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11. 发明申请

US20100095979A1 REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 失效
标题翻译：具有循环高低压清洁步骤的远程等离子清洁工艺
公开(公告)号：US20100095979A1
公开(公告)日：2010-04-22
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B7/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

12. 发明授权

US07678715B2 Low wet etch rate silicon nitride film 失效
标题翻译：低湿蚀刻速率氮化硅膜
公开(公告)号：US07678715B2
公开(公告)日：2010-03-16
申请号：US11962674
申请日：2007-12-21
申请人： Hemant P. Mungekar , Jing Wu , Young S. Lee , Anchuan Wang
发明人： Hemant P. Mungekar , Jing Wu , Young S. Lee , Anchuan Wang
IPC分类号： H01L21/00 , C23C14/08
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/505 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/31111
摘要： The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.
摘要翻译：本发明涉及在低于600℃的衬底温度下使用高密度等离子体化学气相沉积技术在衬底上沉积低湿蚀刻速率的氮化硅膜的方法。该方法还涉及维持相对较高的氮与硅比例等离子体和低过程压力。

13. 发明授权

US07629271B1 High stress diamond like carbon film 失效
标题翻译：高应力金刚石像碳膜
公开(公告)号：US07629271B1
公开(公告)日：2009-12-08
申请号：US12233881
申请日：2008-09-19
申请人： Jing Wu , Anchuan Wang , Robert T. Chen , Young S. Lee
发明人： Jing Wu , Anchuan Wang , Robert T. Chen , Young S. Lee
IPC分类号： H01L21/31
CPC分类号： H01L21/3146 , C23C16/0218 , C23C16/26
摘要： A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only C2H2 and the additive gas includes Ar.
摘要翻译：提供了一种在衬底上形成场效应晶体管上的压缩膜的方法。场效应晶体管包括在衬底内的漏极和源极之间的沟道区域。沟道区域由栅电极控制。该方法包括在场效应晶体管上沉积类金刚石碳（DLC）膜，以通过产生包括前体气体和添加气体的处理气体的等离子体来压缩沟道区域，其中前体基本上仅包含C2H2和添加剂气体包括Ar。

14. 发明申请

US20090068853A1 IMPURITY CONTROL IN HDP-CVD DEP/ETCH/DEP PROCESSES 失效
标题翻译： HDP-CVD DEP / ETCH / DEP工艺中的污染控制
公开(公告)号：US20090068853A1
公开(公告)日：2009-03-12
申请号：US12204523
申请日：2008-09-04
申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
发明人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
IPC分类号： H01L21/314
CPC分类号： C23C16/045 , C23C16/4408 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31608 , H01L21/76229
摘要： Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.
摘要翻译：公开了在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。氧化硅膜的第一部分使用高密度等离子体工艺沉积在衬底上并在间隙内。此后，将氧化硅膜的沉积的第一部分的一部分回蚀刻。这包括使卤素前体通过第一导管从卤素前体源流到基底处理室，从卤素前体形成高密度等离子体，并且在部分已被回蚀后终止流动卤素前体。此后，卤素清除剂流到基板处理室以与基板处理室中的残留卤素反应。此后，使用高密度等离子体处理，在氧化硅膜的第一部分和间隙内沉积第二部分氧化硅膜。

15. 发明申请

US20080029484A1 In-situ process diagnostics of in-film aluminum during plasma deposition 审中-公开
标题翻译：等离子体沉积期间膜内铝的原位工艺诊断
公开(公告)号：US20080029484A1
公开(公告)日：2008-02-07
申请号：US11492639
申请日：2006-07-25
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Young S. Lee
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Young S. Lee
IPC分类号： C23F1/00 , G06F19/00 , H01L21/306 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32972 , C23C16/4401 , C23C16/52 , H01J37/32935
摘要： The concentration of various contaminants in a plasma can be monitored during processing of a substrate such as a silicon wafer, in order to prevent an unacceptable amount of contamination from being deposited on the substrate. The radiation emitted from the plasma through a window in the processing chamber during processing can be detected and measured by a tool such as an optical emission spectrograph (OES) and the relative intensity of peaks in the spectrum corresponding to various contaminants can be analyzed in order to determine contaminant concentration. In one embodiment, the concentration of aluminum in a plasma is monitored during a plasma chemical vapor deposition (CVD) process in order to ensure that the amount of aluminum in the produced device is lower than a maximum threshold amount.
摘要翻译：为了防止在衬底上沉积不可接受量的污染物，可以在诸如硅晶片的衬底的处理期间监测等离子体中各种污染物的浓度。可以通过诸如光发射光谱仪（OES）的工具来检测和测量从等离子体通过处理室中的处理室中的窗口发射的辐射，并且可以按顺序分析对应于各种污染物的光谱中的峰的相对强度以确定污染物浓度。在一个实施例中，在等离子体化学气相沉积（CVD）工艺期间监测等离子体中铝的浓度，以确保所生产的装置中的铝量低于最大阈值量。

