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11. 发明申请

US20090035334A1 METHOD FOR PREPARING POLYMETHYLMETHACRYLATE SPHERICAL BEAD 审中-公开
标题翻译：制备聚甲基丙烯酸甲酯球形珠的方法
公开(公告)号：US20090035334A1
公开(公告)日：2009-02-05
申请号：US11817633
申请日：2005-08-26
申请人： Sun-jae Kim , Hyoung-whee Kim , Suk-woo Shin , Han-song Chu
发明人： Sun-jae Kim , Hyoung-whee Kim , Suk-woo Shin , Han-song Chu
IPC分类号： A61K8/02 , C08F2/00
CPC分类号： C08F120/14 , A61K8/025 , A61K8/8152 , A61Q19/00 , C08F220/14 , C08F222/1006 , C08J3/12 , C08J2333/12
摘要： This invention provides a method for preparing a polymethylmethacrylate spherical bead and in particular, it provides a method for preparing a polymethylmethacrylate spherical bead characterized in that it is prepared by preparing polymethylmethacrylate by polymerizing methyl-methacrylate monomers, evaporating remaining methylmethacrylate monomers by raising temperature up to at least 100° C. after the polymerization reaction, and washing the polymethylmethacrylate with a mixed solvent of ethanol and water and vacuum drying them. The polymethylmethacrylate spherical beads in accordance with the invention not only can provide pure polymethylmethacrylate in its odorless condition by completely eliminating the remaining methylmethacrylate monomers that generate off-odor but also show no yellowing and at the same time, they are suitable for cosmetic materials or industrial materials because they are harmless to human and have no off-odor
摘要翻译：本发明提供一种制备聚甲基丙烯酸甲酯球形珠粒的方法，特别是提供一种制备聚甲基丙烯酸甲酯球形珠粒的方法，其特征在于其通过聚合甲基丙烯酸甲酯单体制备聚甲基丙烯酸甲酯，通过升高温度蒸发剩余的甲基丙烯酸甲酯单体在聚合反应后至少100℃，用乙醇和水的混合溶剂洗涤聚甲基丙烯酸甲酯并真空干燥。根据本发明的聚甲基丙烯酸甲酯球形珠不仅可以通过完全消除残留的产生异味的甲基丙烯酸甲酯单体，而且不发黄，同时可以提供纯的聚甲基丙烯酸甲酯无味，同时它们适用于化妆品或工业材料，因为它们对人体无害，没有异味

12. 发明授权

US06325966B1 Zirconium alloy having high corrosion resistance and high strength 有权
标题翻译：锆合金具有高耐腐蚀性和高强度
公开(公告)号：US06325966B1
公开(公告)日：2001-12-04
申请号：US09293099
申请日：1999-04-16
申请人： Yong Hwan Jeong , Jong Hyuk Baek , Kyeong Ho Kim , Sun-Jae Kim , Byong Kwon Choi , Youn Ho Jung
发明人： Yong Hwan Jeong , Jong Hyuk Baek , Kyeong Ho Kim , Sun-Jae Kim , Byong Kwon Choi , Youn Ho Jung
IPC分类号： C22C1600
摘要： The invention presented herein relates to a zirconium alloy with superior corrosion resistance and high strength for use in fuel rod claddings, spacer grids and structural components in reactor core of light water and heavy water nuclear power plant. The zirconium alloy of this invention with superior corrosion resistance and high strength comprises an alloy composition as follows: niobium in a range of 0.15 to 0.25 wt. %; tin in a range of 1.10 to 1.40 wt. %; iron in a range of 0.35 to 0.45; chromium in a range of 0.15 to 0.25; one element selected from the group consisting of molybdenum, copper and manganese in a range of 0.08 to 0.12 wt. %; oxygen in a range of 0.10 to 0.14 wt. %; and the balance being zirconium.
摘要翻译：本文提出的本发明涉及一种具有优良耐腐蚀性和高强度的锆合金，用于轻水和重水核电厂反应堆堆芯中的燃料棒包层，间隔栅格和结构部件。本发明的锆合金具有优异的腐蚀性电阻和高强度包括如下的合金组成：铌在0.15至0.25wt。％; 锡在1.10至1.40重量％的范围内。％; 铁在0.35至0.45的范围内; 在0.15至0.25的范围内的铬; 一种元素选自钼，铜和锰，其含量范围为0.08至0.12wt。％; 0.10〜0.14重量％的氧。％; 余量为锆。

