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11. 发明授权

US5416790A Semiconductor laser with a self-sustained pulsation 失效
标题翻译：具有自持脉冲的半导体激光器
公开(公告)号：US5416790A
公开(公告)日：1995-05-16
申请号：US147779
申请日：1993-11-04
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
IPC分类号： H01S5/065 , H01S5/20 , H01S5/223 , H01S5/32 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译：公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层类型。第一和第二覆层具有比有源层更大的折射率和更大的带隙。在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

12. 发明授权

US07750551B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07750551B2
公开(公告)日：2010-07-06
申请号：US11524256
申请日：2006-09-21
申请人： Shingo Kameyama , Takenori Goto , Tatsuya Kunisato
发明人： Shingo Kameyama , Takenori Goto , Tatsuya Kunisato
IPC分类号： H01J1/62
CPC分类号： H01L33/508 , H01L33/44 , H01L33/54 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.
摘要翻译：发光装置包括安装在基座上的发光元件; 含有荧光体的透明树脂部分，其包含用于吸收从发光元件发射的光并用于发射具有与吸收的光的波长不同的波长的光的荧光体，并且在包含安装在基底和用其覆盖的发光元件; 以及高浓度荧光体树脂层，其形成在发光元件的正上方，并且具有高于含有荧光体的透明树脂的荧光体浓度。

13. 发明申请

US20070228923A1 Illumination device and manufacturing method thereof 有权
标题翻译：照明装置及其制造方法
公开(公告)号：US20070228923A1
公开(公告)日：2007-10-04
申请号：US11710405
申请日：2007-02-26
申请人： Seiichi Tokunaga , Tatsuya Kunisato , Takenori Goto , Masayuki Hata
发明人： Seiichi Tokunaga , Tatsuya Kunisato , Takenori Goto , Masayuki Hata
IPC分类号： H01J1/62 , H01J9/02
CPC分类号： F21S8/00 , F21Y2105/10 , F21Y2105/12 , F21Y2113/13 , F21Y2115/10
摘要： Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.
摘要翻译：照明装置具有多个发光单元，每个具有设置在发光元件的发光侧的发光元件和第一荧光体区域。在各发光单元的发光侧设置有多个第二荧光体区域。在多个发光单元中具有相同发光特性的至少一个发光单元的发光侧分别设置具有相同发光转换特性的第二荧光材料区域。

14. 发明申请

US20070069633A1 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20070069633A1
公开(公告)日：2007-03-29
申请号：US11524256
申请日：2006-09-21
申请人： Shingo Kameyama , Takenori Goto , Tatsuya Kunisato
发明人： Shingo Kameyama , Takenori Goto , Tatsuya Kunisato
IPC分类号： H01J1/62
CPC分类号： H01L33/508 , H01L33/44 , H01L33/54 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.
摘要翻译：发光装置包括安装在基座上的发光元件; 含有荧光体的透明树脂部分，其包含用于吸收从发光元件发射的光并用于发射具有与吸收的光的波长不同的波长的光的荧光体，并且在包含安装在基底和用其覆盖的发光元件; 以及高浓度荧光体树脂层，其形成在发光元件的正上方，并且具有高于含有荧光体的透明树脂的荧光体浓度。

15. 发明授权

US07120181B1 Semiconductor laser device and method of fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07120181B1
公开(公告)日：2006-10-10
申请号：US09532786
申请日：2000-03-22
申请人： Nobuhiko Hayashi , Takenori Goto
发明人： Nobuhiko Hayashi , Takenori Goto
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/065 , H01S5/0658 , H01S5/2219 , H01S5/223 , H01S5/34333
摘要： In a semiconductor laser device, an AlGaN buffer layer, a GaN layer, an n-GaN layer, an n-AlGaN cladding layer, an MQW light emitting layer, a p-AlGaN cladding layer, a p-first GaN cap layer, a current blocking layer composed of n-AlGaN, and a p-second GaN cap layer are stacked in this order on a sapphire substrate, and a ridge portion having an upper surface having a width W1 is formed by etching. The current blocking layer has an opening having a width W2 on the upper surface of the ridge portion. The width W2 of the opening is smaller than the width W1 of the upper surface of the ridge portion. Accordingly, in a light emitting region of the MQW light emitting layer, a saturable light absorbing region is formed on both sides of a current injection region.
摘要翻译：在半导体激光器件中，AlGaN缓冲层，GaN层，n-GaN层，n-AlGaN包覆层，MQW发光层，p-AlGaN包覆层，p第一GaN覆盖层，由n-AlGaN构成的电流阻挡层和p-second GaN覆盖层依次层叠在蓝宝石基板上，具有宽度W 1 1的上表面的脊部由蚀刻。电流阻挡层在脊部的上表面上具有宽度W 2 2的开口。开口的宽度W 2 2小于脊部的上表面的宽度W 1 1 <1>。因此，在MQW发光层的发光区域中，在电流注入区域的两侧形成有可饱和的光吸收区域。