16. 发明授权

US06575174B2 Hair grooming brush 失效
标题翻译：头发修饰刷
公开(公告)号：US06575174B2
公开(公告)日：2003-06-10
申请号：US09823348
申请日：2001-04-02
申请人： Young S. Lee
发明人： Young S. Lee
IPC分类号： A45D2400
CPC分类号： A46B9/023 , A46B2200/102 , A46B2200/104 , A46D1/00
摘要： A hair grooming brush with a plurality or rows of curved wavy bristles, rather than traditional straight bristles found on brushes and combs. The curvature of the bristles produces a springiness to the bristles when pressure is applied during the combing action. The springiness of the numerous rows of bristles, translates into a massaging effect upon the hair and scalp. Rows of curved bristles are more effective at untangling the hair. The three different sections of the bristle, the lower, middle and tip sections, can be either straight or curved. Additionally the rows can alternate between various formations of bristles.
摘要翻译：一个头发修饰的刷子，具有多个或多排弯曲的波浪刷毛，而不是在刷子和梳子上发现的传统直鬃毛。当在梳理动作期间施加压力时，刷毛的曲率对刷毛产生弹性。许多刷毛的弹性转化成对头发和头皮的按摩效果。弯曲的刷毛行在解开头发时更有效。刷毛的三个不同部分，下部，中部和末端部分可以是直的或弯曲的。此外，行可以在各种刷毛形成之间交替。

17. 发明授权

US5557849A Nail clipper 失效
标题翻译：指甲刀
公开(公告)号：US5557849A
公开(公告)日：1996-09-24
申请号：US570662
申请日：1995-12-11
申请人： Young S. Lee , Jong C. Kim
发明人： Young S. Lee , Jong C. Kim
IPC分类号： A45D29/02
CPC分类号： A45D29/02
摘要： A nail clipper includes a clipper body having a front section and a rear section acting as a first handle, the front section including a top plate and a base plate defining a passageway therebetween. The top plate and the base plate each has an aperture substantially aligned to each other and adapted to receive a finger nail therewithin. A blade is slidably positioned in the passageway. The nail clipper further includes a second handle having a front end connected to the blade, and a flexible plate. The first end of the flexible plate is attached to the second handle and the opposing second end of the flexible plate is attached to the first handle. The flexible plate is adapted to normally bias the second handle and the blade in a retracted position rearward from the apertures. However, when the second handle is gripped against the first handle, the bias of the flexible plate is overcome to advance the blade from the retracted position to a forward position in which the cutting edge of the blade passes the apertures to cut a finger nail positioned within the apertures.
摘要翻译：指甲刀包括具有作为第一手柄的前部和后部的推剪体，所述前部包括顶板和在其间限定通路的基板。顶板和基板各自具有基本上彼此对准并且适于在其中接收指甲的孔。叶片可滑动地定位在通道中。指甲刀还包括具有连接到叶片的前端的第二手柄和柔性板。柔性板的第一端附接到第二手柄，并且柔性板的相对的第二端附接到第一手柄。柔性板适于在第二把手和叶片处于从孔的后方缩回的位置中。然而，当第二把手被夹在第一把手上时，克服了柔性板的偏压，以将刀片从缩回位置推进到前进位置，在该位置刀片的切割刃通过孔以切割定位的指甲在孔内。

18. 发明授权

US10198444B2 Display of presentation elements 有权
公开(公告)号：US10198444B2
公开(公告)日：2019-02-05
申请号：US13457524
申请日：2012-04-27
申请人： Santosh S. Basapur , Shirley A. Chaysinh , Young S. Lee , Hiren M. Mandalia , Ashley B. Novak , Narayanan Venkitaraman
发明人： Santosh S. Basapur , Shirley A. Chaysinh , Young S. Lee , Hiren M. Mandalia , Ashley B. Novak , Narayanan Venkitaraman
IPC分类号： G06F17/30 , G11B27/34 , H04N21/431 , H04N21/478 , H04N21/488 , H04N21/854 , H04N21/4722
摘要： Disclosed are methods and apparatus for displaying a plurality of presentation elements to a user. A progress bar is displayed. A length of the progress bar is representative of a duration of a multimedia presentation. A communication box is also displayed. The communication box comprises a marker and a communication composed by an originator in relation to a certain point or time period within the multimedia presentation. The progress bar and the communication box are displayed such that the marker is in alignment with a position along the length of the progress bar that corresponds to the point or time period in the multimedia presentation in relation to which the communication was composed. The marker may be moved relative to the progress bar.

19. 发明申请

US20130059440A1 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN 失效
标题翻译：选择性抑制含有硅和氮的材料的干燥速率
公开(公告)号：US20130059440A1
公开(公告)日：2013-03-07
申请号：US13449441
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/311
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

20. 发明申请

US20120190178A1 POLYSILICON FILMS BY HDP-CVD 失效
标题翻译：聚硅氧烷膜通过HDP-CVD
公开(公告)号：US20120190178A1
公开(公告)日：2012-07-26
申请号：US13089966
申请日：2011-04-19
申请人： Anchuan Wang , Xiaolin Chen , Young S. Lee
发明人： Anchuan Wang , Xiaolin Chen , Young S. Lee
IPC分类号： H01L21/20 , H01L21/3205
CPC分类号： H01L21/0262 , C23C16/0245 , C23C16/045 , C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02595 , H01L21/28556
摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.
摘要翻译：描述形成多晶硅层的方法。所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

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