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11. 发明授权

KR101124504B1 ＡＬＤ 공정에 의한 비정질 ＮｉＯ 박막의 제조방법 및상기 비정질 ＮｉＯ 박막을 이용한 비휘발성 메모리 소자 有权
标题翻译：通过ALD工艺制造非晶NiO薄膜的方法和使用非晶态NiO薄膜的非易失性存储器件
公开(公告)号：KR101124504B1
公开(公告)日：2012-03-15
申请号：KR1020050088236
申请日：2005-09-22
申请人： 삼성전자주식회사
发明人： 박성호 , 서범석 , 이명재 , 구준모 , 서순애 , 차영관
IPC分类号： H01L21/205 , H01L27/10
CPC分类号： H01L27/115 , C23C16/406 , C23C16/45553 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： 누설전류가 작고 저항특성이 개선되어 스위칭특성이 향상된 비정질 NiO 박막의 제조방법이 개시된다. 본 발명에 따른 비정질 NiO 박막의 제조방법은, 진공챔버 내에 기판을 준비하는 단계, 니켈전구체 물질을 준비하는 단계, 상기 니켈전구체 물질을 기화시켜 소스가스를 준비하는 단계, O
3 과 H
2 O 가스 중 적어도 하나를 포함하는 반응가스를 준비하는 단계, 퍼지가스를 준비하는 단계 및 상기 진공챔버 내에 상기 소스가스, 퍼지가스, 반응가스 및 퍼지가스를 순차적으로 불어넣는 1사이클의 공정을 실시하여 상기 기판 위에 단원자층(monolayer) NiO 박막을 형성하는 단계를 포함한다.

12. 发明公开

KR1020110124585A 이중 채널을 구비하는 산화물 반도체 광센서 无效
标题翻译：具有双通道的氧化物半导体光电传感器
公开(公告)号：KR1020110124585A
公开(公告)日：2011-11-17
申请号：KR1020100044054
申请日：2010-05-11
申请人： 삼성전자주식회사
发明人： 박성호 , 송이헌 , 김창정 , 전상훈 , 안승언
IPC分类号： H01L31/00 , H01L29/78
CPC分类号： H01L29/7869 , H01L29/4232 , H01L29/78618 , H01L29/78696
摘要： PURPOSE: An oxide semiconductor optical sensor including a dual channel is provided to reduce power consumption by maintaining a low stable threshold voltage near 0 volt when light is not inputted. CONSTITUTION: A gate(13) is partially arranged on a substrate(11). A gate insulation layer(14) is arranged on the gate and the substrate to cover the gate. A first channel layer(15) is arranged on the gate insulation layer. A second channel layer(16) is arranged on the first channel layer. A source(17) and a drain(18) cover both sides of the first and second channel layers.
摘要翻译：目的：提供一种包括双通道的氧化物半导体光学传感器，以便在不输入光时，通过保持接近0伏的低稳定阈值电压来降低功耗。构成：栅极（13）部分地布置在基板（11）上。栅极绝缘层（14）布置在栅极和基板上以覆盖栅极。第一沟道层（15）布置在栅极绝缘层上。第二沟道层（16）布置在第一沟道层上。源极（17）和漏极（18）覆盖第一和第二沟道层的两侧。

13. 发明公开

KR1020110081639A 트랜지스터 및 그 제조방법 有权
标题翻译：晶体管及其制造方法
公开(公告)号：KR1020110081639A
公开(公告)日：2011-07-14
申请号：KR1020100001896
申请日：2010-01-08
申请人： 삼성전자주식회사
发明人： 전상훈 , 송이헌 , 김창정 , 박성호
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L29/42312 , H01L29/4232 , H01L29/78696
摘要： PURPOSE: A transistor and a method of manufacturing the same are provided to prevent the deterioration of the characteristic of a transistor due to etching a gate insulating layer and implement easy scale down. CONSTITUTION: In a transistor and a method of manufacturing the same, an oxide semiconductor layer has a source area(S1), a drain area(D1), and a channel region(C1) between them. The gate electrode is included on the channel region. A gate insulating layer has an extension region which is extended from the between the channel and the gate electrode to the source and the drain region.
摘要翻译：目的：提供一种晶体管及其制造方法，以防止由于蚀刻栅极绝缘层而导致的晶体管特性的劣化，并且易于缩小。构成：在晶体管及其制造方法中，氧化物半导体层在它们之间具有源极区（S1），漏极区（D1）和沟道区（C1）。栅极包括在沟道区域中。栅极绝缘层具有从沟道和栅电极之间延伸到源极和漏极区的延伸区域。

