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    • 13. 发明申请
    • CONTINUOUS COATING INSTALLATION, METHODS FOR PRODUCING CRYSTALLINE THIN FILMS AND SOLAR CELLS, AND SOLLAR CELL
    • 连续涂层安装,生产结晶薄膜和太阳能电池的方法和SOLARAR CELL
    • WO2008104346A2
    • 2008-09-04
    • PCT/EP2008001465
    • 2008-02-25
    • ZEISS CARL LASER OPTICS GMBHZEISS CARL SMT AGSHAH ARVINDSCHADE HORSTMUENZ HOLGERVOELCKER MARTINSCHALL MICHAELKRANTZ MATTHIAS
    • SHAH ARVINDSCHADE HORSTMUENZ HOLGERVOELCKER MARTINSCHALL MICHAELKRANTZ MATTHIAS
    • H01L31/18
    • H01L31/1824C23C14/18C23C14/30C23C14/562C23C14/5813H01L31/076H01L31/1872H01L31/206Y02E10/545Y02E10/548Y02P70/521
    • The invention relates to a continuous coating installation (100) comprising a vacuum chamber (110) having a supply opening (102) for supplying a substrate (106) to be coated and a discharge opening (101) for discharging the coated substrate (106), a physical vapour deposition device (112) for coating a surface (126) of the substrate (106), a laser crystallization system (122) for simultaneously illuminating at least one sub-partial area (132) of a currently coated partial area (130) of the surface (126) of the substrate (106) with at least one laser beam (124), comprising a transport device (108) for transporting the substrate (106) in a feedthrough direction (136) from the supply opening (102) to the discharge opening (104) and for continuously or discontinuously moving the substrate (106) during the coating thereof in the feedthrough direction (136). The invention furthermore relates to a method for producing nano-, micro-, poly-, multi- or monocrystalline thin films comprising the following method steps: a) supplying a substrate (106) to be coated into a vacuum chamber (110) in a feedthrough direction (136), b) physical vapour deposition of a layer onto a partial area (130) of a surface (126) of the substrate (106) and simultaneous laser crystallization of at least one sub-partial area (132) of the currently coated partial area (130) of the surface (126) of the substrate (106) by means of at least one laser beam (124) whilst continuously or discontinuously moving the substrate (106) in the feedthrough direction (136), c) discharging the coated substrate (106) from the vacuum chamber (110) in the feedthrough direction (136). The invention further relates to a method for producing a silicon tandem solar cell comprising at least one solar cell based on amorphous silicon and at least one solar cell based on crystalline silicon, which are arranged monolithically one above another, comprising the following method steps : A) providing or producing the solar cell based on amorphous silicon on a transparent substrate, B) producing the solar cell based on crystalline silicon, comprising the following method substeps: aa) providing or depositing a p-doped or, in an alternative embodiment, n-doped optionally amorphous or crystalline silicon layer, bb) optionally depositing a seed layer composed of intrinsic crystalline silicon, cc) depositing an amorphous silicon layer with the aid of a physical vapour process, dd) crystallising the amorphous silicon layer produced with the aid of the physical vapour process with the aid of a laser crystallization process, ee) optionally multiply repeating method substeps cc) and dd), ff) optionally depositing or providing an n-doped silicon layer or, in the alternative embodiment, p-doped optionally amorphous or crystalline silicon layer, gg) optionally crystallising the amorphous p-doped or, in the alternative embodiment, n-doped silicon layer by means of a laser crystallization process, hh) depositing a conductive contact. Finally, the invention relates to a tandem solar cell comprising at least one solar cell based on amorphous silicon and at least one solar cell based on crystalline silicon, which are arranged monolithically one above another, wherein the solar cell based on crystalline silicon has a silicon layer, characterized in that the silicon layer has crystallites having grain diameters of between 20 nm and 5 µm.
    • 本发明涉及一种包括真空室(110)的连续涂层装置(100),该真空室具有用于供应待涂覆的基底(106)的供应开口(102)和用于排出涂覆的基底(106)的排放口(101) ,用于涂覆所述基底(106)的表面(126)的物理气相沉积装置(112),激光结晶系统(122),用于同时照射当前涂覆的部分区域的至少一个次部分区域(132) 具有至少一个激光束(124)的衬底(106)的表面(126)(130),包括用于沿馈送方向(136)从供给开口(136)输送衬底(106)的输送装置(108) 102)连接到排出口(104),并且用于在其穿过方向(136)的涂覆期间连续或不连续地移动衬底(106)。 本发明还涉及一种用于制造纳米,微米,多晶,多晶或单晶薄膜的方法,包括以下方法步骤:a)将待涂覆的基底(106)供应到真空室(110)中, 穿过方向(136),b)将层物理气相沉积到所述衬底(106)的表面(126)的部分区域(130)上,并且同时激光结晶所述衬底(106)的至少一个子部分区域(132) c)通过至少一个激光束(124)在衬底(106)的表面(126)上的当前涂覆的部分区域(130),同时在所述馈通方向(136)上连续或不连续地移动所述衬底(106) 在所述穿通方向(136)中从所述真空室(110)排出所述涂覆的基板(106)。 本发明还涉及一种用于制造硅串联太阳能电池的方法,所述方法包括至少一个基于非晶硅的太阳能电池和至少一个基于晶体硅的太阳能电池,所述至少一个太阳能电池单独地布置在另一个之上,包括以下方法步骤:A )在透明基板上提供或生产基于非晶硅的太阳能电池,B)制造基于晶体硅的太阳能电池,其包括以下方法子步骤:aa)提供或沉积p掺杂的或在另一个实施方案中,n 掺杂的任选的非晶或晶体硅层,bb)任选地沉积由本征晶体硅组成的种子层,cc)借助于物理蒸气过程沉积非晶硅层,dd)结晶借助于 借助于激光结晶过程的物理蒸气过程,ee)可选地重复方法子步骤cc)和dd) ,ff)可选地沉积或提供n掺杂硅层,或在替代实施例中,p掺杂的任选非晶或晶体硅层,gg)任选地结晶非掺杂p掺杂的,或在替代实施例中,n掺杂硅 层,通过激光结晶过程,hh)沉积导电接触。 最后,本发明涉及一种串联太阳能电池,其包括至少一个基于非晶硅的太阳能电池和至少一个基于晶体硅的太阳能电池,所述至少一个太阳能电池单独地布置在另一个之上,其中基于晶体硅的太阳能电池具有硅 其特征在于,所述硅层具有晶粒直径在20nm和5μm之间的微晶。