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11. 发明申请

WO2010126570A2 BIFACIAL SOLAR CELLS WITH BACK SURFACE DOPING 审中-公开
标题翻译：具有背面表面的双极太阳能电池
公开(公告)号：WO2010126570A2
公开(公告)日：2010-11-04
申请号：PCT/US2010/001173
申请日：2010-04-19
申请人： CALISOLAR, INC. , KAES, Martin , BORDEN, Peter , OUNADJELA, Kamel , KRAENZL, Andreas , BLOSSE, Alain , KIRSCHT, Fritz G.
发明人： KAES, Martin , BORDEN, Peter , OUNADJELA, Kamel , KRAENZL, Andreas , BLOSSE, Alain , KIRSCHT, Fritz G.
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region (107) located on the front surface of the substrate (101), formed for example by a phosphorous diffusion step. The back surface includes a doped region (103), the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids (111/113) are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.
摘要翻译：提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板（101）的前表面上的有源区（107），例如通过磷扩散步骤形成。背面包括掺杂区域（103），该掺杂区域具有与衬底相同的导电性但具有较高的掺杂水平。形成接触网格（111/113），例如通过丝网印刷。使用激光划片实现前结隔离。

12. 发明申请

WO2009114446A3 A SOLAR CELL AND FABRICATION METHOD USING CRYSTALLINE SILICON BASED ON LOWER GRADE FEEDSTOCK MATERIALS 审中-公开
公开(公告)号：WO2009114446A3
公开(公告)日：2009-09-17
申请号：PCT/US2009/036469
申请日：2009-03-09
申请人： CALISOLAR, INC. , OUNADJELA, Kamel , RAKOTONIAINA, Jean, Patrice , KAES, Martin , ZICKERMANN, Dirk , BLOSSE, Alain , ZERGA, Abdellatif , HEUER, Matthias , KIRSCHT, Fritz
发明人： OUNADJELA, Kamel , RAKOTONIAINA, Jean, Patrice , KAES, Martin , ZICKERMANN, Dirk , BLOSSE, Alain , ZERGA, Abdellatif , HEUER, Matthias , KIRSCHT, Fritz
IPC分类号： H01L31/00
摘要： Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti- reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form back surface field temperatures sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the coating. The process may anneal the low contact resistance metal layer to form n- doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g.,

13. 发明公开

EP2425456A2 BIFACIAL SOLAR CELLS WITH OVERLAID BACK GRID SURFACE 审中-公开
标题翻译：带有太阳能电池DARÜBERGELEGTEMBACK GRID两岸
公开(公告)号：EP2425456A2
公开(公告)日：2012-03-07
申请号：EP10770046.0
申请日：2010-04-19
申请人： Calisolar, Inc. , Kaes, Martin , Borden, Peter , Ounadjela, Kamel , Kraenzl, Andreas , Blosse, Alain , Kirscht, Fritz G.
发明人： KAES, Martin , BORDEN, Peter , OUNADJELA, Kamel , KRAENZL, Andreas , BLOSSE, Alain , KIRSCHT, Fritz G.
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region (103) located on the front surface of the substrate (101), formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers (105/107) are deposited on the front and back surfaces. Contact grids (109/111) are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.

14. 发明公开

EP2425455A2 BIFACIAL SOLAR CELLS WITH BACK SURFACE DOPING 审中-公开
标题翻译：带有太阳能电池背部两侧资金
公开(公告)号：EP2425455A2
公开(公告)日：2012-03-07
申请号：EP10770045.2
申请日：2010-04-19
申请人： Calisolar, Inc. , Kaes, Martin , Borden, Peter , Ounadjela, Kamel , Kraenzl, Andreas , Blosse, Alain , Kirscht, Fritz G.
发明人： KAES, Martin , BORDEN, Peter , OUNADJELA, Kamel , KRAENZL, Andreas , BLOSSE, Alain , KIRSCHT, Fritz G.
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region (107) located on the front surface of the substrate (101), formed for example by a phosphorous diffusion step. The back surface includes a doped region (103), the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids (111/113) are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.