13. 发明授权

US09202742B1 Integrated circuit packaging system with pattern-through-mold and method of manufacture thereof 有权
标题翻译：集成电路封装系统及其制造方法
公开(公告)号：US09202742B1
公开(公告)日：2015-12-01
申请号：US14156271
申请日：2014-01-15
申请人： Woo Jin Kim , Sun Jae Kim , Chung Lyul Ahn , Hyeon Yi Kang
发明人： Woo Jin Kim , Sun Jae Kim , Chung Lyul Ahn , Hyeon Yi Kang
IPC分类号： H01L21/768 , H01L23/522 , H01L21/56 , H01L23/31 , H01L21/52 , H01L23/12 , H01L23/16
CPC分类号： H01L23/49827 , H01L21/52 , H01L21/56 , H01L21/563 , H01L23/12 , H01L23/16 , H01L23/3121 , H01L23/3128 , H01L23/3135 , H01L23/3157 , H01L23/49816 , H01L23/49838 , H01L23/5389 , H01L2224/16225 , H01L2225/06548 , H01L2924/15311 , H01L2924/181 , H01L2924/19105 , H01L2924/00012
摘要： An integrated circuit packaging system, and a method of manufacture thereof, including: a substrate; a device attached on a top surface of the substrate; a mold encapsulating the device, the mold having a through via and a recessed pattern characterized by being formed in a single process; and a conductive via in the through via and a conductive pattern in the recessed pattern characterized by being formed in another single process.
摘要翻译：一种集成电路封装系统及其制造方法，包括：基板; 附着在所述基板的顶表面上的装置; 封装所述装置的模具，所述模具具有通孔和凹陷图案，其特征在于以单一工艺形成; 以及通孔中的导电通孔和凹陷图案中的导电图案，其特征在于在另一个单一工艺中形成。

14. 发明申请

US20130089972A1 METHOD FOR FORMING NANOCRYSTALLINE SILICON FILM 审中-公开
标题翻译：形成纳米晶硅膜的方法
公开(公告)号：US20130089972A1
公开(公告)日：2013-04-11
申请号：US13253616
申请日：2011-10-05
申请人： Min Koo Han , Sun Jae Kim
发明人： Min Koo Han , Sun Jae Kim
IPC分类号： H01L21/20
CPC分类号： C23C16/24 , C23C16/0245 , C30B25/105 , C30B29/06 , C30B29/605 , H01L21/02381 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02658
摘要： Provided is a method for forming a nanocrystalline silicon film that can be deposited on a substrate while maintaining a high degree of crystallinity at low temperatures. The method includes performing plasma treatment on a substrate, and forming a nanocrystalline silicon film by depositing the nanocrystalline silicon film on the substrate.
摘要翻译：本发明提供一种能够在低温下保持高结晶度的同时沉积在基板上的纳米晶硅膜的形成方法。该方法包括对衬底进行等离子体处理，并通过在衬底上沉积纳米晶硅膜形成纳米晶硅膜。

