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11. 发明申请

WO2009045394A1 QUANTUM WELL INTERMIXING 审中-公开
公开(公告)号：WO2009045394A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/011306
申请日：2008-09-30
申请人： CORNING INCORPORATED , LI, Yabo , SONG, Kechang , ZAH, Chung-En
发明人： LI, Yabo , SONG, Kechang , ZAH, Chung-En
IPC分类号： H01L21/18 , H01S5/34 , H01L21/324
CPC分类号： H01S5/34 , B82Y20/00 , H01L21/02546 , H01L21/02664 , H01L29/205 , H01S5/3414
摘要： Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer (1) comprising upper and lower epitaxial layers (10, 13), which each include barrier layers, and a quantum well layer (11) disposed between the upper and lower epitaxial layers (10, 13), applying at least one sacrificial layer (21) over the upper epitaxial layer, and forming a QWI enhanced region and a QWI suppressed region by applying a QWI enhancing layer (31) over a portion of the sacrificial layer, wherein the portion under the QWI enhancing layer (31) is the QWI enhanced region, and the other portion is the QWI suppressed region. The method further comprises the steps of applying a QWI suppressing layer (41) over the QWI enhanced region and the QWI suppressed region, and annealing at a temperature sufficient to cause interdif fusion of atoms between the quantum well layer (11) and the barrier layers of the upper epitaxial layer and the lower epitaxial layer (10, 13).
摘要翻译：量子阱混合（QWI）的方法的实施例包括提供包括上和下外延层（10,13）的晶片（1），每个外延层各自包括阻挡层，以及设置在上和下之间的量子阱层（11）外延层（10,13），通过在牺牲层的一部分上施加QWI增强层（31），在上部外延层上施加至少一个牺牲层（21），并形成QWI增强区域和QWI抑制区域其中QWI增强层（31）下的部分是QWI增强区域，另一部分是QWI抑制区域。该方法还包括以下步骤：在QWI增强区域和QWI抑制区域上施加QWI抑制层（41），并且在足以导致量子阱层（11）和阻挡层（11）之间的原子间隙融合的温度下进行退火的上外延层和下外延层（10,13）。

12. 发明申请

WO2008048474A1 WAVELENGTH CONTROL IN WAVELENGTH SELECTIVE, PHASE, AND GAIN REGIONS OF SEMICONDUCTOR LASERS 审中-公开
标题翻译：波长范围内的波长选择，相位和增益区域的波长控制
公开(公告)号：WO2008048474A1
公开(公告)日：2008-04-24
申请号：PCT/US2007/021772
申请日：2007-10-11
申请人： CORNING INCORPORATED , BHATIA, Vikram , GOLLIER, Jacques , HU, Martin, H. , LOEBER, David, A. , RICKETTS, Daniel, O. , ZAH, Chung-En
发明人： BHATIA, Vikram , GOLLIER, Jacques , HU, Martin, H. , LOEBER, David, A. , RICKETTS, Daniel, O. , ZAH, Chung-En
IPC分类号： H04N9/31 , H01S5/0625
CPC分类号： H01S5/06256 , H01S5/0092 , H01S5/06246 , H01S5/06832 , H01S5/0687 , H04N9/3129
摘要： Particular embodiments of the present invention relate generally to semiconductor lasers and laser scanning systems and, more particularly, to schemes for controlling semiconductor lasers. According to one embodiment of the present invention, a laser is configured for optical emission of encoded data. At least one parameter of the optical emission is a function of a drive current I GAIN injected into the gain section (16) of the semiconductor laser (10) and one or more additional drive currents I PHASE , I DBR. Mode selection in the semiconductor laser is altered by perturbing at least one of the additional drive currents I PHASE , I DBR witn a perturbation signal I PTRB to alter mode selection in the semiconductor laser (10) such that a plurality of different emission modes are selected in the semiconductor laser (10) over a target emission period. In this manner, patterned variations in the wavelength or intensity profile of the laser can be disrupted to disguise patterned flaws that would otherwise be readily noticeable in the output of the laser.
摘要翻译：本发明的具体实施方案一般涉及半导体激光器和激光扫描系统，更具体地，涉及用于控制半导体激光器的方案。根据本发明的一个实施例，激光器被配置用于光发射编码数据。光发射的至少一个参数是注入到半导体激光器（10）的增益部分（16）中的驱动电流I增益的函数，以及一个或多个附加驱动电流I SUB PHASE ，我DBR。半导体激光器中的模式选择通过扰动扰动信号I PTRB中的至少一个附加驱动电流I SUB，DB DB，以改变半导体激光器（10）中的模式选择，使得在目标发射周期中在半导体激光器（10）中选择多个不同的发射模式。以这种方式，可以破坏激光器的波长或强度分布的图案变化来伪装图案化的缺陷，否则在激光器的输出中将容易看出。

