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11. 发明授权

US08951429B1 Tungsten oxide processing 有权
标题翻译：氧化钨加工
公开(公告)号：US08951429B1
公开(公告)日：2015-02-10
申请号：US14136200
申请日：2013-12-20
申请人： Applied Materials, Inc.
发明人： Jie Liu , Xikun Wang , Seung Park , Mikhail Korolik , Anchuan Wang , Nitin K. Ingle
IPC分类号： B44C1/22 , C23F1/00 , C23F3/00 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32357 , H01L21/31122
摘要： Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH3). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. Increasing a flow of ammonia during the process removes a typical skin of tungsten oxide having higher oxidation coordination number first and then selectively etching lower oxidation tungsten oxide. In some embodiments, the tungsten oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.
摘要翻译：描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。这些方法包括使用由含氟前体与氨（NH 3）组合形成的等离子体流出物的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。在该过程中增加氨的流动首先除去具有较高氧化配位数的氧化钨的典型表面，然后选择性地蚀刻较低的氧化氧化钨。在一些实施例中，氧化钨蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。

12. 发明授权

US11024537B2 Methods and apparatus for hybrid feature metallization 有权
公开(公告)号：US11024537B2
公开(公告)日：2021-06-01
申请号：US16598878
申请日：2019-10-10
申请人： APPLIED MATERIALS, INC.
发明人： Roey Shaviv , Ismail Emesh , Xikun Wang
IPC分类号： H01L21/768 , H01L21/02 , H01L21/3213 , H01L23/532
摘要： Methods and apparatus for forming an interconnect, including: depositing a first barrier layer upon a top surface of a via and a top surface of a trench; filling the via with a first metal, wherein the first metal completely fills the via and forms a metal layer within the trench; etching the metal layer within the trench to expose dielectric sidewalls of the trench, a top surface of the via, and a dielectric bottom of the trench; depositing a second barrier layer upon the dielectric sidewalls, top surface of the via, and the dielectric bottom of the trench; and filling the trench with a second metal different than the first metal.

13. 发明授权

US10465294B2 Oxide and metal removal 有权
公开(公告)号：US10465294B2
公开(公告)日：2019-11-05
申请号：US15095342
申请日：2016-04-11
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Jie Liu , Anchuan Wang , Nitin K. Ingle , Jeffrey W. Anthis , Benjamin Schmiege
IPC分类号： H01L21/3213 , C23F1/02 , C23F1/12 , H01J37/32
摘要： Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

14. 发明授权

US09659791B2 Metal removal with reduced surface roughness 有权
公开(公告)号：US09659791B2
公开(公告)日：2017-05-23
申请号：US14801542
申请日：2015-07-16
申请人： Applied Materials, Inc.
发明人： Xikun Wang , David Cui , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , H01L21/3213 , H01L21/768 , H01L21/02 , H01L21/311 , H01L21/3065
CPC分类号： H01L21/32138 , H01J37/32449 , H01L21/02071 , H01L21/3065 , H01L21/31122 , H01L21/32135 , H01L21/32136 , H01L21/7684
摘要： Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.

15. 发明授权

US09553102B2 Tungsten separation 有权
标题翻译：钨分离
公开(公告)号：US09553102B2
公开(公告)日：2017-01-24
申请号：US14463561
申请日：2014-08-19
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Jie Liu , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L27/115 , C23F4/00 , H01L21/28 , H01J37/32
CPC分类号： H01L27/11582 , C23F4/00 , H01J37/32357 , H01L21/28 , H01L21/32136 , H01L21/67225 , H01L27/11568
摘要： Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.
摘要翻译：描述了从图案化衬底的表面选择性地蚀刻钨的方法。根据需要，蚀刻将垂直布置的钨板彼此电分离，例如在垂直闪存器件的制造中。钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。所述方法包括将电短路钨板暴露于在电容激发室等离子体区域中形成的远激发氟。所述方法包括将钨板暴露于在感应激发的远程等离子体系统中形成的远程激发的氟。在每个操作期间在基板处理区域中维持低电子温度以实现高蚀刻选择性。

16. 发明授权

US09520303B2 Aluminum selective etch 有权
标题翻译：铝选择性蚀刻
公开(公告)号：US09520303B2
公开(公告)日：2016-12-13
申请号：US14460115
申请日：2014-08-14
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Anchuan Wang , Nitin K. Ingle
IPC分类号： C03C15/00 , H01L21/311 , H01L21/3065 , H01L21/02 , C23F1/02 , C23F1/12 , H01J37/32 , C23F4/00 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/3065 , C23F1/02 , C23F1/12 , C23F4/00 , H01J37/3244 , H01J2237/334 , H01J2237/3341 , H01L21/02071 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/32136 , H01L21/76814
摘要： Methods of selectively etching aluminum and aluminum layers from the surface of a substrate are described. The etch selectively removes aluminum materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon carbon nitride, silicon oxycarbide and/or silicon nitride. The methods include exposing aluminum materials (e.g. aluminum) to remotely-excited chlorine (Cl2) in a substrate processing region. A remote plasma is used to excite the chlorine and a low electron temperature is maintained in the substrate processing region to achieve high etch selectivity. Aluminum oxidation may be broken through using a chlorine-containing precursor or a bromine-containing precursor excited in a plasma or using no plasma-excitation, respectively.
摘要翻译：描述了从基板的表面选择性地蚀刻铝和铝层的方法。相对于含硅膜，例如硅，多晶硅，氧化硅，氮化硅，碳氧化硅和/或氮化硅，蚀刻选择性地除去铝材料。这些方法包括将铝材料（例如铝）暴露于基板处理区域中的远程激发的氯（Cl2）。使用远程等离子体来激发氯，并且在基板处理区域中保持低电子温度以实现高蚀刻选择性。可以通过使用在等离子体中激发的或不使用等离子体激发的含氯前体或含溴前驱体来破坏铝的氧化。

