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11. 发明申请

WO2011090626A3 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 审中-公开
标题翻译：使用灵活的氮气/氢气比率生产的放射线电介质膜生长
公开(公告)号：WO2011090626A3
公开(公告)日：2011-10-27
申请号：PCT/US2010060852
申请日：2010-12-16
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , MILLER MATTHEW L , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , CHEN XIAOLIN , MILLER MATTHEW L , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/31 , H01L21/205 , H01L21/324
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过将氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调节氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

12. 发明申请

WO2011084812A2 FLOWABLE DIELECTRIC USING OXIDE LINER 审中-公开
标题翻译：使用氧化物衬垫的可流动介质
公开(公告)号：WO2011084812A2
公开(公告)日：2011-07-14
申请号：PCT/US2010061605
申请日：2010-12-21
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , INGLE NITIN K
发明人： LIANG JINGMEI , INGLE NITIN K
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/56 , H01J37/32357 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： Methods of forming silicon oxide layers are described. The methods include mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing a hydrogen-and-nitrogen-containing precursor into the plasma. Prior to depositing the silicon-and-nitrogen-containing layer, a silicon oxide liner layer is formed to improve adhesion, smoothness and flowability of the silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. Methods also include forming a silicon oxide liner layer before applying a spin-on silicon-containing material.
摘要翻译：描述了形成氧化硅层的方法。该方法包括将不含碳的含硅前体与自由基氮前体混合，以及在衬底上沉积含硅和氮的层。通过使含氢和氮的前体流入等离子体，在等离子体中形成自由基氮前体。在沉积含硅和氮的层之前，形成氧化硅衬里层以改善含硅和氮的层的粘附性，光滑性和流动性。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。方法还包括在施加旋涂含硅材料之前形成氧化硅衬里层。

13. 发明申请

WO2012122392A3 POST-PLANARIZATION DENSIFICATION 审中-公开
标题翻译：后平面化密度
公开(公告)号：WO2012122392A3
公开(公告)日：2012-12-20
申请号：PCT/US2012028310
申请日：2012-03-08
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/31 , H01L21/304
CPC分类号： H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31055 , H01L21/316 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
摘要翻译：描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。该工艺增加了填隙氧化硅的密度，特别是在狭窄的沟槽中。在宽的沟槽和凹陷的开放区域中密度也可能增加。在允许蚀刻速率更接近地匹配的处理之后，狭窄和宽的沟槽/开放区域中的填隙氧化硅的密度变得更相似。这种影响也可以被描述为模式负载效应的减少。该工艺涉及形成平坦化的氧化硅。平面化暴露了一个新的电介质界面放置在狭窄的沟槽附近。新暴露的界面通过退火和/或将平面化的表面暴露于等离子体而促进致密化处理。

14. 发明申请

WO2012115750A3 REMOTELY-EXCITED FLUORINE AND WATER VAPOR ETCH 审中-公开
标题翻译：远距离激发氟和水蒸气
公开(公告)号：WO2012115750A3
公开(公告)日：2012-11-15
申请号：PCT/US2012023356
申请日：2012-01-31
申请人： APPLIED MATERIALS INC , ZHANG JINGCHUN , WANG ANCHUAN , INGLE NITIN K
发明人： ZHANG JINGCHUN , WANG ANCHUAN , INGLE NITIN K
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01L28/91
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，在该区域等离子体流出物与水蒸汽结合。由组合产生的化学反应产生反应物，该反应物蚀刻图案化的异质结构以在实施例中产生显示出很小变形的薄的残余结构。这些方法可以用于保形修整氧化硅，同时除去很少或不含硅，多晶硅，氮化硅，钛或氮化钛。在示例性实施例中，已经发现本文描述的蚀刻工艺去除薄圆柱形导电结构周围的模铸氧化物，而不会使圆柱结构显着变形。

15. 发明申请

WO2011149638A3 SELECTIVE ETCH FOR SILICON FILMS 审中-公开
标题翻译：硅片的选择性蚀刻
公开(公告)号：WO2011149638A3
公开(公告)日：2012-03-15
申请号：PCT/US2011035598
申请日：2011-05-06
申请人： APPLIED MATERIALS INC , ZHANG JINGCHUN , WANG ANCHUAN , INGLE NITIN K
发明人： ZHANG JINGCHUN , WANG ANCHUAN , INGLE NITIN K
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/311 , H01L21/31116 , H01L21/32136
摘要： A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.
摘要翻译：描述了蚀刻图案化异质含硅结构的方法，并且包括与现有远程等离子体蚀刻相比具有反向选择性的远程等离子体蚀刻。这些方法可用于在少量或不含氧化硅的同时去除多晶硅。更一般地，含有较少氧的含硅膜比含有更多氧的含硅膜更快地除去。其它示例性应用包括修整硅碳氮化物膜，同时基本上保留碳氧化硅。这些应用程序可以通过本文介绍的方法实现，从而实现新的流程。预期这些工艺流程对于各种更细的线宽结构是理想的。本文包含的方法也可以用于比含有较高氮浓度的含氮和硅的膜更快地蚀刻含硅膜。

