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11. 发明申请

US20160104671A1 SEMICONDUCTOR DEVICES INCLUDING BIT LINE CONTACT PLUG AND PERIPHERAL TRANSISTOR 审中-公开
公开(公告)号：US20160104671A1
公开(公告)日：2016-04-14
申请号：US14970160
申请日：2015-12-15
申请人： Sung-Il Cho , Nam-Gun Kim , Jin-Young Kim , Hyun-Chul Yoon , Bong-Soo Kim , Kwan-Sik Cho
发明人： Sung-Il Cho , Nam-Gun Kim , Jin-Young Kim , Hyun-Chul Yoon , Bong-Soo Kim , Kwan-Sik Cho
IPC分类号： H01L23/528 , H01L23/535 , H01L29/06 , H01L27/108 , H01L29/78
CPC分类号： H01L23/528 , H01L23/535 , H01L27/1052 , H01L27/10873 , H01L27/10876 , H01L27/10885 , H01L27/10888 , H01L27/10894 , H01L27/10897 , H01L29/0649 , H01L29/42324 , H01L29/45 , H01L29/78 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a cell area and a peripheral area includes a semiconductor substrate, a cell insulating isolation region delimiting a cell active region of the semiconductor substrate in the cell area, a word line disposed within the semiconductor substrate in the cell area, a bit line contact plug disposed on the cell active region, a bit line disposed on the bit line contact plug, a peripheral insulating isolation region delimiting a peripheral active region of the semiconductor substrate in the peripheral area, and a peripheral transistor including a peripheral transistor lower electrode and a peripheral transistor upper electrode. The bit line contact plug is formed at the same level in the semiconductor device as the peripheral transistor lower electrode, and the bit line electrode is formed at the same level in the semiconductor device as the peripheral transistor upper electrode.

12. 发明申请

US20150061134A1 SEMICONDUCTOR DEVICES INCLUDING AIR GAP SPACERS AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：包括空气间隙的半导体器件及其制造方法
公开(公告)号：US20150061134A1
公开(公告)日：2015-03-05
申请号：US14290620
申请日：2014-05-29
申请人： EUN-OK LEE , NAM-GUN KIM , GYUHWAN OH , HEESOOK PARK , HYUN-JUNG LEE , KYUNGHO JANG
发明人： EUN-OK LEE , NAM-GUN KIM , GYUHWAN OH , HEESOOK PARK , HYUN-JUNG LEE , KYUNGHO JANG
IPC分类号： H01L23/532
CPC分类号： H01L23/5329 , H01L21/764 , H01L21/7682 , H01L21/76831 , H01L21/76889 , H01L21/76895 , H01L21/76897 , H01L23/53209 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L27/10888 , H01L2924/0002 , H01L2924/00
摘要： A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.
摘要翻译：覆盖接触塞的侧壁的间隔件包括相对更受损的第一部分和相对较少受损的第二部分。间隔物的第一和第二部分的界面与接触塞的金属硅化物层间隔开。因此，可以提高半导体器件的可靠性。还描述了相关的制造方法。

13. 发明申请

US20140162461A1 METHODS FOR FORMING A SEMICONDUCTOR DEVICE INCLUDING FINE PATTERNS 有权
标题翻译：用于形成包括精细图案的半导体器件的方法
公开(公告)号：US20140162461A1
公开(公告)日：2014-06-12
申请号：US14098897
申请日：2013-12-06
申请人： Nam-Gun KIM , Kyungho JANG
发明人： Nam-Gun KIM , Kyungho JANG
IPC分类号： H01L21/308 , H01L21/311
CPC分类号： H01L21/31144 , H01L21/0337 , H01L27/10852 , H01L27/11556 , H01L27/11582 , H01L27/228 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/10 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Methods for forming a semiconductor device including fine patterns are provided. The method may include forming a mask layer including first holes spaced apart from each other in a first direction and a second direction. The method may also include forming local mask patterns on the mask layer and forming a sacrificial layer on the mask layer filling the first holes and surrounding the local mask patterns. The local mask patterns may be offset from the first holes in the first direction and the second direction. The method may further include removing the local mask patterns to form openings in the sacrificial layer exposing the mask layer and etching the mask layer through the opening to form second holes in the mask layer.
摘要翻译：提供了形成包括精细图案的半导体器件的方法。该方法可以包括形成包括在第一方向和第二方向上彼此间隔开的第一孔的掩模层。该方法还可以包括在掩模层上形成局部掩模图案，并在掩模层上形成填充第一孔并围绕局部掩模图案的牺牲层。局部掩模图案可以在第一方向和第二方向上偏离第一孔。该方法可以进一步包括去除局部掩模图案以在牺牲层中形成暴露掩模层的开口并且通过开口蚀刻掩模层以在掩模层中形成第二孔。

