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11. 发明授权

US06462390B1 Multi-film capping layer for a salicide process 有权
标题翻译：用于自杀过程的多层覆盖层
公开(公告)号：US06462390B1
公开(公告)日：2002-10-08
申请号：US09672234
申请日：2000-09-27
申请人： Ming-Shing Chen , Shu-Jen Chen , Jy-Hwang Lin , Kuen-Syh Tseng
发明人： Ming-Shing Chen , Shu-Jen Chen , Jy-Hwang Lin , Kuen-Syh Tseng
IPC分类号： H01L21336
CPC分类号： H01L29/665 , H01L21/28044 , H01L29/4933
摘要： A multi-film capping layer having a cobalt layer, a barrier layer, and a stuffing layer is disclosed, wherein the barrier layer isolates the cobalt layer from the stuffing layer. The multi-film capping layer is formed on a gate transistor and applicable to a self-aligned silicide (salicide) process, so that a sheet resistance of the salicide layer on conductive regions of the gate transistor is significantly reduced. The stuffing layer further prevents entry of oxygen or moisture to the salicide layer, thus no cobalt oxide is formed when RTP is performed. Without formation of the cobalt oxide, the salicide process is free from the bridging issue and the filament issue.
摘要翻译：公开了具有钴层，阻挡层和填充层的多层覆盖层，其中阻挡层将钴层与填料层隔离。多层覆盖层形成在栅极晶体管上并且可应用于自对准硅化物（自对准硅化物）工艺，使得栅极晶体管的导电区域上的自对准硅化物层的薄层电阻显着降低。填充层进一步防止氧化物或水分进入自对准硅化物层，因此在进行RTP时不会形成氧化钴。不形成氧化钴，自对准硅化物工艺没有桥接问题和灯丝问题。

12. 发明申请

US20070049009A1 METHOD OF MANUFACTURING CONDUCTIVE LAYER 审中-公开
标题翻译：制造导电层的方法
公开(公告)号：US20070049009A1
公开(公告)日：2007-03-01
申请号：US11162119
申请日：2005-08-30
申请人： Chia-Lin Hsu , Liang-Yuan Fang , Shu-Jen Chen
发明人： Chia-Lin Hsu , Liang-Yuan Fang , Shu-Jen Chen
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76849 , H01L21/02068 , H01L21/02074 , H01L21/76861
摘要： A method of manufacturing a conductive layer is described. A substrate having a dielectric layer thereon is provided. The dielectric layer has a patterned structure and the patterned structure exposes a portion of the conductive layer. The surface of the substrate is cleaned in a first cleaning step and a cap layer is formed over the exposed portion of the conductive layer. Thereafter, the surface of the substrate is cleaned again in a second cleaning step to remove the residual cap layer on the surface of the dielectric layer. Finally, a dry cleaning step is performed to clean and dry the surface of the substrate.
摘要翻译：对导电层的制造方法进行说明。提供其上具有介电层的基板。介电层具有图案化结构，并且图案化结构暴露导电层的一部分。在第一清洁步骤中清洁基板的表面，并且在导电层的暴露部分上形成盖层。此后，在第二清洁步骤中再次清洁基板的表面，以去除介电层表面上的剩余盖层。最后，进行干洗步骤以清洁和干燥基材的表面。