13. 发明申请

WO2013142481A2 WAVEGUIDE STRUCTURE FOR MID-IR MULTIWAVELENGTH CONCATENATED DISTRIBUTED-FEEDBACK LASER WITH AN ACTIVE CORE MADE OF CASCADED STAGES 审中-公开
标题翻译：用于中红外多波长的波形结构分布式反馈激光器具有级联的活动核心
公开(公告)号：WO2013142481A2
公开(公告)日：2013-09-26
申请号：PCT/US2013/032944
申请日：2013-03-19
申请人： CORNING INCORPORATED , CANEAU, Catherine Genevieve , XIE, Feng , ZAH, Chung-En
发明人： CANEAU, Catherine Genevieve , XIE, Feng , ZAH, Chung-En
IPC分类号： G02B6/10 , H01S5/20 , G01N21/17
CPC分类号： H01S5/20 , B82Y20/00 , G01N21/17 , G02B6/102 , H01S5/028 , H01S5/06258 , H01S5/1032 , H01S5/1215 , H01S5/3401 , H01S5/3402 , H01S5/34313 , H01S5/4087 , H01S2301/166
摘要： Concatenated distributed feedback lasers having novel waveguides are disclosed. The waveguides allow for coupling of the laser beam between active and passive waveguide structures and improved device design and output efficiency. Methods of making along with methods of using such devices are also disclosed.
摘要翻译：公开了具有新颖波导的并联分布式反馈激光器。波导允许在有源和无源波导结构之间耦合激光束，并改善器件设计和输出效率。还公开了使用这种装置的方法的方法。

14. 发明申请

WO2011133357A2 LASER DIODES COMPRISING QWI OUTPUT WINDOW AND WAVEGUIDE AREAS AND METHODS OF MANUFACTURE 审中-公开
标题翻译：包括QWI输出窗口和波导区域的激光二极管及其制造方法
公开(公告)号：WO2011133357A2
公开(公告)日：2011-10-27
申请号：PCT/US2011/032048
申请日：2011-04-12
申请人： CORNING INCORPORATED , CHANG, Chwan-Yang , CHEN, Chien-Chih , HU, Martin, H. , NGUYEN, Hong, Ky , ZAH, Chung-En
发明人： CHANG, Chwan-Yang , CHEN, Chien-Chih , HU, Martin, H. , NGUYEN, Hong, Ky , ZAH, Chung-En
IPC分类号： B01J19/00 , B01L3/00 , F16L19/02
CPC分类号： B01J19/0093 , B01J2219/0081 , B01L3/502715 , B01L3/563 , B01L3/569 , B01L2200/027
摘要： In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λ L . The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λ QWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λ L . The QWI output window is characterized by a photoluminescent wavelength λ PL . The manufacturing process comprises a λ PL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength and the photoluminescent wavelength λ L of the QWI output window. Additional embodiments are disclosed and claimed.
摘要翻译：根据本公开的一个实施例，提供了制造包括增益部分，QWI输出窗口和QWI波导区域的半导体激光二极管的工艺。使用量子阱混合制造QWI波导区域，并在激光二极管的QWI输出窗口中定义QWI波导部分。 QWI输出窗口对于激光波长λL是透明的。 QWI输出窗口中的QWI波导部分的特征在于能量带隙大于增益部分的能带隙，使得QWI波导部分和QWI输出窗口中的带隙波长λQWI比激光波长短 ·L。 QWI输出窗口的特征在于光致发光波长λPL。该制造工艺包括基于QWI输出窗口的激光波长和光致发光波长λL的比较来确定激光二极管可靠性的λPL筛选方案。公开并要求保护附加实施例。

