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11. 发明申请

WO2022223229A1 SEGMENTATION OR CROSS SECTIONS OF HIGH ASPECT RATIO STRUCTURES 审中-公开
公开(公告)号：WO2022223229A1
公开(公告)日：2022-10-27
申请号：PCT/EP2022/057656
申请日：2022-03-23
申请人： CARL ZEISS SMT GMBH
发明人： KLOCHKOV, Dmitry , NEUMANN, Jens Timo , KORB, Thomas , TÖPPE, Eno , PERSCH, Johannes , SRIKANTHA, Abhilash , FREYTAG, Alexander
IPC分类号： G06T7/00 , G06T7/11 , G06T7/12 , G06T7/149 , G06T7/62
摘要： The present invention relates to identifying ring structures in pillars of high aspect ratio (HAR) structures. For segmentation of rings, a machine learning-logic is used. A two-step training method for the machine learning logic is described.

12. 发明申请

WO2020157249A1 VERARBEITUNG VON BILDDATENSÄTZEN 审中-公开
公开(公告)号：WO2020157249A1
公开(公告)日：2020-08-06
申请号：PCT/EP2020/052380
申请日：2020-01-31
申请人： CARL ZEISS SMT GMBH
发明人： NEUMANN, Jens Timo , SRIKANTHA, Abhilash , WOJEK, Christian , KORB, Thomas
IPC分类号： G06T7/00
摘要： Ein Verfahren umfasst das Erhalten eines Bilddatensatzes (100), der Halbleiter-Bauelemente abbildet. Das Verfahren umfasst auch das Anwenden einer hierarchischen Kachelung (201) auf den Bilddatensatz (100). Dabei weist die Kachelung (201) mehrere Kacheln (211-214, 213-1, 213-2, 213-3, 213-2-1, 214-1-1) auf mehreren Hierarchieebenen (251-253) auf. Die Kacheln (211-214, 213-1, 213-2, 213-3, 213-2-1, 214-1-1) auf unterschiedlichen Hierarchieebenen (251-253) weisen unterschiedliche Bildelementgrößen von entsprechenden Bildelementen (290) auf.

13. 发明申请

WO2020070156A1 METHOD OF RECORDING AN IMAGE USING A PARTICLE MICROSCOPE 审中-公开
公开(公告)号：WO2020070156A1
公开(公告)日：2020-04-09
申请号：PCT/EP2019/076637
申请日：2019-10-01
申请人： CARL ZEISS SMT GMBH
发明人： ZEIDLER, Dirk , KORB, Thomas , HÜTHWOHL, Philipp , NEUMANN, Jens Timo , RIEDESEL, Christof , WOJEK, Christian , CORREA, Joaquin , HÖGELE, Wolfgang
IPC分类号： G06T7/246
摘要： A method of recording an image using a particle microscope comprises: recording of plural images of an object, wherein intensity values of image data associated with locations in a coordinate system of the recorded image and with locations on the object; determining regions of interest associated with locations; determining image regions containing regions of interest; determining displacement vectors associated with the image regions determined by correlating the image data associated with a given image region with image data of other image regions also associated with the given region of interest; and generating a resulting image based on the image data of the recorded images, wherein locations in the coordinate system of the resulting image are determined based on the displacement vectors associated with the image regions.

14. 发明申请

WO2014139807A1 ILLUMINATION OPTICAL UNIT FOR A MASK INSPECTION SYSTEM AND MASK INSPECTION SYSTEM WITH SUCH AN ILLUMINATION OPTICAL UNIT 审中-公开
标题翻译：用这种照明光学单元的屏蔽检测系统和屏蔽检测系统的照明光学单元
公开(公告)号：WO2014139807A1
公开(公告)日：2014-09-18
申请号：PCT/EP2014/053927
申请日：2014-02-28
申请人： CARL ZEISS SMT GMBH
发明人： DEGÜNTHER, Markus , KORB, Thomas
IPC分类号： G21K7/00 , G03F1/84 , G21K1/06
CPC分类号： G03F1/84 , G02B6/0096 , G02B17/0605 , G21K1/067 , G21K7/00
摘要： An illumination optical unit (1) for a mask inspection system is used with EUV illumination light (2). A hollow waveguide (9) of the illumination optical unit (1) serves for guiding the illumination light (2). The hollow waveguide (9) has an entry opening (7) for the illumination light (2) and an exit opening (10) for the illumination light (2). An imaging mirror optical unit (11), arranged downstream of the hollow waveguide (9) serves to image the exit opening (10) into an illumination field (4). This results in an illumination optical unit, the throughput of which is optimized for the EUV illumination light.
摘要翻译：用于掩模检查系统的照明光学单元（1）与EUV照明灯（2）一起使用。照明光学单元（1）的中空波导（9）用于引导照明光（2）。中空波导（9）具有用于照明光（2）的入口（7）和用于照明光（2）的出口（10）。布置在中空波导（9）的下游的成像镜光学单元（11）用于将出射孔（10）成像为照明场（4）。这导致了对EUV照明光进行优化的照明光学单元。

