专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20110302468A1 Memory system and method of accessing a semiconductor memory device 有权
公开(公告)号：US20110302468A1
公开(公告)日：2011-12-08
申请号：US13137424
申请日：2011-08-15
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G11C29/52 , G06F11/22
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

12. 发明申请

US20110302352A1 Memory system and method of accessing a semiconductor memory device 有权
标题翻译：用于访问半导体存储器件的存储器系统和方法
公开(公告)号：US20110302352A1
公开(公告)日：2011-12-08
申请号：US13137423
申请日：2011-08-15
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G06F12/02
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.
摘要翻译：存储器系统设置有处理器，主存储器和闪存。通过实现加速和高数据可靠性，可以提高存储系统的性能。存储器系统包括非易失性存储器件和被配置为驱动控制程序以控制非易失性存储器件的控制器。即使在完成对非易失性存储器件的第一访问操作之前，控制程序也执行用于非易失性存储器件的第二访问操作。

13. 发明申请

US20110299338A1 Memory system and method of accessing a semiconductor memory device 有权
公开(公告)号：US20110299338A1
公开(公告)日：2011-12-08
申请号：US13137422
申请日：2011-08-15
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

14. 发明授权

US08705272B2 Memory system and method of accessing a semiconductor memory device 有权
标题翻译：用于访问半导体存储器件的存储器系统和方法
公开(公告)号：US08705272B2
公开(公告)日：2014-04-22
申请号：US13137424
申请日：2011-08-15
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.
摘要翻译：存储器系统设置有处理器，主存储器和闪存。通过实现加速和高数据可靠性，可以提高存储系统的性能。存储器系统包括非易失性存储器件和被配置为驱动控制程序以控制非易失性存储器件的控制器。即使在完成对非易失性存储器件的第一访问操作之前，控制程序也执行用于非易失性存储器件的第二访问操作。

15. 发明授权

US08625344B2 Memory system and method of accessing a semiconductor memory device 有权
公开(公告)号：US08625344B2
公开(公告)日：2014-01-07
申请号：US13137425
申请日：2011-08-15
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

16. 发明申请

US20110307646A1 Memory system and method of accessing a semiconductor memory device 有权
公开(公告)号：US20110307646A1
公开(公告)日：2011-12-15
申请号：US13137409
申请日：2011-08-12
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G06F12/00
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

17. 发明授权

US09032245B2 RAID data management method of improving data reliability and RAID data storage device 有权
标题翻译： RAID数据管理方法提高数据可靠性和RAID数据存储设备
公开(公告)号：US09032245B2
公开(公告)日：2015-05-12
申请号：US13517723
申请日：2012-06-14
申请人： Kangho Roh
发明人： Kangho Roh
IPC分类号： G06F11/10 , G06F11/20
CPC分类号： G06F11/20 , G06F11/108
摘要： A data storage device and a method of managing data in the data storage device to improve data reliability are provided. In the method of managing data, one of control management information about a memory block of nonvolatile memory in which data will be written and control management information about the data are received. A redundant array of independent disks (RAID) parity page ratio is determined according to the control management information. When a data write operation mode is performed, parity data is written in a parity page of the memory block according the RAID parity page ratio. According to some embodiments of the inventive concepts, since a RAID parity page ratio is selectively determined according to control management information, reliability of data is secured or increased.
摘要翻译：提供了一种数据存储装置和数据存储装置中的数据管理方法，以提高数据的可靠性。在管理数据的方法中，接收关于其中写入数据的非易失性存储器的存储块的控制管理信息和关于数据的控制管理信息之一。根据控制管理信息确定独立磁盘冗余阵列（RAID）奇偶校验页比。当执行数据写入操作模式时，奇偶校验数据根据RAID奇偶校验页比率写入存储器块的奇偶校验页。根据本发明构思的一些实施例，由于根据控制管理信息选择性地确定了RAID奇偶校验页比，所以确保或增加了数据的可靠性。

18. 发明授权

US08589618B2 Memory system comprising nonvolatile memory device and controller 失效
标题翻译：包括非易失性存储器件和控制器的存储器系统
公开(公告)号：US08589618B2
公开(公告)日：2013-11-19
申请号：US12726713
申请日：2010-03-18
申请人： Kangho Roh , Hea-Young Roh
发明人： Kangho Roh , Hea-Young Roh
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7203 , G11C7/20 , G11C16/20
摘要： A memory system includes a nonvolatile memory device and a controller. The controller includes a working memory and is configured to control the nonvolatile memory device. The nonvolatile memory device is configured to store drive data required to access the nonvolatile memory device. When an initialization operation of the memory system is performed, the controller activates an operation standby signal after loading a portion of the drive data stored in the nonvolatile memory device into the working memory.
摘要翻译：存储器系统包括非易失性存储器件和控制器。控制器包括工作存储器，并被配置为控制非易失性存储器件。非易失性存储器件被配置为存储访问非易失性存储器件所需的驱动数据。当执行存储器系统的初始化操作时，控制器在存储在非易失性存储器件中的驱动数据的一部分载入工作存储器之后激活操作待机信号。

19. 发明申请

US20130055012A1 DATA MANAGEMENT METHOD OF IMPROVING DATA RELIABILITY AND DATA STORAGE DEVICE 有权
标题翻译：提高数据可靠性和数据存储设备的数据管理方法
公开(公告)号：US20130055012A1
公开(公告)日：2013-02-28
申请号：US13517723
申请日：2012-06-14
申请人： Kangho Roh
发明人： Kangho Roh
IPC分类号： G06F11/20
CPC分类号： G06F11/20 , G06F11/108
摘要： A data storage device and a method of managing data in the data storage device to improve data reliability are provided. In the method of managing data, one of control management information about a memory block of nonvolatile memory in which data will be written and control management information about the data are received. A redundant array of independent disks (RAID) parity page ratio is determined according to the control management information. When a data write operation mode is performed, parity data is written in a parity page of the memory block according the RAID parity page ratio. According to some embodiments of the inventive concepts, since a RAID parity page ratio is selectively determined according to control management information, reliability of data is secured or increased.
摘要翻译：提供了一种数据存储装置和数据存储装置中的数据管理方法，以提高数据的可靠性。在管理数据的方法中，接收关于其中写入数据的非易失性存储器的存储块的控制管理信息和关于数据的控制管理信息之一。根据控制管理信息确定独立磁盘冗余阵列（RAID）奇偶校验页比。当执行数据写入操作模式时，奇偶校验数据根据RAID奇偶校验页比率写入存储器块的奇偶校验页。根据本发明构思的一些实施例，由于根据控制管理信息选择性地确定了RAID奇偶校验页比，所以确保或增加了数据的可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式