15. 发明申请

WO2012071531A1 GERMANIUM ENRICHED SILICON FOR SOLAR CELLS 审中-公开
标题翻译：用于太阳能电池的富锗硅
公开(公告)号：WO2012071531A1
公开(公告)日：2012-05-31
申请号：PCT/US2011/062075
申请日：2011-11-23
申请人： CALISOLAR, INC. , KIRSCHT, Fritz G. , HEUER, Matthias , KAES, Martin , OUNADJELA, Kamel
发明人： KIRSCHT, Fritz G. , HEUER, Matthias , KAES, Martin , OUNADJELA, Kamel
IPC分类号： C30B11/00 , C30B11/04 , C30B11/08 , C30B13/00 , C30B13/08 , C30B13/10 , C30B15/00 , C30B15/02 , C30B15/04 , C30B29/06 , C30B29/52
CPC分类号： C30B13/10 , C30B11/00 , C30B11/04 , C30B11/08 , C30B13/00 , C30B13/08 , C30B15/00 , C30B15/02 , C30B15/04 , C30B29/06 , C30B29/52 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.
摘要翻译：描述了使用各种等级的硅原料形成硅锭和晶体的技术。一个常见的特征是向熔体中加入预定量的锗，并进行结晶以将锗掺入各自晶体硅材料的硅晶格中。这种并入的锗导致各种硅材料特性的改进，包括增加的材料强度和改善的电性能。这导致在太阳能电池制造中应用这种材料以及从这些太阳能电池制造模块方面的积极作用。

16. 发明申请

WO2010126572A2 BIFACIAL SOLAR CELLS WITH BACK SURFACE REFLECTOR 审中-公开
标题翻译：具有背面反射器的双极太阳能电池
公开(公告)号：WO2010126572A2
公开(公告)日：2010-11-04
申请号：PCT/US2010/001175
申请日：2010-04-19
申请人： CALISOLAR, INC. , KAES, Martin , BORDEN, Peter , OUNADJELA, Kamel , KRAENZL, Andreas , BLOSSE, Alain , KIRSCHT, Fritz, G.
发明人： KAES, Martin , BORDEN, Peter , OUNADJELA, Kamel , KRAENZL, Andreas , BLOSSE, Alain , KIRSCHT, Fritz, G.
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes a back surface contact grid (113) and an overlaid blanket metal reflector (117). A doped amorphous silicon layer is interposed between the contact grid and the blanket layer.
摘要翻译：提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括背面接触网格（113）和覆盖的橡皮布金属反射器（117）。掺杂的非晶硅层介于接触网格和覆盖层之间。

17. 发明申请

WO2010126571A3 BIFACIAL SOLAR CELLS WITH OVERLAID BACK GRID SURFACE 审中-公开
公开(公告)号：WO2010126571A3
公开(公告)日：2010-11-04
申请号：PCT/US2010/001174
申请日：2010-04-19
申请人： CALISOLAR, INC. , KAES, Martin , BORDEN, Peter , OUNADJELA, Kamel , KRAENZL, Andreas , BLOSSE, Alain , KIRSCHT, Fritz G.
发明人： KAES, Martin , BORDEN, Peter , OUNADJELA, Kamel , KRAENZL, Andreas , BLOSSE, Alain , KIRSCHT, Fritz G.
IPC分类号： H01L31/042 , H01L31/18
摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region (103) located on the front surface of the substrate (101), formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers (105/107) are deposited on the front and back surfaces. Contact grids (109/111) are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.

18. 发明申请

WO2013112884A2 METHOD FOR PURIFICATION OF SILICON 审中-公开
标题翻译：硅的净化方法
公开(公告)号：WO2013112884A2
公开(公告)日：2013-08-01
申请号：PCT/US2013/023215
申请日：2013-01-25
申请人： TURENNE, Alain , SMITH, Dan , DASTGIRI, Damon , KIRSCHT, Fritz G. , TUMMILLO, Anthony , ZHANG, Chunhui , OUNADJELA, Kamel
发明人： TURENNE, Alain , SMITH, Dan , DASTGIRI, Damon , KIRSCHT, Fritz G. , TUMMILLO, Anthony , ZHANG, Chunhui , OUNADJELA, Kamel
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , C30B11/002 , C30B11/003 , C30B11/02 , C30B33/00
摘要： The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.
摘要翻译：本发明涉及硅的纯化。本发明提供了一种硅的纯化方法。该方法包括从包含铝的熔融溶剂中重结晶起始材料硅以提供最终的重结晶硅晶体。该方法还包括用酸水溶液洗涤最终的重结晶硅晶体以提供最终的酸洗硅。该方法还包括定向凝固最终的酸洗硅以提供最终的定向凝固硅晶体。