15. 发明申请

WO2022058264A1 DEFECT DETECTION FOR SEMICONDUCTOR STRUCTURES ON A WAFER 审中-公开
公开(公告)号：WO2022058264A1
公开(公告)日：2022-03-24
申请号：PCT/EP2021/075043
申请日：2021-09-13
申请人： CARL ZEISS SMT GMBH
发明人： KORB, Thomas , HÜTHWOHL, Philipp , NEUMANN, Jens Timo
IPC分类号： G06K9/62 , G03F7/20 , G06T7/00
摘要： A method (3010) of a defect detection of a plurality of semiconductor structures arranged on a wafer (60) includes obtaining (3101) a microscopic image (42, 80) of the wafer (60), the microscopic image (42, 80) depicting the plurality of semiconductor structures (62, 171, 172). The method also includes obtaining, from a database (55), finger-print data (41) for each base pattern class (151-159) of a set (150) of base pattern classes (151-159) associated with respective one or more semiconductor structures (62, 171, 172) of the plurality of semiconductor structures (62, 171, 172). The method further includes performing the defect detection based on the fingerprint data (41) and the microscopic image (42, 80).

16. 发明申请

WO2021180600A1 METHOD OF CROSS-SECTION IMAGING OF AN INSPECTION VOLUMES IN WAFER 审中-公开
公开(公告)号：WO2021180600A1
公开(公告)日：2021-09-16
申请号：PCT/EP2021/055670
申请日：2021-03-05
申请人： CARL ZEISS SMT GMBH
发明人： KLOCHKOV, Dmitry , FOCA, Eugen , KORB, Thomas , BUXBAUM, Alex , NEUMANN, Jens Timo , HUYNH, Chuong , NIU, Baohua
IPC分类号： H01J37/26 , H01J37/22 , H01J37/305
摘要： The present invention relates to a dual beam device and three-dimensional circuit pattern inspection technique by cross sectioning of inspection volumes with large depth extension exceeding 1μm below the surface of a semiconductor wafer and, more particularly, to a method, computer program product and apparatus for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The invention relates further relates to a 3D volume image generation, a cross section image alignment method utilizing a dual beam device for three-dimensional circuit pattern inspection.

17. 发明申请

WO2021083551A8 CONTACT AREA SIZE DETERMINATION BETWEEN 3D STRUCTURES IN AN INTEGRATED SEMICONDUCTOR SAMPLE 审中-公开
公开(公告)号：WO2021083551A8
公开(公告)日：2021-05-06
申请号：PCT/EP2020/025483
申请日：2020-10-29
申请人： CARL ZEISS SMT GMBH
发明人： BUXBAUM, Alex , AVISHAI, Amir , KLOCHKOV, Dmitry , KORB, Thomas , FOCA, Eugen , LEE, Keumsil
IPC分类号： G06T7/00 , G06T7/30 , G06T7/62 , G06T2207/10061 , G06T2207/30148 , G06T7/0004
摘要： The present invention discloses a method of determining a size of a contact area between a first 3D structure and a second 3D structure in an integrated semiconductor sample, comprising the following steps: obtaining at least a first cross section image and a second cross section image parallel to the first cross section image, wherein obtaining the first and second cross section images includes subsequently removing a cross section surface layer of the integrated semiconductor sample using a focused ion beam to make a new cross section accessible for imaging, and imaging the new cross section of the integrated semiconductor sample with an imaging device; performing image registration of the obtained cross section images and obtaining a 3D data set; determining a 3D model representing the first 3D structure and the second 3D structure in the 3D data set; and determining a relative overlap of the first 3D structure with the second 3D structure based on the 3D model.