17. 发明申请

US20160086816A1 CHLORINE-BASED HARDMASK REMOVAL 有权
标题翻译：基于氯化物的硬质合金去除
公开(公告)号：US20160086816A1
公开(公告)日：2016-03-24
申请号：US14543683
申请日：2014-11-17
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Mandar Pandit , Zhenjiang Cui , Mikhail Korolik , Anchuan Wang , Nitin K. Ingle , Jie Liu
IPC分类号： H01L21/311
CPC分类号： H01L21/31122 , H01J37/32357 , H01L21/02063 , H01L21/311 , H01L21/31111 , H01L21/31144 , H01L21/32136 , H01L21/32139
摘要： A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.
摘要翻译：描述了一种去除氮化钛硬掩模的方法。在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。使用在含氯前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

18. 发明授权

US09287134B2 Titanium oxide etch 有权
标题翻译：氧化钛蚀刻
公开(公告)号：US09287134B2
公开(公告)日：2016-03-15
申请号：US14157724
申请日：2014-01-17
申请人： APPLIED MATERIALS, INC.
发明人： Xikun Wang , Lin Xu , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/311 , H01L21/033 , H01J37/32
CPC分类号： H01L21/31122 , H01J37/32357 , H01L21/0337
摘要： Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium oxide. The plasmas effluents react with exposed surfaces and selectively remove titanium oxide while very slowly removing other exposed materials. A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some embodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.
摘要翻译：描述了相对于氧化硅，氮化硅和/或其它电介质来选择性地蚀刻氧化钛的方法。所述方法包括使用由含氟前体和/或含氯前体形成的等离子体流出物的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钛反应。等离子体流出物与暴露的表面反应并选择性地去除氧化钛，同时非常缓慢地除去其它暴露的材料。在远程等离子体蚀刻之前执行方向溅射预处理，并且能够提高选择性以及方向选择性。在一些实施方案中，钛氧化物蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。

19. 发明申请

US20160056167A1 TUNGSTEN SEPARATION 有权
标题翻译： TUNGSTEN分离
公开(公告)号：US20160056167A1
公开(公告)日：2016-02-25
申请号：US14463561
申请日：2014-08-19
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Jie Liu , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L27/115 , C23F4/00
CPC分类号： H01L27/11582 , C23F4/00 , H01J37/32357 , H01L21/28 , H01L21/32136 , H01L21/67225 , H01L27/11568
摘要： Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.
摘要翻译：描述了从图案化衬底的表面选择性地蚀刻钨的方法。根据需要，蚀刻将垂直布置的钨板彼此电分离，例如在垂直闪存器件的制造中。钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。所述方法包括将电短路钨板暴露于在电容激发室等离子体区域中形成的远激发氟。所述方法包括将钨板暴露于在感应激发的远程等离子体系统中形成的远程激发的氟。在每个操作期间在基板处理区域中维持低电子温度以实现高蚀刻选择性。

20. 发明申请

US20150357205A1 SELECTIVE TITANIUM NITRIDE REMOVAL 审中-公开
标题翻译：选择性硝酸铁去除
公开(公告)号：US20150357205A1
公开(公告)日：2015-12-10
申请号：US14720183
申请日：2015-05-22
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Anchuan Wang , Nitin K. Ingle , Dmitry Lubomirsky
IPC分类号： H01L21/3213 , H01L21/02
CPC分类号： H01L21/32136 , H01J37/32357 , H01J37/3244 , H01L21/02068 , H01L21/28 , H01L21/3065 , H01L21/32135 , H01L21/4814
摘要： Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.
摘要翻译：本文描述了相对于电介质膜选择性地蚀刻氮化钛的方法，其可以包括例如不含钛和/或含硅膜的替代金属和金属氧化物（例如氧化硅，氮化碳和低K电介质膜）。这些方法包括由含氯前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。等离子体流出物与暴露的表面反应并选择性地去除氮化钛，同时非常缓慢地除去其它暴露的材料。衬底处理区域还可以包含等离子体以便于破坏存在于氮化钛上的任何氧化钛层。衬底处理区域中的等离子体可以相对于衬底轻轻地偏置，以提高氧化钛层的去除速率。

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