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11. 发明申请

US20110284863A1 III-V SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING THE SAME 有权
标题翻译： III-V族半导体结构及其形成方法
公开(公告)号：US20110284863A1
公开(公告)日：2011-11-24
申请号：US13069900
申请日：2011-03-23
申请人： Ed Lindow , Chantal Arena , Ronald Bertram , Ranjan Datta , Subhash Mahajan
发明人： Ed Lindow , Chantal Arena , Ronald Bertram , Ranjan Datta , Subhash Mahajan
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02455 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/02617 , H01L21/0262
摘要： Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.
摘要翻译：本发明的实施例涉及制造半导体结构的方法以及通过这些方法制造的半导体结构。在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。通过使用不同的生长条件生长子层来制造半导体层，以改善所得层的均匀性，改善所得层的表面粗糙度和/或使层能够生长到增加的厚度而不发生的应变松弛。

12. 发明申请

US20130126896A1 III-V SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING THE SAME 有权
标题翻译： III-V族半导体结构及其形成方法
公开(公告)号：US20130126896A1
公开(公告)日：2013-05-23
申请号：US13738406
申请日：2013-01-10
申请人： Ed Lindow , Chantal Arena , Ronald Bertram , Ranjan Datta , Subhash Mahajan
发明人： Ed Lindow , Chantal Arena , Ronald Bertram , Ranjan Datta , Subhash Mahajan
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02455 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/02617 , H01L21/0262
摘要： Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.
摘要翻译：本发明的实施例涉及制造半导体结构的方法以及通过这些方法制造的半导体结构。在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。通过使用不同的生长条件生长子层来制造半导体层，以改善所得层的均匀性，改善所得层的表面粗糙度和/或使层能够生长到增加的厚度而不发生的应变松弛。

13. 发明授权

US08377802B2 III-V semiconductor structures and methods for forming the same 有权
公开(公告)号：US08377802B2
公开(公告)日：2013-02-19
申请号：US13069900
申请日：2011-03-23
申请人： Ed Lindow , Chantal Arena , Ronald Bertram , Ranjan Datta , Subhash Mahajan
发明人： Ed Lindow , Chantal Arena , Ronald Bertram , Ranjan Datta , Subhash Mahajan
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02455 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/02617 , H01L21/0262
摘要： Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

14. 发明申请

US20110305835A1 SYSTEMS AND METHODS FOR A GAS TREATMENT OF A NUMBER OF SUBSTRATES 审中-公开
标题翻译：用于气体处理多个基板的系统和方法
公开(公告)号：US20110305835A1
公开(公告)日：2011-12-15
申请号：US12814936
申请日：2010-06-14
申请人： Ronald Thomas Bertram, JR. , Chantal Arena , Ed Lindow
发明人： Ronald Thomas Bertram, JR. , Chantal Arena , Ed Lindow
IPC分类号： C23C16/458 , C23C16/44 , C23C16/00
CPC分类号： C23C16/4584 , C23C16/45568 , C23C16/45587 , C23C16/45589
摘要： Systems and methods for the gas treatment of one or more substrates include at least two gas injectors in a reaction chamber, one of which may be movable. The systems may also include a substrate support structure for holding one or more substrates disposed within the reaction chamber. The movable gas injector may be disposed between the substrate support structure and another gas injector. The gas injectors may be configured to discharge different process gasses therefrom. The substrate support structure may be rotatable around an axis of rotation.
摘要翻译：用于气体处理一个或多个基底的系统和方法包括反应室中的至少两个气体注入器，其中一个可以是可移动的。该系统还可以包括用于保持设置在反应室内的一个或多个衬底的衬底支撑结构。可移动气体注入器可以设置在基板支撑结构和另一个气体注入器之间。气体喷射器可以被配置为从其排出不同的过程气体。衬底支撑结构可以围绕旋转轴线旋转。

