专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08569796B2 Semiconductor wafer and semiconductor device having multilayered nitride semiconductor layer 有权
标题翻译：具有多层氮化物半导体层的半导体晶片和半导体器件
公开(公告)号：US08569796B2
公开(公告)日：2013-10-29
申请号：US13314466
申请日：2011-12-08
申请人： Tetsuji Matsuo
发明人： Tetsuji Matsuo
IPC分类号： H01L29/06
CPC分类号： H01L29/7787 , H01L29/2003 , H01L33/06 , H01L33/32
摘要： A semiconductor wafer includes a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer, wherein the semiconductor wafer has conductivity in a film-thickness direction.
摘要翻译：半导体晶片包括具有这样的结构的多层膜，其中非掺杂的第一氮化物半导体层和具有比第一氮化物半导体层更大的晶格常数的非掺杂的第二氮化物半导体层交替层叠，并且非掺杂的第三氮化物半导体层位于并且具有比第一氮化物半导体层更大的晶格常数，其中半导体晶片在膜厚度方向上具有导电性。

12. 发明申请

US20090236628A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20090236628A1
公开(公告)日：2009-09-24
申请号：US12407093
申请日：2009-03-19
申请人： Tetsuji MATSUO
发明人： Tetsuji MATSUO
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38 , H01L2933/0016
摘要： A semiconductor light emitting device includes: a conductive substrate; a semiconductor light emitting layer which includes a first semiconductor layer formed on one surface of the conductive substrate and having a first conductivity type, and a second semiconductor layer formed on the first semiconductor layer and having a second conductivity type opposite to the first conductivity type; first light emitting spots which are alternately arranged around a periphery of the semiconductor light emitting layer and emitting light to an exterior from the semiconductor light emitting layer; second light emitting spots having surfaces intersecting with the first light emitting spots and emitting light at an amount smaller than an amount of light emitted via the first light emitting spots; and wirings arranged along the second light emitting spots and electrically short circuiting an area between the first light emitting layer and the surfaces of the conductive substrate.
摘要翻译：一种半导体发光器件包括：导电衬底; 半导体发光层，其包括形成在所述导电基板的一个表面上并具有第一导电类型的第一半导体层，以及形成在所述第一半导体层上并具有与所述第一导电类型相反的第二导电类型的第二半导体层; 第一发光点，交替地布置在半导体发光层的周围并从该半导体发光层向外部发光; 第二发光点具有与第一发光点相交的表面，并以比通过第一发光点发射的光量少的量发光; 以及沿着第二发光点布置的布线，并且使第一发光层和导电基板的表面之间的区域电短路。

13. 发明申请

US20080261340A1 SURFACE-ROUGHENING METHOD 有权
标题翻译：表面粗糙化方法
公开(公告)号：US20080261340A1
公开(公告)日：2008-10-23
申请号：US12104097
申请日：2008-04-16
申请人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
发明人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
IPC分类号： H01L33/00 , H01L21/302
CPC分类号： H01L33/22 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then the masking film is heated to cause its coagulation into discrete particles. Then, using the silver particles as a mask, the wafer surface is dry etched to create pits therein. The deposition of silver on the wafer surface and its thermal coagulation into particles may be either successive or concurrent.
摘要翻译：公开了用于粗糙化LED晶片的发光表面以减少所产生的光的内部全反射的方法。首先将银掩模膜沉积在晶片的表面上以切割成LED芯片。然后加热掩蔽膜使其凝结成离散的颗粒。然后，使用银颗粒作为掩模，干燥蚀刻晶片表面以在其中产生凹坑。银在晶片表面上的沉积及其热凝固成颗粒可以是连续的或同时的。

