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11. 发明申请

US20140199852A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20140199852A1
公开(公告)日：2014-07-17
申请号：US14240615
申请日：2012-08-16
申请人： Masahiro Kimura , Tomonori Umezaki , Akiou Kikuchi
发明人： Masahiro Kimura , Tomonori Umezaki , Akiou Kikuchi
IPC分类号： H01L21/3213 , H01L27/115
CPC分类号： H01L21/32135 , H01L21/30604 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/6719 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas.
摘要翻译：提供了图案形成方法，用于形成包括绝缘膜和导电膜的多层膜的图案，所述多层膜层叠在一起并且在基板上形成有孔，其中导电膜从孔的内周表面选择性地精确地凹入。图案形成方法包括以下步骤：在衬底上交替堆叠至少两个绝缘膜和至少两个多晶硅膜，以形成包括至少两个绝缘膜和至少两个多晶硅膜的多层膜; 在所述多层膜中形成延伸穿过所述至少两个绝缘膜和所述至少两个多晶硅膜的孔; 并通过各向同性蚀刻从孔的侧壁选择性地蚀刻多晶硅膜，通过向惰性气体中稀释含氟卤素气体而制备的蚀刻气体。

12. 发明申请

US20110150747A1 Method for Manufacturing Oxygen-Containing Halogenated Fluoride 审中-公开
标题翻译：制造含氧卤代氟化物的方法
公开(公告)号：US20110150747A1
公开(公告)日：2011-06-23
申请号：US12991382
申请日：2009-04-28
申请人： Akiou Kikuchi , Isamu Mori
发明人： Akiou Kikuchi , Isamu Mori
IPC分类号： C01B7/24
CPC分类号： C01B11/24 , C01B7/24
摘要： According to the present invention, there is provided a method for manufacturing an oxygen-containing halogenated fluoride of the general formula: XO2F, comprising: reacting a halogen fluoride of the general formula: XF with a H2O source, where X represents a halogen element selected from Cl, Br and I in the general formulas.
摘要翻译：根据本发明，提供了一种制备通式XO 2 F的含氧卤代氟化物的方法，其包括：使通式XF的卤素氟化物与H 2 O源反应，其中X代表所选的卤素元素来自Cl，Br和I在通式中。

13. 发明申请

US20100247412A1 Method for Removal of CIO3F 审中-公开
标题翻译：去除CIO3F的方法
公开(公告)号：US20100247412A1
公开(公告)日：2010-09-30
申请号：US12745831
申请日：2008-10-24
申请人： Akiou Kikuchi , Isamu Mori
发明人： Akiou Kikuchi , Isamu Mori
IPC分类号： B01D53/68
CPC分类号： B01D53/68 , B01D53/77 , B01D2251/304 , B01D2251/306 , B01D2251/60 , B01D2257/204 , B01D2258/0216 , C01B7/0706 , C01B7/195
摘要： [Object] An object of the present invention is to provide an inexpensive method for removing ClO3F contained in a gas.[Solving Means] It is made possible to inexpensively remove C1O3F as an impurity in a gas by reacting the gas containing C1O3F as the impurity with a reducing agent. Additionally, it is made possible to inexpensively remove C1O3F as an impurity in a gas by using the reducing agent having a standard electrode potential of not higher than −0.092V in an aqueous solution, or by using the reducing agent in the form of an aqueous solution, for a reaction.
摘要翻译：本发明的目的是提供一种用于去除气体中所含的ClO 3 F的廉价方法。 [解决方案]通过使含有作为杂质的C 10 F 3 F的气体与还原剂反应，可以廉价地将气体中的作为杂质的C 10 F 3除去。另外，通过在水溶液中使用具有不高于-0.092V的标准电极电位的还原剂，或通过使用水性形式的还原剂，可以廉价地将气体中的杂质除去作为杂质的C 10 F 3 F 溶液，用于反应。

