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11. 发明授权

US07531825B2 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 有权
标题翻译：用于形成用于可变电阻存储器阵列的自对准热隔离单元的方法
公开(公告)号：US07531825B2
公开(公告)日：2009-05-12
申请号：US11463824
申请日：2006-08-10
申请人： Erh-Kun Lai , Chiahua Ho , Kuang Yeu Hsieh
发明人： Erh-Kun Lai , Chiahua Ho , Kuang Yeu Hsieh
IPC分类号： H01L47/00 , G11C11/56
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1683
摘要： A non-volatile method with a self-aligned RRAM element. The method includes a lower electrode element, generally planar in form, having an inner contact surface. At the top of the device is a upper electrode element, spaced from the lower electrode element. A containment structure extends between the upper electrode element and the lower electrode element, and this element includes a sidewall spacer element having an inner surface defining a generally funnel-shaped central cavity, terminating at a terminal edge to define a central aperture; and a spandrel element positioned between the sidewall spacer element and the lower electrode, having an inner surface defining a thermal isolation cell, the spandrel inner walls being spaced radially outward from the sidewall spacer terminal edge, such that the sidewall spacer terminal edge projects radially inward from the spandrel element inner surface. ARRAM element extends between the lower electrode element and the upper electrode, occupying at least a portion of the sidewall spacer element central cavity and projecting from the sidewall spacer terminal edge toward and making contact with the lower electrode. In this manner, the spandrel element inner surface is spaced from the RRAM element to define a thermal isolation cell adjacent the RRAM element.
摘要翻译：具有自对准RRAM元素的非易失性方法。该方法包括具有内部接触表面的大体平面形状的下部电极元件。在装置的顶部是与下部电极元件间隔开的上部电极元件。容纳结构在上电极元件和下电极元件之间延伸，并且该元件包括侧壁间隔元件，其具有限定大致漏斗形中心腔的内表面，终止于端边缘以限定中心孔; 以及位于所述侧壁间隔元件和所述下电极之间的突出元件，具有限定了热隔离单元的内表面，所述凸起内壁与所述侧壁间隔件终端边缘径向向外间隔开，使得所述侧壁间隔件末端边缘径向向内突出从弹簧元件内表面。 ARRAM元件在下电极元件和上电极之间延伸，占据侧壁间隔元件中心空腔的至少一部分并且从侧壁间隔件终端边缘朝向和与下电极接触。以这种方式，伞形元件内表面与RRAM元件间隔开以限定与RRAM元件相邻的热隔离单元。

12. 发明申请

US20080173982A1 Resistance random access memory 有权
标题翻译：电阻随机存取存储器
公开(公告)号：US20080173982A1
公开(公告)日：2008-07-24
申请号：US11656246
申请日：2007-01-18
申请人： Erh-Kun Lai , Chiahua Ho , Kuang-Yeu Hsieh
发明人： Erh-Kun Lai , Chiahua Ho , Kuang-Yeu Hsieh
IPC分类号： H01L29/12
CPC分类号： H01L27/24 , G11C11/5664 , G11C11/5678 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C16/0475 , G11C2213/31 , G11C2213/51
摘要： A memory comprises a number of word lines in a first direction, a number of bit lines in a second direction, each coupled to at least one of the word lines, and a number of memory elements, each coupled to one of the word lines and one of the bit lines. Each memory element comprises a top electrode for connecting to a corresponding word line, a bottom electrode for connecting to a corresponding bit line, a resistive layer on the bottom electrode, and at least two separate liners, each liner having resistive materials on both ends of the liner and each liner coupled between the top electrode and the resistive layer.
摘要翻译：存储器包括在第一方向上的多个字线，第二方向上的多个位线，每个字线连接到至少一个字线，以及多个存储器元件，每个存储器元件耦合到字线之一，其中一个位线。每个存储元件包括用于连接到对应的字线的顶部电极，用于连接到对应的位线的底部电极，底部电极上的电阻层，以及至少两个分离的衬垫，每个衬垫在两端具有电阻材料衬垫和每个衬垫耦合在顶部电极和电阻层之间。

