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11. 发明授权

US06985806B2 Method for determining an estimated value of a mass flow in the intake channel of an internal combustion engine 失效
标题翻译：用于确定内燃机的进气通道中的质量流量的估计值的方法
公开(公告)号：US06985806B2
公开(公告)日：2006-01-10
申请号：US10624416
申请日：2003-07-22
申请人： Wolfgang Stadler
发明人： Wolfgang Stadler
IPC分类号： F02D41/02
CPC分类号： F02D41/18 , F02D41/0072 , F02D41/1401 , F02D2200/0402 , F02D2200/0406 , F02D2200/0408
摘要： A measured value (MAP_MES) of the pressure in a suction pipe is the command variable of a control loop. The regulating variable is an estimated value (MAP_EST) of the pressure in the suction pipe, the estimated value being determined according to the manipulated variable of the control loop. The manipulated variable is calculated according to the difference between the estimated value (MAP_EST) and a measured value (MAP_MES) of the pressure in the suction pipe and according to the temporal change of the measured value (MAP_MES) of the pressure in the suction pipe. An estimated value (MAF_EST) of the mass flow in the intake passage (1) is calculated according to the manipulated variable.
摘要翻译：吸入管中的压力的测量值（MAP_MES）是控制回路的指令变量。调节变量是吸入管中的压力的估计值（MAP_EST），该估计值根据控制回路的操作变量来确定。根据估计值（MAP_EST）与吸入管内压力的测量值（MAP_MES）之间的差值，根据吸入管内压力的测量值（MAP_MES）的时间变化计算操纵变量。根据操作量计算进气通道（1）中的质量流量的估计值（MAF_EST）。

12. 发明申请

US20050285199A1 Method for producing a semiconductor circuit, and corresponding semiconductor circuit 审中-公开
标题翻译：半导体电路的制造方法以及对应的半导体电路
公开(公告)号：US20050285199A1
公开(公告)日：2005-12-29
申请号：US11137691
申请日：2005-05-25
申请人： Wolfgang Stadler , Werner Ertle , Bernd Goller , Michael Horn , Manfred Hermann , Giuseppe Miccoli
发明人： Wolfgang Stadler , Werner Ertle , Bernd Goller , Michael Horn , Manfred Hermann , Giuseppe Miccoli
IPC分类号： H01L21/60 , H01L23/485 , H01L23/50 , H01L23/62
CPC分类号： H01L24/05 , H01L23/562 , H01L24/03 , H01L2224/02166 , H01L2224/05624 , H01L2924/01005 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/30105 , H01L2924/00014
摘要： A semiconductor circuit containing a pad for electrical bonding of the semiconductor circuit and a metal arrangement disposed beneath the pad. The metal arrangement is in a metal layer of the semiconductor circuit located closest to the pad and is electrically insulated from the pad and from a strip conductor located beneath the metal arrangement. More than one metal layer can contain a metal arrangement. Each metal arrangement is a full-area plate that overlaps all edges of the pad or has a regular structure of small square plates. If adjacent metal arrangements are constructed from small plates, the plates in one metal arrangement overlap to cover gaps in the other metal arrangement.
摘要翻译：一种半导体电路，包括用于半导体电路的电接合的焊盘和设置在焊盘下方的金属布置。金属布置在最靠近焊盘的半导体电路的金属层中，并且与焊盘和位于金属布置下方的带状导体电绝缘。多于一个金属层可以包含金属布置。每个金属布置是与面板的所有边缘重叠或具有小方块的规则结构的全区域板。如果相邻的金属布置由小板构成，则一个金属布置中的板重叠以覆盖另一金属布置中的间隙。

13. 发明授权

US06930501B2 Method for determining an ESD/latch-up strength of an integrated circuit 失效
公开(公告)号：US06930501B2
公开(公告)日：2005-08-16
申请号：US10866863
申请日：2004-06-14
申请人： Silke Bargstädt-Franke , Kai Esmark , Harald Gossner , Philipp Riess , Wolfgang Stadler , Martin Streibl , Martin Wendel
发明人： Silke Bargstädt-Franke , Kai Esmark , Harald Gossner , Philipp Riess , Wolfgang Stadler , Martin Streibl , Martin Wendel
IPC分类号： H01L23/544 , H01L23/60 , G01R31/26
CPC分类号： H01L22/34 , H01L23/60 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method for determining an ESD/latch-up strength of an integrated circuit includes producing an integrated circuit and a test structure using the same fabrication process. Electrical parameters at the test structure are measured and characteristic values associated with the integrated circuit are derived from the measured parameter values, wherein the characteristic values characterize an ESD or latch-up characteristic curve associated with the integrated circuit. The method further includes testing whether the characteristic values in each case lie within a predetermined range assigned to them, wherein the ranges are chosen such that a desired ESD/latch-up strength is present if the characteristic values in each case lie within their range.

