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11. 发明专利

JP2002141327A METHOD FOR MANUFACTURING CRYSTAL THIN FILM 失效
公开(公告)号：JP2002141327A
公开(公告)日：2002-05-17
申请号：JP2000333052
申请日：2000-10-31
申请人： CANON KK
发明人： MIZUTANI MASAKI , UKIYO NORITAKA , YONEHARA TAKAO , SAKAGUCHI KIYOBUMI
IPC分类号： H01L21/02 , H01L21/208 , H01L21/306 , H01L21/3063 , H01L31/04 , H01L33/34 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystal thin film by which a crystal thin film formed on a substrate can be separated without being damaged and the substrate can be used several times without being damaged. SOLUTION: In a first step, a silicon substrate 1 with covered periphery is subjected to anode chemical conversion in a first current density for forming a first porous layer 5 on the main region of the substrate 1 except its periphery. Then the cover of the periphery of the substrate 1 is removed and the substrate 1 is subjected to anode chemical conversion in a second current density to form second porous layers 6 and 6' in its periphery and in its main region. After that, in a second step, a crystal thin film 3 is formed by a liquid phase growth method in the main region of the substrate 1. In the first step, after forming the second porous layers 6 and 6', the main region is made more flat and smooth than the periphery by hydrogen annealing. After the second step, in a third step, the crystal thin film 3 is separated from the substrate 1.

12. 发明专利

JP2002141295A METHOD AND DEVICE FOR GROWING LIQUID PHASE 失效
公开(公告)号：JP2002141295A
公开(公告)日：2002-05-17
申请号：JP2000333056
申请日：2000-10-31
申请人： CANON KK
发明人： SAITO TETSUO , IWAGAMI MAKOTO , SHOJI TATSUMI , MIZUTANI MASAKI , YOSHINO TOSHIHITO , IWANE MASAAKI , NISHIDA AKIYUKI , UKIYO NORITAKA
IPC分类号： C30B19/02 , H01L21/208 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a method for producing the device of proper quality, when producing the large area device, and to provide a liquid phase growing device used for the same. SOLUTION: The trap of a granular or needle-like solid material is arranged at the tip of a susceptor immersed in metal solution (indium solution). The floating solid material is fully removed, and a substrate is immersed in metal solution, and then a semiconductor thin film is grown on the substrate.

13. 发明专利

JP2000349066A METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SOLAR BATTERY, AND ANODIZATION DEVICE 失效
公开(公告)号：JP2000349066A
公开(公告)日：2000-12-15
申请号：JP16111199
申请日：1999-06-08
申请人： CANON KK
发明人： NISHIDA AKIYUKI , UKIYO NORITAKA , IWASAKI YUKIKO , SAKAGUCHI KIYOBUMI
IPC分类号： H01L21/3063 , C25D11/32 , H01L21/02 , H01L27/12 , H01L31/04 , H01L31/18
摘要： PROBLEM TO BE SOLVED: To form a device with improved characteristics without any cracks and crevices by eliminating a thin-film crystal semiconductor layer at the peripheral part of a first substrate by etching using electrolytic polishing. SOLUTION: A silicon single-crystal substrate 101 is mounted to a specific position in an anodization device, and a silicon layer 104 is allowed to oppose a negative electrode I in an HF solution. The negative electrode is in nearly the same shape as a positive electrode that the negative electrode is in contact on the reverse side of the silicon single-crystal substrate 101. For example, a strip of ring or polygonal shape is formed along the peripheral part of the silicon single-crystal substrate 101. Current is allowed to flow between the electrodes and etching is made in an electrolytic polishing mode, the silicon layer 104 at the peripheral part of the silicon single-crystal substrate 101 or one portion or all of the silicon layer 104 and a porous layer 103 is eliminated. In this case, the elimination of only the silicon layer 104, one portion of the silicon layer 104 and the porous layer 103, or the like can be selected according to the separation strength of the porous layer.