13. 发明申请

US20070155172A1 Manufacturing Method for Phase Change RAM with Electrode Layer Process 有权
标题翻译：具有电极层工艺的相变RAM的制造方法
公开(公告)号：US20070155172A1
公开(公告)日：2007-07-05
申请号：US11382799
申请日：2006-05-11
申请人： Erh Kun Lai , Chiahua Ho , Yi Chou Chen , Kuang Yeu Hsieh
发明人： Erh Kun Lai , Chiahua Ho , Yi Chou Chen , Kuang Yeu Hsieh
IPC分类号： H01L21/44
CPC分类号： H01L27/2436 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/14 , H01L45/141 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A method for manufacturing a phase change memory device comprises forming an electrode layer. Electrodes are made in the electrode layer using conductor fill techniques that are also used inter-layer conductors for metallization layers, in order to improve process scaling with shrinking critical dimensions for metallization layers. The electrode layer is made by forming a multi-layer dielectric layer on a substrate, etching the multi-layer dielectric layer to form vias for electrode members contacting circuitry below, forming insulating spacers on the vias, etching through a top layer in the multi-layer dielectric layer to form trenches between the insulating spacers for electrode members contacting circuitry above, filling the vias and trenches with a conductive material using the metallization process. Thin film bridges of memory material are formed over the electrode layer.
摘要翻译：一种相变存储器件的制造方法，包括形成电极层。使用导体填充技术在电极层中制造电极，该技术也用于金属化层的层间导体，以便通过金属化层的缩小临界尺寸改善工艺规模。电极层是通过在衬底上形成多层电介质层而形成的，蚀刻多层电介质层以形成接触下面电路的电极构件的通路，在通孔上形成绝缘隔离层，以在用于接触上述电路的电极部件的绝缘间隔物之间形成沟槽，用导电材料使用金属化工艺填充过孔和沟槽。存储材料的薄膜桥形成在电极层上。

14. 发明申请

US20100197119A1 Resistor Random Access Memory Cell Device 有权
标题翻译：电阻随机存取存储单元装置
公开(公告)号：US20100197119A1
公开(公告)日：2010-08-05
申请号：US12755897
申请日：2010-04-07
申请人： Erh Kun Lai , Chiahua Ho , Kuang Yeu Hsieh
发明人： Erh Kun Lai , Chiahua Ho , Kuang Yeu Hsieh
IPC分类号： H01L21/20
CPC分类号： H01L45/122 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1625 , H01L45/1641 , H01L45/1683
摘要： A memory cell device has a bottom electrode and a top electrode, a plug of memory material in contact with the bottom electrode, and a cup-shaped conductive member having a rim that contacts the top electrode and an opening in the bottom that contacts the memory material. Accordingly, the conductive path in the memory cells passes from the top electrode through the conductive cup-shaped member, and through the plug of phase change material to the bottom electrode. Also, methods for making the memory cell device include steps of forming a bottom electrode island including an insulative element and a stop element over a bottom electrode, forming a separation layer surrounding the island, removing the stop element to form a hole over the insulative element in the separation layer, forming a conductive film in the hole and an insulative liner over conductive film, etching to form a cup-shaped conductive film having a rim and to form an opening through the insulative liner and the bottom of the cup-shaped conductive film to the surface of the bottom electrode, forming a plug of phase change memory material in the opening, and forming a top electrode in contact with the rim of the cup-shaped conductive film.
摘要翻译：存储单元装置具有底部电极和顶部电极，与底部电极接触的存储器材料的插头以及具有接触顶部电极的边缘和接触存储器的底部开口的杯形导电构件材料。因此，存储单元中的导电路径从顶部电极通过导电杯状构件，并通过相变材料的塞子到达底部电极。此外，用于制造存储单元器件的方法包括在底部电极上形成包括绝缘元件和止动元件的底部电极岛的步骤，形成围绕岛的分离层，去除止动元件以在绝缘元件上方形成孔在分离层中，在孔中形成导电膜，在导电膜上形成绝缘衬垫，进行蚀刻以形成具有边缘的杯形导电膜，并且通过绝缘衬垫和杯状导电体的底部形成开口在底部电极的表面形成薄膜，在开口中形成相变记忆材料塞，形成与杯状导电膜的边缘接触的顶部电极。

15. 发明申请

US20090236743A1 Programmable Resistive RAM and Manufacturing Method 有权
标题翻译：可编程电阻RAM和制造方法
公开(公告)号：US20090236743A1
公开(公告)日：2009-09-24
申请号：US12477811
申请日：2009-06-03
申请人： Chiahua Ho , Erh-Kun Lai , Kuang Yeu Hsieh
发明人： Chiahua Ho , Erh-Kun Lai , Kuang Yeu Hsieh
IPC分类号： H01L23/498
CPC分类号： H01L27/24 , H01L28/26
摘要： Programmable resistive RAM cells have a resistance that depends on the size of the contacts. Manufacturing methods and integrated circuits for lowered contact resistance are disclosed that have contacts of reduced size.
摘要翻译：可编程电阻RAM单元具有取决于触点尺寸的电阻。公开了具有降低的接触电阻的制造方法和集成电路，其具有减小的尺寸的接触。