15. 发明申请

WO2006031984A2 METHOD OF MANUFACTURING AN INP BASED VERTICAL CAVITY SURFACE EMITTING LASER AND DEVICE PRODUCED THEREFROM 审中-公开
标题翻译：制造基于垂直孔表面发射激光器的方法及其制造的器件
公开(公告)号：WO2006031984A2
公开(公告)日：2006-03-23
申请号：PCT/US2005/032984
申请日：2005-09-16
申请人： CORNING INCORPORATED , CANEAU, Catherine G , HALL, Benjamin L , NISHIYAMA, Nobuhiko , ZAH, Chung-En
发明人： CANEAU, Catherine G , HALL, Benjamin L , NISHIYAMA, Nobuhiko , ZAH, Chung-En
IPC分类号： H01S5/00
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306 , H01S5/34313
摘要： A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96. The manufacture of the high index layers with such a band gap creates a sufficient difference in the indices of refraction of the alternating layers in the DBR, while keeping optical absorption low to maintain the reflectivity at least up to the desired maximum temperature, and obviates the need for using a DBR either bonded to the InP substrate, or grown metamorphically on it.
摘要翻译：一种制造具有高反射率分布布拉格反射器（DBR）的磷化铟基垂直腔表面发射激光器（VCSEL）的方法，其特别适用于发射中心波长约1.30微米的光。该方法包括以下步骤：选择特定的工作波长，确定对应于所选择的工作波长的光子能量，以摄氏度选择最大工作温度，以及制造分布布拉格反射器（DBR）的至少一半的高折射率层，的来自AlGaInAs的VCSEL或可以在InP衬底上外延生长的其它材料，以具有等于或大于光子能量（以毫电子伏特）加上最大工作温度加和110之和的带隙除以1.96。具有这种带隙的高折射率层的制造在DBR中的交替层的折射率产生足够的差异，同时保持光吸收低以保持反射率至少达到期望的最高温度，并且消除需要使用结合到InP底物的DBR，或者在其上变质生长。

16. 发明申请

WO2014137886A1 HIGH-POWER LOW-LOSS GRINSCH LASER 审中-公开
标题翻译：大功率低损耗光栅激光
公开(公告)号：WO2014137886A1
公开(公告)日：2014-09-12
申请号：PCT/US2014/019849
申请日：2014-03-03
申请人： CORNING INCORPORATED , HO, Chin-Kuo , HU, Martin Hai , LI, Yabo , LIU, Shiwen , ZAH, Chung-En
发明人： HO, Chin-Kuo , HU, Martin Hai , LI, Yabo , LIU, Shiwen , ZAH, Chung-En
IPC分类号： H01S5/20 , H01S5/34 , H01S5/30
CPC分类号： H01S5/3409 , H01S5/2031 , H01S5/305 , H01S5/34
摘要： A GRINSCH laser having an asymmetric configuration wherein the optical confinement is weighted more to the n-doped multilayer region than to the p-doped multilayer region. The GRINSCH laser can emit laser light at a wavelength λ = 976 nm over a broad area with a beam power of 11.4 W at a 12 A bias current and 20 o C heat sink temperature. Fabry-Perot and distributed Bragg reflector GRINSCH laser configurations are disclosed.
摘要翻译：具有不对称配置的GRINSCH激光器，其中光限制比n掺杂多层区域更多地加权到p掺杂多层区域。 GRINSCH激光器可以在12 A偏置电流和20 oC散热器温度下，在波长λ= 976 nm的宽范围内发射功率为11.4 W的光束功率。披露了Fabry-Perot和布拉格反射镜GRINSCH激光器配置。

