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11. 发明授权

US07294580B2 Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition 有权
标题翻译：使用气体化学和碳氢化合物加成的周期调制的等离子体剥离方法
公开(公告)号：US07294580B2
公开(公告)日：2007-11-13
申请号：US10860833
申请日：2004-06-03
申请人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
发明人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
IPC分类号： H01L21/00
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76829
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
摘要翻译：一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。使用具有沉积气化学性质的第一气体化学物质的保护层形成阶段，其中保护层形成阶段在每个循环中以约0.005至10秒钟进行。使用第二种气体化学法，使用剥离气体化学法，其中第一种气体化学物质与第二种气体化学物质不同，进行汽提阶段以剥离光致抗蚀剂掩模，其中每个循环在约0.005至10秒内进行蚀刻阶段。

12. 发明申请

US20070240737A1 Post etch wafer surface cleaning with liquid meniscus 失效
标题翻译：用液体弯液面后蚀刻晶片表面清洁
公开(公告)号：US20070240737A1
公开(公告)日：2007-10-18
申请号：US11477299
申请日：2006-06-28
申请人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
发明人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
IPC分类号： C23G1/00 , C23G1/02 , B08B3/00
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
摘要翻译：公开了一种用于清洁半导体晶片表面的方法。将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。用晶片表面上的一些污染物去除第一个清洁溶液。接下来，将氧化剂溶液施加到晶片表面。氧化剂溶液在剩余的污染物上形成氧化层。除去氧化剂溶液，然后将第二清洗溶液施加到晶片表面。从晶片表面去除第二清洗溶液。清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。

13. 发明授权

US07597765B2 Post etch wafer surface cleaning with liquid meniscus 失效
标题翻译：用液体弯液面后蚀刻晶片表面清洁
公开(公告)号：US07597765B2
公开(公告)日：2009-10-06
申请号：US11477299
申请日：2006-06-28
申请人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
发明人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
IPC分类号： B08B3/08 , C23G1/02
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
摘要翻译：公开了一种用于清洁半导体晶片表面的方法。将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。用晶片表面上的一些污染物去除第一个清洁溶液。接下来，将氧化剂溶液施加到晶片表面。氧化剂溶液在剩余的污染物上形成氧化层。除去氧化剂溶液，然后将第二清洗溶液施加到晶片表面。从晶片表面去除第二清洗溶液。清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。

14. 发明申请

US20090229638A1 METHOD OF DIELECTRIC FILM TREATMENT 有权
标题翻译：电介质膜处理方法
公开(公告)号：US20090229638A1
公开(公告)日：2009-09-17
申请号：US12048188
申请日：2008-03-13
申请人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
发明人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译：用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。基于工艺参数识别多个应用化学物质。多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程，通过其形成特征的低k电介质材料。

15. 发明授权

US09236279B2 Method of dielectric film treatment 有权
标题翻译：介电膜处理方法
公开(公告)号：US09236279B2
公开(公告)日：2016-01-12
申请号：US12048188
申请日：2008-03-13
申请人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
发明人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
IPC分类号： B08B3/04 , H01L21/67 , H01L21/02 , H01L21/3105 , H01L21/311
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译：用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。基于工艺参数识别多个应用化学物质。多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程，通过其形成特征的低k电介质材料。

16. 发明申请

US20140048108A9 METHOD OF DIELECTRIC FILM TREATMENT 有权
标题翻译：电介质膜处理方法
公开(公告)号：US20140048108A9
公开(公告)日：2014-02-20
申请号：US12048188
申请日：2008-03-13
申请人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
发明人： Seokmin Yun , Ji Zhu , John M. deLarios , Mark Wilcoxson
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译：用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。基于工艺参数识别多个应用化学物质。多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程，通过其形成特征的低k电介质材料。

17. 发明授权

US08601639B2 Apparatus for application of two-phase contaminant removal medium 有权
标题翻译：用于应用两相污染物去除介质的设备
公开(公告)号：US08601639B2
公开(公告)日：2013-12-10
申请号：US13351114
申请日：2012-01-16
申请人： Ji Zhu , Arjun Mendiratta , David Mui
发明人： Ji Zhu , Arjun Mendiratta , David Mui
IPC分类号： B08B3/02
CPC分类号： B08B3/02 , C11D3/2079 , C11D3/222 , C11D3/37 , C11D3/3707 , C11D3/3723 , C11D3/3753 , C11D3/3765 , C11D3/3773 , C11D3/378 , C11D3/43 , C11D7/265 , C11D7/268 , C11D7/5004 , C11D11/0047 , C11D17/0013 , C11D17/003 , Y10S134/902
摘要： An apparatus is provided that includes a substrate support assembly for holding the semiconductor substrate and a dispense head for applying a cleaning material to clean the contaminants from the substrate surface. The dispense head extends across a length of the semiconductor substrate and is positioned proximate to the substrate surface at a distance of between about 0.1 mm and about 4.5 mm. The proximate position enables application of a force to the cleaning material as it is applied to the substrate surface as a film, and the cleaning material provided through the dispense head contains a cleaning liquid, a plurality of solid components, and polymers of a polymeric compound, each of the plurality of solid components and polymers being greater than zero and less than 3% of the cleaning material, the plurality of solid components and the polymers are dispersed for application through the dispense head.
摘要翻译：提供了一种装置，其包括用于保持半导体基板的基板支撑组件和用于施加清洁材料以从基板表面清洁污染物的分配头。分配头延伸穿过半导体衬底的长度，并且以约0.1mm至约4.5mm的距离定位在衬底表面附近。靠近的位置使得当作为薄膜施加到基材表面时能够对清洁材料施加力，并且通过分配头提供的清洁材料含有清洁液体，多种固体组分和聚合物的聚合物多个固体组分和聚合物中的每一个都大于零且小于清洁材料的3％，多个固体组分和聚合物通过分散头分散以供施用。