14. 发明申请

US20140110938A1 INDUCTION HEATING APPARATUS AND POWER GENERATION SYSTEM COMPRISING THE SAME 有权
标题翻译：感应加热装置和包括其的发电系统
公开(公告)号：US20140110938A1
公开(公告)日：2014-04-24
申请号：US14123807
申请日：2012-05-30
申请人： Toru Okazaki , Tetsuji Matsuo , Takeshi Mifune
发明人： Toru Okazaki , Tetsuji Matsuo , Takeshi Mifune
IPC分类号： H05B6/10 , H02N99/00
CPC分类号： H02N99/00 , F03D9/22 , F03D9/25 , H05B6/108 , H05B6/109 , Y02E10/72 , Y02E10/725
摘要： An induction heating apparatus includes a rotor having a rotation shaft, and a stator having a heating portion disposed at a distance from the rotor. A coil that generates magnetic flux in a direction of the heating portion is provided in the rotor. The heating portion is formed of a composite material of a magnetic material and a conductive material, and has a structure in which a magnetic material portion and a conductive material portion are combined. When the coil is in a position opposed to the heating portion, a cross-sectional area of the magnetic material portion is smaller than an area of linkage of magnetic flux generated by the coil in the heating portion, and the conductive material portion is disposed to surround a periphery of the magnetic material portion. A flow passage in which the heating medium circulates is provided in the heating portion.
摘要翻译：感应加热装置包括具有旋转轴的转子和具有与转子一定距离设置的加热部的定子。在转子中设置有沿加热部的方向产生磁通的线圈。加热部由磁性材料和导电材料的复合材料形成，并且具有磁性材料部分和导电材料部分组合的结构。当线圈处于与加热部分相对的位置时，磁性材料部分的横截面面积小于加热部分中线圈产生的磁通量的连接面积，导电材料部分设置在围绕磁性材料部分的周边。在加热部中设置有加热介质循环的流路。

15. 发明授权

US08704207B2 Semiconductor device having nitride semiconductor layer 有权
标题翻译：半导体器件具有氮化物半导体层
公开(公告)号：US08704207B2
公开(公告)日：2014-04-22
申请号：US13492151
申请日：2012-06-08
申请人： Masataka Yanagihara , Tetsuji Matsuo
发明人： Masataka Yanagihara , Tetsuji Matsuo
IPC分类号： H01L29/12
CPC分类号： H01L29/7787 , H01L29/1075 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device includes a silicon substrate, an aluminum nitride layer which is arranged on the silicon substrate and has a region where silicon is doped thereof as an impurity, a buffer layer which is arranged on the aluminum nitride layer and has a structure where a plurality of nitride semiconductor films are laminated, and a semiconductor functional layer which is arranged on the buffer layer and made of nitride semiconductor.
摘要翻译：半导体器件包括硅衬底，氮化铝层，其被布置在硅衬底上并且具有掺杂有硅的区域作为杂质;缓冲层，其布置在氮化铝层上并且具有多个层叠氮化物半导体膜的半导体功能层和配置在缓冲层上并由氮化物半导体构成的半导体功能层。

16. 发明申请

US20120181577A1 SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE HAVING MULTILAYERED NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：具有多层氮化物半导体层的半导体晶体管和半导体器件
公开(公告)号：US20120181577A1
公开(公告)日：2012-07-19
申请号：US13314466
申请日：2011-12-08
申请人： Tetsuji MATSUO
发明人： Tetsuji MATSUO
IPC分类号： H01L29/06
CPC分类号： H01L29/7787 , H01L29/2003 , H01L33/06 , H01L33/32
摘要： A semiconductor wafer includes a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer, wherein the semiconductor wafer has conductivity in a film-thickness direction.
摘要翻译：半导体晶片包括具有这样的结构的多层膜，其中非掺杂的第一氮化物半导体层和具有比第一氮化物半导体层更大的晶格常数的非掺杂的第二氮化物半导体层交替层叠，并且非掺杂的第三氮化物半导体层位于并且具有比第一氮化物半导体层更大的晶格常数，其中半导体晶片在膜厚度方向上具有导电性。

17. 发明授权

US08120049B2 Light-emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US08120049B2
公开(公告)日：2012-02-21
申请号：US12141273
申请日：2008-06-18
申请人： Tetsuji Matsuo , Shiro Takeda
发明人： Tetsuji Matsuo , Shiro Takeda
IPC分类号： H01L33/54 , H01L33/46
CPC分类号： H01L33/46 , H01L33/54 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： A light-generating semiconductor region is grown on a substrate of electroconductive silicon or like light-absorptive material. An anode is placed atop the light-generating semiconductor region, and a cathode under the substrate. The light-generating semiconductor region and the substrate are encapsulated in an epoxy envelope. In order to prevent the substrate from absorbing the light that has been radiated from the light-generating semiconductor region and reflected back from the envelope, the substrate has its side surfaces covered by a reflector layer. The reflector layer has its surfaces roughened, as a result of the roughening of the underlying substrate surfaces by dicing, for scattering the incident light.
摘要翻译：在导电硅或类似的光吸收材料的衬底上生长发光半导体区域。将阳极放置在发光半导体区域的顶部，并且在衬底下面放置阴极。光生成半导体区域和衬底被封装在环氧树脂封套中。为了防止基板吸收从发光半导体区域辐射并从外壳反射回的光，基板的侧面被反射层覆盖。由于通过切割使下面的基板表面粗糙化，反射层的表面变得粗糙，从而散射入射光。

