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11. 发明专利

JP5337862B2 Semiconductor light-emitting element 有权
公开(公告)号：JP5337862B2
公开(公告)日：2013-11-06
申请号：JP2011276729
申请日：2011-12-19
申请人：株式会社東芝
发明人：浩一橘 , 肇名古 , 年輝彦坂 , 重哉木村 , 真也布上
IPC分类号： H01L33/32 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminous efficiency. SOLUTION: A semiconductor light-emitting element comprises: an n-type semiconductor layer including an n-type GaN layer; an n-side electrode connected to the n-type semiconductor layer; a p-type semiconductor layer including a p-type GaN layer and a p-type GaN contact layer stacked on the p-type GaN layer; a p-side electrode connected to the p-type semiconductor layer; a light-emitting portion that is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a plurality of well layers; a first layer having a thickness of 0.5 to 5 nm that is provided between the light-emitting portion and the p-type semiconductor layer and includes AlGaN having a first Al composition ratio of 0.001 to 0.05; a second layer that is provided between the first layer and the p-type semiconductor layer and includes AlGaN having a second Al composition ration of 0.1 to 0.2; and an intermediate layer having a thickness of 3 to 8 nm that contacts a p-type well layer nearest the p-type semiconductor layer in between the first layer and the light-emitting portion, includes In z1 Ga 1-z1 N (0≤z1 COPYRIGHT: (C)2012,JPO&INPIT

12. 发明专利

JP5306254B2 Semiconductor light-emitting element 有权
公开(公告)号：JP5306254B2
公开(公告)日：2013-10-02
申请号：JP2010029516
申请日：2010-02-12
申请人：株式会社東芝
发明人：肇名古 , 浩一橘 , 年輝彦坂 , 重哉木村 , 真也布上
IPC分类号： H01L33/32 , H01L21/205
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/04 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device (110, 111, 112, 112a, 112b) includes n-type and p-type semiconductor layers (10, 20), a light emitting portion (30), a multilayered structural body (40), and an n-side intermediate layer (50). The light emitting portion (30) is provided between the semiconductor layers (10, 20). The light emitting portion (30) includes barrier layers (31) containing GaN, and a well layer (32) provided between the barrier layers (31). The well layer (32) contains In x1 Ga 1-x1 N. The body (40) is provided between the n-type semiconductor layer (10) and the light emitting portion (30). The body (40) includes: first layers (41) containing GaN, and a second layer (42) provided between the first layers (41). The second layer (42) contains ln x2 Ga 1-x2 N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer (50) is provided between the body (40) and the light emitting portion (30) and includes a third layer (51) containing Al y1G a 1-y1 N (0

13. 发明专利

JP5275276B2 Semiconductor light-emitting element 有权
公开(公告)号：JP5275276B2
公开(公告)日：2013-08-28
申请号：JP2010051040
申请日：2010-03-08
申请人：株式会社東芝
发明人：泰輔佐藤 , 俊行岡 , 浩一橘 , 真也布上 , 一史塩澤 , 孝佳藤井
IPC分类号： H01L33/22 , H01L33/32
CPC分类号： H01L33/20 , H01L33/46
摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

14. 发明专利

JP5238867B2 A method of manufacturing a semiconductor light-emitting element 有权
公开(公告)号：JP5238867B2
公开(公告)日：2013-07-17
申请号：JP2011244330
申请日：2011-11-08
申请人：株式会社東芝
发明人：肇名古 , 浩一橘 , 年輝彦坂 , 真也布上
IPC分类号： H01L33/32 , H01L21/205 , H01L33/22 , H01S5/343