14. 发明申请

US20130217394A1 Multi-Mode Mobile Communication Terminal and Mode Switching Method Thereof 有权
标题翻译：多模移动通信终端及其模式切换方法
公开(公告)号：US20130217394A1
公开(公告)日：2013-08-22
申请号：US13852735
申请日：2013-03-28
申请人： Nam-Gun KIM , Young-Lak KIM , Hyun-Wook KIM , Chang-Moon HAN
发明人： Nam-Gun KIM , Young-Lak KIM , Hyun-Wook KIM , Chang-Moon HAN
IPC分类号： H04W36/18
CPC分类号： H04W36/18 , H04B7/195 , H04W36/14 , H04W36/30 , H04W36/36 , H04W88/06
摘要： Disclosed is a multi-mode multi-band mobile communication terminal and a mode switching method thereof wherein a mode switching can be performed between an asynchronous network and a synchronous network by minimizing interruption in communication. According to the switching method of a multi-mode multi-band mobile communication terminal, the power of a signal received from an asynchronous network or a synchronous network is measured and the measured power of the received signal drives a modem portion, thereby switching the mode of the mobile communication terminal.
摘要翻译：公开了一种多模式多频带移动通信终端及其模式切换方法，其中可以通过最小化通信中断来在异步网络和同步网络之间执行模式切换。根据多模式多频带移动通信终端的切换方法，测量从异步网络或同步网络接收的信号的功率，并且测量的接收信号的功率驱动调制解调器部分，从而切换模式的移动通信终端。

15. 发明申请

US20110183512A1 METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING CONTACT PLUG 有权
标题翻译：形成具有接触片的半导体器件的方法
公开(公告)号：US20110183512A1
公开(公告)日：2011-07-28
申请号：US12793843
申请日：2010-06-04
申请人： Sung-Il Cho , Nam-Gun Kim , Jong-Cheol Lee
发明人： Sung-Il Cho , Nam-Gun Kim , Jong-Cheol Lee
IPC分类号： H01L21/768
CPC分类号： H01L23/485 , H01L21/76831 , H01L21/76895 , H01L21/76897 , H01L23/5226 , H01L27/10814 , H01L27/10855 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device includes forming a lower conductive pattern on a substrate, forming an insulating layer over the lower conductive pattern, forming a contact hole through the insulating layer to expose the lower conductive pattern, forming a first spacer along sides of the contact hole, and then forming a contact plug in the contact hole. The contact plug is formed so as to contact the lower conductive pattern.
摘要翻译：形成半导体器件的方法包括在衬底上形成下导电图案，在下导电图案上形成绝缘层，形成通过绝缘层的接触孔，露出下导电图案，沿着第接触孔，然后在接触孔中形成接触塞。接触塞形成为接触下导电图案。

