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    • 12. 发明申请
    • Organic Light-Emitting Display Device and Method of Manufacturing the Same
    • 有机发光显示装置及其制造方法
    • US20120146030A1
    • 2012-06-14
    • US13205846
    • 2011-08-09
    • Chun-Gi YouJoon-Hoo Choi
    • Chun-Gi YouJoon-Hoo Choi
    • H01L29/786
    • H01L27/1255H01L27/124H01L27/3248H01L27/3279H01L29/4908H01L2227/323
    • An organic light-emitting display device is manufactured via a simple process and has an improved aperture ratio. The organic light-emitting display device comprising: a substrate; an auxiliary electrode formed on the substrate; a thin film transistor (TFT) formed on the auxiliary electrode, the TFT comprising an active layer, a gate electrode, a source electrode and a drain electrode; an organic electroluminescent (EL) device electrically connected to the TFT and formed by sequentially stacking a pixel electrode formed on the same layer by using the same material as portions of the source and drain electrodes, an intermediate layer comprising an organic light emission layer (EML), and an opposite electrode disposed to face the pixel electrode; and a contact electrode formed on the same layer by a predetermined distance by using the same material as the source and drain electrodes, and electrically connecting the auxiliary electrode and the opposite electrode.
    • 通过简单的工艺制造有机发光显示装置,并且具有改善的开口率。 所述有机发光显示装置包括:基板; 形成在基板上的辅助电极; 形成在辅助电极上的薄膜晶体管(TFT),所述TFT包括有源层,栅电极,源电极和漏电极; 电连接到TFT并通过使用与源极和漏极的部分相同的材料依次层叠形成在同一层上的像素电极而形成的有机电致发光(EL)器件,包括有机发光层(EML)的中间层 )和设置成面对像素电极的相对电极; 以及通过使用与源电极和漏电极相同的材料在同一层上形成预定距离的接触电极,以及电连接辅助电极和相对电极。
    • 13. 发明申请
    • Organic Light Emitting Display Device and Method of Manufacturing the Same
    • 有机发光显示装置及其制造方法
    • US20120049191A1
    • 2012-03-01
    • US13082553
    • 2011-04-08
    • Chun-Gi YouJoon-Hoo Choi
    • Chun-Gi YouJoon-Hoo Choi
    • H01L33/16H01L33/46H01L33/08
    • H01L27/1288H01L27/1214H01L27/1255H01L27/3248H01L51/5215H01L51/5218H01L51/5265
    • In an organic light emitting display device and a method of manufacturing the same, the organic light emitting display device comprises: an active layer of a thin film transistor, which is formed on a substrate; a gate electrode formed on the active layer and a first insulating layer, and including a first transparent conductive layer and a first metal layer; source and drain electrodes formed on the gate electrode and a second insulating layer, and including a second metal layer connected to the active layer through a contact hole formed in the second insulating layer, a third metal layer formed on the second metal layer, and a second transparent conductive layer formed on the third metal layer; a pixel electrode formed on the first insulating layer, and including the first transparent conductive layer, the third metal layer, and the second transparent conductive layer; an intermediate layer disposed on the pixel electrode, and including an organic emission layer; and a counter electrode disposed so as to face the pixel electrode by disposing the intermediate layer between the pixel electrode and the counter electrode.
    • 在有机发光显示装置及其制造方法中,有机发光显示装置包括:形成在基板上的薄膜晶体管的有源层; 形成在有源层上的栅电极和第一绝缘层,并且包括第一透明导电层和第一金属层; 形成在栅电极上的源电极和漏电极和第二绝缘层,并且包括通过形成在第二绝缘层中的接触孔连接到有源层的第二金属层,形成在第二金属层上的第三金属层,以及 形成在第三金属层上的第二透明导电层; 形成在所述第一绝缘层上并且包括所述第一透明导电层,所述第三金属层和所述第二透明导电层的像素电极; 中间层,设置在所述像素电极上,并且包括有机发射层; 以及通过将中间层设置在像素电极和对置电极之间而配置成面对像素电极的对置电极。
    • 14. 发明申请
    • ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 有机发光显示装置及其制造方法
    • US20110309339A1
    • 2011-12-22
    • US13080405
    • 2011-04-05
    • Chun-Gi YouJoon-Hoo Choi
    • Chun-Gi YouJoon-Hoo Choi
    • H01L27/32H01L51/56H01L51/52
    • H01L51/5218H01L27/1248H01L27/1288H01L27/3248H01L51/5265
    • An organic light-emitting display device includes an active layer of a thin film transistor arranged on a substrate, a first insulating layer and a gate electrode arranged on the active layer, the gate electrode including a first transparent conductive layer and a first metal layer, a second insulating layer arranged on the gate electrode and including a plurality of contact holes that expose a source region and a drain region of the active layer, a reflective layer and a second transparent conductive layer arranged within the contact holes, a source electrode and a drain electrode arranged on the second transparent conductive layer and on the second insulating layer, the source electrode and the drain electrode each including a second metal layer, a pixel electrode arranged on the first insulating layer, the pixel electrode including the first transparent conductive layer, the reflective layer, and the second transparent conductive layer, an intermediate layer arranged on the pixel electrode and including an organic emission layer and an opposite electrode facing the pixel electrode, wherein the intermediate layer is arranged between the pixel electrode and the opposite electrode.