14. 发明授权

US09238872B2 Method for synthesizing fluorine compound by electrolysis and electrode therefor 有权
标题翻译：通过电解合成氟化合物的方法及其电极
公开(公告)号：US09238872B2
公开(公告)日：2016-01-19
申请号：US13985242
申请日：2012-01-27
申请人： Isamu Mori , Akifumi Yao , Akiou Kikuchi , Masaaki Yonekura , Hiroshi Horiuchi
发明人： Isamu Mori , Akifumi Yao , Akiou Kikuchi , Masaaki Yonekura , Hiroshi Horiuchi
IPC分类号： C25B11/04 , C25D3/66 , C25D9/06 , C25B11/12 , C25B1/24
CPC分类号： C25B11/0478 , C25B1/245 , C25B11/12 , C25D3/66 , C25D9/06
摘要： Disclosed is an electrode for electrolytic synthesis of a fluorine compound, including: an electrode substrate having at least a surface thereof formed of a conductive carbon material; a conducting diamond layer formed on a part of the surface of the electrode substrate; and a metal fluoride-containing coating layer formed on an exposed part of the electrode substrate that is uncovered by the conducting diamond layer. It is possible for the electrolytic synthesis electrode to limit the growth of a graphite fluoride layer on the electrode surface, prevent decrease in effective electrolysis area and allow stable electrolysis in an electrolytic bath of a hydrogen fluoride-containing molten salt.
摘要翻译：公开了一种用于电解合成氟化合物的电极，包括：至少具有由导电碳材料形成的表面的电极基底; 形成在电极基板表面的一部分上的导电金刚石层; 以及形成在未被导电金刚石层覆盖的电极基板的暴露部分上的含金属氟化物的涂层。电解合成电极可以限制电极表面上的石墨氟化物层的生长，防止有效电解区域的降低，并允许在含氟化氢的熔融盐的电解浴中稳定的电解。

15. 发明授权

US09082725B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US09082725B2
公开(公告)日：2015-07-14
申请号：US14240615
申请日：2012-08-16
申请人： Masahiro Kimura , Tomonori Umezaki , Akiou Kikuchi
发明人： Masahiro Kimura , Tomonori Umezaki , Akiou Kikuchi
IPC分类号： H01L21/311 , H01L21/302 , H01L21/461 , H01L21/3213 , H01L29/66 , H01L29/792 , H01L27/115 , H01L21/67 , H01L21/306
CPC分类号： H01L21/32135 , H01L21/30604 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/6719 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas.
摘要翻译：提供了图案形成方法，用于形成包括绝缘膜和导电膜的多层膜的图案，所述多层膜层叠在一起并且在基板上形成有孔，其中导电膜从孔的内周表面选择性地精确地凹入。图案形成方法包括以下步骤：在衬底上交替堆叠至少两个绝缘膜和至少两个多晶硅膜，以形成包括至少两个绝缘膜和至少两个多晶硅膜的多层膜; 在所述多层膜中形成延伸穿过所述至少两个绝缘膜和所述至少两个多晶硅膜的孔; 并通过各向同性蚀刻从孔的侧壁选择性地蚀刻多晶硅膜，通过向惰性气体中稀释含氟卤素气体而制备的蚀刻气体。

