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11. 发明申请

US20060094248A1 Method of oxidizing member to be treated 有权
标题翻译：氧化待处理物质的方法
公开(公告)号：US20060094248A1
公开(公告)日：2006-05-04
申请号：US10519451
申请日：2003-07-07
申请人： Tatsuo Nishita , Tsukasa Yonekawa , Keisuke Suzuki , Toru Sato
发明人： Tatsuo Nishita , Tsukasa Yonekawa , Keisuke Suzuki , Toru Sato
IPC分类号： H01L21/31
CPC分类号： H01L21/02238 , H01L21/02233 , H01L21/02255 , H01L21/31658
摘要： A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.
摘要翻译：提供了一种用于氧化被处理物体的方法，其中氧化物膜可以提供良好的膜质量，并且可以通过氮化物膜的热氧化获得氮化物膜和氧化物膜的层压结构。在可以容纳多个待处理物体的单个处理容器8中对待处理物体的表面进行氧化的方法中，至少在所述表面露出氮化物膜，主要使用活性羟基/氧物质，将处理压力设定在133Pa以下，将处理温度设定为400℃以上。在这些条件下，通过在多个待处理物体的表面上氧化氮化物膜，维持高的晶面间均匀性，获得具有良好的膜质量的氧化物膜。

12. 发明申请

US20050081789A1 Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method 有权
标题翻译：氮化硅膜形成方法，氮化硅膜形成系统和氮化硅膜形成系统预清洗方法
公开(公告)号：US20050081789A1
公开(公告)日：2005-04-21
申请号：US10986282
申请日：2004-11-12
申请人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
发明人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
IPC分类号： C23C16/34 , C23C16/44 , H01L21/318 , C23C16/00
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/4405 , C23C16/4412 , H01L21/0217 , H01L21/3185 , Y10S438/905
摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
摘要翻译：热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。将反应容器2在500-900℃的温度范围内加热，并且排气管（16）在100℃下被加热，然后拆卸和清洁排气管16.氨通过工艺气体供应管（13）进入反应容器（2），氨从反应容器（2）排出到排气管（16）中。

13. 发明申请

US20120178268A1 PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：等离子体CVD法，形成氮化硅膜的方法和制造半导体器件的方法
公开(公告)号：US20120178268A1
公开(公告)日：2012-07-12
申请号：US13423783
申请日：2012-03-19
申请人： Masayuki KOHNO , Tatsuo NISHITA , Toshio NAKANISHI
发明人： Masayuki KOHNO , Tatsuo NISHITA , Toshio NAKANISHI
IPC分类号： H01L21/318
CPC分类号： C23C16/511 , C23C16/345 , H01L21/3185 , H01L21/823807 , H01L29/518 , H01L29/78 , H01L29/7843
摘要： A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.
摘要翻译：等离子体处理装置通过使用具有多个槽的平面天线将微波引入处理室来产生等离子体。通过使用等离子体处理装置，将引入到处理室中的含氮气体和含硅气体变为等离子体状态，并且在通过使用等离子体将基板表面上的氮化硅膜沉积到通过氮气气体的类型和处理压力的组合来控制要形成的氮化硅膜的应力。

14. 发明授权

US08138103B2 Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device 有权
标题翻译：等离子CVD法，形成氮化硅膜的方法和半导体器件的制造方法
公开(公告)号：US08138103B2
公开(公告)日：2012-03-20
申请号：US12302861
申请日：2007-05-30
申请人： Masayuki Kohno , Tatsuo Nishita , Toshio Nakanishi
发明人： Masayuki Kohno , Tatsuo Nishita , Toshio Nakanishi
IPC分类号： H01L21/31 , H01L21/469 , H01L21/318 , C23C8/54
CPC分类号： C23C16/511 , C23C16/345 , H01L21/3185 , H01L21/823807 , H01L29/518 , H01L29/78 , H01L29/7843
摘要： A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.
摘要翻译：等离子体处理装置通过使用具有多个槽的平面天线将微波引入处理室来产生等离子体。通过使用等离子体处理装置，将引入到处理室中的含氮气体和含硅气体变为等离子体状态，并且在通过使用等离子体将基板表面上的氮化硅膜沉积到通过氮气气体的类型和处理压力的组合来控制要形成的氮化硅膜的应力。

