专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JP2009108420A Low-resistance ito thin film and its manufacturing method 有权
标题翻译：低电阻ITO薄膜及其制造方法
公开(公告)号：JP2009108420A
公开(公告)日：2009-05-21
申请号：JP2009032262
申请日：2009-02-16
申请人： Hoya Corp , Hoya株式会社
发明人： OTA HIROMICHI , ORITA MASAHIRO
IPC分类号： C23C14/08 , C23C14/02 , C23C16/02 , C23C16/40 , C30B23/08 , C30B25/06 , C30B29/22 , H01B5/14 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To provide a low-resistance ITO thin film having a resistivity of lower than 1×10
-4 Ωcm, and a manufacturing method etc. thereof.
SOLUTION: The manufacturing method of the low-resistance ITO thin film includes depositing the ITO thin film on a crystalline substrate using a deposition method chosen from among a low-voltage sputtering method, an oxygen cluster beam deposition method, a CVD method, an organic metal CVD method, an organic metal CVD-atomic layer deposition method and MBE (molecule beam epitaxy) method. The outermost crystalline orientation on the crystalline substrate matches the crystal structure of In
2 O
3 .
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种电阻率低于1×10 -4 SPF的Ω电阻的低电阻ITO薄膜及其制造方法等。解决方案：低电阻ITO薄膜的制造方法包括使用从低电压溅射法，氧簇光束沉积法，CVD法中选择的沉积法将ITO薄膜沉积在结晶衬底上有机金属CVD法，有机金属CVD原子层沉积法和MBE（分子束外延法）法。晶体衬底上最外面的晶体取向与In 2 3 的晶体结构相匹配。版权所有（C）2009，JPO＆INPIT

12. 发明专利

JP2008131022A Electrode structure 审中-公开
标题翻译：电极结构
公开(公告)号：JP2008131022A
公开(公告)日：2008-06-05
申请号：JP2006318043
申请日：2006-11-27
申请人： Hoya Corp , Hoya株式会社
发明人： ORITA MASAHIRO , NARISHIMA TAKASHI
IPC分类号： H01L21/28 , H01L29/786 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide an electrode structure capable of injecting holes or electrons into a wide-gap semiconductor which cannot form a p-type nor an n-type semiconductor, where impurities do not exist (such as, acceptors or donors), whose ionization energy is sufficiently small.
SOLUTION: The electrode structure comprises a wide-gap semiconductor in which impurities whose ionization energy is 0.2 to 1 eV are doped, and a metal layer which has a work function smaller than binding energy of the impurity ion and is jointed to the wide-gap semiconductor. By having an external electric field applied on the structure, holes are injected from the metal layer into the wide-gap semiconductor.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够将空穴或电子注入到不能形成不存在杂质的p型或n型半导体的宽间隙半导体中的电极结构（例如，受体或受体供体），其电离能足够小。解决方案：电极结构包括其中掺杂有离子化能为0.2至1eV的杂质的宽间隙半导体，以及具有小于杂质离子的结合能的功函数的金属层，并与宽间隙半导体。通过在结构上施加外部电场，将空穴从金属层注入到宽间隙半导体中。版权所有（C）2008，JPO＆INPIT

13. 发明申请

WO2004095591B1 LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：WO2004095591B1
公开(公告)日：2005-01-27
申请号：PCT/JP2004005853
申请日：2004-04-23
申请人： HOYA CORP , KAWAZOE HIROSHI , ORITA MASAHIRO , YANAGITA HIROAKI , KOBAYASHI SATOSHI
发明人： KAWAZOE HIROSHI , ORITA MASAHIRO , YANAGITA HIROAKI , KOBAYASHI SATOSHI
IPC分类号： H01L33/02 , H01S5/30 , H01S5/323 , H01L33/00
CPC分类号： H01L33/025 , H01S5/3018 , H01S5/3027 , H01S5/32341
摘要： A light-emitting diode with high luminous efficiency is disclosed which is free from deformation or defect of crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer composed of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, namely an n electrode and a hole implanting electrode, namely a p electrode joined to the light-emitting layer.
摘要翻译：公开了一种发光效率高的发光二极管，其不受掺杂剂引起的晶体变形或缺陷的影响。发光二极管不发出不必要的波长的光并具有广泛的发射波长选择。发光二极管包括由不含掺杂剂的双极半导体构成的发光层和电子注入电极，即n电极和空穴注入电极，即连接到发光层的p电极。

