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11. 发明授权

US07482845B2 Output buffer circuit 失效
标题翻译：输出缓冲电路
公开(公告)号：US07482845B2
公开(公告)日：2009-01-27
申请号：US11469219
申请日：2006-08-31
申请人： Youn Joong Lee , Won Tae Choi , Chan Woo Park , Byung Hoon Kim
发明人： Youn Joong Lee , Won Tae Choi , Chan Woo Park , Byung Hoon Kim
IPC分类号： H03B1/00
CPC分类号： H03F3/45219 , H03F3/3022 , H03F3/45183 , H03F2203/45118 , H03F2203/45248 , H03F2203/45366 , H03F2203/45536 , H03F2203/45626
摘要： Provided is an output buffer circuit having a slew rate increasing part configured with a switching element. The output buffer circuit can obtain an output voltage having a high slew rate even though a smaller amount of a bias current than that required in a conventional output buffer is used. Therefore, the output buffer circuit can reduce power consumption. In the output buffer circuit with a compensation capacitive load, an input part has two input terminal receiving differential input voltage signals, and an output part increases a gain of the differential input voltages. A current source biases the output part, and a slew rate increasing part is connected to the output part and the compensation capacitive load. The slew rate increasing part includes a switching element to increase a slew rate of the output buffer circuit.
摘要翻译：提供一种具有由开关元件构成的压摆率增加部分的输出缓冲器电路。即使使用比常规输出缓冲器中所需的偏置电流更小的量，输出缓冲器电路也可以获得具有高转换速率的输出电压。因此，输出缓冲电路可以降低功耗。在具有补偿容性负载的输出缓冲电路中，输入部分具有两个输入端接收差分输入电压信号，输出部分增加差分输入电压的增益。电流源偏置输出部分，并且转换速率增加部分连接到输出部分和补偿电容性负载。压摆率增加部分包括提高输出缓冲电路的转换速率的开关元件。

12. 发明授权

US07436033B2 Tri-gated molecular field effect transistor and method of fabricating the same 失效
标题翻译：三门分子场效应晶体管及其制造方法
公开(公告)号：US07436033B2
公开(公告)日：2008-10-14
申请号：US11135285
申请日：2005-05-24
申请人： Chan Woo Park , Sung Yool Choi , Han Young Yu , Ung Hwan Pi
发明人： Chan Woo Park , Sung Yool Choi , Han Young Yu , Ung Hwan Pi
IPC分类号： H01L29/76 , H01L29/94 , H01L35/24 , H01L51/00 , H01L27/01
CPC分类号： B82Y10/00 , H01L51/0545 , H01L51/0595 , Y10S977/936 , Y10S977/937 , Y10S977/938
摘要： A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.
摘要翻译：三门分子场效应晶体管包括形成在衬底上的栅电极，在源极区，漏区和沟道区中具有沟槽，以及至少一个分子插入在沟道区中的源极和漏极之间。可以使栅极电压对通过沟道的电子的影响最大化，并且可以大大提高源极和漏极之间相对于栅极电压提供的电流的变化增益。因此，可以获得具有高功能性和可靠性的分子电子电路。

13. 发明申请

US20070072336A1 Method of manufacturing nano size-gap electrode device 有权
标题翻译：制造纳米尺寸间隙电极器件的方法
公开(公告)号：US20070072336A1
公开(公告)日：2007-03-29
申请号：US11447820
申请日：2006-06-06
申请人： Han Young Yu , In Bok Baek , Chang Geun Ahn , Ki Ju Im , Jong Heon Yang , Ung Hwan Pi , Min Ki Ryu , Chan Woo Park , Sung Yool Choi , Seong Jae Lee
发明人： Han Young Yu , In Bok Baek , Chang Geun Ahn , Ki Ju Im , Jong Heon Yang , Ung Hwan Pi , Min Ki Ryu , Chan Woo Park , Sung Yool Choi , Seong Jae Lee
IPC分类号： H01L51/40 , C25D5/18
CPC分类号： H01L51/105 , B82Y10/00 , H01L51/0023 , H01L51/0595
摘要： Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.
摘要翻译：提供一种制造纳米尺寸间隙电极器件的方法。该方法包括以下步骤：在半导体层上设置浮动的纳米结构; 形成具有至少一个开口图案以与纳米结构相交的掩模层; 以及在通过所述开口图案暴露的所述半导体层上沉积金属以形成电极，使得通过所述纳米结构在所述纳米结构下方提供纳米尺寸间隙。