18. 发明申请

WO2017097601A1 BELEUCHTUNGSSYSTEM EINER MIKROLITHOGRAPHISCHEN PROJEKTIONSANLAGE UND VERFAHREN ZUM BETREIBEN EINES SOLCHEN SYSTEMS 审中-公开
标题翻译：微型投影系统的照明系统和操作这种系统的方法
公开(公告)号：WO2017097601A1
公开(公告)日：2017-06-15
申请号：PCT/EP2016/078695
申请日：2016-11-24
申请人： CARL ZEISS SMT GMBH
发明人： DEGÜNTHER, Markus , DAVYDENKO, Vladimir , JÜRGENS, Dirk , KORB, Thomas
IPC分类号： G03F7/20
CPC分类号： G03F7/70116 , G03F7/70075 , G03F7/70208
摘要： Ein Beleuchtungssystem einer mikrolithographischen Projektionsanlage (10) hat eine Bildebene (66), in der eine Maske (14) anordenbar ist, und eine erste Objektebene (OP1 ), die zu der Bildebene (66) optisch konjugiert ist. Eine erste Beleuchtungsoptik (42, 50, 52, 58) beleuchtet die erste Objektebene so mit erstem Projektionslicht (301 ), dass das erste Projektionslicht in der Bildebene eine erste Beleuchtungswinkelverteilung hat. Eine zweite Beleuchtungsoptik (42', 51, 70, 72) beleuchtet eine zweite Objektebene, die ebenfalls zu der Bildebene (66) optisch konjugiert ist, so mit zweitem Projektionslicht (302), dass das zweite Projektionslicht in der Bildebene eine zweite Beleuchtungswinkelverteilung hat, die sich von der ersten Beleuchtungswinkelverteilung unterscheidet. Ein optischer Integrator (52), ist ausschließlich im Lichtweg des ersten Projektionslichts (301 ) angeordnet.
摘要翻译：具有
微光刻投射系统（10）的图像平面（66），其中掩模（14）可以被布置的照明系统和第一物体面（OP1），它是共轭的像平面（66），其光学是。第一照明光学系统（42,50,52,58）用第一投影光（301）照射第一物体平面，使得第一投影光在像平面中具有第一照射角度分布。第二照明光学系统（42”，51，70，72）照射的第二对象平面，其是共轭也与图像平面（66）在视觉上，所以与第二投影光（302）在图像平面上的第二投影光具有第二照明角度分布，这不同于第一照明角度分布。一个光学积分器（52）专门设置在第一投影光（301）的光路中。

19. 发明申请

WO2023057520A1 A WORKFLOW TO ALIGN A SEMICONDUCTOR SAMPLE AND/OR TO MEASURE ITS MISALIGNMENT IN A FIB-SEM OR FIB-HIM DEVICE 审中-公开
公开(公告)号：WO2023057520A1
公开(公告)日：2023-04-13
申请号：PCT/EP2022/077713
申请日：2022-10-05
申请人： CARL ZEISS SMT GMBH
发明人： KLOCHKOV, Dmitry , HUYNH, Chuong , KORB, Thomas
IPC分类号： G01N23/2251 , H01J37/00 , G05B15/02 , G06T2207/10072 , G06T2207/30148 , G06T7/0004 , G06T7/13 , H01J2237/31745 , H01J37/304
摘要： A dual-beam device, such as, a scanning electron microscope combined with a focused-ion beam milling column, is employed for a slice-in-image process. Based on one or more images of at least one cross-section of a test volume of a wafer, a wafer tilt is determined.

20. 发明申请

WO2021083581A1 FIB-SEM 3D TOMOGRAPHY FOR MEASURING SHAPE DEVIATIONS OF HIGH ASPECT RATIO STRUCTURES 审中-公开
公开(公告)号：WO2021083581A1
公开(公告)日：2021-05-06
申请号：PCT/EP2020/076332
申请日：2020-09-21
申请人： CARL ZEISS SMT GMBH
发明人： BUXBAUM, Alex , AVISHAI, Amir , KLOCHKOV, Dmitry , KORB, Thomas , FOCA, Eugen , LEE, Keumsil
IPC分类号： G06T7/00 , H01J37/28 , H01J37/22
摘要： The present invention relates to a 3D tomographic inspection method for the inspection of semiconductor features in an inspection volume of a semiconductor wafer. A 3D tomographic image is obtained and a plurality of 2D cross section image is selected. Contours of HAR structures are identified and deviation parameters are extracted. The deviation parameters describe fabrication errors such as displacement, deviation in radius or diameter, area or shape.

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