15. 发明授权

US08114790B2 Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus 有权
标题翻译：等离子体CVD法，氮化硅膜形成法，半导体器件制造方法和等离子体CVD装置
公开(公告)号：US08114790B2
公开(公告)日：2012-02-14
申请号：US12302614
申请日：2007-05-30
申请人： Masayuki Kohno , Tatsuo Nishita , Toshio Nakanishi
发明人： Masayuki Kohno , Tatsuo Nishita , Toshio Nakanishi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/345 , C23C16/511 , H01L21/28273 , H01L21/3185 , H01L27/115 , H01L29/7843
摘要： A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave generation source configured to generate microwaves; a planar antenna including a plurality of slots and configured to supply microwaves generated by the microwave generation source through the slots into the process chamber; a gas supply mechanism configured to supply a film formation source gas into the process chamber; and an RF power supply configured to apply an RF power to the worktable. The apparatus is preset to turn a nitrogen-containing gas and a silicon-containing gas supplied in the process chamber into plasma by the microwaves, and to deposit a silicon nitride film on a surface of the target substrate by use of the plasma, while applying the RF power to the worktable.
摘要翻译：一种等离子体处理装置，包括被构造为真空排出的处理室; 工作台，其配置成将目标衬底放置在所述处理室内; 构造成产生微波的微波产生源; 平面天线，包括多个槽，并被配置为将微波产生源产生的微波通过所述槽提供到所述处理室中; 气体供给机构，其构造成将成膜源气体供给到所述处理室中; 以及被配置为向所述工作台施加RF电力的RF电源。该装置被预设为通过微波将处理室中供应的含氮气体和含硅气体转化为等离子体，并且通过使用等离子体将氮化硅膜沉积在目标衬底的表面上，同时施加 RF工作台的功率。

16. 发明申请

US20100283097A1 MOS SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译： MOS半导体存储器件
公开(公告)号：US20100283097A1
公开(公告)日：2010-11-11
申请号：US12665534
申请日：2008-06-20
申请人： Tetsuo Endoh , Masayuki Kohno , Tatsuo Nishita , Minoru Honda , Toshio Nakanishi , Yoshihiro Hirota
发明人： Tetsuo Endoh , Masayuki Kohno , Tatsuo Nishita , Minoru Honda , Toshio Nakanishi , Yoshihiro Hirota
IPC分类号： H01L27/115 , H01L29/792
CPC分类号： H01L29/792 , C23C16/308 , C23C16/345 , G11C11/5628 , G11C16/0466 , H01L27/11568 , H01L27/11578 , H01L27/11582 , H01L29/4234 , H01L29/513 , H01L29/7926
摘要： The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory device 601 includes a first insulating film 111 and fifth insulating film 115 having large bandgaps 111a and 115a, a third insulating film 113 having the smallest bandgap 113a, and a second insulating film 112 and fourth insulating film 114 interposed between the third insulating film 113 and the first and fifth insulating films 111 and 115, respectively, and having intermediate bandgaps 112a and 114a.
摘要翻译：本发明提供一种实现优异的数据保持特性的MOS半导体存储器件，同时还实现了高速数据写入性能，低功率操作性能和高可靠性。 MOS半导体存储器件601包括具有较大带隙111a和115a的第一绝缘膜111和第五绝缘膜115，具有最小带隙113a的第三绝缘膜113和介于第三绝缘膜113之间的第二绝缘膜112和第四绝缘膜114。绝缘膜113和第一和第五绝缘膜111和115，并具有中间带隙112a和114a。

17. 发明申请

US20100052040A1 METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PLASMA APPARATUS 失效
标题翻译：形成硅氮化膜的方法，制造非易失性半导体存储器件的方法，非易失性半导体存储器件和等离子体设备
公开(公告)号：US20100052040A1
公开(公告)日：2010-03-04
申请号：US12532743
申请日：2008-03-25
申请人： Masayuki Kohno , Tatsuo Nishita , Toshio Nakanishi , Yoshihiro Hirota
发明人： Masayuki Kohno , Tatsuo Nishita , Toshio Nakanishi , Yoshihiro Hirota
IPC分类号： H01L29/792 , C23C16/54 , H01L21/31
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/511 , H01L21/28282 , H01L29/792
摘要： A Plasma processing apparatus (100) introduces microwaves into a chamber (1) by a plane antenna (31) which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber (1) by using the plasma processing apparatus, and plasma is generated by the microwaves. Then, a silicon nitride film is deposited by the plasma on a surface of an object to be processed. The trap density of the silicon nitride film is controlled by adjusting the conditions of the plasma CVD process.
摘要翻译：等离子体处理装置（100）通过具有多个孔的平面天线（31）将微波引入室（1）。通过使用等离子体处理装置将含有氮化合物和含硅化合物的原料气体引入室（1），由微波产生等离子体。然后，通过等离子体将氮化硅膜沉积在待处理物体的表面上。通过调整等离子体CVD工艺的条件来控制氮化硅膜的陷阱密度。