13. 发明申请

US20060110917A1 Method of metallization in the fabrication of integrated circuit devices 审中-公开
标题翻译：集成电路器件制造中的金属化方法
公开(公告)号：US20060110917A1
公开(公告)日：2006-05-25
申请号：US11163055
申请日：2005-10-03
申请人： Shu-Jen Chen , Chia-Lin Hsu , Kun-Hsien Lin
发明人： Shu-Jen Chen , Chia-Lin Hsu , Kun-Hsien Lin
IPC分类号： H01L21/44
CPC分类号： H01L21/7684 , H01L21/76877
摘要： The method of metallization in the fabrication of an integrated circuit device comprises the steps as follows. First, a dielectric layer overlying a semiconductor substrate is provided. The dielectric layer has a top surface and a plurality of openings. Next, a metal layer is formed on the dielectric layer and filling the openings. Subsequently, a first removing process is performed to partially removing the metal layer. A first annealing process is performed on the metal layer. Finally, a second removing process is performed to remove the metal layer completely to leave the metal layer only within the openings.
摘要翻译：集成电路器件制造中的金属化方法包括以下步骤。首先，提供覆盖在半导体衬底上的电介质层。电介质层具有顶表面和多个开口。接下来，在电介质层上形成金属层并填充开口。随后，执行第一去除处理以部分地去除金属层。在金属层上进行第一退火处理。最后，进行第二次去除处理，以完全去除金属层，仅将金属层留在开口内。

14. 发明授权

US06738256B2 Heat sink attached externally on bottom portion of portable computer 失效
标题翻译：散热器外部附着在便携式计算机的底部
公开(公告)号：US06738256B2
公开(公告)日：2004-05-18
申请号：US10237694
申请日：2002-09-10
申请人： Chen-Huang Hsieh , Shu-Jen Chen
发明人： Chen-Huang Hsieh , Shu-Jen Chen
IPC分类号： G06F120
CPC分类号： G06F1/203
摘要： A heat sink attached externally on a bottom portion of a portable computer has the heat sink placed at a rear lower aspect of the portable computer; the present invention is characterized that the heat sink is a flat casing; at least one fan is installed inside the heat sink; an air inlet is disposed at the upper aspect of the fan; an air outlet is disposed at the front aspect of a bearing plate on the front aspect of the fan; a current guide board is disposed at the lower aspect of the fan; according to the abovementioned structure, when being used, the air current enters from the air inlet and discharges outwardly from the air outlet thereby allowing the cooling air current to enter from the bottom portion of the portable computer for heat dissipation.
摘要翻译：在便携式计算机的底部外部附接的散热器具有放置在便携式计算机的后部下方的散热器; 本发明的特征在于散热器是平的壳体; 至少一个风扇安装在散热器的内部; 空气入口设置在风扇的上方; 在风扇的前方的轴承板的前方配置有排气口，电流引导板设置在风扇的下方; 根据上述结构，当使用时，气流从空气入口进入并从空气出口向外排出，从而允许冷却气流从便携式计算机的底部进入以进行散热。

15. 发明授权

US06218294B1 Method of manufacturing interconnect 失效
标题翻译：制造互连的方法
公开(公告)号：US06218294B1
公开(公告)日：2001-04-17
申请号：US09293420
申请日：1999-04-16
申请人： Chien-Chih Lin , Shu-Jen Chen , William Lu
发明人： Chien-Chih Lin , Shu-Jen Chen , William Lu
IPC分类号： H01L2144
CPC分类号： H01L21/76819 , H01L21/76802
摘要： A method of manufacturing an interconnect. A first conductive layer is formed on the wafer. Portions of the first conductive layer are removed to form a wire in the interior region and to expose the surface of the wafer in the edge region, simultaneously. An insulating layer is formed on the wire and the wafer. An opening is formed to penetrate through the insulating layer and exposes the wire. A second conductive layer is formed on the insulating layer and fills the opening.
摘要翻译：制造互连的方法。在晶片上形成第一导电层。第一导电层的部分被去除以在内部区域中形成导线并且同时在边缘区域中暴露晶片的表面。在导线和晶片上形成绝缘层。形成开口以穿透绝缘层并使线暴露。在绝缘层上形成第二导电层并填充开口。