14. 发明授权

US07190077B2 Semiconductor structure integrated under a pad 有权
标题翻译：半导体结构集成在一个垫下
公开(公告)号：US07190077B2
公开(公告)日：2007-03-13
申请号：US10519860
申请日：2003-06-12
申请人： Robert Bauer , Werner Ertle , Till Frohnmüller , Bernd Goller , Reinhard Greiderer , Oliver Nagler , Olaf Schmeckebier , Wolfgang Stadler
发明人： Robert Bauer , Werner Ertle , Till Frohnmüller , Bernd Goller , Reinhard Greiderer , Oliver Nagler , Olaf Schmeckebier , Wolfgang Stadler
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05556 , H01L2224/056 , H01L2224/05684 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/13091 , H01L2924/19043 , H01L2924/3025 , H01L2924/00
摘要： An integrated semiconductor structure has a substrate, a semiconductor element located on the substrate, a pad metal, metal layers located between the pad metal and the substrate, and insulation layers that separate the metal layers from one another. The pad metal extends over at least—part of the semiconductor element.Below the surface of the pad metal, at least the top two metal layers include two or more adjacent interconnects.
摘要翻译：集成半导体结构具有衬底，位于衬底上的半导体元件，焊盘金属，位于焊盘金属和衬底之间的金属层以及将金属层彼此分离的绝缘层。焊盘金属在半导体元件的至少一部分上延伸。在焊盘金属的表面下方，至少顶部的两个金属层包括两个或更多相邻的互连。

15. 发明申请

US20060243244A1 Method for diagnosis of a volume flow control valve in an internal combustion engine comprising a high-pressure accumulator injection system 有权
标题翻译：用于诊断包括高压蓄能器注射系统的内燃机中的体积流量控制阀的方法
公开(公告)号：US20060243244A1
公开(公告)日：2006-11-02
申请号：US10527976
申请日：2004-05-13
申请人： Dr. Michael Käsbauer , Wolfgang Stadler
发明人： Dr. Michael Käsbauer , Wolfgang Stadler
IPC分类号： F02D31/00 , F02M59/36 , F02M63/00 , G06F19/00
CPC分类号： F02D41/221 , F02D41/123 , F02D41/3809 , F02D2200/0602 , F02D2200/501
摘要： The invention relates to an internal combustion engine comprising a high-pressure accumulator injection system wherein the swept volume and the pressure are regulated by means of a volume flow control valve (VCV) and a pressure control valve (PCV). The inventive method consists in checking, during the overrun condition of the internal combustion engine, whether predetermined release conditions for carrying out the diagnosis are fulfilled, and in the event of a positive result, the control valve (VCV) is closed for a predetermined period of time (t1). During said period (t1), values relating to fuel pressure (FUP) are detected by means of the pressure sensor (21) and compared with a predetermined threshold value (FUP-SW), the control valve (VCV) being deemed faultless if said fuel pressure (FUP) values are sufficiently often below the threshold value (FUP_SW) during the cited period of time (t1).
摘要翻译：本发明涉及一种内燃机，其包括高压蓄能器喷射系统，其中扫气体积和压力通过体积流量控制阀（VCV）和压力控制阀（PCV）来调节。本发明的方法在于，在内燃机的超速状态期间，检查是否满足了用于执行诊断的预定释放条件，并且在积极结果的情况下，控制阀（VCV）关闭预定时段的时间（t 1）。在所述时段（t 1）期间，通过压力传感器（21）检测与燃料压力（FUP）相关的值，并与预定的阀值（FUP-SW）进行比较，如果控制阀（VCV）所述燃料压力（FUP）值在引用的时间段（t 1）期间足够经常低于阈值（FUP_SW）。