16. 发明授权

US06339563B2 Optical pickup apparatus capable of suppressing offset of a tracking error signal 失效
标题翻译：能够抑制跟踪误差信号偏移的光拾取装置
公开(公告)号：US06339563B2
公开(公告)日：2002-01-15
申请号：US09725239
申请日：2000-11-29
申请人： Kazushi Mori , Atsushi Tajiri , Yasuaki Inoue , Takenori Goto , Minoru Sawada , Akira Ibaraki , Daisuke Ide
发明人： Kazushi Mori , Atsushi Tajiri , Yasuaki Inoue , Takenori Goto , Minoru Sawada , Akira Ibaraki , Daisuke Ide
IPC分类号： G11B7095
CPC分类号： G11B7/1353 , G11B7/0903 , G11B7/094
摘要： A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in ±1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by ±1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the +1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the −1st direction, entering the objective lens.
摘要翻译：衍射光栅的光栅表面衍射从半导体激光器件发射的激光束的±1级方向。光栅表面形成为矩形或椭圆形，其尺寸使得物镜上形成的±1阶衍射光束的光点位于物镜的孔径中，即使物镜为在跟踪操作中水平移动。另一个衍射光栅的光栅表面的宽度小于衍射光栅上与光束的一部分相对应的光点的重叠区域的宽度，该光束的一部分在+ 1方向衍射，进入物镜和光点衍射光栅对应于在第一方向衍射的光束的一部分，进入物镜。

17. 发明授权

US08471289B2 Semiconductor laser device, optical pickup device and semiconductor device 有权
标题翻译：半导体激光器件，光学拾取器件和半导体器件
公开(公告)号：US08471289B2
公开(公告)日：2013-06-25
申请号：US12980023
申请日：2010-12-28
申请人： Yoshio Okayama , Yasunori Inoue , Takenori Goto , Kazushi Mori , Yuuki Ota , Naoteru Matsubara
发明人： Yoshio Okayama , Yasunori Inoue , Takenori Goto , Kazushi Mori , Yuuki Ota , Naoteru Matsubara
IPC分类号： H01L33/00
CPC分类号： H01S5/02208 , B82Y20/00 , H01L24/97 , H01L2224/45144 , H01L2224/48091 , H01L2224/49175 , H01L2224/73265 , H01L2924/12043 , H01L2924/1461 , H01L2924/15788 , H01L2924/16195 , H01S5/0222 , H01S5/0224 , H01S5/02248 , H01S5/02276 , H01S5/02292 , H01S5/0683 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser device includes a Si(100) substrate in which a recess having an opening and a bottom face surrounded by inner wall surfaces is formed, a semiconductor laser element placed on the bottom face, and a translucent sealing glass, mounted on top of the Si(100) substrate, which seals the opening. The laser light emitted from the semiconductor laser element is reflected by a metallic reflective film formed on the inner wall surface and then transmits through the sealing glass so as to be emitted externally.
摘要翻译：一种半导体激光器件包括：Si（100）衬底，其中形成具有由内壁表面包围的开口和底面的凹部，放置在底面上的半导体激光元件和安装在底面上的半透明密封玻璃 Si（100）衬底，其密封开口。从半导体激光元件发出的激光由形成在内壁面上的金属反射膜反射，然后通过密封玻璃透射从外部发射。