14. 发明专利

JP2000100738A CRYSTAL GROWTH METHOD, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2000100738A
公开(公告)日：2000-04-07
申请号：JP18846699
申请日：1999-07-02
申请人： CANON KK
发明人： IWANE MASAAKI , NISHIDA AKIYUKI , UKIYO NORITAKA , IWASAKI YUKIKO , MIZUTANI MASAKI , NAKAGAWA KATSUMI
IPC分类号： H01L21/205 , C30B19/02 , C30B19/12 , C30B29/06 , H01L21/20 , H01L21/208 , H01L31/04 , H01L31/18
摘要： PROBLEM TO BE SOLVED: To realize a method in which epitaxial growth of a crystal Si layer which completely covers a porous Si layer is made on the porous silicon(Si) layer without abnormal growth. SOLUTION: Epitaxial growth of a crystal Si layer is made on a substrate having a porous Si layer on the surface. When epitaxial growth is conducted in liquid phase, Si material is melted beforehand at a high temperature into a melt and an Si substrate for growing is immersed in the melt 14. Epitaxial growth of Si which is deposited from the melt 14 is made on the Si substrate by gradually decreasing temperature. In this case the substrate of which major surface is (11) surface is used as the Si substrate.

15. 发明专利

JP2003092422A METHOD OF MANUFACTURING SOLAR CELL MODULE 审中-公开
公开(公告)号：JP2003092422A
公开(公告)日：2003-03-28
申请号：JP2001283473
申请日：2001-09-18
申请人： CANON KK
发明人： MIZUTANI MASAKI , IWASAKI YUKIKO , UKIYO NORITAKA , NISHIDA AKIYUKI , IWAGAMI MAKOTO
IPC分类号： H01L31/042 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a solar cell element formed on a base which removes a jig pasted for peeling the element from the base or the stripped base by a simple method, without deterioration of the power generation efficiency of the element. SOLUTION: The method comprises a step of adhering a first board 5 through a first adhesive layer 4 to a solar cell element 3 formed through a separation layer 2 on a base 1, and separating it at the separating layer 2; and a step of adhering a second board 6 through a second adhesive layer 7 to the side from which the element 3 is separated, and separating the first board 5 at the adhesive layer 7. The first adhesive layer 4 uses a thermoplastic resin material, and the second adhesive layer 7 uses a material having a hardening temperature higher than that of the first adhesive layer 4 so that the first adhesive layer 4 is softened during adhering of the second board 6.

16. 发明专利

JP2002203800A WAFER CASSETTE, DEVICE USING THE SAME AND LIQUID PHASE GROWTH METHOD 审中-公开
公开(公告)号：JP2002203800A
公开(公告)日：2002-07-19
申请号：JP2001333033
申请日：2001-10-30
申请人： CANON KK
发明人： IWANE MASAAKI , UKIYO NORITAKA , YOSHINO TOSHIHITO , MIZUTANI MASAKI , NISHIDA AKIYUKI , SAITO TETSUO , IWAGAMI MAKOTO , SHOJI TATSUMI
IPC分类号： C30B19/06 , C30B29/06 , H01L21/208 , H01L21/673 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provided a method and a device for preventing the growth of a film at the entire rear and side surfaces of an Si wafer and at peripheral section of a surface. SOLUTION: The device dips the Si wafer 6 supported by tools 21, 24 and 25 into a solvent 4, and grows a film on the Si wafer 6 due to liquid phase growth from the solvent. Wafer cassettes 21, 22, 23, 24, 25 and 30 have a counter sink (recess) 31 corresponding to the shape of the Si wafer 6, and have a wafer- backing pedestal (retention member) 25 for fitting the Si wafer 6 to the counter sink (recess) 31 and a wafer cover (cover) 24 where an opening 27 on a smaller surface than the Si wafer 6 is opened. The Si wafer 6 is pressed at the peripheral section. In this case, a plurality of wafer-backing pedestals (retention members) 25 is available, is arranged in parallel, and is supported by a post 21. A groove 28 is present at the connection section with the wafer-backing pedestals (retention members) 25 of the post 21, and the wafer cover (cover) 24 is fitted to the groove 28.