16. 发明申请

US20050242374A1 Semiconductor structure integrated under a pad 有权
标题翻译：半导体结构集成在一个垫下
公开(公告)号：US20050242374A1
公开(公告)日：2005-11-03
申请号：US10519860
申请日：2003-06-12
申请人： Robert Bauer , Werner Ertle , Till Frohnmuller , Bernd Goller , Reinhard Greiderer , Oliver Nagler , Olaf Schmeckebier , Wolfgang Stadler
发明人： Robert Bauer , Werner Ertle , Till Frohnmuller , Bernd Goller , Reinhard Greiderer , Oliver Nagler , Olaf Schmeckebier , Wolfgang Stadler
IPC分类号： H01L23/485 , H01L31/0336
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05556 , H01L2224/056 , H01L2224/05684 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/13091 , H01L2924/19043 , H01L2924/3025 , H01L2924/00
摘要： An integrated semiconductor structure has a substrate, a semiconductor element located on the substrate, a pad metal, metal layers located between the pad metal and the substrate, and insulation layers that separate the metal layers from one another. The pad metal extends over at least -part of the semiconductor element. Below the surface of the pad metal, at least the top two metal layers include two or more adjacent interconnects.
摘要翻译：集成半导体结构具有衬底，位于衬底上的半导体元件，焊盘金属，位于焊盘金属和衬底之间的金属层以及将金属层彼此分离的绝缘层。焊盘金属在半导体元件的至少一部分上延伸。在焊盘金属的表面下方，至少顶部的两个金属层包括两个或更多相邻的互连。

17. 发明授权

US06905892B2 Operating method for a semiconductor component 有权
标题翻译：半导体元件的操作方法
公开(公告)号：US06905892B2
公开(公告)日：2005-06-14
申请号：US10200067
申请日：2002-07-19
申请人： Kai Esmark , Harald Gossner , Philipp Riess , Wolfgang Stadler , Martin Streibl , Martin Wendel
发明人： Kai Esmark , Harald Gossner , Philipp Riess , Wolfgang Stadler , Martin Streibl , Martin Wendel
IPC分类号： H01L27/04 , H01L21/822 , H01L23/60 , H01L29/74 , G01R31/26
CPC分类号： H01L23/60 , H01L2924/0002 , H01L2924/00
摘要： The present invention creates an operating method for a semiconductor component having a substrate; having a conductive polysilicon strip which is applied to the substrate; having a first and a second electrical contact which are connected to the conductive polysilicon strip such that this forms an electrical resistance in between them; with the semiconductor component being operated reversibly in a current/voltage range in which it has a first differential resistance (Rdiff1) up to a current limit value (It) corresponding to an upper voltage limit value (Vt) and, at current values greater than this, has a second differential resistance (Rdiff2), which is less than the first differential resistance (Rdiff1).
摘要翻译：本发明创造了具有基板的半导体部件的操作方法; 具有施加到衬底的导电多晶硅条; 具有连接到导电多晶硅条的第一和第二电接触，使得它们之间形成电阻; 半导体部件在其具有第一差分电阻（Rdiff 1）的电流/电压范围内可逆地操作，直到对应于上限电压限制值（Vt）的电流限制值（It），并且在当前值更大具有小于第一差分电阻（Rdiff 1）的第二差分电阻（Rdiff 2）。

18. 发明申请

US20090066354A1 Electrostatic Discharge Test System And Electrostatic Discharge Test Method 有权
标题翻译：静电放电测试系统和静电放电测试方法
公开(公告)号：US20090066354A1
公开(公告)日：2009-03-12
申请号：US11854275
申请日：2007-09-12
申请人： Reinhold Gaertner , Wolfgang Stadler , Harald Gossner
发明人： Reinhold Gaertner , Wolfgang Stadler , Harald Gossner
IPC分类号： G01R31/02
CPC分类号： G01R31/002
摘要： A method of conducting an electrostatic discharge test on an integrated circuit is described. The method comprises configuring a test board assembly to emulate characteristics of a system in which the integrated circuit is to be used, coupling the integrated circuit to the test board assembly, and applying an electrostatic discharge test signal of system-level type to the test board assembly.
摘要翻译：对集成电路进行静电放电试验的方法进行说明。该方法包括配置测试板组件以仿真其中使用集成电路的系统的特性，将集成电路耦合到测试板组件，以及将系统级类型的静电放电测试信号施加到测试板部件。