15. 发明申请

US20110277681A1 GAS INJECTORS FOR CVD SYSTEMS WITH THE SAME 审中-公开
标题翻译：燃气喷射器与其相同的CVD系统
公开(公告)号：US20110277681A1
公开(公告)日：2011-11-17
申请号：US13145290
申请日：2010-02-17
申请人： Chantal Arena , Ronald Thomas Bertram, JR. , Ed Lindow
发明人： Chantal Arena , Ronald Thomas Bertram, JR. , Ed Lindow
IPC分类号： C30B23/06 , F16K49/00 , C23C16/34
CPC分类号： C23C16/34 , C23C16/45548 , C23C16/4557 , C23C16/45574 , C30B25/14 , C30B29/403 , Y10T137/6416
摘要： The present invention provides improved gas injectors for use with chemical vapour deposition (CVD) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates.
摘要翻译：本发明提供了用于化学气相沉积（CVD）系统的改进的气体注入器，其在注入CVD腔室之前对气体进行热化。所提供的喷射器构造成通过加热区增加气流时间，并且包括延长加热区中的气体驻留时间的导气导管。所提供的注射器还具有尺寸，形状和布置成以选定的流动模式注入气体的出口端口。本发明还提供了使用所提供的热化气体喷射器的CVD系统。本发明特别适用于大量制造GaN衬底。

16. 发明申请

US20130244410A1 METHODS OF FORMING BULK III-NITRIDE MATERIALS ON METAL-NITRIDE GROWTH TEMPLATE LAYERS, AND STRUCTURES FORMED BY SUCH METHODS 有权
标题翻译：金属氮化物模板层上形成块状III-氮化物材料的方法，以及通过这些方法形成的结构
公开(公告)号：US20130244410A1
公开(公告)日：2013-09-19
申请号：US13988987
申请日：2011-11-23
申请人： Chantal Arena , Ronald Thomas Bertram , Ed Lindow
发明人： Chantal Arena , Ronald Thomas Bertram , Ed Lindow
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , C23C16/0272 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/0262
摘要： Bulk III-nitride semiconductor materials are deposited in an HPVE process using a metal trichloride precursor on a metal nitride template layer of a growth substrate. Deposition of the bulk III-nitride semiconductor material may be performed without ex situ formation of the template layer using a MOCVD process. In some embodiments, a nucleation template layer is formed ex situ using a non-MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In additional embodiments, a nucleation template layer is formed in situ using an MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In further embodiments, a nucleation template layer is formed in situ using an HVPE process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process.
摘要翻译：使用金属三氯化物前体在生长衬底的金属氮化物模板层上的HPVE工艺中沉积块状III族氮化物半导体材料。本体III族氮化物半导体材料的沉积可以使用MOCVD工艺在不原位形成模板层的情况下进行。在一些实施例中，在使用HVPE工艺在模板层上沉积体III族氮化物半导体材料之前，使用非MOCVD工艺在原位形成成核模板层。在另外的实施例中，在使用HVPE工艺在模板层上沉积体III族氮化物半导体材料之前，使用MOCVD工艺原位形成成核模板层。在另外的实施方案中，使用HVPE工艺在模板层上沉积III族氮化物半导体材料之前，使用HVPE工艺原位形成成核模板层。

17. 发明授权

US09023721B2 Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods 有权
标题翻译：在金属氮化物生长模板层上形成本体III族氮化物材料的方法以及通过这些方法形成的结构
公开(公告)号：US09023721B2
公开(公告)日：2015-05-05
申请号：US13988987
申请日：2011-11-23
申请人： Chantal Arena , Ronald Thomas Bertram , Ed Lindow
发明人： Chantal Arena , Ronald Thomas Bertram , Ed Lindow
IPC分类号： H01L21/36 , H01L21/02 , C23C16/02 , C23C16/30 , C30B25/02 , C30B29/40
CPC分类号： H01L21/0254 , C23C16/0272 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/0262
摘要： Bulk III-nitride semiconductor materials are deposited in an HPVE process using a metal trichloride precursor on a metal nitride template layer of a growth substrate. Deposition of the bulk III-nitride semiconductor material may be performed without ex situ formation of the template layer using a MOCVD process. In some embodiments, a nucleation template layer is formed ex situ using a non-MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In additional embodiments, a nucleation template layer is formed in situ using an MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In further embodiments, a nucleation template layer is formed in situ using an HVPE process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process.
摘要翻译：使用金属三氯化物前体在生长衬底的金属氮化物模板层上的HPVE工艺中沉积块状III族氮化物半导体材料。本体III族氮化物半导体材料的沉积可以使用MOCVD工艺在不原位形成模板层的情况下进行。在一些实施例中，在使用HVPE工艺在模板层上沉积体III族氮化物半导体材料之前，使用非MOCVD工艺在原位形成成核模板层。在另外的实施例中，在使用HVPE工艺在模板层上沉积体III族氮化物半导体材料之前，使用MOCVD工艺原位形成成核模板层。在另外的实施方案中，使用HVPE工艺在模板层上沉积III族氮化物半导体材料之前，使用HVPE工艺原位形成成核模板层。