17. 发明申请

WO2014085562A1 MULTIWAVELENGTH QUANTUM CASCADE LASER VIA GROWTH OF DIFFERENT ACTIVE AND PASSIVE CORES 审中-公开
标题翻译：通过不同的有源和被动光纤的增长，多波长数量级激光器
公开(公告)号：WO2014085562A1
公开(公告)日：2014-06-05
申请号：PCT/US2013/072195
申请日：2013-11-27
申请人： CORNING INCORPORATED , CANEAU, Catherine Genevieve , XIE, Feng , ZAH, Chung-En
发明人： CANEAU, Catherine Genevieve , XIE, Feng , ZAH, Chung-En
IPC分类号： H01S5/34 , H01S5/40 , H01S5/026 , H01S5/125
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/026 , H01S5/0268 , H01S5/0612 , H01S5/125 , H01S5/305 , H01S5/34313 , H01S5/3434 , H01S5/4068 , H01S5/4087
摘要： Disclosed is a method of forming a laser source capable of producing mid-IR laser radiation comprises growing a first core structure on a substrate, etching away the first core structure in one or more locations, and growing a second core structure on the substrate. At least one of the core structures comprises a quantum cascade gain medium emitting at a frequency within the range from 3-14 μm. Also disclosed is a laser source capable of producing mid-IR laser radiation comprising a quantum- cascade core positioned on a substrate for emitting within the range from 3-14 μm and a second core on the substrate positioned in-plane relative to the first core. The second core is one of a) a passive waveguide core b) a second quantum-cascade core and c) a semiconductor active core region.
摘要翻译：公开了一种形成能够产生中红外激光辐射的激光源的方法，包括在衬底上生长第一芯结构，在一个或多个位置蚀刻掉第一芯结构，并在衬底上生长第二芯结构。核心结构中的至少一个包括以3-14μm范围内的频率发射的量子级联增益介质。还公开了一种能够产生中红外激光辐射的激光源，其包括位于衬底上的量子级联核心，用于在3-14μm的范围内发射，并且在基板上相对于第一核心定位在平面内的第二芯体。第二芯是a）无源波导芯b）第二量子级联核心和c）半导体活性核心区域。

18. 发明申请

WO2013070484A3 MULTI-WAVELENGTH DBR LASER 审中-公开
公开(公告)号：WO2013070484A3
公开(公告)日：2013-05-16
申请号：PCT/US2012/063000
申请日：2012-11-01
申请人： CORNING INCORPORATED , CANEAU, Catherine G. , XIE, Feng , ZAH, Chung-En
发明人： CANEAU, Catherine G. , XIE, Feng , ZAH, Chung-En
IPC分类号： H01S5/06 , H01S5/0625 , H01S5/34
摘要： A multi-wavelength distributed Bragg reflector (DBR) laser diode is provided including front and rear DBR sections and a plurality of dedicated tuning signal control nodes. The front DBR section includes a plurality of front wavelength selective grating sections defining a plurality of distinct grating periodicities λ 1 *, λ 2 *... corresponding to distinct Bragg wavelengths λ S1 *, λ S2 *.... The rear DBR section comprises a plurality of rear wavelength selective grating sections defining a plurality of distinct grating periodicities λ 1 , λ 2 ... corresponding to distinct Bragg wavelengths λ S1 , λ S2 .... The tuning signal control nodes are associated with corresponding front wavelength selective grating sections, rear wavelength selective grating sections, or both, such that tuning signals applied to one or more of the dedicated tuning signal control nodes spectrally aligns select Bragg wavelengths λ S1 *, λ S2 *... of the front DBR section with a selected distinct Bragg wavelengths λ S1 , λ S2 ... of the rear DBR section.

