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11. 发明授权

US4971200A Packaging system for string lights 失效
标题翻译：灯串包装系统
公开(公告)号：US4971200A
公开(公告)日：1990-11-20
申请号：US419200
申请日：1989-10-10
申请人： Chen-Hsien Huang , Chia-Ho Chen
发明人： Chen-Hsien Huang , Chia-Ho Chen
IPC分类号： B65D21/02 , B65D85/42
CPC分类号： B65D21/0235 , B65D85/42
摘要： A series of lights are mounted in side-by-side relation on a plastic support module. A second module is partially positioned in overlapping relation with the first module and a pair of holes on the second module are positioned onto the upper ends of a pair of posts on the first module, with the electrical wires of the lights on the first module being clamped between the overlapping module areas.
摘要翻译：一系列灯并排安装在塑料支架上。第二模块部分地定位成与第一模块重叠，并且第二模块上的一对孔位于第一模块上的一对柱的上端，第一模块上的灯的电线为夹在重叠模块区域之间。

12. 发明授权

US09287154B2 UV curing system for semiconductors 有权
标题翻译：半导体UV固化系统
公开(公告)号：US09287154B2
公开(公告)日：2016-03-15
申请号：US13486025
申请日：2012-06-01
申请人： Ming Huei Lien , Chia-Ho Chen , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Ming Huei Lien , Chia-Ho Chen , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/677 , H01L21/68 , H01L21/67 , H01L21/3105
CPC分类号： H01L21/6776 , H01L21/3105 , H01L21/67115
摘要： Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.
摘要翻译：公开了用于处理诸如晶片的半导体衬底的紫外（UV）固化系统的实施例。固化系统通常包括处理室，用于在室中保持晶片的晶片支撑件，设置在室上方的UV辐射源，以及散布在辐射源和晶片支撑件之间的UV透明窗口。在一个实施例中，晶片支撑件由带式输送机提供，其可操作以在UV固化期间将晶片传送通过室。在另一个实施例中，UV辐射源是可移动的灯单元，其移动穿过室的顶部以照射晶片。在另一个实施方案中，UV透明窗口包括UV辐射调节剂，其降低位于调节剂下方的晶片部分上的UV辐射强度。各种实施例通过使晶片上的UV强度水平归一化来增强晶片固化均匀性。

13. 发明授权

US08916480B2 Chemical vapor deposition film profile uniformity control 有权
标题翻译：化学气相沉积膜轮廓均匀性控制
公开(公告)号：US08916480B2
公开(公告)日：2014-12-23
申请号：US13313106
申请日：2011-12-07
申请人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
发明人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/31
CPC分类号： C23C16/44 , C23C16/45565
摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.
摘要翻译：本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓。组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。

14. 发明授权

US08896136B2 Alignment mark and method of formation 有权
标题翻译：对齐标记和形成方法
公开(公告)号：US08896136B2
公开(公告)日：2014-11-25
申请号：US12827563
申请日：2010-06-30
申请人： Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人： Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号： H01L23/544 , H01L29/40 , H01L23/48 , H01L23/52 , H01L21/76 , H01L21/00 , H01L21/4763 , H01L21/44 , H01L21/683
CPC分类号： H01L23/481 , H01L21/30604 , H01L21/6835 , H01L21/76831 , H01L21/76877 , H01L21/76898 , H01L23/544 , H01L2221/68327 , H01L2223/54426 , H01L2224/13
摘要： In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.
摘要翻译：根据实施例，结构包括具有第一区域和第二区域的基板; 穿过基板的第一区域的贯穿基板通孔（TSV）; 在所述衬底的所述第二区域上方的隔离层，所述隔离层具有凹部; 以及在所述隔离层的所述凹部中的导电材料，所述隔离层设置在所述凹部中的所述导电材料和所述基板之间。

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