16. 发明授权

US07554144B2 Memory device and manufacturing method 有权
标题翻译：存储器件及制造方法
公开(公告)号：US07554144B2
公开(公告)日：2009-06-30
申请号：US11279945
申请日：2006-04-17
申请人： Erh-Kun Lai , Chiahua Ho , Kuang Yeu Hsieh
发明人： Erh-Kun Lai , Chiahua Ho , Kuang Yeu Hsieh
IPC分类号： H01L29/417
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1253 , H01L45/14 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16
摘要： A memory device includes first and second electrodes separated by an insulating member comprising upwardly and inwardly tapering surfaces connected by a surface segment. A bridge, comprising memory material, such as a phase change material, switchable between electrical property states by the application of energy, is positioned across the surface segment and in contact with the electrodes to define an inter-electrode path defined at least in part by the length of the surface segment. According to a method for making a memory cell device, the tapering surfaces may be created by depositing a dielectric material cap using a high density plasma (HDP) deposition procedure. The electrodes and the dielectric material cap may he planarized to create the surface segment on the dielectric material. At least one of the dielectric material depositing step and the planarizing step may be controlled so that the length of the surface and segment is within a chosen dimensional range, such as between 10 nm and 100 nm.
摘要翻译：存储器件包括由绝缘构件隔开的第一和第二电极，包括由表面段连接的向上和向内的渐缩表面。包括可通过施加能量在电性能状态之间切换的记忆材料（例如相变材料）的桥被定位在表面段上并与电极接触以限定至少部分地由表面段的长度。根据制造存储单元器件的方法，可以通过使用高密度等离子体（HDP）沉积程序沉积介电材料盖而产生锥形表面。电极和电介质材料盖可以被平坦化以在电介质材料上产生表面段。可以控制介电材料沉积步骤和平坦化步骤中的至少一个，使得表面和段的长度在选定的尺寸范围内，例如在10nm和100nm之间。

17. 发明申请

US20070117315A1 Memory cell device and manufacturing method 有权
标题翻译：存储单元器件及其制造方法
公开(公告)号：US20070117315A1
公开(公告)日：2007-05-24
申请号：US11357902
申请日：2006-02-17
申请人： Erh-Kun Lai , Chiahua Ho , Kuang Hsieh
发明人： Erh-Kun Lai , Chiahua Ho , Kuang Hsieh
IPC分类号： H01L21/336 , H01L29/94
CPC分类号： H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/14 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625 , H01L45/1641 , H01L45/1691
摘要： A memory cell device, having a memory material switchable between electrical property states by the application of energy, comprises an electrode, a separation layer against an electrode surface, a hole in the separation layer, a second material in the hole defining a void having a downwardly and inwardly tapering void region. A memory material is in the void region in electrical contact with the electrode surface. A second electrode is in electrical contact with the memory material. Energy passing between the first and second electrodes is concentrated within the memory material so to facilitate changing an electrical property state of the memory material. The memory material may comprise a phase change material. The second material may comprise a high density plasma-deposited material. A method for making a memory cell device is also disclosed.
摘要翻译：具有可通过施加能量在电性能状态之间切换的记忆材料的存储单元装置包括电极，与电极表面相对的分离层，分离层中的孔，孔中的第二材料限定具有向下和向内逐渐变细的空隙区域。记忆材料位于与电极表面电接触的空隙区域中。第二电极与记忆材料电接触。在第一和第二电极之间的能量通过集中在存储材料内，以便于改变存储材料的电性能状态。记忆材料可以包括相变材料。第二材料可以包括高密度等离子体沉积材料。还公开了一种制造存储单元器件的方法。