16. 发明申请

US20130023033A1 PHARMACOLOGICALLY INDUCED TRANSGENE ABLATION SYSTEM 审中-公开
标题翻译：药理学诱导转基因系统
公开(公告)号：US20130023033A1
公开(公告)日：2013-01-24
申请号：US13638015
申请日：2011-03-28
申请人： James M. Wilson , Shu-Jen Chen , Anna P. Tretiakova
发明人： James M. Wilson , Shu-Jen Chen , Anna P. Tretiakova
IPC分类号： C12N7/01 , C12N5/10 , C12N1/21 , C12N15/63
CPC分类号： C12N15/86 , A61K48/0066 , C07K2319/715 , C07K2319/80 , C12N9/22 , C12N2750/14143 , C12N2800/30 , C12N2800/80 , C12N2830/002 , C12N2830/003 , C12N2830/005 , C12N2830/006 , C12N2830/20 , C12N2840/203
摘要： The present invention relates to gene therapy systems designed for the delivery of a therapeutic product to a subject using replication-defective virus composition(s) engineered with a built-in safety mechanism for ablating the therapeutic gene product, either permanently or temporarily, in response to a pharmacological agent—preferably an oral formulation, e.g., a pill. The invention is based, in part, on the applicants' development of an integrated approach, referred to herein as “PITA” (Pharmacologically Induced Transgene Ablation), for ablating a transgene or negatively regulating transgene expression. In this approach, replication-deficient viruses are used to deliver a transgene encoding a therapeutic product (an RNA or a protein) so that it is expressed in the subject, but can be reversibly or irreversibly turned off by administering the pharmacological agent; e.g., by administration of a small molecule that induces expression of an ablator specific for the transgene or its RNA transcript.
摘要翻译：本发明涉及基因治疗系统，其被设计用于使用使用内置安全机制工程改造的复制缺陷病毒组合物将治疗产品递送给受试者，所述安全机制永久地或临时地用于消融治疗性基因产物药物剂 - 优选口服制剂，例如丸剂。本发明部分地基于申请人开发综合方法，本文称为PITA（药理学诱导的转基因消融），用于消融转基因或负调节转基因表达。在这种方法中，使用复制缺陷病毒递送编码治疗产物（RNA或蛋白质）的转基因，使其在受试者中表达，但是可以通过施用药理学试剂来逆转或不可逆地关闭; 例如通过施用诱导特异于转基因或其RNA转录物的消融体表达的小分子。

17. 发明申请

US20090143302A1 PYRIMIDINE COMPOUNDS 有权
标题翻译：吡嗪化合物
公开(公告)号：US20090143302A1
公开(公告)日：2009-06-04
申请号：US12330132
申请日：2008-12-08
申请人： Chi-Feng Yen , Cheng-Kung Hu , Ming-Chen Chou , Chen-Tso Tseng , Chien-Huang Wu , Ying-Huey Huang , Shu-Jen Chen , Chi-Hsin Richard King
发明人： Chi-Feng Yen , Cheng-Kung Hu , Ming-Chen Chou , Chen-Tso Tseng , Chien-Huang Wu , Ying-Huey Huang , Shu-Jen Chen , Chi-Hsin Richard King
IPC分类号： A61K38/18 , A61K31/55 , A61K31/505 , A61P7/00 , A61K31/506
CPC分类号： A61K31/506 , A61K31/5377 , A61K31/55 , A61K38/193 , A61K2300/00
摘要： This invention relates to a method for treating inflammatory diseases or immune diseases, developmental or degenerative diseases, or tissue injuries. The method includes administering to a subject in need thereof an effective amount of one or more compounds of formula (I). Each variable in this formula is defined in the specification.
摘要翻译：本发明涉及一种治疗炎性疾病或免疫疾病，发育或退行性疾病或组织损伤的方法。该方法包括向有需要的受试者施用有效量的一种或多种式（I）化合物。该公式中的每个变量在规范中定义。