16. 发明授权

US09017571B2 Dry etching agent and dry etching method 有权
标题翻译：干蚀刻剂和干蚀刻法
公开(公告)号：US09017571B2
公开(公告)日：2015-04-28
申请号：US13808506
申请日：2011-06-24
申请人： Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto , Akiou Kikuchi
发明人： Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto , Akiou Kikuchi
IPC分类号： C09K13/00 , C09K13/04 , C09K13/08 , C09K13/06 , H01L21/311
CPC分类号： C09K13/00 , C09K13/08 , H01L21/31116
摘要： A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.
摘要翻译：根据本发明的干蚀刻剂优选含有：（A）1,3,3,3-四氟丙烯; （B）选自H2，O2，O3，CO，CO2，COCl2，COF2，CF3OF，NO2，F2，NF3，Cl2，Br2，I2，CH4，C2H2，C2H4等的至少一种添加剂气体， C2H6，C3H4，C3H6，C3H8，HF，HI，HBr，HCl，NO，NH3和YFn（其中Y表示Cl，Br或I; n表示满足1＆nlE的整数; n＆nlE; 7）; 和（C）惰性气体。这种干蚀刻剂对全球环境的影响较小，即使没有特殊的基板激励操作，也可以显着改善工艺窗口和地址处理要求，如低边蚀刻率和高纵横比。

17. 发明申请

US20140302683A1 DRY ETCHING AGENT 审中-公开
标题翻译：干蚀剂
公开(公告)号：US20140302683A1
公开(公告)日：2014-10-09
申请号：US14232054
申请日：2012-06-13
申请人： Akiou Kikuchi , Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto
发明人： Akiou Kikuchi , Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto
IPC分类号： H01L21/3065 , C09K13/08 , C09K13/00
CPC分类号： H01L21/3065 , C09K13/00 , C09K13/08 , H01L21/31116 , H01L21/32137
摘要： The invention is directed to providing a dry etching agent having little effect on the global environment but having the required performance. Provided is a dry etching agent containing, each at a specific vol %: (A) a fluorine-containing unsaturated hydrocarbon represented by the formula CaFbHc (in the formula, a, b and c are each positive integers and satisfy the correlations of 2≦a≦5, c b+c and b≦a+c, excluding the case where a=3, b=4 or c=2); (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2, COF2, F2, NF3, Cl2, Br2, I2, and YFn (where Y is Cl, Br or I and n is an integer of 1 to 5); and (C) at least one kind of gas selected from the group consisting of N2, He, Ar, Ne, Xe, and Kr.
摘要翻译：本发明涉及提供对全球环境几乎没有影响但具有所需性能的干蚀刻剂。本发明提供一种干蚀刻剂，其特征在于：体积％：（A）由式CaFbHc表示的含氟不饱和烃（式中，a，b和c分别为正整数，满足2＆nlE的相关性; a + n，b = 4或c = 2的情况除外）; a，c，b，c，b + c，b + （B）选自O 2，O 3，CO，CO 2，COCl 2，COF 2，F 2，NF 3，Cl 2，Br 2，I 2和Y F n中的至少一种气体（其中Y为Cl，Br或I和n 是1〜5的整数）; 和（C）选自由N 2，He，Ar，Ne，Xe和Kr组成的组中的至少一种气体。

18. 发明申请

US20130105728A1 Dry Etching Agent and Dry Etching Method 有权
标题翻译：干法蚀刻剂和干蚀刻法
公开(公告)号：US20130105728A1
公开(公告)日：2013-05-02
申请号：US13808506
申请日：2011-06-24
申请人： Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto , Akiou Kikuchi
发明人： Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto , Akiou Kikuchi
IPC分类号： C09K13/00
CPC分类号： C09K13/00 , C09K13/08 , H01L21/31116
摘要： A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.
摘要翻译：根据本发明的干蚀刻剂优选含有：（A）1,3,3,3-四氟丙烯; （B）选自H2，O2，O3，CO，CO2，COCl2，COF2，CF3OF，NO2，F2，NF3，Cl2，Br2，I2，CH4，C2H2，C2H4等的至少一种添加剂气体， C2H6，C3H4，C3H6，C3H8，HF，HI，HBr，HCl，NO，NH3和YFn（其中Y表示Cl，Br或I; n表示满足1 @ n @ 7的整数）; 和（C）惰性气体。这种干蚀刻剂对全球环境的影响较小，即使没有特殊的基板激励操作，也可以显着改善工艺窗口和地址处理要求，如低边蚀刻率和高纵横比。

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