride layer comprises a trapped electric charge sufficient to alter the accumulation potential by 3 to 4 volts; the trapped electric charge is injected into the silicon nitride layer by applying a stress potential to the first and second gates. Also in accordance with the invention, the silicon nitride layer may be heated simultaneously with the application of the stress potential to the gates.
    • 根据本发明,具有改变的累积电位的全帧固态图像传感器包括:衬底,其包括一种导电类型的半导体,并且其表面位于包括第一存储区域和第二存储区域的光电检测器 。 第一和第二存储区域各自包括与半导体的导电类型相反的导电类型的CCD通道。 第一屏障区域将第一存储区域与第二存储区域分开,并且第二屏障区域将第二存储区域与相邻的光电检测器分离; 所述第二阻挡区域比所述第一阻挡区域浅。 与光电检测器的一侧相邻的是具有与半导体相同导电类型的通道阻挡。 每个包括导电层的第一栅极和第二栅极覆盖在CCD沟道上,并且位于沟道和导电层之间的是一个ONO电介质,其包括第一二氧化硅层和第二二氧化硅层以及介于 二氧化硅层。 氮化硅层包括足以将累积电位改变3至4伏特的俘获电荷; 通过向第一和第二栅极施加应力电势将捕获的电荷注入到氮化硅层中。 同样根据本发明,氮化硅层可以同时施加到栅极的应力电位。