14. 发明公开

KR1020110071712A 투명한 연결배선을 구비한 이미지 센서 有权
标题翻译：具有透明互连的图像传感器
公开(公告)号：KR1020110071712A
公开(公告)日：2011-06-29
申请号：KR1020090128346
申请日：2009-12-21
申请人： 삼성전자주식회사
发明人： 전상훈 , 송이헌 , 박성호 , 김창정 , 허지현
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/14612 , H01L27/14616
摘要： PURPOSE: An image sensor having transparent interconnections is provided to increase the intensity of radiation on a photodiode area by using a transparent connection wire and a contact plug. CONSTITUTION: In an image sensor having transparent interconnections, an n-type well region(111) is formed in a p type silicon board(110). A p-type impurity region(112) is formed in the surface of the n-type well region. The n-type well region and p-type impurity region forms a photodiode(PD). A plurality of transistors forms a circuit outputting a signal measured from the photodiode. Transparent connection wirings(128,132) are connected to a plurality of transistors and the photodiode.
摘要翻译：目的：提供具有透明互连的图像传感器，以通过使用透明连接线和接触插头来增加光电二极管区域上的辐射强度。构成：在具有透明互连的图像传感器中，在p型硅板（110）中形成n型阱区（111）。在n型阱区的表面形成p型杂质区（112）。 n型阱区和p型杂质区形成光电二极管（PD）。多个晶体管形成输出从光电二极管测量的信号的电路。透明连接布线（128,132）连接到多个晶体管和光电二极管。

15. 发明公开

KR1020100104378A 수퍼커패시터용 전극, 이를 채용한 수퍼커패시터, 및 이의 제조방법 无效
标题翻译：用于超级电容器的电极，包含该电极的超级电容器及其制备方法
公开(公告)号：KR1020100104378A
公开(公告)日：2010-09-29
申请号：KR1020090022753
申请日：2009-03-17
申请人： 삼성전자주식회사 , 성균관대학교산학협력단
发明人： 박진환 , 박성호 , 신태연
IPC分类号： H01G11/02 , H01G11/26 , B82Y30/00
CPC分类号： H01G9/0029 , H01G9/058 , H01G11/26 , H01G11/46 , H01G11/86 , Y02E60/13
摘要： PURPOSE: An electrode for a super capacitor, the super capacitor using the same, and a manufacturing method thereof are provided to increase the capacity of the super capacitor by adopting the electrode for the supper capacitor, which includes a metal nano structure. CONSTITUTION: An electrode for a super capacitor includes a conductive substrate, a metal nano structure, and a metal oxide. The metal nano structure is formed on the conductive substrate and is a porous metal nano bar or porous metal nano tube. The metal nano structure includes one or more among Au, Ag, Ni, Cu, Pt, Mn, Ru, and Li. The metal oxide is coated on the metal nano structure.
摘要翻译：目的：提供一种用于超级电容器的电极，使用该超级电容器的超级电容器及其制造方法，以通过采用包括金属纳米结构的超级电容器用电极来增加超级电容器的容量。构成：用于超级电容器的电极包括导电基底，金属纳米结构和金属氧化物。金属纳米结构形成在导电性基体上，是多孔金属纳米棒或多孔金属纳米管。金属纳米结构包括Au，Ag，Ni，Cu，Pt，Mn，Ru和Li中的一种或多种。金属氧化物被涂覆在金属纳米结构上。

16. 发明公开

KR1020100061064A 반도체 소자 및 그 제조방법 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020100061064A
公开(公告)日：2010-06-07
申请号：KR1020080119942
申请日：2008-11-28
申请人： 삼성전자주식회사 , 성균관대학교산학협력단
发明人： 박재철 , 송이헌 , 박영수 , 권기원 , 김창정 , 김경국 , 박성호 , 이성훈 , 김상욱 , 김선일
IPC分类号： H01L29/786
CPC分类号： H01L27/1225 , H01L21/8238 , H01L27/092 , H01L27/1251
摘要： PURPOSE: A semiconductor device and a manufacturing method thereof are provided to easily form as a low-temperature process by forming a first oxide channel layer and a second oxide channel layer into an oxide. CONSTITUTION: A first thin film transistor includes a first source(S10), a first drain, a first channel layer, and a first gate. A second thin film transistor includes a second source(S20), a second drain, a second channel layer, and a second gate. One is a p-type oxide layer among the first and the second channel layer. The first and the second thin film transistor is a bottom gate(BG10, BG20) structure or a top gate structure. One is a dual gate including more other gates among the first and the second thin film transistor at least.
摘要翻译：目的：通过将第一氧化物沟道层和第二氧化物沟道层形成为氧化物，提供半导体器件及其制造方法以容易地形成为低温工艺。构成：第一薄膜晶体管包括第一源（S10），第一漏极，第一沟道层和第一栅极。第二薄膜晶体管包括第二源（S20），第二漏极，第二沟道层和第二栅极。一个是第一和第二沟道层中的p型氧化物层。第一和第二薄膜晶体管是底栅（BG10，BG20）结构或顶栅结构。一个是至少包括第一和第二薄膜晶体管中的更多其它栅极的双栅极。