18. 发明申请

US20130160702A1 METHODS OF GROWING III-V SEMICONDUCTOR MATERIALS, AND RELATED SYSTEMS 审中-公开
标题翻译：生长III-V族半导体材料的方法及相关系统
公开(公告)号：US20130160702A1
公开(公告)日：2013-06-27
申请号：US13336829
申请日：2011-12-23
申请人： Ed Lindow
发明人： Ed Lindow
IPC分类号： C30B25/10 , C30B25/02
CPC分类号： C30B25/02 , C30B29/403
摘要： Methods and systems are increase the number of Group V ions formed from Group V precursors in methods of forming III-V semiconductor materials to enhance the growth rate of the III-V semiconductor material. In some embodiments, a Group V precursor is heated and at least partially decomposed in a heated diffuser to form Group V ions. In additional embodiments, microwave energy is applied to a Group V precursor and the Group V precursor is at least partially decomposed to form Group V ions. Group III ions are also formed, and the Group III and Group V ions are used to form a III-V semiconductor material within a chamber.
摘要翻译：在形成III-V族半导体材料的方法中，方法和系统增加了由V族前体形成的V族离子的数量，以提高III-V族半导体材料的生长速率。在一些实施方案中，将V族前体加热并在加热的扩散器中至少部分分解以形成V族离子。在另外的实施方案中，将微波能量施加到V族前体，并且V族前体至少部分地分解以形成V族离子。还形成III族离子，并且使用III族和V族离子在室内形成III-V族半导体材料。

19. 发明申请

US20120211870A1 III-V SEMICONDUCTOR STRUCTURES WITH DIMINISHED PIT DEFECTS AND METHODS FOR FORMING THE SAME 有权
标题翻译：具有缺陷凹痕缺陷的III-V半导体结构及其形成方法
公开(公告)号：US20120211870A1
公开(公告)日：2012-08-23
申请号：US13029213
申请日：2011-02-17
申请人： Christophe Figuet , Ed Lindow , Pierre Tomasini
发明人： Christophe Figuet , Ed Lindow , Pierre Tomasini
IPC分类号： H01L29/20 , H01L21/66 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0259 , H01L29/2003
摘要： Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. An In-III-V semiconductor layer is grown with an Indium concentration above a saturation regime by adjusting growth conditions such as a temperature of a growth surface to create a super-saturation regime wherein the In-III-V semiconductor layer will grow with a diminished density of V-pits relative to the saturation regime.
摘要翻译：实施例涉及半导体结构及其形成方法。在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。通过调整诸如生长表面的温度的生长条件以产生超饱和状态，其中In-III-V半导体层将以相对于饱和状态，V型凹坑的密度降低。

20. 发明授权

US08975165B2 III-V semiconductor structures with diminished pit defects and methods for forming the same 有权
标题翻译：缺陷凹坑缺陷的III-V半导体结构及其形成方法
公开(公告)号：US08975165B2
公开(公告)日：2015-03-10
申请号：US13029213
申请日：2011-02-17
申请人： Christophe Figuet , Ed Lindow , Pierre Tomasini
发明人： Christophe Figuet , Ed Lindow , Pierre Tomasini
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0259 , H01L29/2003
摘要： Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. An In-III-V semiconductor layer is grown with an Indium concentration above a saturation regime by adjusting growth conditions such as a temperature of a growth surface to create a super-saturation regime wherein the In-III-V semiconductor layer will grow with a diminished density of V-pits relative to the saturation regime.
摘要翻译：实施例涉及半导体结构及其形成方法。在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。通过调整诸如生长表面的温度的生长条件以产生超饱和状态，其中In-III-V半导体层将以相对于饱和状态，V型凹坑的密度降低。

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