14. 发明授权

US07138331B2 Method for manufacturing nano-gap electrode device 失效
公开(公告)号：US07138331B2
公开(公告)日：2006-11-21
申请号：US10800704
申请日：2004-03-16
申请人： Chan Woo Park , Sung Yool Choi , Sang Ouk Ryu , Han Young Yu , Ung Hwan Pi , Tae Hyoung Zyung
发明人： Chan Woo Park , Sung Yool Choi , Sang Ouk Ryu , Han Young Yu , Ung Hwan Pi , Tae Hyoung Zyung
IPC分类号： H01L21/4763
CPC分类号： H01L51/0023 , B82Y10/00 , H01L51/0595 , Y10S977/78 , Y10S977/781 , Y10S977/784 , Y10S977/932
摘要： Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

15. 发明授权

US08612897B2 Idle screen arrangement structure and idle screen display method for mobile terminal 有权
标题翻译：移动终端空闲屏幕排列结构和空闲屏幕显示方式
公开(公告)号：US08612897B2
公开(公告)日：2013-12-17
申请号：US11949460
申请日：2007-12-03
申请人： Soon Ok Kim , Chan Woo Park , Seung Hwan Lee
发明人： Soon Ok Kim , Chan Woo Park , Seung Hwan Lee
IPC分类号： G06F3/048
CPC分类号： G06F3/0488 , G06F3/0481 , G06F3/04812 , G06F3/04892 , H04M1/72544 , H04M1/72583 , H04M2250/56
摘要： An idle screen arrangement structure and an idle screen display method for a mobile terminal are provided. The idle screen arrangement structure includes a base idle screen; and a plurality of different extended idle screens arranged in four or eight directions around the base idle screen. A first idle screen of the base idle screen and extended idle screens is displayed on the display unit. In response to an input of a screen-switch event, a second idle screen of the base idle screen and extended idle screens different from the first idle screen is displayed instead of the first idle screen. For example, when the pointer is moved into a screen-switch region on the display unit, the first idle screen is switched to the second idle screen. The base and extended idle screens may have shortcuts to particular functions, and be switched one another in a circular or a non-circular manner.
摘要翻译：提供了一种用于移动终端的空闲屏幕排列结构和空闲屏幕显示方法。空闲屏幕布置结构包括基本空闲屏幕; 以及围绕基本空闲屏幕以四个或八个方向布置的多个不同的延长空闲屏幕。基本空闲屏幕和扩展空闲屏幕的第一空闲屏幕显示在显示单元上。响应于屏幕切换事件的输入，显示基本空闲屏幕的第二空闲屏幕和与第一空闲屏幕不同的扩展空闲屏幕，而不是第一空闲屏幕。例如，当指针移动到显示单元上的屏幕切换区域时，第一空闲屏幕被切换到第二空闲屏幕。基座和延长的空闲屏幕可以具有特定功能的快捷方式，并且以圆形或非圆形方式彼此切换。

16. 发明申请

US20110139637A1 METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR 失效
标题翻译：使用场效应晶体管测量电压点的方法和装置
公开(公告)号：US20110139637A1
公开(公告)日：2011-06-16
申请号：US13058120
申请日：2008-12-16
申请人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
发明人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
IPC分类号： G01N27/403 , G01N27/414
CPC分类号： G01N27/4145
摘要： Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.
摘要翻译：提供了使用场效应晶体管测量等电点的方法和装置。该方法包括提供场效应晶体管，该场效应晶体管包括衬底，设置在衬底上的源电极和漏极彼此间隔开的沟道区，以及在源电极和漏电极之间的沟道区域，提供具有第一浓度到沟道的第一电解质溶液区域，并且测量源极和漏极之间的沟道区的第一电流值，提供具有大于第一浓度的第二浓度的第二电解质溶液，并测量源极之间的沟道区的第二电流值和漏电极，并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。