19. 发明申请

WO2004079744A2 MAGNETIC MEMORY CELL JUNCTION AND METHOD FOR FORMING A MAGNETIC MEMORY CELL JUNCTION 审中-公开
标题翻译：用于形成磁记忆细胞结的磁记忆体细胞连接和方法
公开(公告)号：WO2004079744A2
公开(公告)日：2004-09-16
申请号：PCT/US2004/006149
申请日：2004-03-02
申请人： SILICON MAGNETIC SYSTEMS , CHEN, Eugene, Y. , OUNADJELA, Kamel , KULA, Witold , WOLFMAN, Jerome, S.
发明人： CHEN, Eugene, Y. , OUNADJELA, Kamel , KULA, Witold , WOLFMAN, Jerome, S.
IPC分类号： G11C
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： A method for patterning a magnetic memory cell junction is provided herein, which includes etching exposed portions of a stack of layers to a level spaced above a tunneling barrier layer of the stack of layers. In addition, the method may include implanting dopants into exposed portions of the stack of layers. For example, the method may include oxidizing and/or nitriding the exposed portions of the stack of layers. In some embodiments, the steps of etching and implanting dopants may form an upper portion of the magnetic cell junction. Alternatively, the method may include alternating the steps of etching and implanting dopants throughout the thickness of the exposed portions of the stack of layers. In either case, the stack of layers may include a magnetic layer which includes a material adapted to prevent the introduction of dopants underlying the tunneling barrier layer during the step of implanting.
摘要翻译：本文提供了用于图案化磁存储器单元结的方法，其包括将一叠层的暴露部分蚀刻到层叠层的隧道势垒层上方的水平面上。此外，该方法可以包括将掺杂剂注入到层叠层的暴露部分中。例如，该方法可以包括氧化和/或氮化层叠层的暴露部分。在一些实施例中，蚀刻和注入掺杂剂的步骤可以形成磁性细胞结的上部。或者，该方法可以包括在堆叠层的暴露部分的整个厚度上交替蚀刻和注入掺杂剂的步骤。在任一情况下，层叠层可以包括磁性层，其包括适于防止在植入步骤期间引入隧道势垒层下方的掺杂剂的材料。

20. 发明申请

WO2013040410A1 DIRECTIONAL SOLIDIFICATION SYSTEM AND METHOD 审中-公开
标题翻译：方向性固定系统及方法
公开(公告)号：WO2013040410A1
公开(公告)日：2013-03-21
申请号：PCT/US2012/055510
申请日：2012-09-14
申请人： SILICOR MATERIALS INC. , NOURI, Abdallah , OUNADJELA, Kamel
发明人： NOURI, Abdallah , OUNADJELA, Kamel
IPC分类号： C01B33/037 , C30B11/00 , C30B29/06 , C30B28/06 , B22D27/04
CPC分类号： B22D27/045 , C01B33/02 , C01B33/037 , C30B11/002 , C30B11/003 , C30B23/00 , C30B23/025 , C30B29/06 , C30B29/36 , C30B35/002
摘要： The present invention relates to an apparatus and method for purifying materials using a rapid directional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during directional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells. A mold (801) is defined by a wall structure (802) and a base (804). The system (800) also includes a top heater (820) to control the thermal gradient and the cooling rate of the molten silicon (801). The wall structure (801) includes a taper in thickness from a rim of the mold (801) to an interface with the bottom (804).
摘要翻译：本发明涉及使用快速定向凝固来净化材料的装置和方法。所示的装置和方法提供了在定向凝固期间对温度梯度和冷却速率的控制，这导致了更高纯度的材料。本发明的装置和方法可用于制造用于太阳能电池等太阳能应用的硅材料。模具（801）由壁结构（802）和基底（804）限定。系统（800）还包括用于控制熔融硅（801）的热梯度和冷却速率的顶部加热器（820）。壁结构（801）包括从模具（801）的边缘到与底部（804）的界面的厚度的锥形。

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