18. 发明授权

US08567421B2 Method and system for uniformly applying a multi-phase cleaning solution to a substrate 失效
标题翻译：将多相清洗液均匀地涂布在基材上的方法和系统
公开(公告)号：US08567421B2
公开(公告)日：2013-10-29
申请号：US13028091
申请日：2011-02-15
申请人： Jeffrey J. Farber , Ji Zhu , Carl Woods , John M. de Larios
发明人： Jeffrey J. Farber , Ji Zhu , Carl Woods , John M. de Larios
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , G03F7/423 , H01L21/67057 , Y10S134/902
摘要： An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point.
摘要翻译：公开了一种用于向用于清洁表面污染物的基底处理清洁溶液提供力的装置。该装置包括一个施力器和一个门。力施加器构造成被调节到离开衬底表面的第一高度。门被定位成与施力器的拖尾点相邻，并且被配置成被调节到离开衬底表面的第二高度，以便当溶液移动到拖尾点时使清洁溶液平坦化。

19. 发明授权

US08486287B2 Methods for fabrication of positional and compositionally controlled nanostructures on substrate 有权
标题翻译：在衬底上制造位置和组成受控的纳米结构的方法
公开(公告)号：US08486287B2
公开(公告)日：2013-07-16
申请号：US10599106
申请日：2004-10-14
申请人： Ji Zhu , Jeff Grunes , Yang-Kyu Choi , Jeffrey Bokor , Gabor Somorjai
发明人： Ji Zhu , Jeff Grunes , Yang-Kyu Choi , Jeffrey Bokor , Gabor Somorjai
IPC分类号： H01L21/285 , H01L21/302 , H01L27/00
CPC分类号： H01L21/3086 , B81C1/00111 , B82Y10/00 , G03F7/40 , H01L21/3088 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/66795 , H01L29/785
摘要： Fabrication methods disclosed herein provide for a nanoscale structure or a pattern comprising a plurality of nanostructures of specific predetermined position, shape and composition, including nanostructure arrays having large area at high throughput necessary for industrial production. The resultant nanostracture patterns are useful for nanostructure arrays, specifically sensor and catalytic arrays.
摘要翻译：本文公开的制造方法提供纳米尺度结构或包含特定预定位置，形状和组成的多个纳米结构的图案，包括工业生产所需的高通量的具有大面积的纳米结构阵列。所得的纳米结构图案可用于纳米结构阵列，特别是传感器和催化剂阵列。

20. 发明授权

US08227394B2 Composition of a cleaning material for particle removal 有权
标题翻译：用于除尘的清洁材料的组成
公开(公告)号：US08227394B2
公开(公告)日：2012-07-24
申请号：US12267345
申请日：2008-11-07
申请人： Ji Zhu , Arjun Mendiratta , David Mui
发明人： Ji Zhu , Arjun Mendiratta , David Mui
IPC分类号： C11D3/26 , C11D3/37 , C11D3/43
CPC分类号： C11D7/5004 , C11D3/222 , C11D3/3765 , C11D3/3773 , C11D3/3776
摘要： The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. To assist removing of particles from the wafer (or substrate) surfaces, the polymeric compound of the polymers can contain a polar functional group, which can establish polar-polar molecular interaction and hydrogen bonds with hydrolyzed particles on the wafer surface. The polymers of a polymeric compound(s) with a large molecular weight form long polymer chains and network. The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. The polymeric compound(s) of the polymers may also include a functional group that carries charge in the cleaning solution. The charge of the functional group of the polymers improves the particle removal efficiency.
摘要翻译：本发明的实施例提供用于清洁具有精细特征的图案化衬底的改进材料。清洁材料在清洁具有精细特征的图案化基材上具有优点，而基本上不损坏特征。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。为了帮助从晶片（或衬底）表面去除颗粒，聚合物的聚合物可以含有极性官能团，其可以与晶片表面上的水解颗粒建立极性极性的分子相互作用和氢键。具有大分子量的高分子化合物的聚合物形成长的聚合物链和网络。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。聚合物的聚合物还可以包括在清洁溶液中携带电荷的官能团。聚合物官能团的电荷提高了颗粒去除效率。

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