18. 发明申请

US20070258284A1 METHODS AND APPARATUS FOR THERMALLY ASSISTED PROGRAMMING OF A MAGNETIC MEMORY DEVICE 有权
标题翻译：用于磁性记忆装置的热辅助编程的方法和装置
公开(公告)号：US20070258284A1
公开(公告)日：2007-11-08
申请号：US11381939
申请日：2006-05-05
申请人： Chiahua Ho , Kuang-Yeu Hsieh
发明人： Chiahua Ho , Kuang-Yeu Hsieh
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675
摘要： A magnetic memory device comprises a magnetic memory cell that includes a pinned layer and a free layer separated from the pinned layer by an insulating layer. The magnetic memory device also comprises a thermal plate in contact with the free layer. The magnetic memory device can be configured so that a first current flows through the thermal plate heating the thermal plate. The magnetic behavior of the free layer can be altered due to the heating caused by the first current, making it easier to switch the orientation and magnetization of the free layer. A second current can then flow through a bit line near the free layer generating a magnetic field sufficient to switch the orientation of magnetization of the free layer.
摘要翻译：磁存储器件包括磁存储单元，其包括被钉扎层和通过绝缘层与被钉扎层分离的自由层。磁存储装置还包括与自由层接触的热板。磁存储器件可以被配置成使得第一电流流过加热板的加热板。由于由第一电流引起的加热，自由层的磁性能可以改变，从而更容易切换自由层的取向和磁化。然后，第二电流可以流过自由层附近的位线，产生足以切换自由层的磁化取向的磁场。

19. 发明申请

US20070241371A1 Memory device and manufacturing method 有权
标题翻译：存储器件及制造方法
公开(公告)号：US20070241371A1
公开(公告)日：2007-10-18
申请号：US11279945
申请日：2006-04-17
申请人： Erh-Kun Lai , Chiahua Ho , Kuang Hsieh
发明人： Erh-Kun Lai , Chiahua Ho , Kuang Hsieh
IPC分类号： H01L29/772 , H01L21/8239
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1253 , H01L45/14 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16
摘要： A memory device includes first and second electrodes separated by an insulating member comprising upwardly and inwardly tapering surfaces connected by a surface segment. A bridge, comprising memory material, such as a phase change material, switchable between electrical property states by the application of energy, is positioned across the surface segment and in contact with the electrodes to define an inter-electrode path defined at least in part by the length of the surface segment. According to a method for making a memory cell device, the tapering surfaces may be created by depositing a dielectric material cap using a high density plasma (HDP) deposition procedure. The electrodes and the dielectric material cap may he planarized to create the surface segment on the dielectric material. At least one of the dielectric material depositing step and the planarizing step may be controlled so that the length of the surface and segment is within a chosen dimensional range, such as between 10 nm and 100 nm.
摘要翻译：存储器件包括由绝缘构件隔开的第一和第二电极，包括由表面段连接的向上和向内的渐缩表面。包括可通过施加能量在电性能状态之间切换的记忆材料（例如相变材料）的桥被定位在表面段上并与电极接触以限定至少部分地由表面段的长度。根据制造存储单元器件的方法，可以通过使用高密度等离子体（HDP）沉积程序沉积介电材料盖而产生锥形表面。电极和电介质材料盖可以被平坦化以在电介质材料上产生表面段。可以控制介电材料沉积步骤和平坦化步骤中的至少一个，使得表面和段的长度在选定的尺寸范围内，例如在10nm和100nm之间。

20. 发明授权

US07457149B2 Methods and apparatus for thermally assisted programming of a magnetic memory device 有权
标题翻译：用于磁存储器件热辅助编程的方法和装置
公开(公告)号：US07457149B2
公开(公告)日：2008-11-25
申请号：US11381939
申请日：2006-05-05
申请人： Chiahua Ho , Kuang-Yeu Hsieh
发明人： Chiahua Ho , Kuang-Yeu Hsieh
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1675
摘要： A magnetic memory device comprises a magnetic memory cell that includes a pinned layer and a free layer separated from the pinned layer by an insulating layer. The magnetic memory device also comprises a thermal plate in contact with the free layer. The magnetic memory device can be configured so that a first current flows through the thermal plate heating the thermal plate. The magnetic behavior of the free layer can be altered due to the heating caused by the first current, making it easier to switch the orientation and magnetization of the free layer. A second current can then flow through a bit line near the free layer generating a magnetic field sufficient to switch the orientation of magnetization of the free layer.
摘要翻译：磁存储器件包括磁存储器单元，其包括被钉扎层和通过绝缘层与被钉扎层分离的自由层。磁存储装置还包括与自由层接触的热板。磁存储器件可以被配置成使得第一电流流过加热板的加热板。由于由第一电流引起的加热，自由层的磁性能可以改变，从而更容易切换自由层的取向和磁化。然后，第二电流可以流过自由层附近的位线，产生足以切换自由层的磁化取向的磁场。

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