16. 发明授权

US07898564B2 Video telephony service method in mobile communication network 有权
标题翻译：移动通信网络中的视频电话服务方式
公开(公告)号：US07898564B2
公开(公告)日：2011-03-01
申请号：US11577656
申请日：2005-09-27
申请人： Nam-Gun Kim , Hyun-Wook Kim , Goon-don Choi , Chang-Moon Han
发明人： Nam-Gun Kim , Hyun-Wook Kim , Goon-don Choi , Chang-Moon Han
IPC分类号： H04N7/14
CPC分类号： H04N7/14 , H04L65/1009 , H04L65/1069 , H04L65/1089 , H04L69/24 , H04N7/147 , H04W76/12 , H04W92/18
摘要： The video telephony service method includes the step of the mobile communication system, which stores profile information, setting up a call between culling and called mobile communication terminals; the step of the mobile communication system transmitting the profile information of the calling mobile communication terminal to the called mobile communication terminal, as the calling mobile communication terminal transmits the profile information thereof to the mobile communication system; the step of the called mobile communication terminal consulting the profile information, and transmitting a response signal to the mobile communication system after establishing conditions for video telephony if it is determined that video telephony is possible for a received profile, and the mobile communication system transmitting the response signal to the calling mobile communication terminal; and the step of the mobile communication system establishing a communication path between the calling and called mobile communication terminals.
摘要翻译：视频电话服务方法包括存储简档信息的移动通信系统的步骤，在剔除和被叫移动通信终端之间建立呼叫; 移动通信系统将主叫移动通信终端的简档信息发送到被叫移动通信终端的步骤，作为主叫移动通信终端将其简档信息发送到移动通信系统; 所述被叫移动通信终端的步骤咨询简档信息，并且如果确定视频电话对于所接收的简档是可能的，则在为视频电话建立条件之后向移动通信系统发送响应信号，并且移动通信系统发送响应信号到呼叫移动通信终端; 以及移动通信系统在呼叫和被叫移动通信终端之间建立通信路径的步骤。

17. 发明授权

US07848754B2 Dual band/dual mode mobile communication terminal and control method thereof 有权
标题翻译：双频/双模移动通信终端及其控制方法
公开(公告)号：US07848754B2
公开(公告)日：2010-12-07
申请号：US11576271
申请日：2005-01-05
申请人： Hyun-Wook Kim , Young-Lak Kim , Nam-Gun Kim , Jong-Tae Ihm
发明人： Hyun-Wook Kim , Young-Lak Kim , Nam-Gun Kim , Jong-Tae Ihm
IPC分类号： H04W36/00 , H04W4/00 , H04M1/00
CPC分类号： H04B1/005 , H04B1/38
摘要： The present invention relates to a dual band/dual mode mobile communication terminal, which can perform stable roaming between synchronous and asynchronous mobile communication networks. The mobile communication terminal of the present invention includes an antenna (410), an asynchronous RF device (420), a synchronous RF device (430), and a common module (440). The antenna (410) transmits/receives radio waves to/from an asynchronous mobile communication network (100) and a synchronous mobile communication network (200). The asynchronous RF device (420) performs asynchronous communication with the asynchronous mobile communication network (100) through the antenna (410). The synchronous RF device (430) performs synchronous communication with the synchronous mobile communication network (200) through the antenna (410). The common module (440) provides common resources at the time of wirelessly communicating with the synchronous and asynchronous mobile communication networks through the synchronous and asynchronous RF devices.
摘要翻译：双频/双模移动通信终端技术领域本发明涉及一种能够在同步和异步移动通信网络之间进行稳定漫游的双频/双模移动通信终端。本发明的移动通信终端包括天线（410），异步RF设备（420），同步RF设备（430）和公共模块（440）。天线（410）向/从异步移动通信网络（100）和同步移动通信网络（200）发送/接收无线电波。异步RF设备（420）通过天线（410）与异步移动通信网络（100）执行异步通信。同步RF设备（430）通过天线（410）与同步移动通信网络（200）进行同步通信。公共模块（440）在通过同步和异步RF设备与同步和异步移动通信网络进行无线通信时提供公共资源。