14. 发明公开

EP1619693A4 ELECTRODE MATERIAL AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：电极材料半导体元件
公开(公告)号：EP1619693A4
公开(公告)日：2011-01-12
申请号：EP04729235
申请日：2004-04-23
申请人： HOYA CORP
发明人： KAWAZOE HIROSHI , YANAGITA HIROAKI , ORITA MASAHIRO
IPC分类号： H01B1/06 , C04B35/547 , H01L21/28 , H01L21/44 , H01L29/22 , H01L29/45 , H01L31/0336 , H01L33/00 , H01L33/28 , H01L33/40
CPC分类号： H01L31/0224 , C04B35/547 , H01L21/44 , H01L29/22 , H01L29/45 , H01L31/022408 , H01L31/022425 , H01L31/0682 , H01L33/28 , H01L33/40 , H01L2924/0002 , Y02E10/547 , H01L2924/00

15. 发明公开

EP1443130A4 NATURAL SUPERLATTICE HOMOLOGOUS SINGLE CRYSTAL THIN FILM, METHOD FOR PREPARATION THEREOF, AND DEVICE USING SAID SINGLE CRYSTAL THIN FILM 有权
标题翻译：和天然超级电网同源单晶硅薄膜PROCESS FOR中使用的薄膜单晶硅产生与设备
公开(公告)号：EP1443130A4
公开(公告)日：2009-06-03
申请号：EP02779976
申请日：2002-10-31
申请人： JAPAN SCIENCE & TECH AGENCY , HOYA CORP
发明人： HOSONO HIDEO , OTA HIROMICHI , ORITA MASAHIRO , UEDA KAZUSHIGE , HIRANO MASAHIRO , KAMIYA TOSHIO
IPC分类号： C30B23/02 , H01L21/336 , H01L29/45 , H01L29/49 , H01L29/786 , C30B29/22 , C23C16/40 , C30B29/68 , H01L21/205 , H01L29/06
CPC分类号： H01L29/7869 , C30B23/02 , C30B29/22 , C30B29/68 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78693
摘要： Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M M O3 (ZnO)m, wherein M is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

16. 发明公开

EP1622207A4 LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：EP1622207A4
公开(公告)日：2007-08-08
申请号：EP04729225
申请日：2004-04-23
申请人： HOYA CORP
发明人： KAWAZOE HIROSHI , ORITA MASAHIRO , YANAGITA HIROAKI , KOBAYASHI SATOSHI
IPC分类号： H01L33/02 , H01S5/30 , H01S5/323
CPC分类号： H01L33/025 , H01S5/3018 , H01S5/3027 , H01S5/32341
摘要： A light-emitting diode with high luminous efficiency is disclosed which is free from deformation or defect of crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer composed of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, namely an n electrode and a hole implanting electrode, namely a p electrode joined to the light-emitting layer.

17. 发明专利

JP2000286410A INDIUM OXIDE THIN FILM AND ITS MANUFACTURE 失效
公开(公告)号：JP2000286410A
公开(公告)日：2000-10-13
申请号：JP9024899
申请日：1999-03-30
申请人： HOYA CORP
发明人： ORITA MASAHIRO , OTA HIROMICHI
IPC分类号： H01L29/12 , C23C14/08 , C23C14/28 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To design an electronic device using an indium oxide thin film, by making not larger than a specific value the half-value width of its rocking curve measured through an X-ray diffraction method to obtain its high orientation quality, and by making not larger than a specific value the root-mean- square root roughness of its surface, and further, by making not smaller than a specific value its carrier mobility. SOLUTION: In an ultrahigh-vacuum vessel for laser ablations, a single-crystal substrate plane (001) of YSZ(yttrium stabilized zirconia) is mounted to heat it at 200-800 deg.C by a lamp heater. Thereafter, an oxygen gas of 1.2×10-3 Pa is introduced into the vessel to project an excimer laser beam on a target made of a high-purity In2O3. Thereby, the In2O3 is so deposited on a substrate opposed to the target and separated by 30 mm from the target as to produce such an indium oxide thin film that the half-value width of its rocking curve measured by an X-ray diffractometer is made not larger than 0.3 deg. to obtain its high orientation quality, and the rms roughness of its surface is not larger than 10 nm, and further, its carier mobility is made not smaller than 70 cm2/Vs.