16. 发明申请

WO2011109148A3 CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 审中-公开
标题翻译：通过放射性元素CVD的合适层
公开(公告)号：WO2011109148A3
公开(公告)日：2012-02-23
申请号：PCT/US2011024378
申请日：2011-02-10
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , LI DONGQING , INGLE NITIN K
发明人： LIANG JINGMEI , CHEN XIAOLIN , LI DONGQING , INGLE NITIN K
IPC分类号： H01L21/318
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., silicon-nitrogen-hydrogen (Si-N-H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. Carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with radical-nitrogen precursor. Because silicon-and-nitrogen film is formed without carbon, conversion of film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows optical properties of conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer is found to improve wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅和氮前体和自由基 - 氮前体。无碳硅氮前驱主要通过与自由基 - 氮前体接触激发。由于无碳膜而形成硅 - 氮膜，因此，薄膜转化成硬化氧化硅可以减少孔形成和体积收缩。沉积的含硅和氮的膜可以全部或部分地转化为允许保形介电层的光学特性可选择的氧化硅。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。发现低温内衬层可改善润湿性能，并允许可流动膜更完全地填充沟槽。

17. 发明申请

WO2011049800A3 STRESS MANAGEMENT FOR TENSILE FILMS 审中-公开
标题翻译：拉伸片的应力管理
公开(公告)号：WO2011049800A3
公开(公告)日：2011-07-14
申请号：PCT/US2010052548
申请日：2010-10-13
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , PATEL ANJANA M , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , PATEL ANJANA M , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/3185 , H01L21/76829 , H01L21/76834 , H01L21/76837
摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
摘要翻译：描述了具有降低的开裂倾向的间隙填充氧化硅层的形成。沉积涉及形成有助于填充沟槽的可流动的含硅层。在基板温度高的情况下，与根据现有技术中的方法形成的可流动膜相比，在电介质膜中的裂纹较少。描述在形成间隙填充氧化硅层之前沉积的压缩衬垫层，并且降低随后沉积的膜破裂的倾向。在可流动的含硅层之后沉积的压缩覆盖层也被确定以减少开裂。压缩衬里层和压缩覆盖层可以单独使用或组合使用以减少并经常消除开裂。已经确定了所公开的实施例中的压缩覆盖层，以使氮化硅的下层能够转变成氧化硅层。

18. 发明申请

WO2010011476A4 DEPOSITION METHODS AND RELEASING STRESS BUILDUP 审中-公开
标题翻译：沉积方法和释放应力的构建
公开(公告)号：WO2010011476A4
公开(公告)日：2010-06-24
申请号：PCT/US2009049300
申请日：2009-06-30
申请人： APPLIED MATERIALS INC , TANG JING , INGLE NITIN K , YUAN ZHENG , MININNI ROSSELLA
发明人： TANG JING , INGLE NITIN K , YUAN ZHENG , MININNI ROSSELLA
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/76224
摘要： A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature.
摘要翻译：提供了一种用电介质材料在半导体衬底上释放特征应力累积的沉积方法。该功能包括由间隙分隔的行。该方法包括在腔室中的半导体衬底上的特征结构上形成衬垫层。释放特征上的内衬层的应力以基本上减少特征的线的弯曲。电介质膜沉积在应力释放衬垫层上以基本上填充特征的间隙。

19. 发明申请

WO2013052712A3 SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION 审中-公开
标题翻译：用可变氢终止方式选择性蚀刻硅
公开(公告)号：WO2013052712A3
公开(公告)日：2013-06-20
申请号：PCT/US2012058818
申请日：2012-10-04
申请人： APPLIED MATERIALS INC , WANG ANCHUAN , ZHANG JINGCHUN , INGLE NITIN K , LEE YOUNG S
发明人： WANG ANCHUAN , ZHANG JINGCHUN , INGLE NITIN K , LEE YOUNG S
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/3081 , H01L21/32137
摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，在衬底处理区域中，等离子体流出物与硅的暴露区域反应。等离子体流出物与图案化的异质结构反应以选择性地去除硅，同时非常缓慢地去除其他暴露的材料。硅选择性的结果部分来自远程等离子体中含氢前体的优势，其中氢终止于图案化的异质结构上的表面。含氟前体的流量低得多，以逐渐将氟取代为氢封端的硅上的氢，从而从硅的暴露区域选择性地除去硅。这些方法可用于选择性地去除硅，其速度比氧化硅，氮化硅和各种含金属材料快得多。

20. 发明申请

WO2013033527A3 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN 审中-公开
标题翻译：选择性抑制含有硅和氮的材料的干燥速率
公开(公告)号：WO2013033527A3
公开(公告)日：2013-04-25
申请号：PCT/US2012053329
申请日：2012-08-31
申请人： APPLIED MATERIALS INC , WANG YUNYU , WANG ANCHUAN , ZHANG JINGCHUN , INGLE NITIN K , LEE YOUNG S
发明人： WANG YUNYU , WANG ANCHUAN , ZHANG JINGCHUN , INGLE NITIN K , LEE YOUNG S
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地除去缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

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