18. 发明授权

US07893450B2 Semiconductor light-emitting element and semiconductor light-emitting element manufacturing method 失效
标题翻译：半导体发光元件和半导体发光元件的制造方法
公开(公告)号：US07893450B2
公开(公告)日：2011-02-22
申请号：US12169988
申请日：2008-07-09
申请人： Mikio Tazima , Yoshiki Tada , Tetsuji Matsuo
发明人： Mikio Tazima , Yoshiki Tada , Tetsuji Matsuo
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/08 , H01L33/10
摘要： An aspect of the present invention inheres in a semiconductor light-emitting element includes a light-emitting functional stacked body including a light-emitting region having a light-emitting function, and including a light extraction surface for extracting light emitted from the light-emitting region, and an upward convex lens disposed on the light extraction surface.
摘要翻译：本发明的半导体发光元件的一个方面包括：发光功能层叠体，其包括具有发光功能的发光区域，并且包括用于提取从发光部件发出的光的光提取面并且设置在光提取表面上的向上凸透镜。

19. 发明申请

US20080315232A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE 有权
标题翻译：发光半导体器件
公开(公告)号：US20080315232A1
公开(公告)日：2008-12-25
申请号：US12141273
申请日：2008-06-18
申请人： Tetsuji Matsuo , Shiro Takeda
发明人： Tetsuji Matsuo , Shiro Takeda
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/54 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： A light-generating semiconductor region is grown on a substrate of electroconductive silicon or like light-absorptive material. An anode is placed atop the light-generating semiconductor region, and a cathode under the substrate. The light-generating semiconductor region and the substrate are encapsulated in an epoxy envelope. In order to prevent the substrate from absorbing the light that has been radiated from the light-generating semiconductor region and reflected back from the envelope, the substrate has its side surfaces covered by a reflector layer. The reflector layer has its surfaces roughened, as a result of the roughening of the underlying substrate surfaces by dicing, for scattering the incident light.
摘要翻译：在导电硅或类似的光吸收材料的衬底上生长发光半导体区域。将阳极放置在发光半导体区域的顶部，并且在衬底下面放置阴极。光生成半导体区域和衬底被封装在环氧树脂封套中。为了防止基板吸收从发光半导体区域辐射并从外壳反射回的光，基板的侧面被反射层覆盖。由于通过切割使下面的基板表面粗糙化，反射层的表面变得粗糙，从而散射入射光。

20. 发明授权

US07405431B2 Light-emitting semiconductor device having an overvoltage protector 有权
标题翻译：具有过电压保护器的发光半导体器件
公开(公告)号：US07405431B2
公开(公告)日：2008-07-29
申请号：US11225837
申请日：2005-09-13
申请人： Hidekazu Aoyagi , Tetsuji Matsuo
发明人： Hidekazu Aoyagi , Tetsuji Matsuo
IPC分类号： H01L27/15
CPC分类号： H01L25/167 , H01L24/48 , H01L27/15 , H01L2224/48464 , H01L2924/00014 , H01L2924/01012 , H01L2924/01029 , H01L2924/12035 , H01L2924/12036 , H01L2224/45099 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： An LED includes a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating light. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflector of electroconductive material is formed on the other major surface of the semiconductor region for reflecting the light back toward the light-emitting surface of the semiconductor region. For protecting the LED against breakdown from overvoltages, a zener diode is employed which takes the form of a baseplate having two semiconductor regions of opposite conductivity types sandwiched between a pair of electrodes in the form of metal layers. The protector baseplate is integrated with the light-generating semiconductor region by joining one of the metal layers to the reflector under heat and pressure, thus serving as both mechanical support and overvoltage protector for the LED.
摘要翻译： LED包括具有夹在用于产生光的相反导电类型的两个约束层之间的有源层的发光半导体区域。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。在半导体区域的另一个主表面上形成导电材料的反射器，用于将光反射回半导体区域的发光表面。为了保护LED免受过电压击穿，采用齐纳二极管，其采用基板的形式，其具有夹在金属层形式的一对电极之间的具有相反导电类型的两个半导体区域的基板。保护器基板通过在加热和压力下将金属层之一连接到反射器而与发光半导体区域集成，从而用作LED的机械支撑和过电压保护器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式