17. 发明授权

KR100912873B1 영상 생성 방법 및 장치 失效
标题翻译：用于产生藻类的方法和装置
公开(公告)号：KR100912873B1
公开(公告)日：2009-08-19
申请号：KR1020070055252
申请日：2007-06-05
申请人： 삼성전자주식회사
发明人： 최원희 , 이마이프란시스코 , 박성호 , 이성덕
IPC分类号： H04N9/73
CPC分类号： H04N5/235 , H04N5/2355 , H04N5/35536
摘要： 영상 생성 방법 및 장치가 제공된다. 본 발명의 실시예에 따른 영상 생성 방법은 서로 다른 노광량을 갖는 복수의 영상을 획득하는 단계, 복수의 영상 각각에 대하여 화이트 밸런싱(white balancing)을 수행하는 단계 및 화이트 밸런싱이 수행된 각각의 영상을 합성하는 단계를 포함한다.
영상, 광대역, 다이나믹 레인지, high dynamic range, 휘도, 색온도, CCT, 화이트 밸런싱, white ballancing

18. 发明公开

KR1020090031103A 반도체 소자 및 상기 반도체 소자의 금속 게이트 형성 방법 无效
标题翻译：用于制造半导体器件的金属栅的半导体器件和方法
公开(公告)号：KR1020090031103A
公开(公告)日：2009-03-25
申请号：KR1020070096945
申请日：2007-09-21
申请人： 삼성전자주식회사
发明人： 노진서 , 박성호 , 전중석
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823842
摘要： A semiconductor device and method of forming the metal gate of the semiconductor device are provided to lower the resistance of the gate by forming the gate by the combination of the metal having appropriate work function. The P well region(14) is formed in the semiconductor substrate. The gate insulating layer(22) is formed in the semiconductor substrate. The metal gate(23) for NMOS is formed on the gate insulating layer of the P-well region. The metal-nitride including the metal gate is formed with Mo and Al. The metal-nitride can be MoAlN. At this time, the content of Al can be within the range of 22% ~ 32%.
摘要翻译：提供形成半导体器件的金属栅极的半导体器件和方法，通过通过具有适当功函的金属的组合形成栅极来降低栅极的电阻。 P阱区域（14）形成在半导体衬底中。栅极绝缘层（22）形成在半导体衬底中。用于NMOS的金属栅极（23）形成在P阱区域的栅极绝缘层上。包括金属栅极的金属氮化物由Mo和Al形成。该金属氮化物可以是MoAlN。此时，Al的含量可以在22％〜32％的范围内。

19. 发明公开

KR1020090025589A 반도체 소자 및 상기 반도체 소자의 금속 게이트 형성 방법 有权
标题翻译：用于制造半导体器件的金属栅的半导体器件和方法
公开(公告)号：KR1020090025589A
公开(公告)日：2009-03-11
申请号：KR1020070090553
申请日：2007-09-06
申请人： 삼성전자주식회사
发明人： 박성호 , 노진서 , 전중석
IPC分类号： H01L21/336 , H01L21/8238
CPC分类号： H01L21/823828 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： A semiconductor device and a method for manufacturing a metal gate of the semiconductor device are provided to obtain high diffusion barrier characteristic by forming TiAlN thin film with low Al in an interface of the metal gate. A metal gate(34) is formed on a gate insulating layer. A metal gate is made of the metal nitride including Al or Si. An upper part(34c) and a lower part(34a) of the metal gate has relatively high contents of Al or Si. A central part(34b) of the metal gate has a relatively low content of Al or Si.
摘要翻译：提供一种用于制造半导体器件的金属栅极的半导体器件和方法，以通过在金属栅极的界面中形成具有低Al的TiAlN薄膜来获得高扩散阻挡特性。金属栅极（34）形成在栅极绝缘层上。金属栅极由包括Al或Si的金属氮化物制成。金属栅极的上部（34c）和下部（34a）具有较高含量的Al或Si。金属栅极的中心部分（34b）具有相对低的Al或Si含量。

20. 发明公开

KR1020090008629A 공기조화기 无效
标题翻译：冷气机
公开(公告)号：KR1020090008629A
公开(公告)日：2009-01-22
申请号：KR1020070071714
申请日：2007-07-18
申请人： 삼성전자주식회사
发明人： 박성호 , 윤연섭
IPC分类号： F24F13/14 , F24F13/08 , F24F1/00
摘要： An air-conditioner is provided that a part of the air discharged besides the main part blade through outlet is guided to the front of the main body. An air-conditioner comprises a case(20) in which the front side is open while being fixed to the wall of building, a bell mouth(30) which is posted at the front side of the case and is prepared so that the ventilation fan(60) be installed, a main body consisting of the front panel(40) combined in the front side of bell mouth and the front grill(50) arranged in the front panel. The inlet for the indoor air being inhaled to the inside of the main body is formed at the front panel of the main body. The filter filtering the foreign material of the air inhaled through inlet is prepared at the inner side of the front panel.
摘要翻译：设置有通过出口将除了主体叶片之外排出的空气的一部分被引导到主体的前方的空调。一种空调机，包括一个固定在建筑物墙壁上的前侧敞开的壳体（20），一个贴在外壳前侧的喇叭口（30），并被制成使得通风扇（60），由组合在喇叭口前侧的前面板（40）和布置在前面板中的前格栅（50）组成的主体。室内空气吸入主体内部的入口形成在主体的前面板上。通过入口吸入的空气的过滤器过滤器在前面板的内侧准备。

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