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11. 发明授权

US10644035B2 Array substrate, fabrication method thereof, driving transistor and display panel 有权
公开(公告)号：US10644035B2
公开(公告)日：2020-05-05
申请号：US15769492
申请日：2017-11-03
申请人： BOE TECHNOLOGY GROUP CO., LTD. , Beijing BOE Display Technology Co., Ltd.
发明人： Wenqing Xu , Mingxuan Liu , Jing Wang , Xiaoxiang Zhang , Huibin Guo
IPC分类号： H01L27/14 , H01L27/12 , H01L29/786 , H01L29/66 , G09G3/3225 , H01L27/32
CPC分类号： H01L27/1229 , G09G3/3225 , H01L27/124 , H01L27/1237 , H01L27/1285 , H01L27/3276 , H01L29/66757 , H01L29/78675 , G09G2300/0426 , G09G2300/0439
摘要： An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.

12. 发明申请

US20190081084A1 ARRAY SUBSTRATE, FABRICATION METHOD THEREOF, DRIVING TRANSISTOR AND DISPLAY PANEL 审中-公开
公开(公告)号：US20190081084A1
公开(公告)日：2019-03-14
申请号：US15769492
申请日：2017-11-03
申请人： BOE TECHNOLOGY GROUP CO., LTD. , Beijing BOE Display Technology Co., Ltd.
发明人： Wenqing Xu , Mingxuan Liu , Jing Wang , Xiaoxiang Zhang , Huibin Guo
IPC分类号： H01L27/12 , H01L27/32 , G09G3/3225
摘要： An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.

13. 发明授权

US09524991B2 Array substrate and manufacturing method thereof and display apparatus 有权
标题翻译：阵列基板及其制造方法和显示装置
公开(公告)号：US09524991B2
公开(公告)日：2016-12-20
申请号：US14422343
申请日：2014-06-30
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Wenqing Xu , Hui Tian , Xiaowei Xu
IPC分类号： H01L27/12 , H01L27/32 , H01L29/786
CPC分类号： H01L27/1255 , H01L27/1222 , H01L27/1274 , H01L27/3265 , H01L29/78675
摘要： An array substrate and a manufacturing method thereof, and a display apparatus comprising the array substrate are provided. The array substrate comprises a base substrate, and a thin film transistor and a storing capacitor provided on the base substrate, the thin film transistor comprises a gate, a source, a drain and a gate insulation layer provided between the source and drain and the gate, the storing capacitor comprises a first plate, a second plate and a dielectric layer provided between the first plate and the second plate, wherein, both of the first plate and the second plate are formed of metal material, and the dielectric layer is formed of the same material as the gate insulation layer. In the array substrate of the present invention, the charging speed of the storing capacitor can be improved and the display quality of the display apparatus comprising the array substrate is further improved.
摘要翻译：提供阵列基板及其制造方法以及包括阵列基板的显示装置。阵列基板包括基底基板和设置在基底基板上的薄膜晶体管和存储电容器，薄膜晶体管包括设置在源极和漏极与栅极之间的栅极，源极，漏极和栅极绝缘层存储电容器包括设置在第一板和第二板之间的第一板，第二板和介电层，其中，第一板和第二板都由金属材料形成，并且介电层由与栅极绝缘层相同的材料。在本发明的阵列基板中，可以提高存储电容器的充电速度，并且进一步提高包括阵列基板的显示装置的显示质量。

14. 发明授权

US10193103B2 Organic light emitting device having protrusion formed of transparent material and display apparatus 有权
公开(公告)号：US10193103B2
公开(公告)日：2019-01-29
申请号：US14770365
申请日：2014-12-13
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Xiaowei Xu , Chunping Long , Lei Shi , Wenqing Xu
IPC分类号： H01L29/08 , H01L51/52 , H01L51/50 , H01L27/32
摘要： An organic light emitting device and a display apparatus are disclosed. The organic light emitting device includes an array substrate and a package substrate (2); on a side of the package substrate (2) facing the array substrate, there is provided a protrusion (7) formed of a first transparent material, a surface of the protrusion (7) is also covered with a transparent layer (8) formed of a second transparent material, and the refractive index of the second transparent material is larger than the refractive index of the first transparent material. With the organic light emitting device, a part of light that is emitted from an organic light-emitting layer (5) and irradiated to a surface of the protrusion (7) is totally reflected and changed in optical paths to decrease incident light totally reflected at a boundary between the package substrate (2) and the outside air, and light that has been changed in optical paths is irradiated out through the package substrate (2) more easily, thereby improving the output efficiency of light.

15. 发明授权

US10062566B2 Semiconductor device, display substrate, display device, and method for manufacturing polysilicon film 有权
公开(公告)号：US10062566B2
公开(公告)日：2018-08-28
申请号：US14894908
申请日：2015-07-16
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Wenqing Xu , Chunping Long
IPC分类号： H01L27/14 , H01L29/04 , H01L27/15 , H01L29/18 , H01L21/02 , H01L29/16 , H01L29/786 , H01L27/12
CPC分类号： H01L21/02513 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/02675 , H01L27/1218 , H01L27/1222 , H01L27/1274 , H01L27/1277 , H01L29/04 , H01L29/16 , H01L29/78672
摘要： A semiconductor device, comprising a base substrate, a buffer layer and a polysilicon layer film, wherein the base substrate, the buffer layer and the polysilicon layer film being laminated sequentially, and wherein regularly arranged first grooves being provided on a surface of the buffer layer contacting the polysilicon film; the polysilicon film being formed, by applying crystallization treatment, through an optical annealing process, to an amorphous silicon film on the buffer layer having regularly arranged first grooves.