    • 有机发光显示装置包括布置在基板上的薄膜晶体管的有源层,布置在有源层上的第一绝缘层和栅极,所述栅电极包括第一透明导电层和第一金属层, 布置在所述栅电极上并且包括暴露所述有源层的源区和漏区的多个接触孔,布置在所述接触孔内的反射层和第二透明导电层的第二绝缘层,源电极和 漏电极,设置在第二透明导电层上,在第二绝缘层上,源极和漏极各自包括第二金属层,设置在第一绝缘层上的像素电极,包括第一透明导电层的像素电极, 反射层和第二透明导电层,布置在像素el上的中间层 并且包括有机发射层和面对像素电极的相对电极,其中中间层布置在像素电极和相对电极之间。
    • 17. 发明授权
    • Organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus
    • 有机发光显示装置及制造有机发光显示装置的方法
    • US08952386B2
    • 2015-02-10
    • US13592508
    • 2012-08-23
    • Chun-Gi YouJoon-Hoo Choi
    • Chun-Gi YouJoon-Hoo Choi
    • H01L29/12
    • H01L27/3276H01L27/1244H01L2227/323
    • An OLED apparatus including a thin film transistor including an activation layer, a gate electrode insulated from the activation layer and including a lower gate electrode and an upper gate electrode, an interlayer insulation film covering the gate electrode, and a source and drain electrode on the insulation film and contacting the activation layer; an OLED including a pixel electrode electrically connected to the thin film transistor, an intermediate layer including an emissive layer, and an opposite electrode; a blister prevention layer on a same level as the activation layer; a gate insulation layer covering the activation layer and the blister prevention layer and insulating the activation layer from the gate electrode; and an interconnection unit including first and second layers on a portion of the gate insulation layer overlying the blister prevention layer, wherein the blister prevention layer protects the interconnection unit on the gate insulation layer from blistering.
    • 一种OLED装置,包括:薄膜晶体管,其包括激活层,与所述激活层绝缘并且包括下栅电极和上栅电极的栅电极,覆盖所述栅电极的层间绝缘膜以及所述栅极电极和漏电极 绝缘膜并与活化层接触; 包括与薄膜晶体管电连接的像素电极的OLED,包括发光层的中间层和相对电极; 与激活层在同一水平上的防泡层; 覆盖所述活化层和所述起泡防止层并将所述活化层与所述栅电极绝缘的栅极绝缘层; 以及互连单元,其包括覆盖在防泡层上的栅极绝缘层的一部分上的第一层和第二层,其中防泡层保护栅极绝缘层上的互连单元不起泡。
    • 18. 发明授权
    • Thin film transistor array substrate, organic light emitting display device comprising the same, and method of manufacturing the same
    • 薄膜晶体管阵列基板,包括该薄膜晶体管阵列基板的有机发光显示装置及其制造方法
    • US08872165B2
    • 2014-10-28
    • US13480746
    • 2012-05-25
    • Chun-Gi YouJoon-Hoo Choi
    • Chun-Gi YouJoon-Hoo Choi
    • H01L29/15H01L35/24H01L27/12H01L51/52H01L27/32
    • H01L27/1255H01L27/124H01L27/3248H01L27/326H01L27/3276H01L51/5206H01L51/5215H01L2227/323
    • A thin film transistor array substrate includes a thin film transistor including an activation layer, a gate electrode, source and drain electrodes, a first insulation layer between the activation layer and the gate electrode, and a second insulation layer between the gate electrode and the source and drain electrodes, a pixel electrode including a transparent conductive oxide, the pixel electrode being on a portion of the first insulation layer extending from the thin film transistor and being connected to one of the source and drain electrodes via an opening in the second insulation layer, a capacitor including a first electrode and a second electrode, the first electrode being on a same layer as the activation layer and including a transparent conductive oxide, and the second electrode being between the first and second insulation layers, and a third insulation layer covering the source and drain electrodes and exposing the pixel electrode.
    • 薄膜晶体管阵列基板包括薄膜晶体管,其包括激活层,栅电极,源极和漏极,激活层和栅电极之间的第一绝缘层,以及栅电极和源极之间的第二绝缘层 和漏电极,包括透明导电氧化物的像素电极,所述像素电极在所述第一绝缘层的从所述薄膜晶体管延伸的部分上并且经由所述第二绝缘层中的开口连接到所述源极和漏极之一 包括第一电极和第二电极的电容器,所述第一电极位于与所述活化层相同的层上并且包括透明导电氧化物,所述第二电极位于所述第一绝缘层和所述第二绝缘层之间,并且所述第三绝缘层覆盖 源电极和漏极,并暴露像素电极。