17. 发明申请

US20110068015A1 BIOSENSOR AND METHOD OF DRIVING THE SAME 失效
标题翻译：生物传感器及其驱动方法
公开(公告)号：US20110068015A1
公开(公告)日：2011-03-24
申请号：US12703939
申请日：2010-02-11
申请人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
发明人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
IPC分类号： G01N27/26 , G01F1/64
CPC分类号： G01N27/4145
摘要： Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.
摘要翻译：提供了一种生物传感器及其驱动方法。生物传感器包括晶体管，其包括基板，该基板包括源极，漏极和形成在源极和漏极之间的沟道，形成在沟道上的栅极绝缘层以及分别与源极和漏极连接的源极和漏极漏极，用于覆盖晶体管的流体线，其与晶体管一起具有内部空间，并且其中包含目标分子的样品溶液流动，形成在流体管线的内壁上的参考电极和附着在该流体管线上的探针分子层参考电极并与靶分子反应。因此，参考电极形成在流体管线的内壁上，使生物装置能够小型化。此外，探针分子形成在参考电极上，以根据参考电极和栅极绝缘层之间的电位的变化来测量阈值电压的变化，从而可以显着提高灵敏度和反应速率。

18. 发明申请

US20110053290A1 LIGHT ADDRESSING BIOSENSOR CHIP AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：光寻址生物传感器芯片及其驱动方法
公开(公告)号：US20110053290A1
公开(公告)日：2011-03-03
申请号：US12858158
申请日：2010-08-17
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chil Seong Ah , An Soon Kim , Bong Kyu Kim , Gun Yong Sung , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chil Seong Ah , An Soon Kim , Bong Kyu Kim , Gun Yong Sung , Seon Hee Park
IPC分类号： G01N33/566 , H01L29/772
CPC分类号： G01N21/75 , B01L3/502761 , B01L2200/0668 , B01L2300/0645 , B01L2400/043 , G01N21/253 , G01N35/0098 , G01N2035/00158 , G01N2035/00237 , H01L27/14601
摘要： Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip.
摘要翻译：提供了一种生物传感器芯片。生物传感器芯片包括多个生物传感器单元，其被布置在矩阵中并且通过寻址外部光选择性地生成和输出感测信号，至少一个感测线与多个生物传感器单元同时连接并且将感测信号从从生物传感器单元中选择的一个，以及从感测线接收感测信号并将感测到的信号输出到外部读取器的输出端子。因此，生物传感器单元在没有单独的驱动单元的情况下被设置在生物传感器芯片中，从而简化了生物传感器芯片的制造工艺。通过外部光选择性地寻址要感测的生物传感器单元，从而可以降低用作一次性芯片的生物传感器芯片的价格。

19. 发明授权

US07893466B2 Semiconductor FET sensor and method of fabricating the same 有权
标题翻译：半导体FET传感器及其制造方法
公开(公告)号：US07893466B2
公开(公告)日：2011-02-22
申请号：US12195302
申请日：2008-08-20
申请人： Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
发明人： Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
IPC分类号： G01N27/403
CPC分类号： G01N27/4145 , H01L29/66818 , H01L29/7853
摘要： Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
摘要翻译：提供了一种半导体场效应晶体管（FET）传感器及其制造方法。该方法包括提供半导体衬底，在半导体衬底上形成具有鳍状结构的传感器结构，将用于电欧姆接触的离子注入到传感器结构中，以及在传感器结构上沉积金属电极，将感测材料固定为特别地将目标材料组合到鳍状结构的两个侧壁表面上，并且在传感器结构上形成通道，使得目标材料通过鳍状结构。

20. 发明申请

US20090152598A1 BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：使用硅纳米管的生物传感器及其制造方法
公开(公告)号：US20090152598A1
公开(公告)日：2009-06-18
申请号：US12240114
申请日：2008-09-29
申请人： In Bok BAEK , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Chil Seong Ah , Chan Woo Park , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
发明人： In Bok BAEK , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Chil Seong Ah , Chan Woo Park , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： G01N27/4145 , G01N27/4146
摘要： Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.
摘要翻译：提供了使用硅纳米线的生物传感器及其制造方法。可以将硅纳米线形成为具有连续重复相同图案的形状，以扩大探针分子固定在硅纳米线上的面积，从而提高检测灵敏度。此外，通过根据目标分子的特性调整硅纳米线的相同图案之间的间隙，而不调整现有技术中的硅纳米线的线宽，可以容易地调整检测灵敏度。此外，可以根据目标分子的特性来调整硅纳米线的相同图案之间的间隙，以区分检测灵敏度，从而同时检测各种检测灵敏度。

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