19. 发明授权

US07389767B2 Method for diagnosis of a volume flow control valve in an internal combustion engine comprising a high-pressure accumulator injection system 有权
标题翻译：用于诊断包括高压蓄能器注射系统的内燃机中的体积流量控制阀的方法
公开(公告)号：US07389767B2
公开(公告)日：2008-06-24
申请号：US10527976
申请日：2004-05-13
申请人： Michael Käsbauer , Wolfgang Stadler
发明人： Michael Käsbauer , Wolfgang Stadler
IPC分类号： F02M69/54 , G01L3/26
CPC分类号： F02D41/221 , F02D41/123 , F02D41/3809 , F02D2200/0602 , F02D2200/501
摘要： The invention relates to an internal combustion engine comprising a high-pressure accumulator injection system wherein the swept volume and the pressure are regulated by means of a volume flow control valve (VCV) and a pressure control valve (PCV). The inventive method consists in checking, during the overrun condition of the internal combustion engine, whether predetermined release conditions for carrying out the diagnosis are fulfilled, and in the event of a positive result, the control valve (VCV) is closed for a predetermined period of time (t1). During said period (t1), values relating to fuel pressure (FUP) are detected by means of the pressure sensor (21) and compared with a predetermined threshold value (FUP-SW), the control valve (VCV) being deemed faultless if said fuel pressure (FUP) values are sufficiently often below the threshold value (FUP_SW) during the cited period of time (t1).
摘要翻译：本发明涉及一种内燃机，其包括高压蓄能器喷射系统，其中扫气体积和压力通过体积流量控制阀（VCV）和压力控制阀（PCV）来调节。本发明的方法在于，在内燃机的超速状态期间，检查是否满足了用于执行诊断的预定释放条件，并且在积极结果的情况下，控制阀（VCV）关闭预定时段的时间（t 1）。在所述时段（t 1）期间，通过压力传感器（21）检测与燃料压力（FUP）相关的值，并与预定的阀值（FUP-SW）进行比较，如果控制阀（VCV）所述燃料压力（FUP）值在引用的时间段（t 1）期间足够经常低于阈值（FUP_SW）。

20. 发明申请

US20070165344A1 Esd test arrangement and method 有权
标题翻译： Esd测试方法和方法
公开(公告)号：US20070165344A1
公开(公告)日：2007-07-19
申请号：US10569986
申请日：2005-03-17
申请人： Kai Esmark , Harald Gossner , Wolfgang Stadler , Marin Streibl
发明人： Kai Esmark , Harald Gossner , Wolfgang Stadler , Marin Streibl
IPC分类号： H02H9/00
CPC分类号： G06F17/5036
摘要： The invention relates to a program-controlled arrangement and a method for the identification of ESD and/or latch-up weak points in the design or in the concept of an integrated circuit, having a pre-processor, which processes first data about the description of the integrated circuit, second data about already ESD-characterized circuit parts of the integrated circuit, and third data which contain information about ESD test standards, having a simulator device connected downstream of the pre-processor, which has a simulator which, by using the fourth and fifth data generated by the pre-processor, performs an ESD simulation of the integrated circuit, which has a monitoring controller for controlling the ESD simulation sequence in the simulator, having an analysis device connected downstream of the simulator device, which performs an evaluation of the sixth data generated in the simulator device with regard to their physical validity and meaningfulness, and marks the simulation runs having physically relevant ESD failure events.
摘要翻译：本发明涉及一种用于在集成电路的设计或概念中识别ESD和/或闭锁弱点的程序控制布置和方法，所述集成电路具有预处理器，所述预处理器处理关于描述的第一数据集成电路的已经具有ESD特征的电路部分的第二数据以及包含关于ESD测试标准的信息的第三数据，具有连接在预处理器下游的模拟器装置，模拟器装置具有通过使用的模拟器由预处理器生成的第四和第五数据执行集成电路的ESD仿真，其具有用于控制模拟器中的ESD模拟序列的监视控制器，具有连接在模拟器装置的下游的分析装置，该分析装置执行对模拟器装置中生成的第六个数据的物理有效性和有意义进行评估，并标记模拟运行导致身体相关的ESD故障事件。

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