15. 发明申请

US20130075731A1 MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURED BY THEM 审中-公开
标题翻译：薄膜晶体管及其制造的薄膜晶体管的制造方法
公开(公告)号：US20130075731A1
公开(公告)日：2013-03-28
申请号：US13311698
申请日：2011-12-06
申请人： Min Koo Han , Sun Jae Kim
发明人： Min Koo Han , Sun Jae Kim
IPC分类号： H01L21/336 , H01L29/786 , H01L29/04
CPC分类号： H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： Provided are a manufacturing method for a thin film transistor, and a thin film transistor manufactured by the manufacturing method. In the manufacturing method, a semiconductor layer and an insulating layer for stopping etching, which are sequentially stacked, are etched by dry etching and wet etching using a single photoresist pattern, and patterning the semiconductor layer and the insulating layer into a channel layer and an etch stop layer, respectively, thereby simplifying the manufacturing process of the thin film transistor.
摘要翻译：提供了一种薄膜晶体管的制造方法和通过该制造方法制造的薄膜晶体管。在制造方法中，通过使用单一光致抗蚀剂图案的干蚀刻和湿蚀刻来蚀刻依次层叠的半导体层和用于停止蚀刻的绝缘层，并将半导体层和绝缘层图案化为沟道层和蚀刻停止层，从而简化了薄膜晶体管的制造工艺。

16. 发明授权

US08178877B2 Thin film transistor and method for fabricating thin film transistor 有权
标题翻译：薄膜晶体管及制造薄膜晶体管的方法
公开(公告)号：US08178877B2
公开(公告)日：2012-05-15
申请号：US12794062
申请日：2010-06-04
申请人： Sun Jae Kim , Min Koo Han
发明人： Sun Jae Kim , Min Koo Han
IPC分类号： H01L29/786 , H01L21/86
CPC分类号： H01L29/78627 , H01L29/42384 , H01L29/66757 , Y10S977/70
摘要： Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask.
摘要翻译：公开了具有高可靠性并提供简化的制造工艺的薄膜晶体管，以及制造薄膜晶体管的方法。在该方法中，制备电介质基板，在电介质基板上形成半导体层，在半导体层上形成栅极绝缘膜，在栅极电介质膜上形成第一栅电极，形成第一栅电极的壁，并且使用第一栅电极作为掩模将杂质注入到半导体层中。

17. 发明申请

US20170211916A1 BULLET COLLECTING BOX CAPABLE OF STACKING AND INSTALLING, AND BULLET COLLECTING SYSTEM FOR PREVENTING OCCURRENCE OF LEAD FUME IN INDOOR SHOOTING RANGE USING THE BULLET COLLECTING BOX 审中-公开
公开(公告)号：US20170211916A1
公开(公告)日：2017-07-27
申请号：US15163911
申请日：2016-05-25
申请人： Hee Joung KIM , Min A KANG , Sun Jae KIM , Sun Gu KIM
发明人： Hee Joung KIM , Min A KANG , Sun Jae KIM , Sun Gu KIM
IPC分类号： F41J13/02
CPC分类号： F41J13/02 , F41J11/00 , F41J13/00
摘要： The present invention provides a bullet collecting box which is installed with a plurality of rubber plates in the bullet collecting box having a rectangular parallelepiped shape and filled with rubber powder filling materials having a particle size of 0.1 to 3 mm therein, thereby collecting the bullets fired in the indoor shooting range without damage, and a bullet collecting system which can be used by installing the bullet collecting box in the indoor shooting range. Also, the present invention provides a bullet collecting system for preventing occurrence of lead fume in the indoor shooting range, in which the beaten zone of the indoor shooting range is newly improved from an existing system of using an iron plate to a system of using powder filling materials, thereby preventing the leakage of lead fume, and contributing to an early normalization of the shooting range and a creative national defense.