15. 发明专利

JPWO2011033570A1 半導体発光素子有权
公开(公告)号：JPWO2011033570A1
公开(公告)日：2013-02-07
申请号：JP2011531644
申请日：2009-09-17
申请人：株式会社東芝
发明人：泰輔佐藤 , 泰輔佐藤 , 安藤　雅信 , 雅信安藤 , 名古　肇 , 肇名古 , 浩一橘 , 浩一橘 , 俊行岡 , 俊行岡 , 布上　真也 , 真也布上
IPC分类号： H01L33/32
CPC分类号： H01L33/007 , H01L33/46
摘要：光取り出し効率の高い半導体発光素子を提供する。発光波長に対して透明な基板11と、基板11上の第1領域12に形成され、基板11の屈折率n0より小さい屈折率n1を有する第1誘電体層14と、基板11上であって第1領域12を囲む第2領域13に形成され、基板11の屈折率n0より大きい屈折率n2を有する第2誘電体層15と、第1誘電体層14上、第2誘電体層15上、および基板11上に形成された第1半導体層16と、第1半導体層16上に形成され、PN接合を有する活性層を含む第2半導体層17と、を具備する。

16. 发明专利

JPWO2011021264A1 窒化物半導体発光素子有权
公开(公告)号：JPWO2011021264A1
公开(公告)日：2013-01-17
申请号：JP2010504971
申请日：2009-08-17
申请人：株式会社東芝
发明人：浩一橘 , 浩一橘 , 名古　肇 , 肇名古 , 年輝彦坂 , 年輝彦坂 , 布上　真也 , 真也布上
IPC分类号： H01L33/32 , H01S5/343
CPC分类号： H01L33/32 , H01L33/06
摘要：基板(1)上に一対のクラッド層間に挟まれた単一量子井戸構造又は多重量子井戸構造の活性層(4)を具備し、活性層(4)は、量子井戸層(4a)と、この量子井戸層(4a)を、量子井戸層(4a)よりもバンドギャップが大きい一対のバリア層(4b)により挟んだ構造を有し、一対のバリア層(4b)のそれぞれは、量子井戸層側から順に、Iny1Ga1−y1Nから構成される第1のサブバリア層(4b1)と、Iny2Ga1−y2Nから構成される第2のサブバリア層(4b2)と、Iny3Ga1−y3Nから構成される第3のサブバリア層(4b3)とを含み、0≦y1,y3

17. 发明专利

JP5050044B2 Vapor phase growth method 有权
公开(公告)号：JP5050044B2
公开(公告)日：2012-10-17
申请号：JP2009283352
申请日：2009-12-14
申请人：株式会社東芝
发明人：佳幸原田 , 肇名古 , 真也布上 , 年輝彦坂 , 浩一橘
IPC分类号： H01L21/205 , C23C16/34 , H01L33/32 , H01S5/34
CPC分类号： C23C16/45504 , C23C16/303 , C23C16/45574 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L22/26 , H01L2924/0002 , H01L2924/00

19. 发明专利

JP5388967B2 Semiconductor light-emitting element 有权
公开(公告)号：JP5388967B2
公开(公告)日：2014-01-15
申请号：JP2010178534
申请日：2010-08-09
申请人：株式会社東芝
发明人：倫也塩田 , 年輝彦坂 , 佳幸原田 , 浩一橘 , 真也布上
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/04 , H01L33/32

20. 发明专利

JP5379843B2 Semiconductor light-emitting element 有权
公开(公告)号：JP5379843B2
公开(公告)日：2013-12-25
申请号：JP2011281325
申请日：2011-12-22
申请人：株式会社東芝
发明人：年輝彦坂 , 肇名古 , 浩一橘 , 俊秀伊藤 , 真也布上
IPC分类号： H01L33/32 , H01L21/205 , H01L33/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with a low driving voltage. SOLUTION: A semiconductor light-emitting element comprises an n-type semiconductor layer, an electrode, a p-type semiconductor layer, and a light-emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode. The p-type semiconductor layer includes a p-side contact layer contacting the electrode. The light-emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer is provided between the p-side contact layer and the light-emitting layer and includes a p-type layer with a p-type impurity concentration lower than that of the p-type contact layer. The p-side contact layer includes a plurality of protrusions protruding in a first direction toward the p-type semiconductor layer from the n-type semiconductor layer. The density of the plurality of protrusions in the plane perpendicular to the first direction ranges from 5×10 7 pieces/cm 2 or more to 2×10 8 pieces/cm 2 or less. The Mg concentration contained in the plurality of protrusions is higher than that contained in the portions other than the protrusions. COPYRIGHT: (C)2012,JPO&INPIT

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