18. 发明专利

JP2000285737A TRANSPARENT CONDUCTIVE THIN FILM AND ITS MANUFACTURE 失效
公开(公告)号：JP2000285737A
公开(公告)日：2000-10-13
申请号：JP9023399
申请日：1999-03-30
申请人： HOYA CORP
发明人： ORITA MASAHIRO , OTA HIROMICHI
IPC分类号： B32B7/02 , G02F1/1333 , G02F1/1343 , H01B5/14 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To reduce thickness of a thin film and enhance the efficiency to attain the larger size and make into fine state of a liquid crystal display by alternately laminating a carrier generating layer and a carrier moving layer by the use of a high purity target by means of pulse laser evaporation PLD, and specifying the average roughness of each layer. SOLUTION: Atoms, molecules, or ions are accumulated on a monocrystal substrate, having a surface super-flattened in atomic order by PLD filming method using a sintered body or powder body of high purity In2O2, ZnO or the like as target and a laser beam as starting material evaporating source to alternately laminate a carrier generating layer and a carrier moving layer thereon in atomic layer development mode. At this time, vacuum level, power density of laser beam, temperature of substrate and oxygen partial pressure are properly regulated to set the film thickness to 2-30 mm, and the surface roughness in the interface between the respective layers to 10 nm or less by square average square root roughness Rms, preferably, of 3 nm or less. According to this, a superhigh conductive thin film having high crystallinity, mobility and carrier concentration can be provided so as to contribute to making higher efficiency for a solar battery.

19. 发明专利

JPH08330103A ELECTRIC RESISTANCE FILM 失效
公开(公告)号：JPH08330103A
公开(公告)日：1996-12-13
申请号：JP13525095
申请日：1995-06-01
申请人： HOYA CORP
发明人： SAKAI HIROYUKI , ORITA MASAHIRO , TAKEUCHI MEGUMI
IPC分类号： C01G15/00 , H01C7/00
摘要： PURPOSE: To provide an electric resistance film which has an excellent transparency and conductivity and is suitable for the use as a cloudproof film or an electric wave receiving and transmitting film. CONSTITUTION: This is an electric resistance film expressed by a general formula M(1)x M(2)y Inz O(x+3y/2+3z/2) -d (M(1) is at least one element out of Mg and Zn, M(2) is at least one element out of Al and Ga, a ratio(x:y) is in a range of 0.2-1.8:1 and a ratio (z:y) is in a range of 0.4-1.4:1, an amount of oxygen deficiency 'd' is 3×10 -1×10 times as much as (x+3y/2+3z/2). This film is expressed by the general formula (a lower limit of 'd' is 0) and a part of at least one element out of M(1), M(2), and In is substituted by other element and the element which substitutes for M(1) has an atomic valence of two or more and the elements which substitute for M(2) and In have an atomic valence of three or more. This electric resistance film is made by implanting positive ions into an oxide expressed by the general formula (a lower limit of 'd' is 0).

20. 发明专利

JP2001089846A LOW RESISTANCE ITO THIN FILM AND ITS PREPARATION 失效
公开(公告)号：JP2001089846A
公开(公告)日：2001-04-03
申请号：JP2000187755
申请日：2000-06-22
申请人： HOYA CORP
发明人： OTA HIROMICHI , ORITA MASAHIRO
IPC分类号： C01G19/00 , C23C14/08 , C23C14/28 , C23C14/34 , C23C16/40 , C30B23/02 , C30B25/02 , C30B25/18 , H01B5/14 , H01B13/00 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To prepare a low resistance ITO thin film having

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式