18. 发明申请

US20080161039A1 Dual Band/Dual Mode Mobile Communication Terminal and Control Method Thereof 有权
标题翻译：双频/双模移动通信终端及其控制方法
公开(公告)号：US20080161039A1
公开(公告)日：2008-07-03
申请号：US11576271
申请日：2005-01-05
申请人： Hyun-Wook Kim , Young-Lak Kim , Nam-Gun Kim , Jong-Tae Ihm
发明人： Hyun-Wook Kim , Young-Lak Kim , Nam-Gun Kim , Jong-Tae Ihm
IPC分类号： H04B1/40
CPC分类号： H04B1/005 , H04B1/38
摘要： The present invention relates to a dual band/dual mode mobile communication terminal, which can perform stable roaming between synchronous and asynchronous mobile communication networks. The mobile communication terminal of the present invention includes an antenna (410), an asynchronous RF device (420), a synchronous RF device (430), and a common module (440). The antenna (410) transmits/receives radio waves to/from an asynchronous mobile communication network (100) and a synchronous mobile communication network (200). The asynchronous RF device (420) performs asynchronous communication with the asynchronous mobile communication network (100) through the antenna (410). The synchronous RF device (430) performs synchronous communication with the synchronous mobile communication network (200) through the antenna (410). The common module (440) provides common resources at the time of wirelessly communicating with the synchronous and asynchronous mobile communication networks through the synchronous and asynchronous RF devices.
摘要翻译：双频/双模移动通信终端技术领域本发明涉及一种能够在同步和异步移动通信网络之间进行稳定漫游的双频/双模移动通信终端。本发明的移动通信终端包括天线（410），异步RF设备（420），同步RF设备（430）和公共模块（440）。天线（410）向/从异步移动通信网络（100）和同步移动通信网络（200）发送/接收无线电波。异步RF设备（420）通过天线（410）与异步移动通信网络（100）执行异步通信。同步RF设备（430）通过天线（410）与同步移动通信网络（200）进行同步通信。公共模块（440）在通过同步和异步RF设备与同步和异步移动通信网络进行无线通信时提供公共资源。

19. 发明申请

US20070280160A1 Multi-Mode Multi-Band Mobile Communication Terminal And Mode Switching Method Thereof 有权
标题翻译：多模多频移动通信终端及其切换方式
公开(公告)号：US20070280160A1
公开(公告)日：2007-12-06
申请号：US10591822
申请日：2005-03-04
申请人： Nam-Gun Kim , Young-Lak Kim , Hyun-Wook Kim , Chan-Moon Han
发明人： Nam-Gun Kim , Young-Lak Kim , Hyun-Wook Kim , Chan-Moon Han
IPC分类号： H04Q7/00
CPC分类号： H04W36/18 , H04B7/195 , H04W36/14 , H04W36/30 , H04W36/36 , H04W88/06
摘要： Disclosed is a multi-mode multi-band mobile communication terminal and a mode switching method thereof wherein a mode switching can be performed between an asynchronous network and a synchronous network by minimizing interruption in communication. According to the switching method of a multi-mode multi-band mobile communication terminal, the power of a signal received from an asynchronous network or a synchronous network is measured and the measured power of the received signal drives a modem portion, thereby switching the mode of the mobile communication terminal.
摘要翻译：公开了一种多模式多频带移动通信终端及其模式切换方法，其中可以通过最小化通信中断来在异步网络和同步网络之间执行模式切换。根据多模式多频带移动通信终端的切换方法，测量从异步网络或同步网络接收的信号的功率，并且测量的接收信号的功率驱动调制解调器部分，从而切换模式的移动通信终端。

20. 发明申请

US20160064270A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING AIR GAP SPACERS 审中-公开
标题翻译：制造包括空气间隙的半导体器件的方法
公开(公告)号：US20160064270A1
公开(公告)日：2016-03-03
申请号：US14939439
申请日：2015-11-12
申请人： EUN-OK LEE , Nam-Gun KIM , Gyuhwan OH , Heesook PARK , Hyun-Jung LEE , Kyungho JANG
发明人： EUN-OK LEE , Nam-Gun KIM , Gyuhwan OH , Heesook PARK , Hyun-Jung LEE , Kyungho JANG
IPC分类号： H01L21/768
CPC分类号： H01L23/5329 , H01L21/764 , H01L21/7682 , H01L21/76831 , H01L21/76889 , H01L21/76895 , H01L21/76897 , H01L23/53209 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L27/10888 , H01L2924/0002 , H01L2924/00
摘要： A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal suicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.
摘要翻译：覆盖接触塞的侧壁的间隔件包括相对更受损的第一部分和相对较少受损的第二部分。间隔物的第一和第二部分的界面与接触塞的金属硅化物层间隔开。因此，可以提高半导体器件的可靠性。还描述了相关的制造方法。

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