19. 发明申请

WO2012125398A1 MULTI - SECTION QUANTUM CASCADE LASER WITH P-TYPE ISOLATION REGIONS 审中-公开
标题翻译：多部分量子激光与P型隔离区域
公开(公告)号：WO2012125398A1
公开(公告)日：2012-09-20
申请号：PCT/US2012/028238
申请日：2012-03-08
申请人： CORNING INCORPORATED , CANEAU, Catherine G , XIE, Feng , ZAH, Chung-En
发明人： CANEAU, Catherine G , XIE, Feng , ZAH, Chung-En
IPC分类号： H01S5/0625 , H01S5/16 , H01S5/34 , H01S5/223
CPC分类号： H01S5/06256 , B82Y20/00 , H01S5/1017 , H01S5/168 , H01S5/2224 , H01S5/2231 , H01S5/3402
摘要： A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions (40) and a plurality of electrically isolated laser sections (10, 12, 16) extending along a waveguide axis of the laser. An active waveguide core (20) is sandwiched between upper (22, 26) and lower (24) n-type cladding layers and the active core and the upper and lower n-type cladding layers extend through the electrically isolated laser sections of the quantum cascade laser. A portion of the upper n-type cladding layer comprises sufficient p-type dopant to have become p-type and to have become an electrical isolation region, which extends across at least a part of the thickness upper n-type cladding layer along a projection separating the sections of the quantum cascade laser.
摘要翻译：提供了量子级联激光器及其制造方法。量子级联激光器包括沿着激光器的波导轴线延伸的一个或多个p型电隔离区域（40）和多个电隔离的激光器部分（10,12,16）。有源波导芯（20）夹在上（22,26）和下（24）n型包层之间，有源芯和上，下n型包覆层延伸穿过量子的电隔离激光器部分级联激光。上部n型包覆层的一部分包括足够的p型掺杂剂以成为p型并且已经成为电绝缘区域，其沿厚度的上部n型包覆层的至少一部分沿突出部分离量子级联激光器的部分。

20. 发明申请

WO2008033251A1 THERMAL COMPENSATION IN SEMICONDUCTOR LASERS 审中-公开
标题翻译：半导体激光器的热补偿
公开(公告)号：WO2008033251A1
公开(公告)日：2008-03-20
申请号：PCT/US2007/019447
申请日：2007-09-06
申请人： CORNING INCORPORATED , BHATIA, Vikram , HU, Martin H , LIU, Xingsheng , LOEBER, David A , RICKETTS, Daniel O , ZAH, Chung-En
发明人： BHATIA, Vikram , HU, Martin H , LIU, Xingsheng , LOEBER, David A , RICKETTS, Daniel O , ZAH, Chung-En
IPC分类号： H01S5/026 , H01S5/06 , H01S5/0625 , H01S5/024 , H01S5/042 , H01S5/062 , H01S5/22 , H01S5/223 , G02F1/377
CPC分类号： H01S5/0261 , H01S5/024 , H01S5/0425 , H01S5/0612 , H01S5/06213 , H01S5/06251 , H01S5/06256 , H01S5/22 , H01S5/2231
摘要： The present invention relates to methods for modulating a semiconductor laser and wavelength matching to a wavelength converter using monolithic micro-heaters integrated in the semiconductor laser. According to one embodiment of the present invention, a method of compensating for thermally induced patterning effects, e.g. wavelength drift, in a semiconductor laser is provided where the laser's heating element driving current I H is set to a relatively high magnitude when the laser's driving current I D is at a relatively low magnitude. The heating element driving current I H decreases from said relatively high magnitude to said relatively low magnitude at a time Δt prior to an increase in said laser driving current I D from said relatively low magnitude to said relatively high magnitude. The semiconductor laser may be a DBR laser diode comprising a wavelength selective region (12), a phase matching region (14), and a gain region (16), each region provided with a pair of heating element strips (62,64).
摘要翻译：本发明涉及使用集成在半导体激光器中的单块微型加热器来调制半导体激光器和波长转换器的波长匹配的方法。根据本发明的一个实施例，一种补偿热诱导图案化效应的方法，例如，提供了在半导体激光器中，当激光器的驱动电流I SUB相对于激光器的加热元件驱动电流I H H被设定为相对高的幅度时，低幅度在所述激光器驱动电流I SUB从所述激光器驱动电流I SUB增加之前的时间Δt，加热元件驱动电流I H H从所述相对高的幅度减小到所述相对低的幅度相对较低的幅度到相对较高的幅度。半导体激光器可以是包括波长选择区域（12），相位匹配区域（14）和增益区域（16）的DBR激光二极管，每个区域设置有一对加热元件条（62,64）。

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