18. 发明申请

US20090203228A1 PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA CVD METHOD 有权
标题翻译：等离子体CVD法，形成氮化硅膜的方法，制造半导体器件的方法和等离子体CVD方法
公开(公告)号：US20090203228A1
公开(公告)日：2009-08-13
申请号：US12302614
申请日：2007-03-30
申请人： Masayuki Kohno , Tatsuo Nishita , Toshio Nakanishi
发明人： Masayuki Kohno , Tatsuo Nishita , Toshio Nakanishi
IPC分类号： H01L21/471 , B05C11/10
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/511 , H01L21/0217 , H01L21/02211 , H01L21/3185 , H01L27/115 , H01L29/40114 , H01L29/7843
摘要： A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave generation source configured to generate microwaves; a planar antenna including a plurality of slots and configured to supply microwaves generated by the microwave generation source through the slots into the process chamber; a gas supply mechanism configured to supply a film formation source gas into the process chamber; and an RF power supply configured to apply an RF power to the worktable. The apparatus is preset to turn a nitrogen-containing gas and a silicon-containing gas supplied in the process chamber into plasma by the microwaves, and to deposit a silicon nitride film on a surface of the target substrate by use of the plasma, while applying the RF power to the worktable.
摘要翻译：一种等离子体处理装置，包括被构造为真空排出的处理室; 工作台，其配置成将目标衬底放置在所述处理室内; 构造成产生微波的微波产生源; 平面天线，包括多个槽，并被配置为将微波产生源产生的微波通过所述槽提供到所述处理室中; 气体供给机构，其构造成将成膜源气体供给到所述处理室中; 以及被配置为向所述工作台施加RF功率的RF电源。该装置被预设为通过微波将处理室中供应的含氮气体和含硅气体转化为等离子体，并且通过使用等离子体将氮化硅膜沉积在目标衬底的表面上，同时施加 RF工作台的功率。

19. 发明授权

US08258571B2 MOS semiconductor memory device having charge storage region formed from stack of insulating films 有权
标题翻译：具有由堆叠的绝缘膜形成的电荷存储区域的MOS半导体存储器件
公开(公告)号：US08258571B2
公开(公告)日：2012-09-04
申请号：US12665534
申请日：2008-06-20
申请人： Tetsuo Endoh , Masayuki Kohno , Tatsuo Nishita , Minoru Honda , Toshio Nakanishi , Yoshihiro Hirota
发明人： Tetsuo Endoh , Masayuki Kohno , Tatsuo Nishita , Minoru Honda , Toshio Nakanishi , Yoshihiro Hirota
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , C23C16/308 , C23C16/345 , G11C11/5628 , G11C16/0466 , H01L27/11568 , H01L27/11578 , H01L27/11582 , H01L29/4234 , H01L29/513 , H01L29/7926
摘要： The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory device 601 includes a first insulating film 111 and fifth insulating film 115 having large bandgaps 111a and 115a, a third insulating film 113 having the smallest bandgap 113a, and a second insulating film 112 and fourth insulating film 114 interposed between the third insulating film 113 and the first and fifth insulating films 111 and 115, respectively, and having intermediate bandgaps 112a and 114a.
摘要翻译：本发明提供一种实现优异的数据保持特性的MOS半导体存储器件，同时还实现了高速数据写入性能，低功率操作性能和高可靠性。 MOS半导体存储器件601包括具有较大带隙111a和115a的第一绝缘膜111和第五绝缘膜115，具有最小带隙113a的第三绝缘膜113和介于第三绝缘膜113之间的第二绝缘膜112和第四绝缘膜114。绝缘膜113和第一和第五绝缘膜111和115，并具有中间带隙112a和114a。

20. 发明申请

US20110086517A1 PROCESS FOR PRODUCING SILICON NITRIDE FILM, PROCESS FOR PRODUCING SILICON NITRIDE FILM LAMINATE, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE 失效
标题翻译：用于生产氮化硅膜的方法，用于生产氮化硅薄膜层压体的方法，计算机可读存储介质和等离子体CVD装置
公开(公告)号：US20110086517A1
公开(公告)日：2011-04-14
申请号：US12935138
申请日：2009-03-30
申请人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Tatsuo Nishita , Junya Miyahara
发明人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Tatsuo Nishita , Junya Miyahara
IPC分类号： H01L21/318 , B05C11/00
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/511 , H01J37/32192 , H01J2237/3321 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282
摘要： Disclosed is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV.
摘要翻译：公开了一种等离子体CVD装置。在等离子体CVD装置中，在通过CVD控制带隙尺寸的同时制造氮化硅膜时，通过具有多个孔的平坦天线将微波引入处理容器。等离子体CVD是在含硅化合物气体和氮气（含硅化合物气体流量（含硅化合物气体流量））的选定压力范围为0.1Pa以上且1333Pa以下的给定处理压力下进行的速率/氮气流量），由此控制膜中的Si / N比，形成带隙尺寸不小于2.5eV的氮化硅膜不超过7 eV。

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