18. 发明申请

US20120033695A1 SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS 审中-公开
标题翻译：半导体激光装置和光学装置
公开(公告)号：US20120033695A1
公开(公告)日：2012-02-09
申请号：US13191683
申请日：2011-07-27
申请人： Nobuhiko HAYASHI , Hideki YOSHIKAWA , Keiichi KURAMOTO , Takenori GOTO , Yoshio OKAYAMA , Seiichi TOKUNAGA
发明人： Nobuhiko HAYASHI , Hideki YOSHIKAWA , Keiichi KURAMOTO , Takenori GOTO , Yoshio OKAYAMA , Seiichi TOKUNAGA
IPC分类号： H01S5/022
CPC分类号： H01S5/02204 , H01L2224/48091 , H01L2224/48247 , H01S5/02212 , H01S5/02216 , H01S5/02244 , H01S5/02296 , H01S5/0683 , H01S5/32341 , H01L2924/00014
摘要： This semiconductor laser apparatus includes a package constituted by a plurality of members, having sealed space inside and a semiconductor laser chip arranged in the sealed space, while surfaces of the members located in the sealed space are covered with a covering agent made of an ethylene-polyvinyl alcohol copolymer.
摘要翻译：该半导体激光装置包括由内部具有密封空间的多个构件和布置在密封空间中的半导体激光器芯片构成的封装，同时位于密封空间中的构件的表面被覆盖有由乙烯 - 聚乙烯醇共聚物。

19. 发明申请

US20110280266A1 SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS 审中-公开
标题翻译：半导体激光装置，制造半导体激光装置和光学装置的方法
公开(公告)号：US20110280266A1
公开(公告)日：2011-11-17
申请号：US13106123
申请日：2011-05-12
申请人： Nobuhiko HAYASHI , Hideki YOSHIKAWA , Keiichi KURAMOTO , Yasuhiko NOMURA , Takenori GOTO , Yoshio OKAYAMA , Seiichi TOKUNAGA
发明人： Nobuhiko HAYASHI , Hideki YOSHIKAWA , Keiichi KURAMOTO , Yasuhiko NOMURA , Takenori GOTO , Yoshio OKAYAMA , Seiichi TOKUNAGA
IPC分类号： H01S5/022 , H01L21/52
CPC分类号： H01S5/02216 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/16195 , H01S5/02212 , H01S5/0222 , H01S5/02228 , H01S5/02244 , H01S5/02292 , H01S5/02296 , H01S5/02469 , H01S5/0683 , H01L2924/00014
摘要： This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package has a base portion mounted with the semiconductor laser chip, a sealing member and a window member. The semiconductor laser chip is sealed with the base portion, the sealing member and the window member. At least two of the base portion, the sealing member and the window member are bonded to each other through a sealant made of an ethylene-polyvinyl alcohol copolymer.
摘要翻译：该半导体激光装置包括半导体激光芯片和密封半导体激光芯片的封装。封装具有安装有半导体激光芯片的基座部分，密封构件和窗构件。半导体激光芯片由基部，密封部件和窗部件密封。基部，密封构件和窗构件中的至少两个通过由乙烯 - 聚乙烯醇共聚物制成的密封剂彼此接合。

20. 发明申请

US20080225920A1 SEMICONDUCTOR LASER DIODE APPARATUS AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体激光二极管装置及其制造方法
公开(公告)号：US20080225920A1
公开(公告)日：2008-09-18
申请号：US12047924
申请日：2008-03-13
申请人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
发明人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
IPC分类号： H01S5/02 , H01L21/02
CPC分类号： H01S5/0207 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22 , H01S5/3201 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.
摘要翻译：获得能够抑制从半导体激光二极管元件发射的激光束的发射位置和发射方向的变化的半导体激光二极管装置。该半导体激光二极管装置包括：半导体激光二极管元件，其具有沿着与第一方向相交的第一方向或与第一方向交叉的第二方向的翘曲;以及半导体激光二极管元件的翘曲的凸侧固定，其中所述半导体激光二极管元件的第一端之间沿所述第一和第二方向之间的较大翘曲的方向与所述基座之间的距离小于所述半导体激光二极管元件的第二端之间的距离，第一和第二个方向和基地之间大的扭曲。

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