16. 发明授权

US09786500B2 Polycrystalline semiconductor layer and fabricating method thereof 有权
公开(公告)号：US09786500B2
公开(公告)日：2017-10-10
申请号：US15038350
申请日：2015-12-28
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Wenqing Xu , Hongwei Tian , Chunping Long
IPC分类号： H01L21/02 , H01L29/66 , H01L29/786 , H01L27/12 , C30B1/02 , C30B28/02 , C30B29/06
CPC分类号： H01L21/02686 , C30B1/023 , C30B28/02 , C30B29/06 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L27/1222 , H01L27/1285 , H01L29/6675 , H01L29/78603 , H01L29/78672 , H01L29/78696
摘要： The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.

17. 发明申请

US20170103890A1 POLYCRYSTALLINE SEMICONDUCTOR LAYER AND FABRICATING METHOD THEREOF 有权
公开(公告)号：US20170103890A1
公开(公告)日：2017-04-13
申请号：US15038350
申请日：2015-12-28
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Wenqing Xu , Hongwei Tian , Chunping Long
IPC分类号： H01L21/02 , H01L29/786 , C30B29/06 , C30B1/02 , C30B28/02 , H01L29/66 , H01L27/12
CPC分类号： H01L21/02686 , C30B1/023 , C30B28/02 , C30B29/06 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L27/1222 , H01L27/1285 , H01L29/6675 , H01L29/78603 , H01L29/78672 , H01L29/78696
摘要： The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.

18. 发明申请

US20170040430A1 Conductive Structure and Manufacturing Method Thereof, Array Substrate, Display Device 有权
标题翻译：导电结构及其制造方法，阵列基板，显示装置
公开(公告)号：US20170040430A1
公开(公告)日：2017-02-09
申请号：US14907778
申请日：2015-08-24
申请人： BOE Technology Group Co. Ltd.
发明人： Hongwei Tian , Kaihong Ma , Wenqing Xu , Yueping Zuo , Xiaowei Xu
IPC分类号： H01L29/423 , H01L21/28 , H01L29/49 , H01L27/12 , H01L29/417
CPC分类号： H01L29/42384 , H01L21/28008 , H01L23/50 , H01L27/124 , H01L27/3276 , H01L29/41 , H01L29/41733 , H01L29/4908 , H01L29/786
摘要： A conductive structure and a manufacturing method thereof, an array substrate and a display device. The conductive structure includes a plurality of first metal layers made of aluminum, and between every two first metal layers that are adjacent, there is also provided a second metal layer, which is made of a metal other than aluminum. With the conductive structure, the hillock phenomenon that happens to the conductive structure when it is heated can be decreased without reducing the overall thickness of the conductive structure.
摘要翻译：导电结构及其制造方法，阵列基板和显示装置。导电结构包括多个由铝制成的第一金属层，并且在邻近的每两个第一金属层之间，还提供由铝以外的金属制成的第二金属层。利用导电结构，可以降低导电结构在被加热时发生的小丘现象，而不会降低导电结构的整体厚度。

19. 发明申请

US20170294345A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20170294345A1
公开(公告)日：2017-10-12
申请号：US15512372
申请日：2016-03-03
申请人： BOE Technology Group Co., Ltd.
发明人： Xiaoyong Lu , Hongwei Tian , Yueping Zuo , Xiaowei Xu , Wenqing Xu , Chunping Long
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/02063 , H01L21/0228 , H01L21/02315 , H01L21/67 , H01L21/76814
摘要： Provided are a method and an apparatus for manufacturing a semiconductor device. The method comprises: forming a first wiring layer on a base substrate; forming an interlayer dielectric layer on the first wiring layer, with contact holes being provided in the interlayer dielectric layer; subjecting bottoms of the contact holes to a dry cleaning process; and forming a second wiring layer on the interlayer dielectric layer, wherein the second wiring layer is electrically connected to the first wiring layer via the contact holes.

20. 发明授权

US09837502B2 Conductive structure and manufacturing method thereof, array substrate, display device 有权
公开(公告)号：US09837502B2
公开(公告)日：2017-12-05
申请号：US14907778
申请日：2015-08-24
申请人： BOE Technology Group Co., Ltd.
发明人： Hongwei Tian , Kaihong Ma , Wenqing Xu , Yueping Zuo , Xiaowei Xu
IPC分类号： H01L29/423 , H01L23/50 , H01L29/41 , H01L21/28 , H01L27/12 , H01L29/417 , H01L29/49 , H01L29/786
CPC分类号： H01L29/42384 , H01L21/28008 , H01L23/50 , H01L27/124 , H01L27/3276 , H01L29/41 , H01L29/41733 , H01L29/4908 , H01L29/786
摘要： A conductive structure and a manufacturing method thereof, an array substrate and a display device. The conductive structure includes a plurality of first metal layers made of aluminum, and between every two first metal layers that are adjacent, there is also provided a second metal layer, which is made of a metal other than aluminum. With the conductive structure, the hillock phenomenon that happens to the conductive structure when it is heated can be decreased without reducing the overall thickness of the conductive structure.

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