18. 发明申请

US20060293324A1 Pyrimidine compounds 有权
公开(公告)号：US20060293324A1
公开(公告)日：2006-12-28
申请号：US11451771
申请日：2006-06-13
申请人： Chi-Feng Yen , Cheng-Kung Hu , Ming-Chen Chou , Chen-Tso Tseng , Chien-Huang Wu , Ying-Huey Huang , Shu-Jen Chen , Chi-Hsin King
发明人： Chi-Feng Yen , Cheng-Kung Hu , Ming-Chen Chou , Chen-Tso Tseng , Chien-Huang Wu , Ying-Huey Huang , Shu-Jen Chen , Chi-Hsin King
IPC分类号： A61K31/5377 , A61K31/506 , C07D413/14 , C07D403/02
CPC分类号： C07D239/48 , A61K31/506 , A61K31/5377 , A61K31/55 , A61K38/193 , C07D239/42 , C07D239/50 , C07D401/04 , C07D401/12 , C07D401/14 , C07D403/04 , C07D403/12 , C07D403/14 , C07D405/12 , C07D409/12 , A61K2300/00
摘要： This invention relates to a method for treating inflammatory diseases or immune diseases, developmental or degenerative diseases, or tissue injuries. The method includes administering to a subject in need thereof an effective amount of one or more compounds of formula (I). Each variable in this formula is defined in the specification.

19. 发明申请

US20060281712A1 Pyrimidine compounds 审中-公开
公开(公告)号：US20060281712A1
公开(公告)日：2006-12-14
申请号：US11451897
申请日：2006-06-13
申请人： Chi-Feng Yen , Cheng-Kung Hu , Ming-Chen Chou , Chen-Tso Tseng , Chien-Huang Wu , Ying-Huey Huang , Shu-Jen Chen , Chi-Hsin King
发明人： Chi-Feng Yen , Cheng-Kung Hu , Ming-Chen Chou , Chen-Tso Tseng , Chien-Huang Wu , Ying-Huey Huang , Shu-Jen Chen , Chi-Hsin King
IPC分类号： A61K38/19 , A61K31/55 , A61K31/5377 , A61K31/506 , A61K31/675
CPC分类号： C07D239/48 , A61K31/506 , A61K31/5377 , A61K31/55 , A61K38/193 , C07D239/42 , C07D239/50 , C07D401/04 , C07D401/12 , C07D401/14 , C07D403/04 , C07D403/12 , C07D403/14 , C07D405/12 , C07D409/12 , A61K2300/00
摘要： This invention relates to a method for treating inflammatory diseases or immune diseases, developmental or degenerative diseases, or tissue injuries. The method includes administering to a subject in need thereof an effective amount of one or more compounds of formula (I). Each variable in this formula is defined in the specification.

20. 发明申请

US20060128146A1 METHOD OF FORMING BARRIER LAYER AND METHOD OF FABRICATING INTERCONNECT 审中-公开
标题翻译：形成障碍层的方法和制作互连的方法
公开(公告)号：US20060128146A1
公开(公告)日：2006-06-15
申请号：US11163435
申请日：2005-10-19
申请人： Chia-Lin Hsu , Shu-Jen Chen , Jih-Cheng Yeh , Chih-Chiang Wu
发明人： Chia-Lin Hsu , Shu-Jen Chen , Jih-Cheng Yeh , Chih-Chiang Wu
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , H01L21/76843
摘要： A method of fabricating a barrier layer is described. A material layer having an opening formed therein is provided. Then, the material layer is disposed inside a physical vapor deposition chamber and a first deposition process is performed to form a first barrier layer on the surface of the opening. The first deposition process includes turning on a plasma source and turning off the plasma source. The turning on of the plasma source and the turning off of the plasma source are separated from each other by an interval less than 2 seconds. Thereafter, the first deposition process is repeated several times to form a second barrier layer comprising a plurality of first barrier layers.
摘要翻译：描述制造阻挡层的方法。提供其中形成有开口的材料层。然后，将材料层设置在物理气相沉积室内部，并执行第一沉积工艺以在开口的表面上形成第一阻挡层。第一沉积工艺包括打开等离子体源并关闭等离子体源。等离子体源的导通和等离子体源的关闭彼此间隔小于2秒的间隔。此后，重复多次第一沉积工艺以形成包括多个第一阻挡层的第二阻挡层。

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