18. 发明申请

US20080197413A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20080197413A1
公开(公告)日：2008-08-21
申请号：US12032007
申请日：2008-02-15
申请人： Ji-sim Jung , Myung-kwan Ryu , Jang-yeon Kwon , Kyung-bae Park , Min-koo Han , Sang-yoon Lee , Joong-hyun Park , Sang-myeon Han , Sun-jae Kim
发明人： Ji-sim Jung , Myung-kwan Ryu , Jang-yeon Kwon , Kyung-bae Park , Min-koo Han , Sang-yoon Lee , Joong-hyun Park , Sang-myeon Han , Sun-jae Kim
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78621 , H01L29/42384 , H01L2029/7863
摘要： Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.
摘要翻译：提供一种薄膜晶体管及其制造方法。薄膜晶体管包括：下部结构; 半导体层，形成在所述下部结构上并且包括多个掺杂区域; 形成在所述半导体层上并分离的第一绝缘层和第二绝缘层; 形成在所述第一绝缘层和所述第二绝缘层上的第三绝缘层; 以及在第三绝缘层的分别对应于第一绝缘层和第二绝缘层的区域之间形成的栅极电极层。

19. 发明授权

US5972288A Composition of zirconium alloy having high corrosion resistance and high strength 失效
标题翻译：具有高耐腐蚀性和高强度的锆合金组成
公开(公告)号：US5972288A
公开(公告)日：1999-10-26
申请号：US96659
申请日：1998-06-12
申请人： Yong Hwan Jeong , Jong Hyuk Baek , Byong Kwon Choi , Kyeong Ho Kim , Sun Jae Kim , Youn Ho Jung , Il Hiun Kuk
发明人： Yong Hwan Jeong , Jong Hyuk Baek , Byong Kwon Choi , Kyeong Ho Kim , Sun Jae Kim , Youn Ho Jung , Il Hiun Kuk
IPC分类号： C22C16/00
CPC分类号： C22C16/00
摘要： The invention presented herein relates to a zirconium alloy with superior corrosion resistance and high strength for use in fuel rod claddings, spacer grids and structural components as used in reactor core of light water and heavy water nuclear power plant. The zirconium alloy of this invention with superior corrosion resistance and high strength comprises an alloy composition as follows:niobium(Nb), in a range of 0.05 to 0.3 wt. %;tin(Sn), in a range of 0.8 to 1.6 wt. %;iron(Fe), in a range of 0.2 to 0.4 wt. %;a selected one from the group consisted of vanadium(V), tellurium(Te), antimony(Sb), molybdenum(Mo), tantalum(Ta), and copper(Cu), in a range of 0.05 to 0.20 wt. %;oxygen(O), in a range of 600 to 1400 ppm; andthe balance being zirconium(Zr).
摘要翻译：本发明涉及一种具有优良耐腐蚀性和高强度的锆合金，用于轻水和重水核电厂的反应堆堆芯中所用的燃料棒包层，间隔栅格和结构部件。具有优异的耐腐蚀性和高强度的本发明的锆合金包括如下的合金组成：铌（Nb）在0.05至0.3重量％的范围内。％; 锡（Sn）的范围为0.8〜1.6重量％。％; 铁（Fe），在0.2〜0.4重量％的范围内。％; 选自钒（V），碲（Te），锑（Sb），钼（Mo），钽（Ta）和铜（Cu）组成的组中的一种。％; 氧（O），在600〜1400ppm的范围内; 余量为锆（Zr）。

20. 发明授权

US5650129A Light weight silica balls with a dense outer layer and method of making the same 失效
标题翻译：具有致密外层的轻质二氧化硅球及其制造方法
公开(公告)号：US5650129A
公开(公告)日：1997-07-22
申请号：US587564
申请日：1996-01-17
申请人： Thae-Khapp Kang , Seok-Jin Oh , Sun-Jae Kim , Choong-Hwan Jung , Il-Hyun Kuk
发明人： Thae-Khapp Kang , Seok-Jin Oh , Sun-Jae Kim , Choong-Hwan Jung , Il-Hyun Kuk
IPC分类号： C04B14/06 , C04B35/14 , C01B33/12
CPC分类号： C04B14/06 , C04B35/14
摘要： The present invention provides silica balls in a spherical shape, the silica balls having a porous internal structure and a dense outside layer.
摘要翻译：本发明提供球形的二氧化硅球，二氧化硅球具有多孔内部结构和致密的外层。

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