17. 发明专利

JP2002100791A MANUFACTURING METHOD FOR SOLAR BATTERY 失效
公开(公告)号：JP2002100791A
公开(公告)日：2002-04-05
申请号：JP2000287208
申请日：2000-09-21
申请人： CANON KK
发明人： IWASAKI YUKIKO , NISHIDA AKIYUKI , SAKAGUCHI KIYOBUMI , YONEHARA TAKAO , UKIYO NORITAKA
IPC分类号： H01L21/3063 , H01L21/02 , H01L21/205 , H01L27/12 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method with which a high-performance solar battery can be obtained with proper yield at a low cost, while a thin-film semiconductor is reduced in chapping, crackings, and defects and can be processed into an arbitrary shape. SOLUTION: This method has at least a stage, where a porous layer is formed on at least one surface of a base body, by anodizing the surface of the 1st base body, a stage where at least a semiconductor layer is formed on the porous layer, a stage where at least a 2nd base body is adhered onto the surface of the semiconductor layer, a stage where the semiconductor layer and 1st base body are separated via the porous layer, and a stage where the peripheral part of at least the separated semiconductor layer is removed.

18. 发明专利

JP2001111081A SOLAR CELL MODULE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2001111081A
公开(公告)日：2001-04-20
申请号：JP2000231327
申请日：2000-07-31
申请人： CANON KK
发明人： TAKAI YASUYOSHI , NAKAGAWA KATSUMI , IWANE MASAAKI , IWASAKI YUKIKO , UKIYO NORITAKA
IPC分类号： C30B29/06 , C30B29/64 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a thin film single crystal solar cell module and a manufacturing method for the solar cell module having a high quality of superior durability and reliability without generating a failure or a crack when the solar cell module having a thin film single crystal layer is manufactured or used. SOLUTION: A solar cell module using a photo electromotive force element at a part at least of which has a thin film crystal and having a flexibility, is so made as the direction of easily warping which the module inherently has, not to be coincident with the direction of most easily cleaving for the thin film single crystal.

19. 发明专利

JP2000349319A MANUFACTURE OF SEMICONDUCTOR SUBSTRATE AND SOLAR BATTERY 失效
公开(公告)号：JP2000349319A
公开(公告)日：2000-12-15
申请号：JP16111099
申请日：1999-06-08
申请人： CANON KK
发明人： IWASAKI YUKIKO , UKIYO NORITAKA , NISHIDA AKIYUKI , SAKAGUCHI KIYOBUMI
IPC分类号： H01L21/205 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To efficiently form a high-performance semiconductor substrate and a solar battery by reducing cracks and defects in a thin-film semiconductor and separating the semiconductor with a smaller force. SOLUTION: Only a single-crystal silicon layer around a region to be separated depending on the separation strength of a porous layer, or, in addition, one portion or the entire portion of the porous layer is eliminated, a support substrate 106 is glued to a silicon layer 104 via an adhesive layer 105 so that no support substrate 106 adheres to the elimination part, and then physical separation force is applied to the porous layer 103, thus separating the silicon layer 104 from a silicon wafer 101 and transferring it onto the support substrate 106. Then, cracks and damage to a thin-film semiconductor layer can be reduced and at the same time force can be applied to a part that can be easily separated on the porous layer directly for separating with small force. Therefore, a porous residue 107 remaining on the surface of the thin-film single-crystal silicon after transferring is eliminated by etching or the like on request as a semiconductor substrate or a solar battery.

20. 发明专利

JPH11238691A METHOD OF GROWING LIQUID PHASE AND GROWTH SYSTEM THEREOF 失效
公开(公告)号：JPH11238691A
公开(公告)日：1999-08-31
申请号：JP32938898
申请日：1998-11-19
申请人： CANON KK
发明人： IWANE MASAAKI , TANIGAWA ISAO , SHOJI TATSUMI , NAKAGAWA KATSUMI , NISHIDA AKIYUKI , UKIYO NORITAKA
IPC分类号： C30B19/06 , H01L21/208 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a liquid phase growth system of dipping type and a method of growing the liquid phase, capable of forming a semiconductor film appropriate for mass production of a large area device such as solar cell and the like. SOLUTION: This method of growing the liquid phase grows the liquid phase of semiconductor on a plurality of wafers with use of a plurality of liquid phase growth chambers 3, 4, and 5, and a plurality of growth chambers 3 and 5 of the dipping type liquid phase growth system. There are the liquid phase growth chamber 4 and an annealing chamber 2 in the dipping type liquid phase growth system. The wafer used for the liquid phase growth of semiconductor in the liquid phase growth chamber 4 differs from the wafer used for the annealing treatment in the annealing chamber 2. A semiconductor material is dissolved in the solvent in the liquid phase growth chamber 4, and the wafer is processed by the annealing treatment in the annealing chamber 2.

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