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11. 发明公开

KR1020110088860A 멀티 스텝형 티 게이트 제조방법 有权
标题翻译：用于具有多个步骤及其同步的T门的制造方法
公开(公告)号：KR1020110088860A
公开(公告)日：2011-08-04
申请号：KR1020100008569
申请日：2010-01-29
申请人： 서울대학교산학협력단
发明人： 서광석 , 김종욱
IPC分类号： H01L21/336
摘要： PURPOSE: A multi step type t-gate manufacturing method is provided to completely fill electrode materials in a wider gate foot pattern by additional etching in a photosensitive layer, thereby improving the yield of a device. CONSTITUTION: Sacrificial layers(320,330) are formed on a substrate in which a source and drain are formed. A plurality of photosensitive layers is formed on the upper part of the sacrificial layers. A gate head pattern and a first gate foot pattern are formed on a plurality of photosensitive layers and the sacrificial layer is exposed. A second gate foot pattern in which an inclined surface is formed by etching the sacrificial layer is formed. An entrance of a first gate foot pattern is expanded. An electrode material is evaporated on the front surface of the substrate. A plurality of photosensitive layers is eliminated.
摘要翻译：目的：提供一种多级式t栅极制造方法，通过在感光层中进行附加蚀刻来完全填充更宽栅极脚图案中的电极材料，从而提高器件的产量。构成：牺牲层（320,330）形成在其中形成源极和漏极的衬底上。在牺牲层的上部形成多个感光层。在多个感光层上形成栅极头图形和第一栅极脚图案，并且牺牲层被暴露。形成通过蚀刻牺牲层形成倾斜表面的第二栅极脚图案。扩大了第一个门脚图案的入口。在基板的前表面上蒸发电极材料。消除了多个感光层。

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