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    • 19. 发明申请
    • Field programmable memory repair for eprom
    • 用于eprom的现场可编程存储器修复
    • US20070104000A1
    • 2007-05-10
    • US11589164
    • 2006-10-30
    • Qing LinKiran Dasoju
    • Qing LinKiran Dasoju
    • G11C29/00
    • G11C29/027G11C29/72
    • The present invention according to certain embodiments is directed to a method, device and apparatus for repairing a plurality of memory locations. The present invention includes providing a plurality of memory locations, providing a plurality of fuses coupled to the memory locations and loading fuse data into a data register from a plurality of read-only memory (ROM) devices thereby creating loaded fuse data. The present invention also provides loading a programming sequence of the memory device, wherein the programming sequence includes a plurality of memory addresses, and reading the loaded fuse data from the fuse register to a plurality of memory locations corresponding to the plurality of memory addresses.
    • 根据某些实施例的本发明涉及用于修复多个存储器位置的方法,装置和装置。 本发明包括提供多个存储器位置,提供耦合到存储器位置的多个熔丝,并将熔丝数据从多个只读存储器(ROM)器件加载到数据寄存器中,从而产生加载的熔丝数据。 本发明还提供加载存储器件的编程序列,其中编程序列包括多个存储器地址,并将加载的熔丝数据从熔丝寄存器读取到对应于多个存储器地址的多个存储单元。